518results about How to "Increase photocurrent" patented technology

The invention discloses a fingerprint identification module and a fingerprint identification display device. A shading layer arranged on photosensitive induction units in the fingerprint recognition module comprises first shading parts arranged above photosensitive diodes of the photosensitive induction units, and fixed potential signal lines, wherein each first shading part is electrically connected with one electrode end of the photosensitive diode below, and each first shading part is connected with the corresponding fixed potential signal line. As the fixed potential signal lines are moved to above the photosensitive diodes and the shading layer is used directly to form the fixed potential signal lines, a space-occupying connecting hole is avoided, the area taken up by the photosensitive diodes is maximized, the photocurrent produced by the photosensitive diodes during fingerprint detection is increased, and the accuracy of fingerprint detection is improved.

The invention discloses a broad-spectrum absorption black silicon solar cell structure. The structure sequentially comprises an irradiated face broad spectrum light trapping layer, a p-shaped silicon substrate, a n-shaped phosphorous diffusion layer and a backlight surface broad-spectrum absorption black silicon layer from top to bottom. The invention simutaneously discloses a preparation method of the broad-spectrum absorption black silicon solar cell structure. In the invention, the characteristics of the black silicon material can be fully utilized to enable sunlights entering into the cell to be almost absorbed; simutaneously a back dopant gradient can be utilized to separate eletron-hole pairs generated in the black silicon by a self-configuration field separation method, so that the eletron-hole pairs can be received and transfomred into light current by electrodes, thereby solving the problem that the traditional silicon substrate cell can not absorb and transform solar spectrum of which the wavelength is above 1.1 microns; and the PN junction of the structure is formed by diffuse junctions, the open-circuit voltage of the cell can be ensured not to be influenced by lowered black silicon lower-energy photon conversion, thereby effectively improving the photoelectric conversion efficiency of the silicon substrate sollar cell.

The present disclosure relates to the field of organic optoelectronics. More particularly, the present disclosure relates to photovoltaic structures and to methods to produce the same. One aspect of the disclosure is a photovoltaic structure comprising:

• • an electron acceptor material, and
  • an electron donor material, wherein the electron donor material comprises:
    • a host material, and
    • a guest material,

wherein the energy of the lowest excited singlet state of the guest is smaller than the energy of lowest excited singlet state of the host, wherein the fluorescence emission spectrum of the host overlaps with at least part of the absorption spectrum of the guest and wherein the energy of the lowest excited triplet state of the guest is larger than the energy of the lowest excited triplet state of the host.

The invention belongs to the technical field of polymer solar cells and particularly relates to a reciprocal form electrode polymer solar cell using TiO2 as an electronic transmission layer, CuPc as a cavity transmission layer and a preparation method thereof. The method includes the steps of: using sol-gel technology to grow a layer of uniform and compact nanocrystal titanium dioxide (TiO2) film on an ITO glass substrate, then spin-coating a layer of P3HT:PCBM solution dissolved by dichlorobenzene, after annealing, using thermal evaporation to grow a layer of CuPc with certain thickness and finally evaporating Au electrode. The polymer solar cell prepared by utilizing the method solves two problems of the traditional polymer solar cell, namely that the mixed solution of 3, 4-EDOT and polystyrolsulfon acid corrode the surface of ITO glass, and the excessive thinness of cathode buffer layer LiF causes the operating process to be difficult to be controlled accurately.

The invention discloses a thin-film transistor array substrate and a manufacturing method thereof. The method comprises the following steps of: (1) providing a substrate with a pixel region and a light sensing region; (2) forming a first patterned conducting layer on the substrate, wherein the first patterned conducting layer comprises a grid electrode positioned in the pixel region and a first electrode positioned in the light sensing region, and forming a light sensing dielectric layer on the first electrode; (3) forming a grid electrode insulating layer on the substrate to cover the grid electrode, the light sensing dielectric layer and the first electrode; (4) forming a patterned semiconductor layer on the grid electrode insulating layer above the grid electrode; (5) forming a source electrode and a drain electrode on the patterned semiconductor layer at two sides of the grid electrode, wherein the grid electrode, the source electrode and the drain electrode form a thin-film transistor; and (6) forming a second electrode on the light sensing dielectric layer.

A device and related fabrication method is provided for an organic/inorganic hybrid optical amplifier with a function of converting infrared light to visible light. The hybrid device integrates an inorganic heterojunction phototransistor (HPT), an embedded metal electrode mirror with a dual function as an optical mirror and charge injection electrode, and an organic light emitting diode (OLED). This integrated optical amplifier is capable of amplifying the incoming light and producing light emission with a power greater than that of the incoming signal. In the second aspect of the invention, the optical amplifier is capable of detecting an incoming infrared electromagnetic wave and converting the wave back to a visible light wave. The optical device has dual functions of optical power amplification and photon energy up-conversion. The optical amplifier device consists of an InGaAs/InP based HPT structure as photodetector, gold-coated metals as embedded mirror and a top-emission OLED. New optical up-conversion imaging devices are also provided that include focal-point array of the organic/inorganic hybrid optical amplifier devices in pixelated formats. The up-conversion imaging devices have a fast response time to enable gated operation for practical applications such as night vision, active surveillance, semiconductor wafer inspection and eye-safe infrared imaging. More importantly, the up-conversion imaging devices would be particularly useful for detecting ultra-low intensity infrared scenes.

The invention discloses a method for synthetizing high-stability metal halide perovskite/lead sulfide heterostructure nanocrystals. The method comprises the following steps: firstly mixing lead halide with reactive solvent oleic acid, organic amine with long alkyl chains and octadecene in the presence of an inert gas so as to completely dissolve lead halide; then heating a mixed solution to 160-200 DEG C, rapidly injecting a caesium precursor, and reacting to generate CsPbX3; cooling to room temperature, then sequentially injecting a sulphur precursor and a lead precursor, and stirring for reaction, thereby finally obtaining the CsPbX3/PbS heterostructure nanocrystals. The synthetized CsPbX3/PbS heterostructure nanocrystals are uniform in appearance; the synthesis method is simple; due to epitaxial growth of lead sulfide, the perovskite performance stability is improved, and the CsPbX3/PbS heterostructure nanocrystals are enhanced in light-emitting efficiency and are beneficial to later-stage photoelectric device assembly.

The invention discloses a CdS/metallic organic frame composite photocatalysis material as well as a preparation method and application thereof. The composite photocatalysis material is prepared by modifying a metallic organic frame on the surfaces of CdS nanoparticles. The preparation method of the composite photocatalysis material comprises the following steps: firstly, synthesizing the CdS nanoparticles by using a solvent thermal method, and modifying the metallic organic frame on the surfaces of the CdS nanoparticles by using an in-situ heterogeneous deposition method, thereby obtaining theCdS/metallic organic frame composite photocatalysis material. Compared with conventional CdS, the CdS/metallic organic frame composite photocatalysis material has improved photoelectric stability, and conversion efficiency, circulation stability and catalysis selectivity of photocatalytic reduction of carbon dioxide.

The invention provides an organic solar cell. Metal nano-particles are arranged in an electronic transmission layer and/ or hole transmission layer, light adsorption is enhanced by the surface plasma effect of the metal nano-particles, and the photocurrent of a device is increased so as to obviously improve the photon to current conversion efficiency of the organic solar cell device. Meanwhile, because the metal nano-particles are positioned in the electron transmission layer and/ or hole transmission layer, the metal nano-particles are prevented from directly contacting with an optical activity layer, and therefore the electrical properties, such as device resistance, open-circuit voltage, and fill factors, are not affected.

The invention discloses a p-n-type Bi2O3/BiPO4 heterostructure visible light-response photocatalytic film material and a preparation method thereof. The preparation method comprises the following steps of dissolving a glycol solution containing Bi<3+> and PO4<3-> into water, carrying out precipitation, washing, drying, constant-temperature calcinations and grinding to obtain white BiPO4 powder, dissolving KI and the white BiPO4 powder into acetone to obtain an electrolyte solution, carrying out electrophoretic deposition on a conductive substrate in the electrolyte solution to obtain a precursor BiPO4 film, dissolving KI, Bi(NO3)3 and p-benzoquinone into water, adjusting a pH value to obtain a Bi2O3 electrodeposition solution, carrying out electrodeposition on the precursor BiPO4 film, a platinum sheet, an Ag/AgCl electrode and the Bi2O3 electrodeposition solution, carrying out dry and carrying out calcination. The composite photocatalyst has high photocatalytic activity and stability and has good electrocatalysis degradation effects.

The invention discloses an asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and a manufacturing method thereof. The detector comprises a Si/SiO2 substrate, a first electrode is arranged on the Si/SiO2 substrate, a two-dimensional material layer is arranged on the first electrode, a second electrode is arranged on the two-dimensional material layer, and the two-dimensional material layer is an n-layer heterojunction formed by graphene and two-dimensional material which are overlapped. The asymmetrical electrodes with different work functions are adopted, formation of a Fermi energy level difference from the first electrode to the second electrode is promoted, photocarriers are generated and then quickly diffused to an external circuit, quick combination of an electron hole can be avoided due to existence of the energy level difference, and the photo response of the device can be enhanced; and as the graphene and the two-dimensional material are combined, the high carrier mobility and the super quick response time of the graphene, and the high absorption rate towards light by the two-dimensional material are used respectively, and a super quick and super high-response photodetector can be realized.

The invention discloses perovskite solar cell conductive carbon paste which comprises organic solvents, binders and conductive filling materials. The conductive carbon paste further comprises inorganic additives. The inorganic additives are ZrO2 or NiO powder. By mass percent, the conductive carbon paste comprises 6%-15% of binders, 14%-20% of conductive filling materials and 3%-5% of inorganic additives. The invention further discloses a carbon counter electrode for a perovskite solar cell. The carbon counter electrode is prepared and acquired by adopting the above-mentioned conductive carbon paste in a screen printing means. The invention further discloses the perovskite solar cell comprising the above-mentioned carbon counter electrode. A method of preparing the conductive carbon paste is further disclosed. The conductive carbon paste which does not make a perovskite film corroded further increases the photoelectric conversion efficiency.

A bi-functional photovoltaic device is provided. The bi-functional photovoltaic device includes at least one solar cell and a control device. Each of the solar cell includes a multilayer semiconductor layer of group III-V compound semiconductor, a first electrode disposed on the back of the multilayer semiconductor layer, and a second electrode disposed on the front of the multilayer semiconductor layer. The control device connects with the at least one solar cell in order to control them functioning as solar cell or light emitting diode.

The invention provides a semiconductor electrode for a dye-sensitized solar cell, comprising a conductive bottom layer, a porous semiconductor layer formed on the conductive bottom layer and a dye layer formed on the porous semiconductor layer, wherein the porosity of the porous semiconductor layer is 40-85% and the thickness of the porous semiconductor layer is 6-20 microns. The invention also provides a preparation method of the semiconductor electrode and the dye-sensitized solar cell containing same, wherein the preparation method comprises the following steps: paving sizing agent which contains semiconductor grains, pore-forming agent and dispersing agent on the conductive bottom layer, calcining the sizing agent to obtain a solid film, putting the solid film in solution to be dipped into pores and obtain a porous solid film, calcining the porous solid film, and forming the porous semiconductor layer on the conductive bottom layer. The porosity of the porous semiconductor layer is high, can improve the absorption load quantity of the dye on the porous semiconductor layer, increases light generated current, and improves opto-electrical conversion rate.

The invention discloses a graphene/silicon/graphene-based avalanche photodetector and a manufacturing method thereof. The avalanche photodetector comprises an n-type silicon substrate, a silicon dioxide isolation layer, a silicon dioxide window, a silicon dioxide insulation layer, a top electrode, a graphene interdigital electrode film and an anti-reflection layer. Graphene serves the transparent interdigital electrode and together with the silicon substrate, the photodetector of an MSM-type structure is formed. The photodetector can carry out wide spectrum detection, the problem that the traditional silicon-based PIN junction is low to ultraviolet light detection response can be solved; the anti-reflection layer enhances absorption of incident lights, and photocurrent is enhanced; under the effect of large reverse bias, a strong electric field is generated among the grapheme interdigital electrodes, collision ionization is likely to happen to photocarrier and silicon lattice, and high gain is obtained. The graphene/silicon/graphene-based avalanche photodetector and a manufacturing method thereof have the advantages of high response degree, quick response speed, large internal gain, small switch ratio and low power consumption.

The invention discloses a semiconductor electrode for a dye-sensitized solar cell, which comprises a conductive bottom layer, a compact semiconductor layer formed on the conductive bottom layer, a porous semiconductor layer formed on the compact semiconductor layer, and a dye layer formed on the porous semiconductor layer, wherein the compact semiconductor layer and the porous semiconductor layer comprise semiconductor particles and conductive particles; and the conductive particles can be used as electron traps, so that electrons and holes in a semiconductor are effectively separated, the electron-hole service life is prolonged, and the light generated current is increased so as to improve the photo-electro transition rate of the dye-sensitized solar cell.

An emitter structure of a crystal silicon heterojunction solar battery is formed by an amorphous silicon film (a-Si:H) with double-layer gradient doping concentration. A composite structure of a heavily-doped p-a-Si:H layer/lightly-doped p-a-Si:H layer or a heavily-doped n-a-Si:H layer/lightly-doped n-a-Si:H layer serves as the emitter of the crystal silicon heterojunction solar battery adopting the a-Si:H/c-Si structure; the heavily-doped layer is connected with a conducting layer; the lightly-doped layer is connected with an intrinsic a-Si:H layer on the surface of crystalline silicon; when the crystalline silicon is n-type, the emitter adopts the heavily-doped p-a-Si:H layer/slightly-doped p-a-Si:H layer structure; and when the crystalline silicon is p-type, the emitter is the heavily-doped n-a-Si:H/slightly-doped n-a-Si:H layer. By adopting the double-layer structure, the open-circuit voltage and short-circuit current of the crystal silicon solar battery can be improved, contact barrier between the amorphous silicon layer and the conducting layer is reduced and the conversion efficiency of the solar battery is improved.