Schottky diode

Abstract

The invention belongs to the technical field of rectifying devices, in particular to a Schottky diode. According to the invention, an arc-shaped groove is used for increasing the revere performance of the device. Compared with the traditional product, the Schottky diode has the advantages of being capable of tolerating higher reverse voltage, having lower leakage currents before puncturing and a high forward and reverse current ratio; meanwhile, the driving capability of forward currents is hardly lost.

Description

technical field

[0001] The invention belongs to the technical field of rectifier devices, and in particular relates to a Schottky diode, in particular to a Schottky diode with larger reverse breakdown voltage and smaller reverse leakage current. Background technique

[0002] Schottky diodes are a branch of diodes, generally made of metal or metal-like compounds in contact with semiconductors. Due to the discontinuity of the energy band at the interface, the injected carriers have excess energy, so this structure is also called a hot carrier diode or a hot electron diode. Like other types of diodes, the basic characteristic of a Schottky diode is that it exhibits a very low resistance when operating in the forward direction and a high resistance when operating in the reverse direction.

[0003] The earliest application of this device can be traced back to the 19th century. In 1874 Braun discovered that there is an asymmetry in the conductivity between copper and iron sulfid...

Examples

Embodiment Construction

[0036] In order to make the features and advantages of the present invention more comprehensible, reference is made herein to Figure 4 A preferred example is described in detail as follows. However, the present invention should not be limited to implementation using the methods in the examples described below.

[0037] Figure 4 A cross-sectional structure diagram of the RC-TMBS designed according to the idea of ​​the present invention is shown. The entire device is 5.6 μm wide and contains the following material layers from bottom to top:

[0038] The cathode 501 made of the first metal (Al in this example) has a thickness of 300 nm.

[0039] Heavy doping of the first conductivity type (in this case N-type) (in this case 1×10 20 cm -3 ) semiconductor (silicon Si in this example) 502 with a thickness of 300 μm.

[0040] Lightly doped (1×10 in this case) of the first conductivity type (N-type in this case) 16 cm -3 ) semiconductor (in this case, silicon Si) 503, plat...

technical field

[0001] The invention belongs to the technical field of rectifier devices, and in particular relates to a Schottky diode, in particular to a Schottky diode with larger reverse breakdown voltage and smaller reverse leakage current. Background technique

[0002] Schottky diodes are a branch of diodes, generally made of metal or metal-like compounds in contact with semiconductors. Due to the discontinuity of the energy band at the interface, the injected carriers have excess energy, so this structure is also called a hot carrier diode or a hot electron diode. Like other types of diodes, the basic characteristic of a Schottky diode is that it exhibits a very low resistance when operating in the forward direction and a high resistance when operating in the reverse direction.

[0003] The earliest application of this device can be traced back to the 19th century. In 1874 Braun discovered that there is an asymmetry in the conductivity between copper and iron sulfid...

Examples

Embodiment Construction

[0036] In order to make the features and advantages of the present invention more comprehensible, reference is made herein to Figure 4 A preferred example is described in detail as follows. However, the present invention should not be limited to implementation using the methods in the examples described below.

[0037] Figure 4 A cross-sectional structure diagram of the RC-TMBS designed according to the idea of ​​the present invention is shown. The entire device is 5.6 μm wide and contains the following material layers from bottom to top:

[0038] The cathode 501 made of the first metal (Al in this example) has a thickness of 300 nm.

[0039] Heavy doping of the first conductivity type (in this case N-type) (in this case 1×10 20 cm -3 ) semiconductor (silicon Si in this example) 502 with a thickness of 300 μm.

[0040] Lightly doped (1×10 in this case) of the first conductivity type (N-type in this case) 16 cm -3 ) semiconductor (in this case, silicon Si) 503, plat...

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