Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane

A test equipment and single-layer film technology, applied in the field of solar cells, to achieve the effect of simple equipment and low cost

Inactive Publication Date: 2014-12-03
上海太阳能工程技术研究中心有限公司
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At present, there is no finished light an

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  • Testing device and testing method for light dark conductivity of HIT exclusive single-layer membrane

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Embodiment Construction

[0021] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0022] see figure 1 , the HIT exclusive single-layer film light and dark conductivity test equipment of the present invention includes a sample stage 2, a light source 4, a programmable electrometer 3 and a large shielding cover 1. Wherein, the sample stage 2 contains two tablet-pressing probes, and the entire sample stage is built in a cassette (not shown), completely sealed; the light source 4 is arranged directly above the sample stage 2; the programmable electrometer 3 is set In a small shielding case (not shown in the figure), connect and ground with shielded signal wires and two pressure probes; large shielding case 1 shields the above-mentioned sample stage 2, light source 4 and programmable electrometer 3 , and grounded.

[0023] The sample to be tested in the present invention is formed by depositing a 5nm intrinsic amorphous silic...

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Abstract

The invention relates to a testing device and testing method for light dark conductivity of an exclusive single-layer membrane for a high-efficiency heterojunction with intrinsic thin layer (HIT). The testing device comprises a lead, a probe, a sample platform, a dark box, an electrometer, a light source and a shielding case. According to the testing method, two coplanar aluminium electrodes are formed at the surface of a sample by evaporation, wherein the material between the two electrodes is used as the tested sample; the sample is placed at the sealed sampling platform; the programmable electrometer and the light source are connected; and the conductivity of the thin film is calculated based on the current obtained by testing. According to the invention, the testing device and the testing method are simple; the cost is low; and the photoelectric property of the material can be reflected accurately.

Description

technical field [0001] The invention relates to a solar cell, in particular to a test device and a test method for the light-dark conductivity of a HIT exclusive single-layer film. Background technique [0002] Thin-film silicon / crystalline silicon heterojunction HIT solar cell is a kind of high-efficiency crystalline silicon solar cell that can be realized at low cost. This kind of solar cell uses a doped thin film silicon layer to make a pn junction on a crystalline silicon substrate. This thin-film silicon layer is usually only a dozen nanometers thick, and can be deposited below 200°C using a plasma-enhanced chemical vapor deposition (PECVD) process. Therefore, compared with traditional solar cells that rely on diffusion to prepare pn junctions, thin-film silicon / crystalline silicon heterojunction solar cells require less energy input and have higher open-circuit voltage, thus attracting great attention. [0003] The thin-film silicon layer of HIT solar cells is genera...

Claims

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Application Information

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IPC IPC(8): G01R29/00
Inventor 郭群超柳琴庞红杰张愿成张军
Owner 上海太阳能工程技术研究中心有限公司
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