Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

59 results about "Aluminium electrode" patented technology

Electrochemical reactor for simultaneously removing arsenic and fluorine pollutant in water and method

The invention relates to an electrochemical reactor and a method which can remove arsenic and fluorin pollutants in water at the same time. Ferrum and aluminium electrodes are coupled, ferrum and aluminium ions are generated by electric induction and trivalent arsenic is converted into pentavalent arsenic by electrooxidation at the same time. Ferrum and aluminium ions generated through electrolysis further form ferrum and aluminium flocs, which respectively react with arsenic and fluorin pollutants in water to remove arsenic and fluorin pollutants in water at the same time. The bottom of an electric coagulation reactor of the invention is provided with a water distribution plate, the upper part of which is provided with dimensionally stable electrodes, ferrum plate electrodes and aluminium plate electrodes that are fixed to an insulating bar through an insulation spacer and nuts; the dimensionally stable electrodes, the ferrum plate electrodes and the aluminium plate electrodes alternate at intervals as an anode and a cathode, or as a cathode and an anode, and are arranged in the reactor in a parallel manner; wherein, the adjacent dimensionally stable electrodes are respectively connected with the anode and the cathode of a direct current power source and timed anode and cathode switch is carried out so as to improve the reaction efficiency of the electrode and inhibit passivation of the electrode. The method can be applied to remove arsenic and fluorin pollutants in drinking water respectively or at the same time.
Owner:RES CENT FOR ECO ENVIRONMENTAL SCI THE CHINESE ACAD OF SCI

Piezoelectric ceramic element of metal aluminium electrode and preparation method thereof

The invention discloses a piezoelectric ceramic element of a metal aluminum electrode and a preparation method thereof. The piezoelectric ceramic element of the metal aluminum electrode comprises PZT ceramic and a metal electrode sintered on the upper and lower surfaces of the PZT ceramic; the metal electrode at least has an aluminum electrode surface which is sintered on the PZT ceramic by using aluminum electrode slurry. Based on mass percentage, the prescription of raw materials of the aluminum electrode comprises 55-60% of metal aluminum powder, 12-15% of unleaded glass powder with low melting point, 14-18% of ethylcellulose bond, 1.0% of antioxidant assistant and the balance of organic solvent. The preparation method comprises the steps of preparing the aluminum electrode slurry, printing, sintering the aluminum electrode slurry on the surfaces of the PZT ceramic and polarizing the electric field. In the invention, the bonding strength between the aluminum electrode surface and the PZT piezo ceramic is improved through adjusting chemical components and the proportion of the organic bond in the aluminum electrode slurry, and by replacing the silver electrode with the aluminum electrode, the manufacturing cost of the piezoelectric ceramic element can be reduced greatly.
Owner:SOUTH CHINA UNIV OF TECH +1

Preparation method of back junction N type solar battery, back junction N type solar battery, back junction N type solar battery assembly and back junction N type solar battery system

The invention discloses a preparation method of a back junction N type solar battery, a back junction N type solar battery, a back junction N type solar battery assembly and a back junction N type solar battery system. According to the preparation method of the back junction N type solar battery, an N type crystalline silicon substrate is processed; a slotted structure penetrating a passivation film is formed on the back surface of the N type crystalline silicon substrate; aluminium paste is printed on the back surface of the N type crystalline silicon substrate, thus forming a back aluminium electrode; silver paste is printed on the back surface of the N type crystalline silicon substrate, thus forming a back silver master gate electrode; the silver paste is printed on the front surface of the N type crystalline silicon substrate, thus forming a front electrode; and sintering is carried out, thus forming the back junction N type solar battery. The method, the battery, the assembly and the system provided by the invention has the advantages that the passivation film on the back surface is slotted; the aluminium paste is printed; the aluminium paste forms partial contact with the p+ doped layer on the back surface, only at the location of the slotted pattern; compared with the method of printing the electrode by aluminium doped silver paste, the method provided by the invention has the advantages of improving the open-circuit voltage of the battery, greatly reducing silver paste consumption of the battery sheet and reducing the preparation cost of the battery sheet.
Owner:TAIZHOU ZHONGLAI PHOTOELECTRIC TECH CO LTD

Junction for copper terminal and aluminium conductor and ultrasonic welding method thereof

The invention belongs to the field of a wiring hardness and specifically relates to a junction for a copper terminal and an aluminium conductor and an ultrasonic welding method thereof. In order to solve the problem that in the prior art, the electrochemical corrosion exists in the welding between the copper terminal and the aluminium conductor and the mechanical property of a welding junction is low, according to the junction and the method, a spacing metal layer is added between the copper terminal and the aluminium conductor. The spacing metal layer is fixed at a welding end of a base material in modes such as electroplating, pressure welding, electric arc spray welding or electromagnetic welding, and then the three parts: the spacing metal layer, the copper terminal and the aluminium conductor are welded together. The ultrasonic welding method provided by the invention is applicable to the welding of the copper terminal and the aluminium conductor and also applicable to the welding of various junctions. The electrochemical corrosion resulting from the potential difference of copper and an aluminium electrode can be effectively reduced. The mechanical property of the junction is improved.
Owner:CHANGCHUN JETTY AUTOMOTIVE PARTS CORP

Magnetic drive micro-inertial sensor for increasing detection capacitance and preparation method

The invention discloses a magnetic drive micro-inertial sensor for increasing the detection capacitance and its preparation method. The mass increase of the sensor oscillator and the decrease of the pole plate distance are limited in the prior art. In the invention, the mass block of the sensor is the rectangle silicon chip with the grid-like strips, both ends are connected with the anchor point by the silicon support girder, both sides are respectively provided with silicon trips, a ring groove is arranged in the middle of the driver mass block, a detecting silicon strip is arranged at one side of the driver mass block corresponding to the sensor block, a driver welding point is arranged at the anchor position at the outer side of the driver mass block near the U-shaped girder, the driver welding point is connected with the driver anchor point, an external current driven welding points are arranged at two anchor points relative to the driver, a metal driven lead is arranged among the external current driven welding points. An interdigital aluminium electrode is arranged on the glass substrate surface, each grid-like strip of the sensor mass block is corresponding to each pair of fork finger in the interdigital aluminium electrode. The invention has simple technology, is beneficial for reducing the cost and the improving the yield rate.
Owner:HAIAN COUNTY SHENLING ELECTRICAL APPLIANCE MFG

Aluminium paste for laser pore-forming partial back contact-passivating emitter crystalline silicon solar cell and preparation method and application thereof

The invention discloses an aluminium paste for a laser pore-forming partial back contact-passivating emitter crystalline silicon solar cell and a preparation method and an application thereof. The aluminium paste comprises the following components in percentage by weight: 50.00-75.00% of micro-size aluminium powder, 0.50-2.00% of glass powder, 15.00-30.00% of organic intermediate, 0.02-1.00% of inorganic additive and 1.00-2.50% of organic additive, and the sum of the components of the aluminium paste is 100% in percentage by weight. The required aluminium paste is prepared by steps of dosing, dual-planetary stirring, three-roller machine grinding, screening and filtering. When the aluminium paste is applied, the aluminium paste is printed on a monocrystalline wafer by a 325-mesh silk screen, and then the monocrystalline wafer is dried and sintered. An aluminium back field is formed in the pore-forming place in the back surface of the battery piece by the aluminium paste; the aluminium paste is relatively strong in adhesion with the passivating layer in the non-pore-forming places; and in addition, pill of aluminium or aluminium protruding parts are not formed on the surface of an aluminium film, so that the formed aluminium electrode is excellent in the electrical performance.
Owner:DK ELECTRONICS MATERIALS INC

Zinc oxide resistor aluminium spraying device and aluminium spray process thereof

InactiveCN102568726ALow costImprove spraying work efficiencyResistor manufactureRubber ringAluminium electrode
The invention discloses a zinc oxide resistor aluminium spraying device, and the aluminium spray process thereof. An aluminium electrode spraying device includes a spray gun, a conveyor belt, a blowing table and an exhaust gas collection pipe; the conveyor belt is used for conveying a zinc oxide resistor to the blowing table under the spray gun, and after a sensor in the blowing tables senses the resistor, a spray switch of the spray gun and a gas valve of the blowing table under the spray gun are opened at the same time, and aluminium electrode spraying is started; the spray gun and the blowing table are closed at the same time after the blowing and spraying time is reached; and then the conveyer belt is used for conveying the next resistor to the blowing table under the spray gun for next resistor spraying. Through adopting the aluminium electrode spraying process for the resistors, the spraying work efficiency is high, only 2 workers are required for operation, and the operation is simple. The zinc oxide resistors are not needed to be sleeved with rubber rings, the labor force is reduced, and the cost for purchasing the rubber rings is eliminated, so that the cost is lowered. At the same time, the aluminium electrode covering range on an end surface of each resistor is enlarged to improve the product through-current capability.
Owner:NANYANG JINNIU ELECTRIC +1

Method for preparing flexible Cu-In-Ga-Se thin film solar cell

The invention discloses a method for preparing a flexible Cu-In-Ga-Se (CIGS) thin film solar cell. The method is characterized by comprising the following steps: step 1, preparing a CIGS light absorption layer on a soda glass substrate by adoption of a high-temperature coevaporation process; step 2, pasting a temporary supporting layer; step 3, removing the soda glass substrate; step 4, bonding a flexible substrate; step 5, removing the temporary supporting layer, wherein the step 5 particularly comprises the following steps: firstly, adopting limonene to dissolve paraffin on the surface of the CIGS light absorption layer, removing the temporary supporting substrate and paraffin, cleaning with deionized water and blow-drying with nitrogen; after that, preparing a CdS buffer layer with the deposition thickness of 50-80 nm by adoption of a chemical water bath method; adopting a magnetron sputtering process on the buffer layer to obtain an intrinsic zinc oxide thin film with the deposition thickness of 50 nm and an ITO thin film with the deposition thickness of 300-800 nm, and preparing a 3 [mu]m aluminium electrode on the ITO thin film by adoption of an electron beam evaporation process to finish preparation of a cell device.
Owner:CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST

Joint of copper terminal and aluminium conductor and resistance welding method thereof

The invention belongs to the field of a wire harness, and particularly relates to a resistance welding structure and method between a copper terminal and an aluminium conductor. In order to solve the problems of electrochemical corrosion of welding between the copper terminal and the aluminium conductor and poor mechanical property of a welding joint in the prior art, according to the resistance welding structure and method disclosed by the invention, a separation metal layer is added between the copper terminal and the aluminium conductor; firstly, the separation metal layer is fixed at a welding end of one base metal in a mode of electroplating, pressure welding, arc spray welding or electromagnetic welding and the like; and then the separation metal layer, the copper terminal and the aluminium conductor are welded together. The resistance welding method disclosed by the invention not only is suitable for welding the copper terminal and the aluminium conductor, but also is suitable for welding of various types of joints, electrochemical corrosion caused by a potential difference of copper and aluminium electrodes can be effectively reduced, and the mechanical property of the joint is improved.
Owner:JILIN ZHONG YING HIGH TECH CO LTD

Method for processing stibium containing industrial wastewater by aluminium electrode-electric flocculence

The invention discloses a method for processing stibium containing industrial wastewater by aluminium electrode-electric flocculence, and relates to wastewater or sewage treatment. The method comprises the following steps: adopting an aluminium material as electrodes, electrolyzing the containing industrial wastewater of which the pH value is adjusted in advance by direct current in an electrolytic cell, and flocculating stibium ions in the wastewater by floc generated by the electrodes; and then standing, and discharging the wastewater after the wastewater passes detection. The method for processing the stibium containing industrial wastewater by the aluminium electrode-electric flocculence can solve the problem of severe superstandard of the stibium ions in the stibium containing industrial wastewater, remove the stibium in the stibium containing industrial wastewater by over 90 percent to make the concentration of the stibium ions in the treated water less than 3mg / L, realize qualified discharge and improve environmental quality. The method has the advantages of low cost, simple devices and easy operation, and is suitable for antimony ore concentration plants and metallurgical and chemical engineering enterprises related with the stibium.
Owner:INST OF GEOCHEM CHINESE ACADEMY OF SCI

Electromagnetic coupling inclined plate electric flocculation reactor

The invention provides an electromagnetic coupling inclined plate electric flocculation reactor. A casing of the reactor is made by adopting PPR or PVDF and other corrosion-resistant and high-temperature-resistant materials; the interior of the reactor is divided into an electromagnetic zone and an inclined plate electric flocculation zone which are mutually insulated, wherein the electromagnetic zone comprises a plurality of groups of electromagnets, the inclined plate electric flocculation zone comprises a set of inclined plate zigzag electrodes, and iron electrode or aluminium electrodes are adopted as the electrodes. The plurality of groups of electromagnets and the electrodes are connected in series; when direct current passes, the electromagnets generate a magnetic field with certain intensity, the electrodes generate ferrous or aluminous hydroxide flocculating agents under the action of the current, a certain amount of the magnetic powder is added into the reactor and is mixed with the ferrous or aluminous hydroxide flocculating agents to form magnetic floccule, and the magnetic floccule under the action of electromagnetic force and the inclined plate electrodes settle rapidly in a frustum-shaped sludge-collecting hopper at the bottom of the reactor. Compared with a traditional electric flocculation device, the reactor has the advantages of small size, short flocculation time, large treatment amount, and the like.
Owner:CNOOC TIANJIN CHEM RES & DESIGN INST +1

Heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell and preparation method

The invention discloses a heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell, which comprises a plurality of cells; and each cell is provided with an aluminium electrode layer, a first silicon nitride layer, a first silicon dioxide layer, a heavily-doped UMG silicon layer, a lightly-doped silicon epitaxy layer, a second silicon dioxide layer, a second silicon nitride layer and a plurality of heavily-doped areas from bottom to top in turn, wherein the conduction type of the lightly-doped silicon epitaxy layer is the same as that of the heavily-doped UMG silicon layer; the conduction type of the heavily-doped areas is opposite to that of the heavily-doped UMG silicon layer; and the upper surfaces of the heavily-doped areas and the upper surface of the second silicon nitride layer are provided with silver electrodes. The invention also provides a preparation method for the solar cell. A low-cost UMG silicon material is utilized, heavily-doped UMG silicon crystals are grown by the heavy doping technology, and the heavily-doped UMG silicon crystals are epitaxially grown to form a high-quality silicon film so as to prepare the solar cell, so the cost of the solar cell is much lower than that of a solar cell prepared from a high-quality silicon material directly, and the photoelectric conversion efficiency is much higher than that of a solar cell prepared from a lightly-doped UMG silicon material directly.
Owner:ZHEJIANG UNIV

Relative humidity sensor of monolithic integrated porous silicon and preparation method of humidity sensor

The invention aims at solving the defect of the structure of an existing humidity sensor and provides a relative humidity sensor of monolithic integrated porous silicon and a preparation method of the humidity sensor. The humidity sensor comprises a substrate, wherein a pair of comb-shaped and staggered aluminium electrodes are arranged on the substrate; the bottom surfaces and the side walls of the aluminium electrodes are uniformly coated with oxidation isolation layers; passivation layers covers the tops of the aluminium electrodes; the top surface of the substrate at areas among combs of the aluminium electrodes is coated with a porous silicon layer; the top surface of the porous silicon layer is coated with an oxide layer; a polycrystalline silicon heating layer is arranged at the top of the oxide layer. The preparation method of the humidity sensor comprises the following eight steps: scribing, preparing an electrode tank, preparing the oxidation isolation layers, preparing the aluminium electrodes, preparing the porous silicon layer, preparing the oxide layer, preparing the passivation layers and preparing the polycrystalline silicon heating layer. The relative humidity sensor has the beneficial effects of being compact in structure and high in sensitivity; the method is compatible with an MEMS (Micro-electromechanical Systems) process; extra devices or severe working conditions are not required to be added; the method is high in yield of finished products.
Owner:HEFEI UNIV OF TECH

Method for manufacturing zinc oxide nonlinear resistance slice used for lightning arrester

The invention discloses a method for preparing a praseodymium series zinc oxide curve resistance, comprising the following procedures: additives are added according to the mol percentage: Co2O3is from 0.9 to 1.1 percent; Cr2O3 is from 0.4 to 0.6 percent; Pr6O11 is from 0.5 to 1.0mol percent; K2CO3 is from 0.5 to 1.0mol percent; Al(NO3)3.9H2O is from 0.025 to 0.032 percent; the remainder is the main ingredient of zinc oxide which is matched with ingredients and calculated and weighted, the additives are mixed to be calcined and then mixed with the zinc oxide to be comminuted by the wet method; the whole is kept at the temperature of 1200 to 1250 degrees for three to four hours to calcine a ceramic water after spray pelleting and moulding as well as binder removal, the ceramic water is cleaned and dried after polished dressing; finally, the two end surfaces of the ceramic water are sprayed with aluminium electrodes, the circle surface of the ceramic water is applied with an insulating barrier, and a resistance card is manufactured. The invention has a small variety of additives, is capable of increasing the effective area of grain boundary layer and increasing the discharge current capability, which contributes to improving the potential gradient of products and decreasing the leakage current; in addition, the addition of Al(NO3)3.9H2O introduces an aluminium ion and zinc ion to form a substitution type flaw, increases the thickness of conductive ions, decreases grain of zinc oxide, and obviously improves the residual voltage ratio of the praseodymium series zinc oxide curve resistance.
Owner:CHINA XD ELECTRIC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products