Preparation method of back junction N type solar battery, back junction N type solar battery, back junction N type solar battery assembly and back junction N type solar battery system

Abstract

The invention discloses a preparation method of a back junction N type solar battery, a back junction N type solar battery, a back junction N type solar battery assembly and a back junction N type solar battery system. According to the preparation method of the back junction N type solar battery, an N type crystalline silicon substrate is processed; a slotted structure penetrating a passivation film is formed on the back surface of the N type crystalline silicon substrate; aluminium paste is printed on the back surface of the N type crystalline silicon substrate, thus forming a back aluminium electrode; silver paste is printed on the back surface of the N type crystalline silicon substrate, thus forming a back silver master gate electrode; the silver paste is printed on the front surface of the N type crystalline silicon substrate, thus forming a front electrode; and sintering is carried out, thus forming the back junction N type solar battery. The method, the battery, the assembly and the system provided by the invention has the advantages that the passivation film on the back surface is slotted; the aluminium paste is printed; the aluminium paste forms partial contact with the p+ doped layer on the back surface, only at the location of the slotted pattern; compared with the method of printing the electrode by aluminium doped silver paste, the method provided by the invention has the advantages of improving the open-circuit voltage of the battery, greatly reducing silver paste consumption of the battery sheet and reducing the preparation cost of the battery sheet.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a preparation method of a back-junction N-type solar cell and the cell, component and system thereof. Background technique [0002] A solar cell is a semiconductor device that converts solar energy into electricity. At present, the mainstream products in the industry are P-type crystalline silicon cells. The battery process is simple, but it has a light-induced decay effect, that is, the efficiency of the battery will gradually decay with time, which is mainly due to the combination of boron atoms doped into the P-type silicon substrate and oxygen atoms in the substrate. Produces boron-oxygen pair results. Studies have shown that the boron-oxygen pair acts as a carrier trap, reducing the minority carrier lifetime, which leads to the attenuation of the photoelectric conversion efficiency of the battery. Compared with P-type crystalline silicon cells, N-type solar cells have the advan...

AI Technical Summary

Problems solved by technology

The p+ doped layer generally uses aluminum-doped silver paste to make electrodes, but the price of aluminum-doped silver paste is relatively expensive, which leads to a high proportion of silver-containing paste in battery manufacturing costs

In addition, although the aluminum-doped silver paste can form a good ohmic contact with the p+ doped layer, the metal recombination under it is very serious, which will lose a large part of the open circuit voltage

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