4 results about "Indium gallium nitride" patented technology

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN / AlGaN multiple quantum wells (MQWs) and AlyGa1-yN / AlxGa1-xN (y<x) MQWs. The InGaN / AlGaN MQWs and AlyGa1-yN / AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

The application discloses a flexible brain-computer interface composite device and a preparation method thereof. The flexible brain-computer interface composite device comprises a flexible substrate, a bottom electrode layer, a functional film layer and a top electrode layer which are arranged in a stack; the functional film layer comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are arranged in a stack from the bottom electrode layer to the top electrode layer; one of the first epitaxial layer and the second epitaxial layer is an n-type doped semiconductor material, and the other is a p-type doped semiconductor material; and the material of the light-emitting layer is indium gallium nitride. The application can combine the functions of collecting brain electrical signals, emitting light stimulation signals and providing energy for the device into the same device structure, so that the volume of the brain-computer interface device can be reduced and the integration degree can be improved.

In a general aspect, a light-emitting diode (LED) includes a plurality of indium-gallium-nitride (InGaN) quantum wells (QWs). The plurality of InGaN QWs include respective light-emitting indium-containing layers having an indium concentration of less than 30%. The LED further includes a plurality of quantum barriers respectively disposed between the plurality of InGaN QWs. The plurality of quantum barriers include respective aluminum-containing layers. The LED, during electrical operation, is configured to emit light at a peak wavelength greater than 610 nanometers (nm) at a current density greater than or equal to 1 amp-per-centimeter-squared (A / cm2).

This disclosure relates to a resistor for use in III-V semiconductor devices. The resistor includes a first current-carrying level, a second current-carrying level, and a vertical interconnect resistor coupling the first and second current-carrying levels. The vertical interconnect resistor includes a doped conductive layer, comprising one of indium gallium nitride (InGaN) and doped polysilicon. The first and second current levels may include multiple current-level islands that can be coupled in a lateral serpentine and vertical serpentine manner to control the length and resistance value of the resistor. This resistor can be used with III-V semiconductor devices and occupies less area space than current resistors.