230 results about "Indium gallium nitride" patented technology

A high-power and high-efficiency light emitting device with emission wavelength (λ_peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a continuous layer of semiconductor material having a relaxed lattice structure.

Si-doped porous GaN is fabricated by UV-enhanced Pt-assisted electrochemical etching and together with a low-temperature grown buffer layer are utilized as the template for InGaN growth. The porous network in GaN shows nanostructures formed on the surface. Subsequent growth of InGaN shows that it is relaxed on these nanostructures as the area on which the growth takes place is very small. The strain relaxation favors higher indium incorporation. Besides, this porous network creates a relatively rough surface of GaN to modify the surface energy which can enhance the nucleation of impinging indium atoms thereby increasing indium incorporation. It shifts the luminescence from 445 nm for a conventionally grown InGaN structure to 575 nm and enhances the intensity by more than two-fold for the growth technique in the present invention under the same growth conditions. There is also a spectral broadening of the output extending from 480 nm to 720 nm.

An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.

Methods of fabricating semiconductor devices or structures include bonding a layer of semiconductor material to another material at a temperature, and subsequently changing the temperature of the layer of semiconductor material. The another material may be selected to exhibit a coefficient of thermal expansion such that, as the temperature of the layer of semiconductor material is changed, a controlled and/or selected lattice parameter is imparted to or retained in the layer of semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a layer of semiconductor material having an average lattice parameter at room temperature proximate an average lattice parameter of the layer of semiconductor material previously attained at an elevated temperature.

The invention discloses an LED (Light Emitting Diode) epitaxial structure with a P (Positive) type superlattice and a preparation method thereof. The epitaxial structure comprises a substrate, wherein a GaN (Gallium Nitride) buffer layer, an undoped GaN layer, an n (negative) type GaN layer, a multi-quantum well luminous layer, a first P type GaN layer, a P type AlGaN (Aluminium Gallium Nitride) electronic blocking layer and a second P type GaN layer are sequentially arranged on the substrate from bottom to top, and the P type superlattice formed by a PInGaN (P type Indium Gallium Nitride) potential well layer and a PAlGaN potential barrier layer in a periodic interactive overlapping way is arranged between the P type AlGaN electronic blocking layer and the second P type GaN layer. The PInGaN potential well layer in the P type superlattice generates and constrains a great number of holes for the formation of a two-dimensional hole high-density state; the PAlGaN potential barrier layer hinders the escape of the holes; in such a way, the transverse spreading of the holes is improved, the electron overflow can be prevented, the hole injection efficiency is increased and the electron and hole recombination probability is improved; and therefore, the brightness of a chip can be improved by 5-10%.

One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.

The invention relates to a gallium nitride based light-emitting diode, in particular to a high-power gallium nitride based light-emitting diode structure; the high-power gallium nitride based light-emitting diode comprises a substrate, an N-type gallium nitride layer arranged on the substrate, a AlGaN cavity barrier layer arranged on a high table top of the N-type gallium nitride layer, an asymmetrical multiple quantum well active layer arranged on the cavity barrier layer, a P-type gallium nitride layer arranged on the asymmetrical multiple quantum well active layer, a P+-InGaN conducting layer arranged on the P-type gallium nitride layer, and an indium titanium oxide electrode layer which is arranged on the P+-InGaN conducting layer from bottom to top; a silicon dioxide passivation layer is arranged on the top surface of the whole light-emitting diode and the side surface connected to the high and low table tops, an N electrode is arranged on the lower table top of the N-type gallium nitride layer, and a P-electrode is arranged in the middle of the indium titanium oxide electrode layer. The light-emitting diode structure can improve the injection efficiency of the cavity and improve the photoelectric conversion efficiency.

A light-emitting diode is built on a silicon substrate doped with a p-type impurity to possess sufficient conductivity to provide a current path. The p-type silicon substrate has epitaxially grown thereon two superposed buffer layers of aluminum nitride and n-type indium gallium nitride. Further grown epitaxially on the buffer layers is the main semiconductor region of the LED which comprises a lower confining layer of n-type gallium nitride, an active layer for generating light, and an upper confining layer of p-type gallium nitride. In the course of the growth of the main semiconductor region there occurs a thermal diffusion of aluminum, gallium and indium from the buffer layers into the p-type silicon substrate, with the consequent creation of an alloy layer of the diffused metals. Representing p-type impurities in the p-type silicon substrate, these metals do not create a pn junction in the substrate which causes a forward voltage drop.

The invention relates to a water-soluble cutting liquid used for processing hard brittle materials. The components of the invention by weight percentage are as follows: 70 to 100 percent of polyalkoxylated compound, 0 to 15 percent of extreme pressure resistant chelation anti-settling agent, 0 to 15 percent of dissolution promoter . The cutting liquid of the invention has the advantages of no pollution, low metal impurity content, high cutting sheet rate, and high finished product qualification rate and so on. The invention also relates to the application of the cutting liquid in the processing of monocrystalline silicon, polysilicon, germanium, gallium arsenide, quartz, Indium gallium nitride or precious stones.

Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity.

The invention discloses a green light emitting diode and a manufacturing method thereof. The green light emitting diode is characterized in that a low-temperature protective layer is introduced during epitaxial growth of an InGaN (Indium Gallium Nitride)/GaN (Gallium Nitride) quantum well; the quantum well structure changes from InGaN/GaN to an InGan/Gan low-temperature protective layer 1/GaN structure; thereby protecting In in the InGaN/GaN, and avoiding damage to the In in high-temperature growth, and thus effectively avoiding phase separation of an In component in the InGaN, and improving the internal quantum efficiency; and in addition, two different stress relieving layers are located between an n-type layer and a green light emitting layer, and thus the stress of the green light emitting diode is decreased.

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the technical field of semiconductors. The epitaxial wafer includes a substrate, a buffer layer, an undoped GaN layer, an N-type GaN layer, a second electron blocking layer, a multiple quantum well layer, a first electron blocking layer, and a P-type GaN layer. The electron blocking layer includes a plurality of first sub-layers and a plurality of second sub-layers that are alternately stacked. Each first sub-layer is an undoped indium gallium nitride layer, a second sub-layer of theplurality of second sub-layers closest to the multiple quantum well layer is a first aluminum gallium nitride layer, the first aluminum gallium nitride layer is an undoped aluminum gallium nitride layer, and each second sub-layer among the second sub-layers except the second sub-layer closest to the multiple quantum well layer is a second aluminum gallium nitride layer, the second aluminum gallium nitride layer is a P-type doped aluminum gallium nitride layer, and the doping concentration of a P-type dopant in each second aluminum gallium nitride layer is smaller than the doping concentrationof a P-type dopant in the GaN layer. The luminous efficiency can be improved.

A solar cell and method of fabricating the same are provided. The solar cell includes a metal electrode layer, an optical absorption layer, a buffer layer, and a transparent electrode layer. The metal electrode layer is disposed on a substrate. The optical absorption layer is disposed on the metal electrode layer. The buffer layer is disposed on the optical absorption layer and includes an indium gallium nitride (In_xGa_1-xN). The transparent electrode layer is disposed on the buffer layer.

An epitaxial structure for GaN-based LEDs to achieve better reverse withstanding voltage and anti-ESD capability is provided herein. The epitaxial structure has an additional anti-ESD thin layer as the topmost layer, which is made of undoped indium-gallium-nitrides (InGaN) or low-band-gap (Eg<3.4 eV), undoped aluminum-indium-gallium-nitrides (AlInGaN). The anti-ESD thin layer could also have a superlattice structure formed by interleaving at least an undoped InGaN thin layer and at least a low-band-gap, undoped AlInGaN thin layer. This anti-ESD thin layer greatly improves the GaN-based LEDs' reverse withstanding voltage and resistivity to ESD, which in turn extends the GaN-based LEDs' operation life significantly.

The invention is concerned with a setting method of structure to multi-junction solar battery in type of InGaN p-n. It takes current-pressure equation, relation formula between InxGa1-xN energy gap and In composing and correlative parameters of InxGa1-xN of solar battery in type of InGaN p-n to count the largest transition efficiency of InGaN multi-junction (solo-junction) solar battery and the best energy gap of junction material to get the said transition efficiency and corresponding value of In composing. Take InxGa1-xN with those different In composing as junction material and connect them with tunnel kink in series. Set metal conduct pole on the first junction n (or p)-Inx1Ga1-x1N and the last I junction p (or n)-InxiGa1-xiN, and cover film to reduce reflection on incidence surface.

New high-performance, highly tunable photophosphors are presented. These photophosphor's pump spectra and emission spectra are both manipulated via variances in the formulation of compounds taught herein. In addition, new combinations of semiconductor devices in conjunction with these optically active materials are described. In particular, light emitting semiconductors fashioned as diodes from indium gallium nitride construction are combined with these photophosphors. High-energy short wavelength light mixes with the longer wavelengths light emitted by the halogen-silicate photophosphor to produce a broad spectrum perceived by human observers as “white light”.

Disclosed is a light-emitting diode (LED) epitaxial wafer. The LED epitaxial wafer sequentially comprises a substrate, a gallium nitride (GaN) buffering layer, a non-dopant GaN layer, a doped N type GaN layer with silicon (Si), an indium gallium nitride (InGaN)/GaN multiple quantum well layer, a P type aluminum gallium nitride (AlGaN) layer and a P type doped GaN layer with magnesium (Mg), wherein the doped GaN layer with Si comprises a first doped N type GaN layer with Si, a second doped N type GaN layer with Si and at least one alternate structure layer composed of a third doped N type GaN layer with Si and an undoped U type GaN layer with no Si. According to the alternate structure layer composed of the third doped N type GaN layer with Si and the undoped U type GaN layer with no Si, usage amount of dopant is reduced, a driving voltage is reduced, and luminance and a lighting effect are improved.