32results about How to "Increase photocurrent" patented technology

The invention provides an image sensor and a manufacturing method thereof, and relates to semiconductor manufacturing. The photoelectric sensing area in the image sensor can be formed by a plurality of doped deposition layers. Therefore, ion implantation does not need to be carried out in the preparation process of the photoelectric sensing area, and damage of ion implantation to the substrate is avoided. In addition, the atomic mass of the doping ions of the bottom doped deposition layer in the multiple doped deposition layers is large, a groove is formed in the bottom doped deposition layer, the atomic mass of the doping ions of the top doped deposition layer is relatively small, and the groove formed in the bottom doped deposition layer is filled with the doping ions of the top doped deposition layer. Therefore, the stability of the photoelectric sensing area can be ensured by arranging the doped ions with relatively high atomic mass at the bottom, and meanwhile, the doped deposition layer can be filled with a large amount of doped ions with relatively low atomic mass through the grooves, so that more free electrons are provided, the light current of the photodiode during light sensing is improved, and the photoelectric sensing efficiency is improved. Therefore, the light sensing capability of the image sensor is improved.

The invention belongs to the technical field of water photoelectrolysis material preparation, and relates to a non-metallic element doped fullerene composite bismuth vanadate water photoelectrolysis method which comprises the following steps: s1, cleaning a conductive substrate; s2, the fullerene powder is subjected to non-metallic element doping treatment through a chemical vapor deposition method; s3, stirring the modified fullerene treated in the step s2, a Bi source and a V source to prepare catalyst slurry; s4, the conductive surface of a conductive base material is placed in the catalyst slurry downwards, and hydrothermal in-situ growth is carried out to prepare a photoelectrocatalysis film; and s5, naturally cooling to room temperature, taking out the conductive substrate, and heating and calcining to obtain the photoelectrolysis water electrode, according to the preparation method, fullerene is doped with different metal elements by adopting a chemical vapor deposition method, and a uniform, compact and firm catalyst film is formed on FTO (Fluorine-doped Tin Oxide) in a hydrothermal in-situ growth manner, so that a more stable and high-activity photoelectrolysis water electrode is obtained; the preparation method is simple, the cost is low, and large-scale electrode preparation can be realized.

The invention relates to the field of photoelectric material and device physics, and discloses a preparation method of a Ga2O3: Sn / HfOx heterojunction photoelectric sensor, and the method comprises the following steps: S1, cleaning a substrate, S2, preparing a Ga2O3: Sn thin film, S3, growing an electrode, S4, preparing an HfOx thin film, and carrying out neural synapse bionic application of the Ga2O3: Sn / HfOx heterojunction photoelectric sensor. Comprising Ga2O3: Sn / HfOx synaptic plasticity research and Ga2O3: Sn / HfOx photoelectric sensor sensing and storage calculation integrated application research. The Ga2O3: Sn thin film is prepared by adopting a sol-gel method with accurate and controllable doping amount, donor doping with controllable concentration is realized by controlling the mass of the added tin sheet, so that the photocurrent and responsivity of the photoelectric sensor are increased, the HfOx thin film is prepared by adopting a magnetron sputtering method, the photoelectric sensor with a double-layer structure is constructed, the detection rate and responsivity of the device are improved, and the photoelectric sensor is suitable for the field of photoelectric sensors. An ultraviolet signal is used to simulate a plurality of synaptic functions, including EPSC, PPF and empirical learning behaviors. Furthermore, a high-linearity light-enhanced electrical suppression behavior is realized, and a basis is provided for realizing a high-precision image recognition function.

The utility model relates to the technical field of solar cells, in particular to a passivation contact solar cell and a photovoltaic module. The passivation contact solar cell comprises a silicon substrate, a dielectric layer, a first doped polycrystalline silicon layer and a second doped polycrystalline silicon layer. The dielectric layer is arranged on the silicon substrate, and the density of the dielectric layer is greater than or equal to 2.2 g / cm < 3 >. And the first doped polycrystalline silicon layer is arranged on one surface, deviating from the silicon substrate, of the dielectric layer. The second doped polycrystalline silicon layer is arranged on the surface, deviating from the dielectric layer, of the doped polycrystalline silicon layer, and the forbidden bandwidth of the second doped polycrystalline silicon layer is larger than that of the doped polycrystalline silicon layer. The second doped polycrystalline silicon layer is used for improving parasitic absorption of a long wave band, and higher photo-generated current can be obtained by reducing parasitic absorption of light of the long wave band. The more compact dielectric layer is used for preventing elements doped in the doped polycrystalline silicon layer from being pushed towards the silicon substrate, so that auger recombination is reduced, and the conversion efficiency of the passivation contact solar cell is further improved.

The invention discloses a full-perovskite laminated solar cell and a preparation method thereof, and relates to the field of solar cells, and the full-perovskite laminated solar cell comprises a transparent substrate layer, a first electrode layer and a first broadband gap sub-cell function layer which are sequentially stacked in the direction of incident light. One side, far away from incident light, of the transparent substrate layer is a suede; the first electrode layer covers the transparent substrate layer with uniform thickness; the first wide-band-gap sub-cell functional layer covers the first electrode layer with uniform thickness; the first electrode layer is a transparent electrode. The micro-nano structure provided by the invention is stable in anti-reflection effect, and is suitable for all-perovskite laminated solar cells of different materials and configurations; the light absorption capacity of the working spectral band of the solar cell can be remarkably improved, the light current is greatly improved, the device is easy to prepare, no extra technological process needs to be introduced to enable perovskite and the micro-nano structure to grow in a conformal mode, and the technical requirement and the production cost of the production process are remarkably reduced.

The invention discloses a high-efficiency organic-inorganic ternary perovskite solar cell and a preparation method thereof, and the solar cell sequentially comprises an ITO conductive glass substrate layer, a hole transport layer (MeO-2PACz), a ternary perovskite layer formed by mixing an ionic liquid TFPBF4 and a perovskite layer Cs0.05 (FA0.95 MA0.05) 0.95 Pb (I0.95 Br0.05) 3, a [6, 6]-phenyl-C61-butyric acid isomethyl ester electron transport layer (PCBM), a 2, 4, 6, 7, 8-tetramethyl-3, 7, 8-tetramethyl-3, 7, 8-tetramethyl-3, 7, 8-tetramethyl-3, 7, 8-tetramethyl-3, 7, 8-tetramethyl-3, 7, 8-tetramethyl-3, 7, 8-tetramethyl-3, 7, 8-tetramethyl-3, 8-tetramethyl-3 The thin film solar cell is characterized by comprising a metal electrode layer, a metal electrode layer, a hole blocking layer, a 9, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline hole blocking layer (BCP) and a metal Ag electrode layer. According to the scheme, the fluorine-rich ionic liquid is introduced into the perovskite active layer, so that multi-point passivation of defects is realized, the photoluminescence intensity is improved, the form of the film is improved, the crystallinity is expanded, charge transfer is balanced, the photoelectric conversion efficiency is enhanced, the stability is improved, and the hysteresis effect of a device is effectively inhibited.

The invention relates to a monomer material containing a benzisoxazole structure, a conjugated polymer composite material, a preparation method and an application. The monomer material and the polymer thereof have a benzisoxazole unit structure, and benzisoxazole has relatively strong electron withdrawing capability, so that benzisoxazole is suitable for being used as an A unit in a D-A copolymerization type donor, and can be copolymerized with different D units to respectively obtain polymer donors with wide band gaps and medium band gaps; the monomer material and the polymer thereof have a strong rigid conjugate plane, and can form a polymer film with highly ordered and high carrier migration characteristics through pi-pi supramolecular interaction, thereby ensuring that the polymer film has good carrier mobility. Due to the characteristic, filling factors of the polymer solar cell can be improved, different acceptor materials can be matched, a photovoltaic active layer with complementary light absorption is obtained, effective absorption and utilization of sunlight are achieved, and light current is improved.

The invention provides a preparation method of a tin-doped scaly nano gallium oxide thin film solar blind ultraviolet photoelectric detector. The preparation method comprises the following steps: carrying out cleaning pretreatment on a single crystal GaN substrate; depositing an Au thin film on the pretreated single crystal GaN substrate to serve as a catalyst layer; the preparation method comprises the following steps: mixing Ga2O3, diamond and SnO2 powder according to a certain mass ratio to prepare a precursor; putting the single crystal GaN substrate deposited with the Au thin film and a precursor into a CVD furnace, and growing according to preset gas flow, pressure intensity, reaction temperature and reaction time to obtain a tin-doped scaly nano gallium oxide thin film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide thin film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method. The conductivity of the thin film is improved through tin doping, the specific surface area and light absorption are increased through the scaly nanostructure, high-performance deep ultraviolet photoelectric detection is achieved, and the technical problem that in the prior art, the dark current of a device is high is solved.

The invention provides a preparation method of a rhodium-based electron medium and enzyme co-loaded COF photocatalyst, and provides a two-in-one synthesis method, by means of the method, the rhodium-based electron medium is successfully modified on a COF frame, efficient transfer of photo-induced electrons is achieved, the regeneration rate of NADH is increased, meanwhile, FDH enzyme is co-loaded, the FDH enzyme is embedded into the COF frame, and the catalytic activity of the COF frame is improved. The stability and reusability of enzyme reaction in the system are effectively protected, efficient utilization of NADH is achieved, the performance of reducing carbon dioxide through the photo-enzyme cascade reaction is remarkably enhanced, and the excellent photo-enzyme cascade performance is shown. When the loading and adding mass ratio of the rhodium-based electron medium is 0.6, the yield of formic acid per unit enzyme obtained by the loading enzyme reaction is 9 times of the yield of formic acid per unit enzyme reaction of the free enzyme reaction, which indicates that the material disclosed by the invention has higher photocatalytic ability and enzyme-retaining activity.

The invention discloses a self-powered lithium tantalate film photoelectric detector and a preparation method thereof. The self-powered lithium tantalate film photoelectric detector sequentially comprises a silicon substrate, a silicon dioxide insulating layer, an intrinsic lithium tantalate film layer, an ion implantation lithium tantalate film layer and a metal electrode layer from bottom to top, the preparation method specifically comprises the following steps: (1) cleaning the lithium tantalate film, and polishing the surface of the lithium tantalate film; (2) ion implantation; (3) annealing treatment; (4) spin-coating photoresist, and preparing a mask plate pattern; and (5) depositing a metal electrode. Compared with a traditional self-powered photoelectric detector, the self-powered lithium tantalate film photoelectric detector is a miniature integratable photoelectric detector, the integration level is greatly improved, and the self-powered lithium tantalate film photoelectric detector has a wider application prospect.

The application discloses a kind of perovskite laminated solar cell and preparation method thereof, photovoltaic module and photovoltaic device, belong to solar cell technical field.The perovskite laminated solar cell from light-receiving front to light-receiving back successively includes substrate, bottom electrode, first hole transport layer, wide band gap perovskite layer, first electron transport layer, barrier layer, intermediate interconnection layer, narrow band gap perovskite layer, second electron transport layer, hole blocking layer, top electrode;The intermediate interconnection layer includes first sublayer, self-assembled monolayer and second sublayer, first sublayer faces first electron transport layer, second sublayer faces narrow band gap perovskite layer, and self-assembled monolayer is located between first sublayer and second sublayer.The application can inhibit interface scattering and reduce wide-angle reflection loss under oblique incidence, while maintaining excellent electrical transmission to promote carrier transfer and recombination, significantly improve the overall photovoltaic performance of device.

The present application relates to the field of radiation protection technology in high-altitude nuclear explosion environments, and in particular to a photocell. High-energy particles in a nuclear explosion environment can cause a voltage track collapse effect in the chip circuit, resulting in chip state errors and catastrophic consequences. In order to make the chip circuit resistant to radiation, the traditional method of using capacitors to compensate for the voltage drop generated by the photocurrent has the disadvantages of complex structure, small unit charge and large volume. The present application provides a photocell, including a PN junction system and a Schottky diode; stacking PN junctions to receive X-rays to generate photocurrent, using Schottky diodes to control the current direction of the circuit to compensate for the voltage drop caused by the nuclear explosion to the chip circuit; at the same time, because the photocurrent generated by the photocell increases with the increase of the X-ray dose rate, it has adaptability, making the circuit more suitable for nuclear explosion environments; the present application has the advantages of simple structure, small photocell area and good voltage stabilization effect.

The present invention relates to a technology for controlling the growth of island-shaped cuprous oxide on the surface of a gold nanorod in a solution phase by a small molecule thiol ligand, and obtaining nanoparticles (hot dog shape, dumbbell shape, hammer shape) of a gold rod / cuprous oxide Janus structure with continuously changing morphology, novel structure, high uniformity, high repeatability, and adjustable size of cuprous oxide and aspect ratio of the gold rod. The physical separation of metal and semiconductor structural units in the Janus structure enables both materials to have exposed surfaces, and while having the advantages of a core-shell structure, there is no problem of charge accumulation. The nanomaterial finally obtained can be directly used for photocurrent testing, and has a significant charge separation efficiency compared to a core-shell structure. Thanks to the surface plasmon resonance absorption of the gold rod in the absorption of visible light, the photocatalytic performance of the gold rod / cuprous oxide Janus structure is significantly higher than that of the gold ball / cuprous oxide Janus structure.

The application discloses a titanium-doped bismuth vanadate film photo-anode and a preparation method thereof. A precursor solution formed by mixing bismuth nitrate, an aqueous potassium iodide solution and an ethanol solution of benzoquinone is used as an electrolyte, fluorine-doped tin dioxide conductive glass (FTO) is used as a working electrode, a platinum sheet is used as a counter electrode, Ag / AgCl is used as a reference electrode, a bias voltage of -0.1 V vs. Ag / AgCl is applied to the working electrode, and a bismuth oxyiodide precursor film is deposited on the FTO. Then, a mixed solution of titanium tetrachloride and acetylacetone vanadyl dimethyl sulfoxide is added dropwise to the bismuth oxyiodide precursor film, and the titanium-doped bismuth vanadate film photo-anode is obtained through calcination and neutralization treatment. The titanium-doped bismuth vanadate film photo-anode has higher photoelectrocatalytic efficiency and charge transport efficiency, and can be widely applied to the fields of photoelectrocatalytic hydrogen production and photoelectrocatalytic degradation of pollutants.

This invention discloses a polyimide resin solution, its preparation method, and its application in perovskite solar cells. The polyimide resin solution is prepared by mixing a mixture of fluorinated aromatic diamines and rigid aromatic diamines, and a mixture of fluorinated aromatic tetracarboxylic dianhydrides and rigid aromatic tetracarboxylic dianhydrides as raw materials. In the mixture of fluorinated aromatic diamines and rigid aromatic diamines, the molar ratio of the fluorinated aromatic diamines to the rigid aromatic diamines is 10–50:90–50; in the mixture of fluorinated aromatic tetracarboxylic dianhydrides and rigid aromatic tetracarboxylic dianhydrides, the molar ratio of the fluorinated aromatic tetracarboxylic dianhydrides to the rigid aromatic tetracarboxylic dianhydrides is 100–80:0–20. A polyimide resin solution is coated onto the back surface of a perovskite solar cell device to form a coating with a cutoff transmission wavelength of 380–420 nm and a transmittance of over 80% in the visible light band of 450 nm and above. This coating not only provides resistance to ultraviolet radiation but also facilitates the conversion of solar energy into electrical energy, thus balancing the high efficiency and stability of the battery. Furthermore, the manufacturing process is simple and efficient.

The invention relates to the field of semiconductor materials, in particular to a photoresistor material and a preparation method thereof. During preparation, transition metal ions and rare earth metal ions are sequentially injected into sulfur quantum dots, and annealing is required in an argon environment after the ion injection. The annealing temperature is 250-350° C. and the annealing time is 10-60 min. The invention uses transition metal ions to inject sulfur quantum dots to form corresponding metal sulfide quantum dots, so that the metal sulfide quantum dots have a photoresistor effect. The injection of rare earth metal ions can not only promote the growth of metal sulfide quantum dots, but also reduce their optical band gap, improve the absorption of light by photosensitive materials, generate greater photocurrent under the same illumination conditions, and improve the photoelectric conversion efficiency. The invention broadens the application field of sulfur quantum dots and provides a new path for the preparation of photoresistor materials.

The invention relates to the field of photoelectric detector structures of electrical devices, and discloses a hexagonal boron nitride packaged two-dimensional metal sulfide photoelectric detector and a preparation method thereof. The chemical inert surface provided by the hexagonal boron nitride (h-BN) not only can effectively prevent environmental degradation, but also can improve the interface quality between the two-dimensional metal sulfide material and the base material, and obviously reduces charge scattering caused by the surface roughness and defects of the traditional base material, thereby realizing more efficient charge transmission. Experimental results show that an atom smooth surface brought by h-BN / MoS2 / h-BN packaging promotes efficient transmission of charge carriers to a great extent, and the photoelectric property of the two-dimensional metal sulfide material is remarkably enhanced. By eliminating the surface roughness caused by the substrate and reducing the defect state to the maximum extent, the h-BN effectively reduces charge carrier scattering, and the responsiveness and photocurrent measurement are further enhanced. The h-BN packaging also plays a key role in inhibiting exciton annihilation, and is crucial for improving the photoelectric property.

The invention provides a silicon wafer etching solution. The silicon wafer etching solution comprises the following components: H2O2, HF, Cu (NO3) 2.3 H2O and H2O, the invention also provides a silicon wafer etching method, which comprises the following steps: S1, carrying out ultrasonic cleaning on a silicon wafer substrate to obtain a silicon wafer subjected to primary cleaning; s2, concentrated nitric acid with the mass concentration of 65-68% is added into ultrapure water in batches, and a nitric acid diluent is prepared; s3, placing the silicon wafer cleaned for the first time in the silicon wafer etching solution for etching to obtain an etched silicon wafer; s4, soaking the etched silicon wafer in a nitric acid diluent to remove the residual silicon wafer etching liquid, and cleaning the silicon wafer with deionized water to obtain a silicon wafer cleaned for the second time; and S5, soaking the silicon wafer cleaned for the second time in an HF solution, cleaning the silicon wafer with deionized water, and drying the silicon wafer to obtain the required silicon wafer. The silicon wafer etching method provided by the invention is simple in process and low in cost, and the etched silicon wafer is low in light reflectivity and good in light absorptivity.

This application discloses a perovskite / crystalline silicon tandem solar cell, belonging to the field of solar cell technology. The perovskite / crystalline silicon tandem solar cell includes a perovskite layer, a buffer layer, an intermediate interconnect layer, a crystalline silicon layer, a first metal grid electrode, and a heat-dissipating optical reflective layer. The buffer layer, comprising a thermoplastic resin, is stacked on one side of the perovskite layer. The intermediate interconnect layer is stacked on the side of the buffer layer opposite to the perovskite layer. The crystalline silicon layer is stacked on the side of the intermediate interconnect layer opposite to the buffer layer. The first metal grid electrode is stacked on the side of the crystalline silicon layer opposite to the intermediate interconnect layer. The heat-dissipating optical reflective layer is disposed on the side of the first metal grid electrode opposite to the crystalline silicon layer and is at least partially embedded in the grid of the first metal grid electrode. The heat-dissipating optical reflective layer comprises graphene and boron nitride. This application can improve the photoelectric output capability, thermal stability, and long-term operational reliability of the perovskite / crystalline silicon tandem solar cell.

The invention discloses a mixed-dimensional nanostructure photoelectric detector and a preparation method and brain-like calculation application thereof, and belongs to the field of optoelectronics. A one-dimensional first semiconductor material nanorod and a three-dimensional second semiconductor material particle layer are constructed on a substrate to jointly form a mixed-dimensional nanostructure; the mixed-dimensional nanostructure is used as a heterostructure to build a built-in electric field for promoting carrier separation and photoelectric transmission; and the electrode is arranged on the substrate. The photoelectric detection performance is remarkably improved, the artificial synapse device is successfully prepared, the preparation process of the device is simple, the cost is low, and the device has a huge application prospect in the fields of neuromorphic devices and optical communication systems.

The invention provides a preparation method of an antimony sulfide selenide solar cell with a uniform absorption layer component gradient. Through the optimization scheme that the longitudinal component distribution uniformity of the Sb2 (S, Se) 3 thin film is improved through the low-cost triethanolamine complexing agent and the energy band of the Sb2 (S, Se) 3 device is matched, the problem that the longitudinal component gradient of the absorption layer is not ideal due to the fact that reaction precipitation of Se < 2 + > and Sb < 3 + > in a hydrothermal reaction system is too fast is solved.

This invention provides a non-contact interactive system based on a photoelectric sensor array, comprising: a photoelectric sensor array, the photoelectric sensor array including: a transparent substrate; a conductive layer formed on the transparent substrate; a patterned confinement layer formed on the conductive layer for forming a patterned array of photoelectric active materials; a patterned array of photoelectric active materials formed on the patterned confinement layer, wherein each patterned unit in the array forms a miniature photoelectric sensor unit under the drive of an external bias voltage; a surface light source located on the back side of the substrate of the photoelectric sensor array; and a reflector movably located on the front side of the substrate of the photoelectric sensor array. This interactive system utilizes the high responsivity and fast response speed characteristics of the photoelectric sensor array to enable the interactive interface to quickly track signals from moving objects, and achieves photocurrent growth through light reflection from the reflector onto the surface light source, thereby realizing a responsive, contactless, three-dimensional human-computer interaction.

The application discloses a kind of phthalocyanine copper / inverted pyramid perovskite heterojunction photodetector and preparation method, comprising the following steps: 1) etching out the silicon piece with pyramid surface microstructure, as the base of growing perovskite single crystal;2) preparation perovskite solution, utilize silicon piece and glass piece as the frame of growth area restriction, utilize seed growth method, space limited method and inverse temperature crystallization method combined growth method preparation surface pyramid perovskite single crystal;3) utilize thermal evaporation in perovskite single crystal surface evaporation phthalocyanine copper film formation heterojunction, then utilize conductive carbon paste as upper and lower electrode preparation photodetector.The photodetector prepared by the application is stable at normal temperature and pressure, and has better photoelectric response relative to the control group device in a high humidity environment, and the device has good long-time humidity stability, which has guiding significance for the future high-performance photodetection field in high humidity environment such as sea, ship and island.

The invention discloses a photoelectric chip and a manufacturing method thereof. The photoelectric chip comprises a triode group array, a conductive substrate and a first insulating layer, the triode group array is composed of a plurality of triode groups which are distributed in an array mode. The triode group comprises a photoelectric triode, at least one common triode and a second insulating layer; the photoelectric triode and the common triode are isolated from each other through a second insulating layer; and the collector of the photoelectric triode is connected with the collectors of all the common triodes through a substrate to form the collector of the triode group. The structure is simple, the triode group comprises photoelectric triodes and common triodes, the number of the common triodes can be adjusted to adjust the photocurrent and the photocurrent / dark current ratio, and the device can be used for different solutions; the two triodes are manufactured at the same time, so that the process steps are reduced and the cost is reduced; relatively high light current is realized by relatively weak light, so that damage to cells due to high light intensity in the photoelectric tweezers is avoided; the photocurrent and the dark current are independently controlled, and the device performance and the application range are improved.

The utility model discloses an X-ray vertical channel field effect transistor detector, which comprises an X-ray sensing part, a current modulation part and a charge coupling induction part, the X-ray sensing part is composed of a high-atomic-number semiconductor crystal and a corresponding semiconductor structure, absorbs high-energy X-rays and generates electron / hole pairs; the current modulation part is composed of a porous source electrode, a semiconductor channel and a drain electrode; the charge coupling induction part is composed of a gate electrode, a dielectric layer and a porous source electrode. The dielectric layer is over the X-ray sensing layer. According to the utility model, the photocurrent is amplified by utilizing the gain of the field effect transistor, so that high-sensitivity X-ray detection is obtained; the X-ray sensing layer is arranged between the grid electrode and the dielectric layer, dark current is blocked through the dielectric layer, an incident X-ray signal is transmitted to light current through charge coupling induction, and low-noise X-ray detection is achieved.

The invention relates to an In2O3 / PPy / g-C3N4 heterojunction material synthesized by a solvothermal method and an in-situ polymerization method. The In2O3 / PPy / g-C3N4 heterojunction material is used for detecting CO2 gas at room temperature and under visible light irradiation. According to the composite material, the unique electronic property of In2O3, the high conductivity of PPy and the good visible light absorption characteristic of g-C3N4 are combined, and the photogenerated charge separation efficiency is improved through the heterojunction effect, so that the CO2 detection performance is remarkably improved. The sensing material not only has high sensitivity and low detection limit, but also has good stability and reusability, is environment-friendly, conforms to the development trend of environmental protection, and has wide application prospects in the fields of environmental monitoring and the like.

The invention relates to a preparation method of a nickel-based gel-carbon nitride composite photocatalyst and application of the nickel-based gel-carbon nitride composite photocatalyst in CO2 reduction.The composite photocatalyst is formed by compounding nickel-based gel and ultra-thin carbon nitride obtained through secondary calcination, and the preparation method comprises the steps of preparing the ultra-thin carbon nitride through secondary calcination of urea, preparing amino acid gel, and preparing the nickel-based gel-carbon nitride composite photocatalyst. The gel is doped with metal components and compounded with ultrathin carbon nitride. The composite photocatalytic material disclosed by the invention has the advantages of strong stability, strong light capture ability, high electron-hole pair separation efficiency, excellent photocatalytic performance and the like, and particularly has relatively strong photocatalytic activity which is about 4 times of the catalytic performance of pure carbon nitride when being applied to gas-solid phase CO2 reduction; the method has a good application prospect in the aspect of reducing CO2 into available fuel through photocatalysis.

The invention belongs to the technical field of semiconductors, and particularly relates to an oxide dielectric passivation layer material and a preparation method thereof. The OH trap defect is introduced into the HfO2 thin film, the OH trap defect is used for assisting hole carrier tunneling movement, hole transmission in the HfO2 thin film is improved, and therefore the performance of the Si-based photoelectric detector and the performance of the solar cell device are further improved. When the OH-doped HfO2 thin film material is used as a dielectric passivation layer, the performance of the perovskite CH3NH3PbI3 / Si heterojunction photoelectric detector can be remarkably improved, and the OH-doped HfO2 thin film material has very high industrial practicability.

The invention relates to the technical field of semiconductor electronic devices, and provides a transverse PIN type photosensitive element, a preparation method thereof and a photosensitive detector. The transverse PIN type photosensitive element at least comprises an I-type layer which is provided with a first surface and a second surface which are oppositely arranged; the P-type layer is formed on the first surface of the I-type layer, and the upper surface of the P-type layer and the first surface of the I-type layer are located on the same plane; the N-type layer is formed on the first surface of the I-type layer, the upper surface of the N-type layer and the first surface of the I-type layer are on the same plane, and the I-type layer exists between the N-type layer and the P-type layer; and a passivation layer is arranged below the second surface of the I-type layer. According to the transverse PIN type light-sensitive element adopting the structure, an N-type back surface field is not designed on the back surface of the light-sensitive element, but the passivation layer is added, so that the response time of the transverse PIN type light-sensitive element can be greatly reduced, and meanwhile, the light current, especially the long-wave light current, in the transverse PIN type light-sensitive element is not influenced.

The invention discloses a low-power-consumption photoconductive detector and a preparation method thereof, relates to a photoelectric technology, and aims to solve the problems of insufficient balance between high responsivity and low power consumption and the like in the prior art. Comprising an active region semiconductor, a gate dielectric layer and a gate electrode which are sequentially stacked to form a grating effect; one end of the active region semiconductor is provided with a drain electrode, and the other end is provided with a source electrode; the contact between the active region semiconductor and the drain electrode and the contact between the active region semiconductor and the source electrode are Schottky contact. An electron trap is arranged in the gate dielectric layer and is used for absorbing photo-induced electrons generated by the semiconductor in the active region, so that an energy band, far away from the gate dielectric layer, of the semiconductor in the active region moves upwards. The method has the advantages that the dark current is reduced and the light response characteristic is enhanced based on the grating enhancement effect. On-off conversion can be achieved under grid bias, power consumption is reduced, light current and light responsivity are improved, and light detection efficiency is greatly improved.