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Heterojunction bipolar transistor and epitaxial growth method thereof

A heterojunction bipolar, epitaxial growth technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of transistor current gain decrease, current increase, poor crystallinity, etc., to improve crystallinity , Improve the transient effect and reduce the effect of hydrogen ion concentration

Pending Publication Date: 2021-12-28
深圳市中科光芯半导体科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The poor crystallinity of the base material will lead to an increase in the recombination current in the base layer, which will reduce the current gain of the transistor. Therefore, in order to obtain better transistor characteristics, the base layer must maintain good crystallinity.

Method used

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  • Heterojunction bipolar transistor and epitaxial growth method thereof
  • Heterojunction bipolar transistor and epitaxial growth method thereof
  • Heterojunction bipolar transistor and epitaxial growth method thereof

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Embodiment Construction

[0039] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of the present application.

[0040] It should ...

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Abstract

The invention provides a heterojunction bipolar transistor and an epitaxial growth method thereof. In the epitaxial growth method of the heterojunction bipolar transistor, heat treatment is carried out before epitaxial growth of an emitter contact layer. The heat treatment environment is an arsenic-free gas environment. And before the heat treatment process is carried out, the closing of each pipeline valve in the organic metal vapor deposition reaction furnace into which the arsenic-containing gas compound is introduced is controlled. According to the epitaxial growth method of the heterojunction bipolar transistor, the transient effect in the heterojunction bipolar transistor can be improved, the hydrogen ion concentration in the base layer is reduced, the crystallinity of the base layer material is improved, the recombination current in the base layer is reduced, and the current gain variation degree of the heterojunction bipolar transistor is less than 5%.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a heterojunction bipolar transistor and an epitaxial growth method thereof. Background technique [0002] With the rapid development of science and technology, the communication between people and the transmission of data have changed from the original wired transmission to wireless transmission. The wireless communication system is a booming field in the current communication technology. Group III / V compound semiconductors just meet the needs of power amplifiers due to their advantages such as high power, high linearity (linear), high breakdown voltage, and low power dissipation. Heterojunction bipolar transistors (HBT) have The advantages of high frequency and high efficiency are widely used in smart phones and tablet computers. [0003] However, the current gain of the current heterojunction bipolar transistor is related to the electron injection current fro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/02H01L29/737
CPCH01L21/02694H01L21/02697H01L29/737
Inventor 杨翠柏
Owner 深圳市中科光芯半导体科技有限公司
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