Thin-film transistor and producing method thereof

Abstract

The invention provides a thin-film transistor and a producing method thereof. The thin-film transistor comprises a gate, an oxide channel layer, a gate insulation layer, a source, a drain and a dielectric layer. The gate is configured on a substrate. The oxide channel layer, which is configured on the substrate, stacks with the gate in an up and down manner. The material of the oxide channel layer comprises a metallic element and the content of the metallic element is in a gradient distribution along the depth direction of the oxide channel layer. The gate insulation layer is arranged between the gate and the oxide channel layer. The source and the drain which are parallelly configured are connected to the oxide channel layer. The dielectric layer is coated on the side, which is away from the substrate, of the source and the drain.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a thin film transistor and its manufacturing method. Background technique [0002] In recent years, with the rapid development of electronic technology, thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT LCD) with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation has gradually become the market choice. mainstream. [0003] With the requirement of large-area and high-resolution thin-film transistor liquid crystal displays, thin-film transistors must have high carrier mobility to shorten their charging and discharging time. In recent years, considering the problems of carrier mobility, flexibility and uniformity, the channel layer of the thin film transistor can be made of an oxide channel layer made of an oxide semiconductor la...

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Problems solved by technology

However, since the oxide channel layer is very sensitive to water, oxygen, acid etchant, etc., any environmental influence or process abnormality may cause abnormal electrical properties and uniformity of the device

In addition, the oxide channel layer will generate a photocurrent (photo current) under the irradiation of ultraviolet light, which will cause the lifetime (lifetime) and photoelectric characteristics of the thin film transistor to deteriorate.

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