Emitter structure of crystal silicon heterojunction solar battery

Abstract

An emitter structure of a crystal silicon heterojunction solar battery is formed by an amorphous silicon film (a-Si:H) with double-layer gradient doping concentration. A composite structure of a heavily-doped p-a-Si:H layer / lightly-doped p-a-Si:H layer or a heavily-doped n-a-Si:H layer / lightly-doped n-a-Si:H layer serves as the emitter of the crystal silicon heterojunction solar battery adopting the a-Si:H / c-Si structure; the heavily-doped layer is connected with a conducting layer; the lightly-doped layer is connected with an intrinsic a-Si:H layer on the surface of crystalline silicon; when the crystalline silicon is n-type, the emitter adopts the heavily-doped p-a-Si:H layer / slightly-doped p-a-Si:H layer structure; and when the crystalline silicon is p-type, the emitter is the heavily-doped n-a-Si:H / slightly-doped n-a-Si:H layer. By adopting the double-layer structure, the open-circuit voltage and short-circuit current of the crystal silicon solar battery can be improved, contact barrier between the amorphous silicon layer and the conducting layer is reduced and the conversion efficiency of the solar battery is improved.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to an emitter structure of a crystalline silicon heterojunction solar cell. Background technique [0002] Today, when non-renewable energy sources such as fossil energy are increasingly exhausted, the energy crisis is approaching day by day, and new energy and renewable energy technologies need to be developed and applied urgently. Solar energy is one of the most important renewable clean energy available to human beings. In solar energy utilization technology, solar power generation is a very important and promising category, and silicon-based solar cells have attracted widespread attention due to their abundant raw material sources and relatively mature preparation technologies, and are the mainstream product category of solar cells. The structure of today's silicon-based solar cells has been continuously improved and optimized with the development of technology. The heterojunction sol...

AI Technical Summary

Problems solved by technology

Such a high doping concentration will lead to too much defect state density in the film, increasing the recombination probability of photogenerated carriers, and leading to the degradation of solar cell performance

This is a contradictory phenomenon; this problem has not been resolved, and there is no report on a good solution to this contradiction in the industry at this stage

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