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190results about How to "Improve high frequency characteristics" patented technology

Sine DC frequency conversion multi-split air conditioner control system and its control method

The present invention discloses a sine DC variable frequency one-driving-multiple air conditioner control system, comprising an outdoor unit controller, at least three indoor units and a DC variable frequency compressor, wherein, the outdoor unit controller further controls an outdoor unit intelligent control module, an intelligent frequency conversion module, an indoor-outdoor unit communication module and a temperature acquisition module; the outdoor unit intelligent control module is used for controlling the drive of the DC variable frequency compressor. The present invention also discloses a sine DC variable frequency one-driving-multiple air conditioner control method, which first calculates the needed frequency of the DC variable frequency compressor, and then calculates the instantaneous position and the velocity information of a DC variable frequency compressor rotor, and finally drives the DC variable frequency compressor. The present invention increases the service efficiency of the compressors of one-driving-multiple air conditioners, improves the high frequency characteristics and low frequency characteristics of air conditioners, and ensures that one-driving-multiple air conditioners save more energy.
Owner:HAIER GRP CORP +1

Nickel-zinc ferrite material for wireless signal sensing, sheet core and preparation method thereof

The invention relates to a nickel-zinc ferrite material for wireless signal sensing, a sheet core and a preparation method thereof. The nickel-zinc ferrite material comprises main components which are calculated by the following oxides in mole percent: 48.0-62.5mol% of Fe2O3, 15.3-25.5mol% of NiO, 18.5-23.5mol% of ZnO and 3-10mol% of CuO; and the nickel-zinc ferrite material additionally comprises auxiliary components which are calculated by the following standard substances in weight percent relative to the total weight of the main components: 0.05-0.10wt% of nano CaCO3, 0.30-0.85wt% of nano SiO2, 1.50-2.50wt% of Mn3O4, 0.05-0.35wt% of Co2O3 and 1.00-1.50wt% of Bi2O3. The nickel-zinc ferrite material is prepared by adopting an oxidation method. The sheet core is a reticular sheet, the length is 45-250mm, the width is 45-250mm, the thickness is 0.05-0.3mm, the sheet core is formed by small sheets in a connecting way, the gaps among the small sheets are less than 50mum, and the sheet core is directly molded and then is sintered, or a magnetic bar is molded and then is sliced into small sheets which form the sheet core through an SMT (surface mount device) technology. At frequency of 13.56MHz, the material has the electromagnetic performance that mu' is equal to 125 plus or minus 20% and the mu'' is less than or equal to 4. Therefore, the material can satisfy the requirement of high-frequency low consumption on the ferrite material for wireless signal sensing.
Owner:TDG HLDG CO LTD

Manufacturing method of superconductor cavity

The invention belongs to the technical field of particle accelerators and particularly relates to manufacture of a radio frequency superconductor cavity. A manufacturing method of the superconductor cavity mainly comprises the following steps: (1) using superconductor materials as raw materials, (2) utilizing CAD software to generate a superconductor cavity model, and adopting layering software to layer the superconductor cavity model, (3) using an atmosphere control system to provide argon for a forming chamber, (4) laying powder of superconductor materials in the step (1) on a forming table of the forming chamber, (5) using a scanning control system to print laser energy onto a powder layer according to the description of a software model of a superconductor cavity slicing layer so as to generate a superconductor material slicing layer entity. The entity is a part of the superconductor cavity. A next slicing layer is processed continually on the first slicing layer entity until the whole superconductor cavity processing process is finished. Finally, mechanical polishing, chemical washing, high-temperature annealing, high-pressure super-pure water washing and super-clean chamber assembly are conducted. The method shortens the development cycle of the superconductor cavity, improves the finished product rate of the development of the superconductor cavity due to the fact that the whole superconductor cavity is free of welding joints, is free of restriction of stamping forming conditions and capable of improving the performance of the superconductor cavity, and reduces product cost due to the fact that surplus superconductor material powder can be used repeatedly.
Owner:INST OF MODERN PHYSICS CHINESE ACADEMY OF SCI

AlGan polarized ultraviolet photoelectric detector and manufacturing method thereof

The invention discloses an AlGan material-based ultraviolet photoelectric detector structure and a manufacturing method thereof, which are mainly used for solving the problem of the dependence on a P-type doping material in the prior art. A detector comprises a substrate (1), a transition layer (2), a GaN buffer layer (3), an aluminum component gradual change AlGaN layer (4) and an active layer (5) from bottom to top, wherein the aluminum component gradual change AlGaN layer (4) is partitioned into an upper layer and a lower layer; the thickness of the lower layer is 20-30 nanometers, and thecontent of an aluminum component increases from 0 percent to 80-100 percent; the thickness of the upper layer is 10-20 nanometer, and the content of the aluminum component is 0-80 percent; the left upper side of the aluminum component gradual change AlGaN layer (4) is covered by the active layer (5); a bottom ohmic contact (7) is deposited on the right upper side of the aluminum component gradualchange AlGaN layer (4); a gap (8) is formed between the ohmic contact and the active region; the active region (5) consists of an AlGaN material with the aluminum component content of 0-80 percent; the thickness of the active region (5) is 50-100 nanometers; and a surface ohmic contact electrode (7) is deposited on the surface of the active region. The detector structure has the advantages of capability of automatically working in a photovoltaic mode, high high-frequency characteristic and small dark current, and can be applied to optical signal detection in ultraviolet wavebands between 226 nanometers and 363 nanometers.
Owner:陕西半导体先导技术中心有限公司

Broadband online measurement sensor for DC extra-high voltage corona current

ActiveCN102662097AReduce coronaImprove high-frequency measurement performanceCurrent/voltage measurementVoltage dividersCapacitanceLow voltage
The invention relates to a broadband online measurement sensor for DC extra-high voltage corona current, which comprises an isolation electrode unit, a signal processing unit and a system power supply unit, wherein the isolation electrode unit comprises an insulated isolation sleeve, a hollow tubular long arm low-voltage electrode and a hollow tubular short arm high-voltage electrode, wherein two ends of the insulated isolation sleeve are respectively in security isolation connection with the high-voltage electrode and the low-voltage electrode in a special way; the signal processing unit consists of a sampling resistor module, a signal acquisition module, a signal conversion module and a signal transmission module; the system power supply unit comprises a storage battery pack and a charging module; and the signal processing unit and the system power supply unit are arranged in the isolation electrode unit, so that the high-accuracy integral measurement sensor can be formed. The broadband online measurement sensor solves the problems of shielding disturbance of a strong electric field between an acquired signal and an acquisition channel as well as surrounding stray capacitance, and realizes the broadband domain online measurement and the multi-point network online measurement of the DC extra-high voltage corona current.
Owner:CHINA ELECTRIC POWER RES INST +2

Silicon photonic optical transceiver module

The invention discloses a silicon photonic optical transceiver module. The silicon photonic optical transceiver module comprises a circuit board and an optical component; the circuit board is arrangedin a hollow region, and the hollow region is used for accommodating the optical component; the circuit board is provided with a plurality of first bonding pads along the periphery of the hollow region; a plurality of second bonding pads are arranged at the edge of the optical component; and after the optical component and the circuit board are attached in a reverse mounting mode, the second bonding pads are attached to the corresponding first bonding pads so as to implement electrical connection. The electrical connection is established between the circuit board and the optical component by the first bonding pads and the second bonding pads, an electric signal connection path is short, a stray capacitance is small, high-frequency transmission loss is low, high-frequency characteristics are improved, and the problem of high-frequency inhibition caused by a gold-wire bonding wire currently can be effectively improved. Meanwhile, the optical component and the circuit board are attached in a reverse buckling mode, the design structure is compact, and the size of the silicon photonic optical transceiver module can be effectively reduced.
Owner:GUANGXUN SCI & TECH WUHAN

A two-step method for manufacturing pedt cathode chip tantalum electrolytic capacitors

ActiveCN102270535AED reductionEDT reductionCapacitor electrodesElectrolysisSurface oxidation
The invention discloses a method for manufacturing a polymer ethylenedioxythiophene (PEDT) cathode plate type tantalum electrolytic capacitor by a two-step method. The cathode plate type tantalum electrolytic capacitor is manufactured by adopting the two-step method. The two-step method is a method which comprises the following steps of: impregnating an oxidizing agent at the first time, impregnating a monomer at the second time, and polymerizing the oxidizing agent and the monomer to prepare PEDT so as to manufacture the cathode plate type tantalum electrolysis capacitor, wherein the whole process is performed under normal temperature. The manufacturing method comprises the following steps of: A, adding a certain amount of adhesive agent into tantalum powder, and stamping and molding themixture, sintering the treated mixture at high temperature to volatilize the adhesive agent and effectively adhere the tantalum powder so as to form a multi-hole tantalum anode plate, and applying direct-current voltage in acidic solution, so that the surface of the tantalum powder is oxidized to generate an amorphous dielectric layer Ta2O5; B, repeatedly immersing the anode plate with the dielectric layer in the oxidizing agent and monomer solution for reaction so as to form a conducting polymer PEDT layer with a certain thickness, namely a cathode; and C, immersing the anode block with the PEDT layer in graphite and silver slurry respectively, curing respectively at high temperature, and performing assembly, plastic package, aging test and labeling to package a capacitor product.
Owner:ZHUZHOU HONGDA ELECTRONICS

Vibration diaphragm and preparation method thereof

The invention relates to vibration diaphragm and a preparation method thereof. The vibration diaphragm comprises a base layer which is thin film made of any one material of polyetherimide, polyethylene glycol terephthalate, polyetheretherketone, polyphenylene sulfide and polyurethane; and a strengthened layer which is formed by drying and curing a mixture of graphene, graphite powder and glue, wherein the weight ratio of the graphene, graphite powder and glue in the strengthened layer is (1-2):(5-10):(9994-9988), and the strengthened layer is adhered on the surface of the base layer. The preparation method comprises the steps of providing the thin film, glue, graphite powder and graphene, evenly mixing the graphite powder and the graphene to form a first mixture, mixing the first mixture in the glue, evenly mixing to form a second mixture; and evenly coating the second mixture on the surface of the thin film and carrying out drying, thereby curing the second mixture on the surface of the thin film to obtain the final vibration diaphragm. According to the vibration diaphragm and the preparation method, the adhesion of the vibration diaphragm is high, the resonant frequency f <0> is reduced, the high frequency sound pressure is increased, and the high and low frequency characteristics are completed.
Owner:CHANGZHOU AMT

Fabrication method of field-effect transistor and field-effect transistor fabricated by employing fabrication method

The invention discloses a method for fabricating a field-effect transistor by employing an electric fluid direct-writing process. The method comprises the following steps of (1) fabricating an organic semiconductor thin film on a substrate; (2) fabricating linear fibers in parallel on the substrate with the semiconductor thin film by using the electric fluid direct-writing process; (3) fabricating parallel dielectric fibers perpendicular to the linear fibers by electric fluid direct writing; (4) vacuum-depositing metal on the substrate; and (5) applying conductive sliver paste onto the two ends of the dielectric fibers, and leading out a grid electrode. The invention also discloses a corresponding product. According to the method, a transistor channel is obtained by means of the dielectric micro-nano fibers, the length side of the channel is equivalent to the diameter sizes of the fibers and can reach sub-micron even nanoscale, and meanwhile, the fibers are also an insulation layer of the transistor; and moreover, through one-time metal vacuum deposition, a source, a drain and a grid of the field-effect transistor can be simultaneously formed. By the method, the fabrication process step of the transistor is greatly simplified, and meanwhile, the fabrication cost is reduced.
Owner:HUAZHONG UNIV OF SCI & TECH

Electrostatic shielding effect transistor and design method thereof

The invention discloses an electrostatic shielding effect transistor. The electrostatic shielding effect transistor comprise a collector, groove-type grids, a base region, an oxidization layer, a polycrystalline silicon layer and emitters. The collector comprises a leading-out end, an N+ substrate, an N+ conductive material layer and an N- conductive material layer. The groove-type grids are arranged on the N- conductive material layer, B ions of certain concentration are injected into the bottom of a groove to serve as P+ regions, and the base region injected with the B ions is arranged between the grids. The oxidization layer is arranged on the grids and the base region, the emitters are formed on the base region and the oxidization layer, the polycrystalline silicon layer is deposited on the oxidization layer and the polycrystalline silicon layer forms an emitting region below the emitters after high-temperature diffusion. The electrostatic shielding effect transistor is provided with the emitters and the base region which are super shallow in junction and small in size, and therefore, the emitter current crowding effect and the base region flow extruding effect of the device can be greatly improved. Due to the super small junction depth of the structure and the base region of the device, the hole extraction speed is increased and the high frequency property of the device is improved.
Owner:SHENZHEN SHENGYUAN SEMICON

Edge coupling photoelectric device packaging structure and preparation method thereof

The invention belongs to the field of photoelectric devices and relates to an edge coupling photoelectric device packaging structure. The edge coupling photoelectric device packaging structure comprises an optical chip, an optical coupling structure block and a transparent resin protection structure block; the edge coupling structure is arranged on the optical chip; the optical coupling structureblock abuts against the side coupling structure; a through hole used for fixing an optical fiber is formed in the optical coupling structure block; the transparent resin protection structure block isarranged between the optical chip and the optical coupling structure block and is used for covering the coupling surface of the optical chip so as to ensure normal light transmission; and the opticalchip, the coupling structure block and the transparent protection resin are all located in a packaging layer. In the use process of the edge coupling photoelectric device packaging structure, it justneeds to directly insert the optical fiber into the through hole so as to be fixed, so that high-precision alignment between the optical fiber and the optical chip can be achieved. The edge couplingphotoelectric device packaging structure has the advantages of passive alignment, simple structure, high precision and easiness in assembling process and mass production.
Owner:NAT CENT FOR ADVANCED PACKAGING
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