10 results about "Indium gallium nitride" patented technology

Disclosed is a system and method for solid-state 2D optical phased arrays (OPAs), which are fabricated from InGaN / AlGaN multiple quantum wells (MQWs) and AlyGa1-yN / AlxGa1-xN (y<x) MQWs. The InGaN / AlGaN MQWs and AlyGa1-yN / AlxGa1-xN (y<x) MQWs include alternating p-type and n-type layers to form p-n-p-n MQW structures to allow the OPA to operate in the reversed biased configuration to further minimize the operating current and heat generation. The phase in each pixel within the OPA will be controlled independently via electro-optic effect in III-nitride MQWs by varying the voltage in each pixel by a Si CMOS array to achieve the manipulation of the distribution of optical power in the far field and steering of the main laser beam. The present disclosure is applicable to a wide range of applications, including the operation of LIDAR systems, laser weapons, laser illuminators, and laser imaging systems.

The application discloses an indium gallium nitride quantum well optomechanical microcavity accelerometer with quantum limited stark effect, and a beam laser diode takes a silicon-based nitride epitaxial wafer as a carrier and comprises a silicon substrate layer, an aluminum nitride buffer layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, a p-type electrode arranged on the p-type gallium nitride layer and an n-type electrode arranged at the edge of the n-type gallium nitride layer. The nitride material on the silicon substrate is prepared by using a photoetching and ICP etching process to realize LD light emission of a micro-beam stress sensitive area. After power-on, laser LD is obtained at the stress sensitive area of the beam. Under the power-on condition, the frequency wavelength of the laser changes before and after acceleration load due to the quantum limited stark effect, and the acceleration size can be perceived through the difference frequency.

The present invention provides an indium gallium nitride (InGaN) layer having a substantially relaxed region, and a device fabricated on the InGaN layer. [Solution] An InGaN layer is disclosed, characterized in that its in-plane lattice constant is in the range of 3.19 Å to 3.50 Å. The InGaN layer is grown by accreting InGaN grown on multiple GaN seed regions. This InGaN layer can be used to fabricate optical and electronic devices for use as light sources in lighting and display applications.

The application discloses a flexible brain-computer interface composite device and a preparation method thereof. The flexible brain-computer interface composite device comprises a flexible substrate, a bottom electrode layer, a functional film layer and a top electrode layer which are arranged in a stack; the functional film layer comprises a first epitaxial layer, a light-emitting layer and a second epitaxial layer which are arranged in a stack from the bottom electrode layer to the top electrode layer; one of the first epitaxial layer and the second epitaxial layer is an n-type doped semiconductor material, and the other is a p-type doped semiconductor material; and the material of the light-emitting layer is indium gallium nitride. The application can combine the functions of collecting brain electrical signals, emitting light stimulation signals and providing energy for the device into the same device structure, so that the volume of the brain-computer interface device can be reduced and the integration degree can be improved.

A method of forming an LED emitter includes: providing a III-nitride layer on a substrate (310), the III-nitride layer having a planar top surface; providing discrete lateral growth regions on the top surface; selectively epitaxially growing, on each discrete lateral growth region, a base region (1210) comprising an In(x)Ga(1-x)N material, each extending perpendicular to the top surface; providing surfaces of the In(x)Ga(1-x)N material on portions of the base regions (1210), the surfaces having a relaxed strain and being characterized by a base lattice constant within 0.1% of its bulk relaxed value; and epitaxially growing LED regions on the surfaces, the LED regions including light-emitting layers of In(y)Ga(1-y)N material that are pseudomorphic with the surfaces of the In(x)Ga(1-x)N material, and characterized by an active region (1240) lattice constant within 0.1% of the base lattice constant, wherein 0.05<x<0.2 and y>0.3.

A red-light emitting diode (LED) comprises: an n-doped portion; a p-doped portion; and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region comprises: a light-emitting indium gallium nitride layer which emits light at a peak wavelength between 600 and 750 nm under electrical bias thereacross; a III-nitride layer located on the light-emitting indium gallium nitride layer; and a III-nitride barrier layer located on the III-nitride layer, and the light emitting diode comprises a porous region of III-nitride material. A red mini LED, a red micro-LED, an array of micro-LEDs, and a method of manufacturing a red LED are also provided.

In a general aspect, a light-emitting diode (LED) includes a plurality of indium-gallium-nitride (InGaN) quantum wells (QWs). The plurality of InGaN QWs include respective light-emitting indium-containing layers having an indium concentration of less than 30%. The LED further includes a plurality of quantum barriers respectively disposed between the plurality of InGaN QWs. The plurality of quantum barriers include respective aluminum-containing layers. The LED, during electrical operation, is configured to emit light at a peak wavelength greater than 610 nanometers (nm) at a current density greater than or equal to 1 amp-per-centimeter-squared (A / cm2).

The application discloses a quantum limited Stark effect indium gallium nitride frequency difference accelerometer, a beam laser diode takes a silicon base nitride epitaxial sheet as a carrier, and comprises a silicon substrate layer, an aluminum nitride buffer layer, an n-type gallium nitride layer, a quantum well layer, a p-type gallium nitride layer and a SiO2 layer which are sequentially arranged from bottom to top, a p-type electrode arranged on the p-type gallium nitride layer and an n-type electrode arranged at the edge of the n-type gallium nitride layer. The nitride material on the silicon substrate utilizes a photoetching and ICP etching process to prepare a micro beam stress sensitive area LD light emission, and laser LD is obtained at the stress sensitive area of the beam after electrification. Under the electrification condition, the frequency wavelength of the laser will change due to the quantum limited Stark effect before and after acceleration load, and the size of the acceleration can be perceived through the frequency difference.

This disclosure relates to a resistor for use in III-V semiconductor devices. The resistor includes a first current-carrying level, a second current-carrying level, and a vertical interconnect resistor coupling the first and second current-carrying levels. The vertical interconnect resistor includes a doped conductive layer, comprising one of indium gallium nitride (InGaN) and doped polysilicon. The first and second current levels may include multiple current-level islands that can be coupled in a lateral serpentine and vertical serpentine manner to control the length and resistance value of the resistor. This resistor can be used with III-V semiconductor devices and occupies less area space than current resistors.

A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer, and a GaN barrier layer located on the aluminum gallium nitride layer.