Relative humidity sensor of monolithic integrated porous silicon and preparation method of humidity sensor
A relative humidity, monolithic integration technology, applied in the direction of material capacitance, etc., can solve the problems of humidity sensor not specially designed dehumidification circuit, limited product application scope and market acceptance, complicated equipment structure, etc., to eliminate external interference, price, etc. Low cost, the effect of reducing the desorption time
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[0040] The structural features and method steps of the present invention will now be described in detail in conjunction with the accompanying drawings.
[0041] see figure 1 , a relative humidity sensor monolithically integrated porous silicon, comprising a substrate 1, the substrate 1 is a rectangular block. A pair of aluminum electrodes 6 are arranged on the top surface of the substrate 1, see figure 2 . The aluminum electrode 6 is comb-shaped, see image 3 . On the bottom surface of the aluminum electrode 6 and the side wall of the aluminum electrode 6, a layer of oxide isolation layer 5 is arranged, see figure 2 and image 3 . The top of the aluminum electrode 6 is provided with a passivation layer 4, see figure 2 . The comb teeth of the two aluminum electrodes 6 are interlaced, and the preferred solution is to arrange the comb teeth of the two aluminum electrodes 6 in an interdigitated equidistant manner. For details, see ima...
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