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Aluminium paste for laser pore-forming partial back contact-passivating emitter crystalline silicon solar cell and preparation method and application thereof

A technology for passivating emitters and solar cells, which is used in photovoltaic power generation, cable/conductor manufacturing, conductive materials dispersed in non-conductive inorganic materials, etc. It can solve problems such as reducing the surface recombination rate of carriers and reducing surface activity. , to achieve the effect of strong adhesion and excellent electrical properties

Inactive Publication Date: 2016-03-16
DK ELECTRONICS MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The increase of defect states on the surface of crystalline silicon leads to the recombination of photogenerated carriers in solar cells. Surface passivation technology reduces the surface activity by saturating the dangling bonds on the surface of crystalline silicon, thereby reducing the surface recombination rate of minority carriers.

Method used

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preparation example Construction

[0029] A method for preparing aluminum paste for laser opening local back contact-passivated emitter crystalline silicon solar cells. Dissolve in a reaction kettle for 2h-3h to obtain an organic intermediate with uniform and transparent components; 2) Accurately weigh the raw materials of the glass powder, and dry each component at 110°C-120°C for 2h-3h, and mix evenly Then put it into a corundum crucible, melt it in a high temperature furnace at a high temperature of 1000°C-1200°C for 0.5h-1.5h, then quench the molten material in electronic grade pure water to obtain glass slag, and ball mill the glass slag to a particle size of 2μm- 5μm glass powder, and finally dried to obtain the required lead-free glass powder; 3) Add the formula amount of organic intermediates, organic additives, inorganic additives and glass powder in the slurry tank for preliminary pre-mixing, and then add The formula amount of micron-grade aluminum powder is mixed with double planetary system until th...

Embodiment 1

[0033] 1) Preparation of organic intermediates

[0034] According to weight percentage, 5.00% ethyl cellulose, 2.00% phenolic resin, 55.00% terpineol, 22.00% butyl carbitol acetate, 3.00% dibutyl phthalate, 5.00% N-butanol and 8.00% ethylene glycol phenyl ether are prepared as raw materials for organic intermediates. Put the raw materials of organic intermediates into the reactor, control the reaction temperature at 60°C, and dissolve for 2 hours to obtain organic intermediates with uniform and transparent components. .

[0035] 2) Preparation of glass powder

[0036] According to the weight percentage of 70.00% bismuth trioxide, 10.00% boron trioxide, 0.50% antimony trioxide, 4.50% silicon dioxide, 12.00% zinc oxide and 3.00% aluminum oxide, the glass powder is prepared Each component is dried at 110°C for 2 hours, mixed evenly and put into a corundum crucible, smelted in a high temperature furnace at 1000°C for 1.5 hours, and the melt is quenched in electronic grade pure w...

Embodiment 2

[0041] 1) Preparation of organic intermediates

[0042] According to weight percentage, 6.00% ethyl cellulose, 1.00% phenolic resin, 55.00% terpineol, 24.00% butyl carbitol acetate, 3.00% dibutyl phthalate, 5.00% N-butanol and 6.00% ethylene glycol phenyl ether are prepared as raw materials for organic intermediates. Put the raw materials of organic intermediates into the reaction kettle, control the reaction temperature at 70°C, and dissolve for 2 hours to obtain organic intermediates with uniform and transparent components. .

[0043] 2) Preparation of glass powder

[0044] According to the weight percentage of 65.00% bismuth trioxide, 12.00% boron trioxide, 0.50% antimony trioxide, 4.50% silicon dioxide, 15.00% zinc oxide and 3.00% aluminum oxide, the glass powder is prepared The raw materials were dried at 110°C for 3 hours, mixed evenly and put into a corundum crucible, melted in a high temperature furnace at 1100°C for 1 hour, and the melt was quenched in electronic gr...

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Abstract

The invention discloses an aluminium paste for a laser pore-forming partial back contact-passivating emitter crystalline silicon solar cell and a preparation method and an application thereof. The aluminium paste comprises the following components in percentage by weight: 50.00-75.00% of micro-size aluminium powder, 0.50-2.00% of glass powder, 15.00-30.00% of organic intermediate, 0.02-1.00% of inorganic additive and 1.00-2.50% of organic additive, and the sum of the components of the aluminium paste is 100% in percentage by weight. The required aluminium paste is prepared by steps of dosing, dual-planetary stirring, three-roller machine grinding, screening and filtering. When the aluminium paste is applied, the aluminium paste is printed on a monocrystalline wafer by a 325-mesh silk screen, and then the monocrystalline wafer is dried and sintered. An aluminium back field is formed in the pore-forming place in the back surface of the battery piece by the aluminium paste; the aluminium paste is relatively strong in adhesion with the passivating layer in the non-pore-forming places; and in addition, pill of aluminium or aluminium protruding parts are not formed on the surface of an aluminium film, so that the formed aluminium electrode is excellent in the electrical performance.

Description

technical field [0001] The invention relates to an electronic paste for crystalline silicon solar cells, in particular to an aluminum paste suitable for partial back passivation of crystalline silicon solar cells, specifically a lead-free, adhesive paste with a passivation layer An aluminum paste for laser-opening partial back contact-passivated emitter crystalline silicon solar cells with excellent, good BSF layer formation, and smooth appearance, as well as its preparation method and application. Background technique [0002] Because crystalline silicon solar cells have the characteristics of high power generation efficiency, stable performance, and mature industrialization process, currently in the field of photovoltaic power generation, the use of crystalline silicon as the substrate accounts for more than 95% of the entire photovoltaic power generation field. The power generation principle of crystalline silicon solar cells is Sunlight is irradiated on the cell, and the...

Claims

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Application Information

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IPC IPC(8): H01B1/22H01B13/00H01L31/0224
CPCH01B1/22H01B13/00H01L31/022425Y02E10/50
Inventor 史卫利汪贺杏
Owner DK ELECTRONICS MATERIALS INC
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