Thin-film transistor array substrate and preparation method thereof

Abstract

The invention discloses a thin-film transistor array substrate and a manufacturing method thereof. The method comprises the following steps of: (1) providing a substrate with a pixel region and a light sensing region; (2) forming a first patterned conducting layer on the substrate, wherein the first patterned conducting layer comprises a grid electrode positioned in the pixel region and a first electrode positioned in the light sensing region, and forming a light sensing dielectric layer on the first electrode; (3) forming a grid electrode insulating layer on the substrate to cover the grid electrode, the light sensing dielectric layer and the first electrode; (4) forming a patterned semiconductor layer on the grid electrode insulating layer above the grid electrode; (5) forming a source electrode and a drain electrode on the patterned semiconductor layer at two sides of the grid electrode, wherein the grid electrode, the source electrode and the drain electrode form a thin-film transistor; and (6) forming a second electrode on the light sensing dielectric layer.

Description

technical field [0001] The present invention relates to a thin film transistor array substrate and a manufacturing method thereof, in particular to a thin film transistor array substrate with a light sensor and a manufacturing method thereof. Background technique [0002] With the advancement of technology, the technology of the display is also constantly developing and its demand is increasing day by day. In the early days, due to the excellent display quality and technical maturity of the cathode ray tube (Cathode Ray Tube, CRT), it monopolized the display market for many years. However, due to the rise of the concept of green environmental protection recently, based on the characteristics of large energy consumption and large radiation generated by cathode ray tubes, and the limited space for flattening their products, cathode ray tubes cannot meet the market demand for light, thin, short , small, beautiful and low power consumption market trends. Therefore, the thin an...

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Problems solved by technology

[0005] However, when the amorphous silicon material is used as the light sensing material of the photosensor, the following problem is faced: even if no voltage is applied to the electrodes on both sides of the amorphous silicon, as long as the amorphous silicon material is irradiated by light, the photosensor will generate The problem of photocurrent attenuation affects the reliability of the photosensor

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