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Method for preparing flexible Cu-In-Ga-Se thin film solar cell

A thin film solar cell, copper indium gallium selenide technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of battery performance degradation, affecting the crystalline quality and optoelectronic properties of the CIGS light absorption layer, etc. Crystal quality and optoelectronic properties, cost reduction effect

Active Publication Date: 2017-05-31
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, because the growth temperature affects the crystalline quality and photoelectric properties of the CIGS light-absorbing layer, resulting in a decline in battery performance

Method used

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  • Method for preparing flexible Cu-In-Ga-Se thin film solar cell
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  • Method for preparing flexible Cu-In-Ga-Se thin film solar cell

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preparation example Construction

[0038] A method for preparing a flexible copper indium gallium selenide thin film solar cell, comprising:

[0039]Step 1: Using a soda line glass substrate (soda line glass) with a thickness of about 1.5mm-2mm, first deposit a Mo film with a thickness of 0.5μm-1μm by magnetron sputtering process as the positive electrode of the battery, and then prepare it by co-evaporation three-step method For CIGS light absorbing layer, the deposition temperature is about 530°C-570°C. During this process, the Na atoms in the glass substrate diffuse into the CIGS absorbing layer to form a soda-lime glass substrate 1, which has a significant effect on improving its electrical properties (as confirmed by previous literature), and solves the problem of flexible substrates. It does not contain alkali metal elements and requires an additional doping process.

[0040] Step 2: Coat a layer of paraffin wax on the surface of the CIGS light absorbing layer, and cover the edges and sides of the absorb...

Embodiment 1

[0045] Embodiment 1, see attached figure 1

[0046] The method for preparing a CIGS light-absorbing layer solar cell on a flexible plastic substrate described in this patent, the process is as follows:

[0047] 1) The glass substrate 1 is cleaned. A soda line glass substrate (soda line glass) with a thickness of about 1.5 mm to 2 mm was soaked in acetone and cleaned ultrasonically for 40 min. After rinsing with deionized water, immerse in ethanol for ultrasonic cleaning for 20 minutes, and then rinse repeatedly with deionized water.

[0048] 2) Prepare the positive electrode 2 of the battery. A Mo film with a thickness of 0.5 μm to 1 μm is deposited on a glass substrate by using a DC magnetron sputtering process as the positive electrode of the battery, that is, the Mo electrode layer 2 . The sputtering process uses a background vacuum of 1×10 -3 Pa, by adjusting the flow rate of Ar gas, two layers of Mo films are deposited successively under the conditions of pressure of...

Embodiment 2

[0054] Embodiment 2, see attached figure 1

[0055] The method for preparing a CIGS light-absorbing layer solar cell on a flexible metal substrate described in this patent, the process is as follows:

[0056] 1) The glass substrate 1 is cleaned. A soda line glass substrate (soda line glass) with a thickness of about 1.5 mm to 2 mm was soaked in acetone and cleaned ultrasonically for 40 min. After rinsing with deionized water, immerse in ethanol for ultrasonic cleaning for 20 minutes, and then rinse repeatedly with deionized water.

[0057] 2) Prepare battery positive electrode-2. A Mo film with a thickness of 0.5 μm to 1 μm is deposited on a glass substrate by a DC magnetron sputtering process as the positive electrode of the battery. The sputtering process uses a background vacuum of 1×10 -3 Pa, by adjusting the flow rate of Ar gas, two layers of Mo films are deposited successively under the conditions of pressure of 1-5Pa and pressure of 0.01-0.5Pa, and the ratio of the...

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Abstract

The invention discloses a method for preparing a flexible Cu-In-Ga-Se (CIGS) thin film solar cell. The method is characterized by comprising the following steps: step 1, preparing a CIGS light absorption layer on a soda glass substrate by adoption of a high-temperature coevaporation process; step 2, pasting a temporary supporting layer; step 3, removing the soda glass substrate; step 4, bonding a flexible substrate; step 5, removing the temporary supporting layer, wherein the step 5 particularly comprises the following steps: firstly, adopting limonene to dissolve paraffin on the surface of the CIGS light absorption layer, removing the temporary supporting substrate and paraffin, cleaning with deionized water and blow-drying with nitrogen; after that, preparing a CdS buffer layer with the deposition thickness of 50-80 nm by adoption of a chemical water bath method; adopting a magnetron sputtering process on the buffer layer to obtain an intrinsic zinc oxide thin film with the deposition thickness of 50 nm and an ITO thin film with the deposition thickness of 300-800 nm, and preparing a 3 [mu]m aluminium electrode on the ITO thin film by adoption of an electron beam evaporation process to finish preparation of a cell device.

Description

technical field [0001] The invention relates to the technical field of copper indium gallium selenide thin film solar cells, in particular to a method for preparing a flexible copper indium gallium selenide thin film solar cell. Background technique [0002] Flexible substrate copper indium gallium selenide (Cu(In,Ga)Se 2 , referred to as CIGS) thin-film solar cells have the advantages of high mass specific power, strong radiation resistance, and good stability, and the cell components are suitable for roll-to-roll preparation, which has great potential in mass production and cost reduction, and has a wider range of applications ( compared to rigid substrates). However, flexible substrates also have certain limitations and unfavorable factors for the preparation of high-efficiency CIGS light-absorbing layer cells. Foreign studies have shown that at a higher substrate temperature (generally above 530°C), it is easy to prepare a CIGS light-absorbing layer with good crystal q...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032
CPCH01L31/0322H01L31/18Y02E10/541Y02P70/50
Inventor 王赫姚立勇杨亦桐张超杨立邓超文
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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