298results about How to "Improve reverse breakdown voltage" patented technology

A trench Schottky barrier rectifier includes an cathode electrode at a face of a semiconductor substrate and an multiple epitaxial structure in drift region which in combination provide high blocking voltage capability with low reverse-biased leakage current and low forward voltage. The multiple structure of the drift region contains a concentration of first conductivity dopants therein which comprises two or three different uniform value from a Schottky rectifying junction formed between the anode electrode and the drift region. The thickness of the insulating region (e.g., SiO2) in the MOS-filled trenches is greater than 1000 Å to simultaneously inhibit field crowing and increase the breakdown voltage of the device. The multiple epi structure is preferably formed by epitaxial growth from the cathode region and doped in-situ.

An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a plurality of guard rings in the EPI layer and a plurality of oxidized slots. Finally, the diode includes metal within the plurality of slots to form a Buried Power Buss. A portion of the metal is completely oxide isolated from the other elements of the diode. In a second aspect, a method for manufacturing a Schottky diode comprises providing a substrate region, A buried N+ region providing an epitaxial (EPI) layer. The method also includes providing a plurality of guard rings in the EPI layer and providing a plurality of slots in the semiconductor substrate that is in contact with the EPI layer and the substrate region. The method further includes a plurality of oxidizing the slots and providing metal within the plurality of slots to form a Buried Power Buss structure. A portion of the metal is completely oxide isolated from the other elements of the diode. Accordingly, the system and method in accordance with the present invention a Schottky diode is provided that has low forward drop, low leakage at low and high voltages, and has a high reverse breakdown voltage.

The invention relates to GaN light-emitting diodes with a low-temperature p-type GaN layer. The main difference between the structure of the GaN light-emitting diodes of the invention and the structure of the existing GaN light-emitting diodes is that a low-temperature p-type GaN layer grows between an InGaN/GaN multiple-quantum well active light-emitting layer and a p-type AlGaN electron blocking layer, thereby physically separating the InGaN/GaN multiple-quantum well active light-emitting layer from the p-type AlGaN electron blocking layer on an interface. Results show that the luminous intensity and reverse breakdown voltage of the GaN light-emitting diodes are greatly improved.

The present invention introduces a diode circuit which achieves ideal diode characteristics which observe an enough reverse breakdown voltage, and whose forward voltage is nearly 0 V. An active diode has an anode terminal and a cathode terminal. The active diode includes a transistor which has a gate terminal, a drain terminal connected to one of the anode terminal and the cathode terminal, and a source terminal connected to the other one of the anode terminal or the cathode terminal; and a gate voltage generating circuit which delivers a gate voltage to the gate terminal, the gate voltage being adjusted to be equal to a threshold voltage of the transistor.

The invention discloses a high-breakdown-voltage Schottky diode and a making method. The high-breakdown-voltage Schottky diode comprises a substrate (5), a Ga2O3 epitaxial layer (3), a low-doped n-type Ga2O3 film (4) and a passivation layer (8) from bottom to top. A ring metal cathode (1) and a circular metal anode (2) are arranged in the passivation layer (8). The ring center of the ring metal cathode and the circular center of the circular metal anode are at the same point. A silicon ion implanted region (7) is arranged under the ring metal cathode (1). Multiple H+ implanted regions (6) for adjusting the concentration of electrons are arranged between the Ga2O3 epitaxial layer (3) and the low-doped n-type Ga2O3 film (4), wherein the first H+ implanted region is close to the edge of a Schottky contact, and the distance of the last H+ implanted region from the edge of the inner ring of the metal cathode is greater than 1 micron. Through attraction of H+ to electrons, the concentration of electrons at the edge of the Schottky contact is reduced, and the reverse breakdown voltage of the Schottky diode is improved.

The invention discloses a Schottky diode and a preparation method thereof. The Schottky diode comprises a gallium oxide substrate, a gallium oxide epitaxial layer on the gallium oxide substrate, a plurality of P-type material structures, a first electrode and a second electrode; a plurality of trenches are formed in the side, away from the gallium oxide substrate, of the gallium oxide epitaxial layer; the plurality of p-type material structures are located in the plurality of trenches; he first electrode covers the p-type material structures and the gallium oxide epitaxial layer; and the second electrode is located on the side, away from the gallium oxide epitaxial layer, of gallium oxide substrate. A heterogeneous PN junction structure is formed between the p-type material structures andthe gallium oxide epitaxial layer, thereby solving the problems of high technical difficulty and high cost accompanying with the manufacturing of high-performance Schottky diodes as the gallium oxidematerials are difficult to form p-type doping materials; and meanwhile, the manufactured Schotty diode has relatively low turn-on voltage at high voltage and high current, and has relatively high reverse breakdown voltage, thereby improving the working stability of the Schottky diode.

The invention discloses a hetetrostructure field effect diode and a manufacturing method thereof. The hetetrostructure field effect diode comprises a substrate as well as an insulation high-resistance semiconductor and a wide bandgap hetetrostructure barrier layer which are sequentially arranged on the substrate, wherein the insulation high-resistance semiconductor and the wide bandgap hetetrostructure barrier layer form a two-dimensional electron gas hetetrostructure epitaxial layer, an isolated table board is formed at the top of the insulation high-resistance semiconductor and the wide bandgap hetetrostructure barrier layer, an insulating medium layer is formed on the isolated table board, a cathode electrode and an anode electrode which are contacted with the wide bandgap hetetrostructure barrier layer are respectively formed on the insulating medium layer, wherein one part of the anode electrode is arranged on the wide bandgap hetetrostructure barrier layer, the other part of the anode electrode is arranged on the insulating medium layer to form a diode anode provided with a Schottky-MIS (metal-insulator-semiconductor) dual-structure electrode, and the anode electrode is made from a low-work function metal. According to the invention, the characteristics of low forward on voltage, low reverse leakage current and high reverse blocking voltage can be realized, thus, the method in the invention is applicable to manufacturing of a power type GaN-base hetetrostructure field effect diode.

The invention discloses a Schottky diode and a method of formation of the Schottky diode. The method of formation of the Schottky diode comprises the following steps: providing a semiconductor substrate and forming a plurality of grooves inside the semiconductor substrate; obliquely injecting P type ions into the semiconductor substrate, and forming first P type doped regions inside the semiconductor substrate close to a surface of the semiconductor substrate, sidewalls of the grooves and a bottom surface; fully filling the grooves with polycrystalline silicon material; inversely forming N type doped regions inside the semiconductor substrate close to the surface and the polycrystalline silicon material; and forming Schottky metal layers on the surface of the semiconductor substrate and the surface of the polycrystalline silicon material. For the spacing between two first P type doped regions of adjacent grooves is less than the spacing between the adjacent grooves, the semiconductor substrate between the two first P type doped regions of the adjacent grooves in the Schottky diode can be cut off by a depletion region more easily when an inverse voltage is applied to two ends of the Schottky diode, so that the inverse breakdown voltage of the Schottky diode can be increased.

A diode device and manufacturing method thereof are provided. The diode device includes a substrate, an epitaxial layer, a trench gate structure, a Schottky diode structure and a termination structure. An active region and a termination region are defined in the epitaxial layer. The Schottky diode structure and the trench gate structure are located in the active region and the termination structure is located in the termination region. The termination structure includes a termination trench formed in the epitaxial layer, a termination insulating layer, a first spacer, a second spacer and a first doped region. The termination insulating layer is conformingly formed on inner walls of the termination trench. The first and second spacers are disposed on two sidewalls of the termination trench. The first doped region formed beneath the termination trench has a conductive type reverse to that of the epitaxial layer.

The invention discloses a device structure of a metallic oxide field effect transistor and a manufacturing method thereof. The device structure comprises a substrate (1), a Ga2O3 epitaxial layer (2) and low-doped n-type Ga2O3 thin film (3) from bottom to top, the thin film is provided with a high-doped n-type ion-implanted region (4) and an insulated gate medium (7), the ion-implanted region is provided with a source electrode (5) and a drain electrode (6), the insulated gate medium is provided with a gate electrode (8), the Ga2O3 epitaxial layer is provided with multiple hydrogen-ion-implanted regions (9), the hydrogen-ion-implanted regions are located in the epitaxial layer between the gate electrode and the drain electrode, and meanwhile with the distance increase of the hydrogen-ion-implanted regions and the gate electrode, the widths of the hydrogen-ion-implanted regions are reduced, and intervals among the hydrogen-ion-implanted regions are increased. According to the device structure of the metallic oxide field effect transistor and the manufacturing method thereof, an electric field is adjusted through attraction of hydrogen ions to electrons, a breakdown voltage of a device is improved, and the device structure can be used as a power device and a high voltage switch device.

The invention relates to a Ga2O3-material-based U-shaped grating type MOSFET and a preparation method thereof. The method comprises steps: selecting a beta-Ga2O3 substrate; growing a homogeneous epitaxial layer on the surface of the beta-Ga2O3 substrate and carrying out ion implantation on the surface of the homogeneous epitaxial layer to form an N type doped region; carrying out treatment on the surface of the N type doped region by using an ion implantation process to form a P type well region; carrying out treatment on the surface of the P type well region by using an etching process to form a U-shaped groove in the beta-Ga2O3 substrate; preparing a gate dielectric layer and a gate electrode in the U-shaped groove; and preparing a source electrode on the upper surface, different from the P type well region, of the beta-Ga2O3 substrate and manufacturing a drain electrode on the lower surface of the beta-Ga2O3 substrate, thereby forming a U-shaped grating type MOSFET. According to the Ga2O3-material-based U-shaped grating type MOSFET provided by the invention, with the U-shaped grate electrode structure, a high on-resistance defect of the MOSFET power device is overcome; and the Ga2O3 material is applied to the substrate and the homogeneous epitaxial layer of the U-shaped grating structure, so that the voltage-withstanding capability and the reverse breakdown voltage of the MOSFET power device are improved; and the on resistance is reduced and the performance and device reliability of the power device are improved substantially.

The invention discloses a reverse blocking type IGBT and a manufacturing method therefor, and belongs to the technical field of a semiconductor power device. By introducing trench emitter and trench collector structures, the reverse breakdown voltage of a device is improved without influencing the threshold voltage and switch-on of an IGBT device; the overall gate capacitance is lowered, the switching speed of the device is improved, the switching loss and driving power consumption of the device are lowered, and the compromising relation between forward switch-on voltage drop and switch-off loss of the conventional CSTBT structure is improved; the problems of current, voltage oscillation and EMI in the device starting dynamic process can be avoided, and device reliability is improved; theelectric field concentration effect at the bottom of the trench is improved, the forward breakdown voltage of the device is improved, and reliability of the device is further improved; and the currentcarrier enhancement effect at the emitter end of the device is further improved, the current carrier concentration distribution in a drift region can be improved, and compromising between forward switch-on voltage drop and switch-off loss can be further improved. The manufacturing method disclosed in the invention is compatible with the existing manufacturing process of a CSTBT device.

The invention belongs to the technical field of semiconductor power electronic devices, and particularly discloses a GaN-based power diode and a preparation method thereof. The GaN-based power diode comprises a GaN substrate, a GaN epitaxial layer, first metal structures and a second metal structure, wherein the GaN substrate has first doping concentration; the GaN epitaxial layer is located on the GaN substrate and has second doping concentration; the second doping concentration is smaller than the first doping concentration; the first metal structures are distributed on the GaN epitaxial layer or in the GaN epitaxial layer at predetermined intervals; the second metal structure is formed on the first metal structures and the GaN epitaxial layer; the first metal structures and the GaN epitaxial layer form high barrier schottky contact; and the second metal structure and the GaN epitaxial layer form low barrier schottky contact. The GaN-based power diode has good reliability and relatively high reverse breakdown voltage when P-type doping on a GaN material is omitted.

The invention discloses a manufacturing method for a groove type super junction. The method comprise the following steps: 1, a wafer, on which a first conductive type epitaxial layer forms, is provided; 2, a groove formation area is defined through adoption of a photoetching process, and the top width of the groove positioned at the middle area of the wafer is made to be larger than the top width of each groove at the edge area; 3, etching is carried out on the first conductive type epitaxial layer to form the grooves; and 4, second conductive type epitaxial layers formed through a same doped technology condition are filled in the grooves in epitaxial growth. According to the invention, the uniformity of a reverse breakdown voltage inside the surface of the super junction device of the same wafer can be raised; under a condition that the relatively high uniformity of a reverse breakdown voltage inside the surface of the super junction device of the same wafer is ensured, the reverse breakdown voltage of the super junction device is raised.

The invention belongs to the technical field of rectifying devices, in particular to a Schottky diode. According to the invention, an arc-shaped groove is used for increasing the revere performance of the device. Compared with the traditional product, the Schottky diode has the advantages of being capable of tolerating higher reverse voltage, having lower leakage currents before puncturing and a high forward and reverse current ratio; meanwhile, the driving capability of forward currents is hardly lost.

The invention provides a semiconductor device and a production method thereof and relates to the field of semiconductor technology. The semiconductor device comprises a substrate, a first semiconductor layer, a second semiconductor layer, an ohmic electrode and a metal electrode. The metal electrode comprises an electrode channel and electrode side wings, wherein through the specific design of theelectrode side wing structure, two-dimensional electronic body width is further expanded, and field distribution is modulated. Through the semiconductor device, the problem that a semiconductor device structure has large electric leakage under reversed bias voltage can be solved, and the reverse breakdown voltage of the semiconductor device is further increased.

The present invention relates to the field of semiconductor technology, particularly to a super-junction schottky diode. According to the present invention, the effective area of schottky junction is increased by forming the schottky junction in the trench located in the body of the device. Therefore, the current capacity of this novel schottky diode can be greatly improved. In addition, a super-junction structure is used to improve the device's reverse breakdown voltage and reduce the reverse leakage current. The super-junction schottky diode provided in the present invention can achieve a larger forward current, a lower on-resistance and a better reverse breakdown characteristic.

The invention provides a layout method of a SiC JBS device, which comprises the following steps of: growing an epitaxial layer on the crystal surface of a silicon carbide substrate, and dividing an active region with a rectangular structure on the epitaxial layer, arranging a terminal protection region at the periphery of the active region, arranging a plurality of P-type regions in the active region, arranging the plurality of P-type regions in a multi-row and multi-column staggered manner, implanting ions into each P-type region, and arranging Schottky contact regions between the P-type regions, and depositing an ohmic contact metal layer on the back surface of the silicon carbide substrate to generate the SiC JBS device. The plurality of P-type regions are arranged in the SiC JBS devicein a multi-row and multi-column staggered manner, so that the reverse breakdown characteristic of the SiC JBS device is ensured, the Schottky barrier region area is increased, and the conduction capability is improved.