9results about How to "Increase photocurrent" patented technology

The invention provides a preparation method of a tin-doped scaly nano gallium oxide thin film solar blind ultraviolet photoelectric detector. The preparation method comprises the following steps: carrying out cleaning pretreatment on a single crystal GaN substrate; depositing an Au thin film on the pretreated single crystal GaN substrate to serve as a catalyst layer; the preparation method comprises the following steps: mixing Ga2O3, diamond and SnO2 powder according to a certain mass ratio to prepare a precursor; putting the single crystal GaN substrate deposited with the Au thin film and a precursor into a CVD furnace, and growing according to preset gas flow, pressure intensity, reaction temperature and reaction time to obtain a tin-doped scaly nano gallium oxide thin film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide thin film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method. The conductivity of the thin film is improved through tin doping, the specific surface area and light absorption are increased through the scaly nanostructure, high-performance deep ultraviolet photoelectric detection is achieved, and the technical problem that in the prior art, the dark current of a device is high is solved.

The application discloses a kind of perovskite laminated solar cell and preparation method thereof, photovoltaic module and photovoltaic device, belong to solar cell technical field.The perovskite laminated solar cell from light-receiving front to light-receiving back successively includes substrate, bottom electrode, first hole transport layer, wide band gap perovskite layer, first electron transport layer, barrier layer, intermediate interconnection layer, narrow band gap perovskite layer, second electron transport layer, hole blocking layer, top electrode;The intermediate interconnection layer includes first sublayer, self-assembled monolayer and second sublayer, first sublayer faces first electron transport layer, second sublayer faces narrow band gap perovskite layer, and self-assembled monolayer is located between first sublayer and second sublayer.The application can inhibit interface scattering and reduce wide-angle reflection loss under oblique incidence, while maintaining excellent electrical transmission to promote carrier transfer and recombination, significantly improve the overall photovoltaic performance of device.

The application discloses a titanium-doped bismuth vanadate film photo-anode and a preparation method thereof. A precursor solution formed by mixing bismuth nitrate, an aqueous potassium iodide solution and an ethanol solution of benzoquinone is used as an electrolyte, fluorine-doped tin dioxide conductive glass (FTO) is used as a working electrode, a platinum sheet is used as a counter electrode, Ag / AgCl is used as a reference electrode, a bias voltage of -0.1 V vs. Ag / AgCl is applied to the working electrode, and a bismuth oxyiodide precursor film is deposited on the FTO. Then, a mixed solution of titanium tetrachloride and acetylacetone vanadyl dimethyl sulfoxide is added dropwise to the bismuth oxyiodide precursor film, and the titanium-doped bismuth vanadate film photo-anode is obtained through calcination and neutralization treatment. The titanium-doped bismuth vanadate film photo-anode has higher photoelectrocatalytic efficiency and charge transport efficiency, and can be widely applied to the fields of photoelectrocatalytic hydrogen production and photoelectrocatalytic degradation of pollutants.

This invention discloses a polyimide resin solution, its preparation method, and its application in perovskite solar cells. The polyimide resin solution is prepared by mixing a mixture of fluorinated aromatic diamines and rigid aromatic diamines, and a mixture of fluorinated aromatic tetracarboxylic dianhydrides and rigid aromatic tetracarboxylic dianhydrides as raw materials. In the mixture of fluorinated aromatic diamines and rigid aromatic diamines, the molar ratio of the fluorinated aromatic diamines to the rigid aromatic diamines is 10–50:90–50; in the mixture of fluorinated aromatic tetracarboxylic dianhydrides and rigid aromatic tetracarboxylic dianhydrides, the molar ratio of the fluorinated aromatic tetracarboxylic dianhydrides to the rigid aromatic tetracarboxylic dianhydrides is 100–80:0–20. A polyimide resin solution is coated onto the back surface of a perovskite solar cell device to form a coating with a cutoff transmission wavelength of 380–420 nm and a transmittance of over 80% in the visible light band of 450 nm and above. This coating not only provides resistance to ultraviolet radiation but also facilitates the conversion of solar energy into electrical energy, thus balancing the high efficiency and stability of the battery. Furthermore, the manufacturing process is simple and efficient.

This application discloses a perovskite / crystalline silicon tandem solar cell, belonging to the field of solar cell technology. The perovskite / crystalline silicon tandem solar cell includes a perovskite layer, a buffer layer, an intermediate interconnect layer, a crystalline silicon layer, a first metal grid electrode, and a heat-dissipating optical reflective layer. The buffer layer, comprising a thermoplastic resin, is stacked on one side of the perovskite layer. The intermediate interconnect layer is stacked on the side of the buffer layer opposite to the perovskite layer. The crystalline silicon layer is stacked on the side of the intermediate interconnect layer opposite to the buffer layer. The first metal grid electrode is stacked on the side of the crystalline silicon layer opposite to the intermediate interconnect layer. The heat-dissipating optical reflective layer is disposed on the side of the first metal grid electrode opposite to the crystalline silicon layer and is at least partially embedded in the grid of the first metal grid electrode. The heat-dissipating optical reflective layer comprises graphene and boron nitride. This application can improve the photoelectric output capability, thermal stability, and long-term operational reliability of the perovskite / crystalline silicon tandem solar cell.

This invention provides a non-contact interactive system based on a photoelectric sensor array, comprising: a photoelectric sensor array, the photoelectric sensor array including: a transparent substrate; a conductive layer formed on the transparent substrate; a patterned confinement layer formed on the conductive layer for forming a patterned array of photoelectric active materials; a patterned array of photoelectric active materials formed on the patterned confinement layer, wherein each patterned unit in the array forms a miniature photoelectric sensor unit under the drive of an external bias voltage; a surface light source located on the back side of the substrate of the photoelectric sensor array; and a reflector movably located on the front side of the substrate of the photoelectric sensor array. This interactive system utilizes the high responsivity and fast response speed characteristics of the photoelectric sensor array to enable the interactive interface to quickly track signals from moving objects, and achieves photocurrent growth through light reflection from the reflector onto the surface light source, thereby realizing a responsive, contactless, three-dimensional human-computer interaction.

The application discloses a kind of phthalocyanine copper / inverted pyramid perovskite heterojunction photodetector and preparation method, comprising the following steps: 1) etching out the silicon piece with pyramid surface microstructure, as the base of growing perovskite single crystal;2) preparation perovskite solution, utilize silicon piece and glass piece as the frame of growth area restriction, utilize seed growth method, space limited method and inverse temperature crystallization method combined growth method preparation surface pyramid perovskite single crystal;3) utilize thermal evaporation in perovskite single crystal surface evaporation phthalocyanine copper film formation heterojunction, then utilize conductive carbon paste as upper and lower electrode preparation photodetector.The photodetector prepared by the application is stable at normal temperature and pressure, and has better photoelectric response relative to the control group device in a high humidity environment, and the device has good long-time humidity stability, which has guiding significance for the future high-performance photodetection field in high humidity environment such as sea, ship and island.

The utility model discloses an X-ray vertical channel field effect transistor detector, which comprises an X-ray sensing part, a current modulation part and a charge coupling induction part, the X-ray sensing part is composed of a high-atomic-number semiconductor crystal and a corresponding semiconductor structure, absorbs high-energy X-rays and generates electron / hole pairs; the current modulation part is composed of a porous source electrode, a semiconductor channel and a drain electrode; the charge coupling induction part is composed of a gate electrode, a dielectric layer and a porous source electrode. The dielectric layer is over the X-ray sensing layer. According to the utility model, the photocurrent is amplified by utilizing the gain of the field effect transistor, so that high-sensitivity X-ray detection is obtained; the X-ray sensing layer is arranged between the grid electrode and the dielectric layer, dark current is blocked through the dielectric layer, an incident X-ray signal is transmitted to light current through charge coupling induction, and low-noise X-ray detection is achieved.

This invention discloses a high-performance inverted perovskite solar cell and its fabrication method. The solar cell sequentially comprises an ITO conductive glass layer, a hole transport layer PTAA, and a MAPbI perovskite layer modified with 3,6-dibromocarbazole. 2.91 Br 0.09 Electron transport layer OAmI, Electron transport layer PC 61 The perovskite active layer consists of a BM (bulk barrier), a hole blocking layer (BCP), and a metal electrode layer (Ag). This approach enhances the carrier transport capability of the perovskite layer by introducing conjugated carbazole molecules into the active layer. This improves the energy level matching between the perovskite and carrier transport layers, increases photocurrent, improves film morphology, balances charge transport, and achieves enhanced photoelectric conversion efficiency, improved stability, and effective suppression of device hysteresis.