Emitter structure of crystal silicon heterojunction solar battery

A solar cell and emitter technology, applied in the field of solar cells, can solve the problems of increasing the recombination probability of photogenerated carriers, deteriorating the performance of solar cells, and increasing the density of defect states, so as to improve the open circuit voltage and filling factor, improve the photogenerated current and Efficiency, effect of low doping concentration

Inactive Publication Date: 2012-09-19
NANCHANG UNIV
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Problems solved by technology

Such a high doping concentration will lead to too much defect state density in the film, increasing the recombination probability of photogenerated carriers, and leading to the degradation

Method used

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  • Emitter structure of crystal silicon heterojunction solar battery
  • Emitter structure of crystal silicon heterojunction solar battery
  • Emitter structure of crystal silicon heterojunction solar battery

Examples

Experimental program
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Example Embodiment

[0015] Embodiment 1: For a crystalline silicon cell using n-type silicon wafers, a p-type layer is prepared to form a pn junction, and specific implementation cases are described in conjunction with the content of the present invention and combined with the accompanying drawings to further illustrate the present invention.

[0016] The preparation sequence and performance parameters of the p-type double-layer gradient doped emitter are as follows:

[0017] 1) Deposit a shallow doped a-Si:H layer on the prepared crystalline silicon wafer with the intrinsic a-Si:H passivation layer deposited; the thickness of this layer is 15nm, and the doping concentration is 2×10 18 cm -3 . 2) Continue to deposit a heavily doped a-Si:H layer on the shallowly doped a-Si:H layer; the thickness of this layer is 3nm, and the doping concentration is 9×10 19 cm -3 .

[0018] After the gradient emitter is prepared, the TCO transparent conductive film, conductive grid lines and other structures are prepared ...

Example Embodiment

[0020] Example 2: For crystalline silicon cells using p-type silicon wafers, an n-type layer is prepared to form a pn junction,

[0021] The preparation sequence and performance preparation of n-type double-layer gradient doped emitter are as follows:

[0022] 1) Deposit a shallow doped a-Si:H layer on the prepared crystalline silicon wafer on which the intrinsic a-Si:H passivation layer has been deposited; the thickness of this layer is 15nm and the doping concentration is 1.5×10 18 cm -3 . 2) Continue to deposit a heavily doped a-Si:H layer on the shallowly doped a-Si:H layer; the thickness of this layer is 3nm, and the doping concentration is 9×10 19 cm -3 .

[0023] After preparing the gradient emitter, install the TCO transparent conductive film, conductive grid lines and other structures in the same process as the emitter composed of a single film.

[0024] The obtained crystalline silicon heterojunction solar cell with a double-layer gradient doped emitter structure and a cryst...

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Abstract

An emitter structure of a crystal silicon heterojunction solar battery is formed by an amorphous silicon film (a-Si:H) with double-layer gradient doping concentration. A composite structure of a heavily-doped p-a-Si:H layer/lightly-doped p-a-Si:H layer or a heavily-doped n-a-Si:H layer/lightly-doped n-a-Si:H layer serves as the emitter of the crystal silicon heterojunction solar battery adopting the a-Si:H/c-Si structure; the heavily-doped layer is connected with a conducting layer; the lightly-doped layer is connected with an intrinsic a-Si:H layer on the surface of crystalline silicon; when the crystalline silicon is n-type, the emitter adopts the heavily-doped p-a-Si:H layer/slightly-doped p-a-Si:H layer structure; and when the crystalline silicon is p-type, the emitter is the heavily-doped n-a-Si:H/slightly-doped n-a-Si:H layer. By adopting the double-layer structure, the open-circuit voltage and short-circuit current of the crystal silicon solar battery can be improved, contact barrier between the amorphous silicon layer and the conducting layer is reduced and the conversion efficiency of the solar battery is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to an emitter structure of a crystalline silicon heterojunction solar cell. Background technique [0002] Today, when non-renewable energy sources such as fossil energy are increasingly exhausted, the energy crisis is approaching day by day, and new energy and renewable energy technologies need to be developed and applied urgently. Solar energy is one of the most important renewable clean energy available to human beings. In solar energy utilization technology, solar power generation is a very important and promising category, and silicon-based solar cells have attracted widespread attention due to their abundant raw material sources and relatively mature preparation technologies, and are the mainstream product category of solar cells. The structure of today's silicon-based solar cells has been continuously improved and optimized with the development of technology. The heterojunction sol...

Claims

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Application Information

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IPC IPC(8): H01L31/0747H01L31/0352H01L31/0224
CPCY02E10/50
Inventor 黄海宾周浪高江
Owner NANCHANG UNIV
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