Method for implementing base region window of silicon germanium heterojunction transistor

A heterojunction transistor and base technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of discontinuous metal silicide, increased resistance of the outer base, and insufficient insulation. Achieve the effect of eliminating sidewall residues, reducing base resistance, and reducing defects
CN102097315AActive Publication Date: 2011-06-15SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
Publication Date
2011-06-15

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Abstract

The invention discloses a method for implementing a base region window of a silicon germanium heterojunction transistor, which comprises the following steps of: depositing a composite dielectric film on a silicon chip with an embedded layer, a collector region and a substrate isolation region on a silicon substrate; performing dry etching on the composite dielectric film, defining the base regionwindow, and etching an oxide film stopped on the composite dielectric film; after the base region window is opened and before the oxide film of the composite dielectric film is removed, depositing a dielectric film layer, and forming a D-shaped side wall at the interface step of the base region window by using the dielectric film layer; and meanwhile, performing wet removal on the residual oxide film in the base region window by using the protection of the D-shaped side wall, and epitaxially growing an SiGe base region. The interface step of the base region window is changed slowly because ofthe formation of the D-shaped side wall, and the slowly changed step formed by the D-shaped side wall is continuously reserved after SiGe extension and has no insulator residue in the subsequent emitter polycrystalline silicon side wall process, so that continuous metal silicide is formed, the resistance of an outer base region is reduced, and the performance of the device is improved.
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Description

technical field

[0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for realizing a base region window of a silicon-germanium heterojunction transistor. Background technique

[0002] In the manufacturing process of SiGe (silicon germanium) heterojunction transistor (SiGe HBT), the formation of SiGe base region is realized by means of epitaxy, including selective epitaxy, non-selective epitaxy and compound epitaxy.

[0003] The current conventional non-selective epitaxial base formation method is (combined with figure 1 shown): 1. Dielectric film 105 deposition. The dielectric film 105 is an oxide film, or a combination of an oxide film and other film qualities. 2. The SiGe base window opens. 3. SiGe epitaxial growth, forming the SiGe base monocrystalline silicon layer 110 and the SiGe outer base region 106, growing monocrystalline silicon in the monocrystalline silicon region, and growing polycrystalline silicon in oth...

Claims

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