Schottky diode and manufacturing method thereof

A technology of Schottky diodes and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of easy breakdown of Schottky diodes and high conduction voltage, and reduce recovery time and parasitic Capacitance, reduced forward voltage, and improved high-frequency characteristics

Inactive Publication Date: 2013-05-08
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of easy breakdown of Schottky diodes and high conduction voltage in the prior art

Method used

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  • Schottky diode and manufacturing method thereof
  • Schottky diode and manufacturing method thereof
  • Schottky diode and manufacturing method thereof

Examples

Experimental program
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Embodiment 1

[0043] figure 2 It is a schematic diagram of the structure of the Schottky diode of the embodiment of the present invention. It can be seen from the figure that the Schottky diode of this embodiment includes N-the first semiconductor layer 3, the first metal electrode 1 formed on the back of the first semiconductor layer 3, and the metal The electrode is preferably a Ti / Ni / Ag multilayer metal, and the electrode 1 is used as the negative electrode of the Schottky diode, and is formed in the first trench 4 and the second trench 5 separated from each other in the first semiconductor layer 3, and the depth of the trench is It is preferably 2um to 7um, and the depth of the groove in this embodiment is 3um; the width of the groove is preferably 5um to 30um, and the width of the groove in this implementation is 30um, and the corners of the groove are arranged in an arc shape, which is beneficial to improve the reverse impact. breakdown voltage, the insulating layer 10 and the fillin...

Embodiment 2

[0045] image 3It is a schematic diagram of the structure of the Schottky diode of the embodiment of the present invention. It can be seen from the figure that the Schottky diode of this embodiment includes, N+ second semiconductor layer 2, the first metal electrode 1 formed on the back of the second semiconductor layer 2, and the metal electrode It is preferably Ti / Ni / Ag, and the electrode 1 is used as the negative electrode of the Schottky diode, formed on the first semiconductor layer 3 above the second semiconductor layer, and formed in the first grooves 4 separated from each other in the first semiconductor layer 3 And the second groove 5, the depth of the groove is preferably 2um to 7um, and the present embodiment is 3um; the width of the groove is preferably 5um to 30um, and the groove width of this embodiment is 30um, and the corners of the groove are arranged as arcs shape, which is beneficial to improve the reverse breakdown voltage, the insulating layer 10 and the f...

Embodiment 3

[0047] The manufacturing method of embodiment one Schottky diode of the present invention comprises the following steps:

[0048] Step one, such as Figure 4 As shown, an N-semiconductor first semiconductor layer 3 is selected, and an oxide layer 8 is formed on the first semiconductor layer 3. The oxide layer 8 is silicon dioxide, and its thickness is preferably 200nm to 500nm. In this embodiment, 300nm is selected.

[0049] Step two, such as Figure 5 As shown, a photoresist layer 11 is formed on the oxide layer 8 .

[0050] Step three, such as Image 6 As shown, the trench window is defined, and the first trench 4 and the second trench 5 separated from each other are formed in the first semiconductor layer 3. In this embodiment, plasma etching or reactive ion etching is used in the defined window Etch to form a groove, the depth of the groove is preferably 2um to 7um, and this embodiment is 3um; the width of the groove is preferably 5um to 30um, the groove width of this e...

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Abstract

The invention relates to a semi-conductor device, in particular to a novel channel schottky rectifier tube. The rectifier tube comprises a first semi-conductor layer, a first metal electrode arranged below the first semi-conductor layer, a first channel, a second channel, isolation layers, a barrier metal layer, an oxide layer, and a second metal electrode, wherein the first channel and the second channel are arranged in the first semi-conductor layer and are mutually separated, the isolation layers are located in the channels, the barrier metal layer is arranged above the first semi-conductor layer and between the first channel and the second channel, the oxide layer is arranged above the first semi-conductor layer outside the barrier metal layer, and the second metal electrode is arranged above the first semi-conductor layer. The depths of the channels are 2um-7um. By means of arrangement of the channels, reverse breakdown voltage of a schottky diode is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a Schottky diode. Background technique [0002] Schottky diode is a majority carrier device that works by using the contact barrier between metal and semiconductor. Compared with ordinary PN junction diodes, it has excellent characteristics such as low forward conduction voltage and fast response speed. Schottky diodes are used as rectification and freewheeling components in high-frequency rectification, switching circuits and protection circuits, which can greatly reduce power consumption, improve circuit efficiency and frequency of use, and reduce circuit noise. With the vigorous development of power electronics technology, the excellent performance of Schottky diodes such as high frequency and low power consumption will win broad development prospects for it. [0003] A Schottky diode is a silicon epitaxial wafer composed of a heavily doped silicon substrate and a lightly doped ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L21/329
Inventor 张兴来李春霞陈朝伟曾爱平陈宇
Owner BYD CO LTD
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