30 results about "Indium gallium nitride" patented technology

A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire- n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as in lateral integration designs. Electrical modulation of 5 orders, and an order of magnitude of optical modulation are achieved in the device.

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN / AlGaN multiple quantum wells (MQWs) and AlyGa1-yN / AlxGa1-xN (y<x) MQWs. The InGaN / AlGaN MQWs and AlyGa1-yN / AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal.

A method for manufacturing a semiconductor optical electrode, said method including: a step for forming n-type gallium nitride 12 on a substrate 11; a step for forming indium gallium nitride 13 on the n-type gallium nitride 12; and a step for forming p-type nickel oxide 14 on the indium gallium nitride 13. In the step for forming the p-type nickel oxide, nickel oxide is sputtered in an atmosphere in which oxygen is mixed with a sputtering gas.

The present disclosure discloses a light-emitting diode epitaxial wafer for improving reliability and a preparation method thereof, belonging to the field of light-emitting diode fabrication. The p-type composite contact layer on the p-type GaN layer includes a first aluminum gallium nitride sublayer, a second aluminum gallium nitride sublayer, a third aluminum indium gallium nitride sublayer, a fourth aluminum indium gallium nitride sublayer, and a fifth indium gallium nitride sublayer that are sequentially stacked. The p-type composite contact layer with a relatively large thickness and several potential barrier changes avoids the occurrence of current breakdown. It can also make the carriers more evenly distributed in the P electrode region, effectively reduce the poor antistatic ability caused by uneven carrier distribution, and improve the reliability of the light-emitting diode light-emitting device. The doping concentrations of Mg in the first aluminum gallium nitride sublayer, the second aluminum gallium nitride sublayer, the third aluminum indium gallium nitride sublayer, the fourth aluminum indium gallium nitride sublayer, and the fifth indium gallium nitride sublayer increase in sequence, which may reduce the resistance, lower the working voltage, and reduce the probability of current breakdown, thereby improving the reliability of the light-emitting diode.

The proposed solution relates to a semiconductor device (30) comprising an epiwafer (10) and wherein a plurality of InGaN platelets (100), each InGaN platelet being monolithically grown on the epiwafer and configured with a top c-plane surface. An upper mask layer (200) is provided with mask apertures (220) over the InGaN platelets, wherein said mask apertures have a width which is smaller than said top c-plane surface. A plurality of microLED structures (240) comprising quantum well, QW, layers (242), are grown on the top c-plane surface in one of said mask apertures. The solution further relates to a microLED device (500) comprising the semiconductor device, and a method for fabricating the semiconductor device.

The application provides a monolithic integrated micron LED chip, comprising a substrate and a plurality of micron LED devices, the micron LED device comprising an n-gallium nitride layer, an indium gallium nitride / gallium nitride multiple quantum well structure, a p-aluminum gallium nitride layer, a p-gallium nitride layer, a current diffusion layer and a passivation layer, the quantum barrier thickness is 0.5-5 nm, the monolithic integrated micron LED chip can be used for light detection through a high-voltage bias circuit, the high-voltage bias circuit provides a reverse bias voltage of 0-200 V and a bandwidth of 10 MHz-10 GHz; the monolithic integrated micron LED chip can be used for light emission and has a bandwidth of 10 MHz-10 GHz. The monolithic integrated micron LED chip has good photoelectric response characteristics and bandwidth characteristics under an extremely high reverse bias voltage. The application also provides an application of the monolithic integrated micron LED chip as a narrowband photoelectric detector and an application in high-speed visible light communication, and a visible light communication device.

Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal.

A method of manufacturing a substrate, comprising the steps of: providing a stack comprising an initial substrate, a gallium nitride layer, a doped indium gallium nitride layer (13), and an unintentionally doped indium gallium nitride layer (14); transferring the doped indium gallium nitride layer (13) and the unintentionally doped indium gallium nitride layer (14) to an anodization support (21) to form a second stack (20); immersing the second stack (20) and a counter electrode in an electrolyte solution and applying a voltage or a current between the doped indium gallium nitride layer (13) and the counter electrode to porous the doped indium gallium nitride layer (13) and to relax the unintentionally doped indium gallium nitride layer (14); transferring the doped indium gallium nitride layer (13) and the unintentionally doped indium gallium nitride layer (14) to a support of interest; and forming an indium gallium nitride layer by epitaxy on the unintentionally doped indium gallium nitride layer to obtain a relaxed epitaxially grown indium gallium nitride layer.

The application discloses an indium gallium nitride quantum well optomechanical microcavity accelerometer with quantum limited stark effect, and a beam laser diode takes a silicon-based nitride epitaxial wafer as a carrier and comprises a silicon substrate layer, an aluminum nitride buffer layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, a p-type electrode arranged on the p-type gallium nitride layer and an n-type electrode arranged at the edge of the n-type gallium nitride layer. The nitride material on the silicon substrate is prepared by using a photoetching and ICP etching process to realize LD light emission of a micro-beam stress sensitive area. After power-on, laser LD is obtained at the stress sensitive area of the beam. Under the power-on condition, the frequency wavelength of the laser changes before and after acceleration load due to the quantum limited stark effect, and the acceleration size can be perceived through the difference frequency.

The invention discloses an epitaxial structure for improving luminous efficiency and a preparation method of the epitaxial structure. The epitaxial structure comprises a substrate, an N-type semiconductor layer, a first current expansion layer, an active layer, a second current expansion layer and a P-type semiconductor layer which are sequentially stacked from bottom to top, the first current expansion layer is an InGaN (indium gallium nitride)-GaN (gallium nitride)-AlGaN (gallium nitride) composite layer, and two-dimensional electron gas is generated on a heterogeneous interface by the InGaN / GaN and the GaN / AlGaN; the second current expansion layer is an InGaN-GaN-AlGaN composite layer with an In component and an Al component gradually changed, and through the arrangement of a double-layer InGaN-GaN-AlGaN current expansion layer structure, electron leakage is reduced, hole injection is increased, carrier transportation is balanced, and the luminous efficiency of the device is improved.

The present invention provides an indium gallium nitride (InGaN) layer having a substantially relaxed region, and a device fabricated on the InGaN layer. [Solution] An InGaN layer is disclosed, characterized in that its in-plane lattice constant is in the range of 3.19 Å to 3.50 Å. The InGaN layer is grown by accreting InGaN grown on multiple GaN seed regions. This InGaN layer can be used to fabricate optical and electronic devices for use as light sources in lighting and display applications.

A light emitting device including an N-polar semiconductor nanowire region having a first doping type. An indium gallium nitride / gallium nitride (InGaN / GaN) N-polar short period superlattice (SPSL) region of each nanowire, having a fist doping type, can be disposed on the N-polar semiconductor region. An indium gallium nitride (InGaN) N-polar single-segment (SS) active region of each nanowire can be disposed on the InGaN / GaN N-polar short period superlattice (SPSL) region opposite the N-polar semiconductor region. A tunnel junction region of each nanowire, having a second doping type, can be disposed on the InGaN N-polar single-segment (SS) active region opposite the InGaN / GaN N-polar short period superlattice (SPSL) region.

The application discloses a flexible brain-computer interface composite device and a preparation method thereof. The flexible brain-computer interface composite device comprises a flexible substrate, a bottom electrode layer, a functional film layer and a top electrode layer which are arranged in a stack; the functional film layer comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are arranged in a stack from the bottom electrode layer to the top electrode layer; one of the first epitaxial layer and the second epitaxial layer is an n-type doped semiconductor material, and the other is a p-type doped semiconductor material; and the material of the light-emitting layer is indium gallium nitride. The application can combine the functions of collecting brain electrical signals, emitting light stimulation signals and providing energy for the device into the same device structure, so that the volume of the brain-computer interface device can be reduced and the integration degree can be improved.

A method of forming an LED emitter includes: providing a III-nitride layer on a substrate (310), the III-nitride layer having a planar top surface; providing discrete lateral growth regions on the top surface; selectively epitaxially growing, on each discrete lateral growth region, a base region (1210) comprising an In(x)Ga(1-x)N material, each extending perpendicular to the top surface; providing surfaces of the In(x)Ga(1-x)N material on portions of the base regions (1210), the surfaces having a relaxed strain and being characterized by a base lattice constant within 0.1% of its bulk relaxed value; and epitaxially growing LED regions on the surfaces, the LED regions including light-emitting layers of In(y)Ga(1-y)N material that are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material, and characterized by an active region (1240) lattice constant within 0.1% of the base lattice constant, wherein 0.05<x<0.2 and y>0.3.

A vertical-cavity surface-emitting laser (VCSEL) includes a first reflector structure; a second reflector structure; and an active region arranged between the first reflector structure and the second reflector structure. The active region comprises a multi-quantum-well (MQW) structure; a spacer arranged above the MQW structure; an electron blocking layer arranged above the spacer layer; and a p-type structure doped with p-type dopants, the p-type structure arranged above the electron blocking layer and between the first reflector structure and the electron blocking layer. The spacer and / or the p-type structure comprises Indium Gallium Nitride (InGaN).

A red-light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region comprises: a light-emitting indium gallium nitride layer which emits light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and a III-nitride barrier layer located on the III-nitride layer, and the light emitting diode comprises a porous region of III-nitride material. A red mini LED, a red micro-LED, an array of micro-LEDs, and a method of manufacturing a red LED are also provided.

The application discloses an indium gallium nitride quantum well optomechanical microcavity accelerometer based on quantum limited Stark effect, a beam laser diode takes a silicon-based nitride epitaxial wafer as a carrier, and comprises a silicon substrate layer, an aluminum nitride layer, a u-shaped gallium nitride layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, a p-type electrode arranged on the p-type gallium nitride layer and an n-type electrode arranged at the edge of the n-type gallium nitride layer. The nitride material on the silicon substrate utilizes a photoetching and ICP etching process to prepare a micro-beam stress sensitive area LD light emitting, and laser LD is obtained at the stress sensitive area of the beam after electrification. Under the electrification condition, the frequency wavelength of the laser changes before and after acceleration load due to the quantum limited Stark effect, and the acceleration size can be perceived through the difference frequency.

A method for manufacturing a semiconductor photoelectrode, said method including: a step for forming n-type gallium nitride 12 on a substrate 11; a step for forming indium gallium nitride 13 on the n-type gallium nitride 12; and a step for forming p-type nickel oxide 14 on the indium gallium nitride 13.

A method for achieving voltage-controlled gate-modulated light emission using monolithic integration of fin- and nanowire- n-i-n vertical FETs with bottom-tunnel junction planar InGaN LEDs is described. This method takes advantage of the improved performance of bottom-tunnel junction LEDs over their top-tunnel junction counterparts, while allowing for strong gate control on a low-cross-sectional area fin or wire without sacrificing LED active area as in lateral integration designs. Electrical modulation of 5 orders, and an order of magnitude of optical modulation are achieved in the device.

A beam laser diode takes a silicon-based nitride epitaxial wafer as a carrier and comprises a silicon substrate layer, an aluminum nitride buffer layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, the p-type electrode is arranged on the p-type gallium nitride layer, and the n-type electrode is arranged on the edge of the n-type gallium nitride layer. A nitride material on a silicon substrate is used for preparing a micro-beam stress sensitive area LD by utilizing photoetching and ICP (Inductively Coupled Plasma) etching processes for emitting light, and after electrification, the laser LD is obtained in the stress sensitive area of the beam. Under the power-on condition, before and after acceleration loading, due to the fact that quantum limits the stark effect, the frequency wavelength of laser changes, and the magnitude of the acceleration can be sensed through difference frequency.

In a general aspect, a light-emitting diode (LED) includes a plurality of indium-gallium-nitride (InGaN) quantum wells (QWs). The plurality of InGaN QWs include respective light-emitting indium-containing layers having an indium concentration of less than 30%. The LED further includes a plurality of quantum barriers respectively disposed between the plurality of InGaN QWs. The plurality of quantum barriers include respective aluminum-containing layers. The LED, during electrical operation, is configured to emit light at a peak wavelength greater than 610 nanometers (nm) at a current density greater than or equal to 1 amp-per-centimeter-squared (A / cm2).

Methods and apparatus for processing a photonic device are provided herein. For example, methods include etching, using a plasma etch process that uses a first gas, a first epitaxial layer of material of the photonic device comprising a base layer comprising at least one of silicon, germanium, sapphire, aluminum indium gallium arsenide (AlxInyGa1-x-yAs), aluminum indium gallium phosphide (AlxInyGa1-x-yP), aluminum indium gallium nitride (AlxInyGa1-x-yN), aluminum indium gallium arsenide phosphide (AlxInyGa1-x-yAszP1-z), depositing, using a plasma deposition process that uses a second gas different from the first gas, a first dielectric layer over etched sidewalls of the first epitaxial layer of material, etching, using the first gas, a second epitaxial layer of material of the photonic device, and depositing, using the second gas, a second dielectric layer over etched sidewalls of the second epitaxial layer of material.

The invention discloses a high electron mobility transistor and a manufacturing method thereof, and the high electron mobility transistor comprises an aluminum gallium nitride layer disposed on a gallium nitride substrate, a silicon oxide layer disposed on the aluminum gallium nitride layer, and a semiconductor layer disposed on the silicon oxide layer. Wherein the silicon oxide layer is provided with an opening which exposes the aluminum gallium nitride layer, a fluorine doped region is formed in the aluminum gallium nitride layer and the gallium nitride substrate under the opening, an indium gallium nitride layer is positioned on the silicon oxide layer, fills the opening and is directly contacted with the fluorine doped region, and an insulating layer is positioned on the top surface of the indium gallium nitride layer. A metal layer is located on the top face of the insulating layer, the metal layer, the insulating layer and the indium gallium nitride layer form a grid pattern, a grid is located on the metal layer, and a source electrode and a drain electrode are located on the gallium nitride substrate on the two sides of the grid respectively.

The application discloses a quantum limited Stark effect indium gallium nitride frequency difference accelerometer, a beam laser diode takes a silicon base nitride epitaxial sheet as a carrier, and comprises a silicon substrate layer, an aluminum nitride buffer layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, a p-type electrode arranged on the p-type gallium nitride layer and an n-type electrode arranged at the edge of the n-type gallium nitride layer. The nitride material on the silicon substrate utilizes a photoetching and ICP etching process to prepare a micro beam stress sensitive area LD light emission, and laser LD is obtained at the stress sensitive area of the beam after electrification. Under the electrification condition, the frequency wavelength of the laser will change due to the quantum limited Stark effect before and after acceleration load, and the size of the acceleration can be perceived through the frequency difference.

This disclosure relates to a resistor for use in III-V semiconductor devices. The resistor includes a first current-carrying level, a second current-carrying level, and a vertical interconnect resistor coupling the first and second current-carrying levels. The vertical interconnect resistor includes a doped conductive layer, comprising one of indium gallium nitride (InGaN) and doped polysilicon. The first and second current levels may include multiple current-level islands that can be coupled in a lateral serpentine and vertical serpentine manner to control the length and resistance value of the resistor. This resistor can be used with III-V semiconductor devices and occupies less area space than current resistors.

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer, and a GaN barrier layer located on the aluminum gallium nitride layer.