34results about How to "Reduce recombination current" patented technology

The invention provides a thin film strip structure, a manufacturing method the thin film strip structure, and a thin film strip structure array. The manufacturing method of the thin film strip structure comprises the following steps: providing a semiconductor substrate; forming at least one dent or a row of separating holes on a first surface and / or a second surface of the semiconductor substrate; etching the semiconductor substrate from the first surface to form at least two first grooves, and etching the semiconductor substrate from the second surface to form at least one second groove; and separating the semiconductor substrate from the dent or the separating holes, and cutting or stretching the semiconductor substrate from the first grooves and the second grooves to form the thin film strip structure. With the adoption of the thin film strip structure, the damage to the strip structure and the thin film when separating the thin film strip structure from the semiconductor substrate can be effectively reduced, and the production rate can be increased. The thin film strip structure and the manufacturing method of the thin film strip structure also can save the semiconductor material and reduce the manufacturing cost.

The invention discloses a CMOS integrated process BJT structure, which comprises: P wells and N wells arranged side by side on a silicon substrate, a first shallow trench isolation is formed at the boundary between the P well and N well, and a first shallow trench isolation is formed in the P well. Two shallow trench isolations, a first P+ doped region is formed in the P well between the first and second shallow trench isolations, and a first N+ doped region is formed in the N well next to the first shallow trench isolation , a second N+ doped region is formed in the P well on the other side of the second shallow trench isolation, and a parallel first electrode and a metal silicide barrier layer are formed on the second N+ doped region, and the first P+ doped region A second electrode is formed on the first N+ doped region, and a third electrode is formed on the first N+ doped region; before the source-drain region ion implantation process, a flat layer is deposited, source-drain region ion implantation is performed, a metal silicide barrier layer is deposited, and metal silicide is performed. The blocking layer is etched to form the first electrode to the third electrode. The invention also discloses a BJT manufacturing method of CMOS integration technology. The invention can improve the uniformity of the current gain of the transistor, and can realize precise adjustment of the current gain.

The invention discloses a method of producing SiGe HBT transistors, which includes steps of reducing the doping concentration of emitter polysilicon, controlling the undercut dimension of an emitter window, increasing the thickness of an emitter monocystal silicon layer, and increasing the final activation temperature of devices, thereby maintaining bases out of highly defective areas and furthergreatly reducing the base recombination current.

The invention provides a BJT device structure and a manufacturing method thereof. The structure comprises a P well; an N+ region which is positioned on the P well; a barrier layer structure which is located on the N+ region and is a frame-shaped structure surrounding the periphery of the N+ region, wherein the region in the barrier layer structure is an emitter region of the BJT device, the N+ region of the emitter region is provided with a plurality of STI regions which are arranged at intervals, and the upper surface of the P well is higher than the bottoms of the STI regions; a base region which is positioned on the periphery of the emitter region; and a collector region which is positioned on the periphery of the base region. The BJT device structure and the manufacturing method thereof have the following beneficial effects: the BJT device structure can significantly reduce the recombination current of the emitter region and the base region due to the fact that the STI region of the emitter region is a discontinuous structure. Therefore, the amplification coefficient of the BJT device is effectively improved.