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Stress test system and test method for semiconductor laser chip

A technology of stress testing and lasers, which is applied in the direction of measurement, instrumentation, and force measurement by measuring the change in optical properties of materials when they are stressed, and can solve the problems of inability to accurately obtain the stress of semiconductor laser chips.

Active Publication Date: 2021-03-30
SUZHOU EVERBRIGHT PHOTONICS CO LTD +1
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  • Abstract
  • Description
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Problems solved by technology

[0006] Therefore, the technical problem to be solved by the present invention is to overcome the defect that the existing wafer stress test method cannot accurately obtain the stress size of any position in the cavity surface of the semiconductor laser chip, thereby providing a stress test system and testing method

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  • Stress test system and test method for semiconductor laser chip
  • Stress test system and test method for semiconductor laser chip
  • Stress test system and test method for semiconductor laser chip

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Embodiment Construction

[0038] The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0039] In the description of the present invention, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance. It should be noted that, unless otherwise clearly stipulated and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; It can be a mechanical connection or an electr...

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Abstract

The invention discloses a stress test system and test method for a semiconductor laser chip. The stress test system comprises a detection laser; a temperature controller, used for adjusting the wavelength of the detection laser output by the incident laser by adjusting the working environment temperature of the detection laser; a beam splitting unit, used for splitting the detection laser into transmission light and reflection light, and the transmission light being suitable for forming a light spot on the front cavity surface of the semiconductor laser chip to be detected so as to generate light current in the semiconductor laser chip to be detected; a spectrograph, suitable for receiving the reflected light and acquiring the wavelength of the reflected light; a current detection unit; and a data processing module comprising a forbidden band width acquisition unit and a stress acquisition unit. The stress testing system of the semiconductor laser chip can accurately obtain the stressof any position in the cavity surface of the semiconductor laser chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a stress testing system and testing method for semiconductor laser chips. Background technique [0002] With the rapid development of related technologies of semiconductor laser chips, the output power of semiconductor laser chips is increasing. Semiconductor laser chips have attracted widespread attention in various fields due to their advantages such as large output power, small size, light weight, high electro-optical conversion efficiency, wide wavelength range, high reliability and long life. Semiconductor laser chips can be widely used in communication, computer, manufacturing, aerospace, aviation, medical, display and printing industries. [0003] However, it is easy to introduce stress during the preparation and packaging of semiconductor laser chips, such as the stress of the chip epitaxial layer introduced during design, the additional stress introduced by...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/24
CPCG01L1/242
Inventor 周立王俊谭少阳陈绍兴俞浩虞天成
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD
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