Semiconductor structure
A semiconductor and inorganic dielectric layer technology is applied in the field of semiconductor structures with oxide channel layers to achieve the effects of improving optoelectronic properties and life, and reducing photocurrent
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[0030] In order to further explain the technical means adopted by the present invention to achieve the intended purpose of the invention and its efficacy, the specific implementation, structure, characteristics and efficacy of the semiconductor structure proposed according to the present invention will be described in detail below in conjunction with the accompanying drawings and preferred embodiments. The description is as follows.
[0031] figure 1 It is a schematic cross-sectional view of a semiconductor structure according to an embodiment of the present invention. Please refer to figure 1 , in this embodiment, the semiconductor structure 100 a includes a gate 110 , a gate insulating layer 120 , an oxide channel layer 130 , a source 140 , a drain 145 and a dielectric stack 150 a.
[0032] In detail, the gate 110 is disposed on a substrate 10 , wherein the gate 110 may be composed of a metal stack or a single metal layer, and its material is, for example, aluminum, copper...
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