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Amorphous Ga2O3 photoelectric detector and preparation method and performance improvement method thereof

A photodetector and amorphous technology, which is applied in the field of photoelectric detection, can solve the problems affecting the application effect of devices and the reduction of device responsivity, and achieve the effects of dark current reduction, dark current suppression, and light-to-dark ratio improvement

Active Publication Date: 2020-09-22
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, we found that although the precise regulation of the oxygen flow rate greatly reduces the dark current and greatly improves the response speed, it also leads to a significant decrease in the responsivity of the device, which seriously affects the actual application effect of the device.

Method used

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  • Amorphous Ga2O3 photoelectric detector and preparation method and performance improvement method thereof
  • Amorphous Ga2O3 photoelectric detector and preparation method and performance improvement method thereof
  • Amorphous Ga2O3 photoelectric detector and preparation method and performance improvement method thereof

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preparation example Construction

[0043] Correspondingly, the embodiment of the present invention provides amorphous Ga 2 o 3 The preparation method of photodetector, its main flow can comprise:

[0044] Pretreatment of the substrate: The substrate is ultrasonically cleaned with chemical reagents and then blown dry.

[0045] Put the pretreated substrate into the cavity of the vacuum deposition equipment, start the vacuum pump, and prepare hydrogen-doped amorphous Ga by vacuum deposition method in a hydrogen-containing atmosphere at 20°C to 400°C. 2 o 3 Thin-film active layer: Specifically, after starting the vacuum pump and pumping the cavity of the vacuum deposition equipment to the background vacuum, a high-precision gas flowmeter is used to feed hydrogen-containing gas, and record the amount of hydrogen-containing gas in the cavity Vacuum value, wait for a period of time after the flow rate of the hydrogen-containing gas and the vacuum in the cavity are stable, so that the hydrogen-containing gas is even...

Embodiment 1

[0056] This embodiment provides a high light-to-dark ratio amorphous Ga 2 o 3 A method for preparing a photodetector, the structure of which is a metal-semiconductor-metal (MSM) structure. The specific preparation method of the photodetector of the present embodiment is as follows:

[0057] Step 1: Clean a piece of far-ultraviolet ultra-pure quartz substrate with a size of 15mm×15mm×0.5mm ultrasonically, blow it dry with dry high-purity nitrogen, and place it on a sample holder of the same size. After fixing the substrate, put it into the growth chamber of the magnetron sputtering instrument equipped with a gallium oxide ceramic target (the purity of the gallium oxide ceramic target used in this example is 99.999%), and the sample stage is raised to the highest point (target material The distance from the substrate is about 8mm), close the baffle under the sample, and finally tighten the quick release port of the chamber.

[0058] Step 2: Start the vacuum pumping system of ...

Embodiment 2

[0065] This embodiment is basically the same as Embodiment 1, the difference is that in step 2, after the background vacuum is lowered to less than 4.5E-4Pa, 1.0 sccm of high-purity hydrogen is introduced, and after the gas flow is stable, wait for 10 minutes. And the vacuum in the cavity has been stable, then 10sccm of high-purity argon gas is introduced, the vacuum in the cavity reaches 1.6E-1Pa, and the glow sputters Ga 2 o 3 Thin film, the film thickness is about 84nm. The resulting amorphous Ga 2 o 3 The photodetector is designated as sample 2.

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Abstract

The invention discloses an amorphous Ga2O3 photoelectric detector and a preparation method and a performance improvement method thereof. The amorphous Ga2O3 photoelectric detector comprises a substrate, a hydrogen-doped amorphous Ga2O3 thin film active layer deposited on the surface of the substrate and an electrode arranged on the hydrogen-doped amorphous Ga2O3 thin film active layer, wherein thehydrogen-doped amorphous Ga2O3 thin film active layer is an amorphous thin film prepared by adopting a vacuum deposition method in a hydrogen-containing atmosphere at the temperature of 20-400 DEG C;the vacuum deposition method comprises any one of magnetron sputtering, pulse laser deposition, electron beam deposition and chemical vapor deposition.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to an amorphous Ga 2 o 3 A photodetector, a method for preparing the same, and a method for improving its performance. Background technique [0002] Since the background radiation in the solar-blind (200-280nm) band is close to zero in the atmosphere, the solar-blind ultraviolet detector working in this band has the advantages of low background noise and high sensitivity, so it is widely used in space communication, flame monitoring, biomedicine, missiles, etc. Guidance and ozone monitoring and other fields have very broad application prospects; similarly, X-ray detectors also play an important role in medical testing, military weapons, space communications, satellite navigation and other fields. Ga 2 o 3 Due to the wide bandgap of 4.5-5.0 electron volts, low noise current, and strong radiation resistance, the material has attracted more and more attention in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/18
CPCH01L31/02963H01L31/1828H01L31/1876Y02P70/50
Inventor 隋妍心霍文星王涛韩祖银朱锐梅增霞梁会力杜小龙
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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