Electrostatic shielding effect transistor and design method thereof

Abstract

The invention discloses an electrostatic shielding effect transistor. The electrostatic shielding effect transistor comprise a collector, groove-type grids, a base region, an oxidization layer, a polycrystalline silicon layer and emitters. The collector comprises a leading-out end, an N+ substrate, an N+ conductive material layer and an N- conductive material layer. The groove-type grids are arranged on the N- conductive material layer, B ions of certain concentration are injected into the bottom of a groove to serve as P+ regions, and the base region injected with the B ions is arranged between the grids. The oxidization layer is arranged on the grids and the base region, the emitters are formed on the base region and the oxidization layer, the polycrystalline silicon layer is deposited on the oxidization layer and the polycrystalline silicon layer forms an emitting region below the emitters after high-temperature diffusion. The electrostatic shielding effect transistor is provided with the emitters and the base region which are super shallow in junction and small in size, and therefore, the emitter current crowding effect and the base region flow extruding effect of the device can be greatly improved. Due to the super small junction depth of the structure and the base region of the device, the hole extraction speed is increased and the high frequency property of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor components and relates to an electrostatic shielding effect transistor and a design method thereof. Background technique [0002] Power devices are the core devices of the modern power electronics industry. Semiconductor new energy technology and national energy saving and consumption reduction policies are inseparable from the support of power devices, such as MOSFETs and IGBTs developed based on MOSFETs. As a new type of power device, transistors are becoming more and more popular. However, it is difficult for transistors to solve the problems of high frequency, high voltage, and high current; and it is difficult for them to have some advantages of MOS and BJT at the same time. Slow, poor secondary breakdown pressure resistance, poor thermal stability, impact resistance and high-frequency radiation resistance need to be improved. [0003] Therefore, it is necessary to conduct research to ...

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Problems solved by technology

As a new type of power device, transistors are becoming more and more popular. However, it is difficult for transistors to solve the problems of high frequency, high voltage, and high current; and it is difficult for them to have some advantages of MOS and BJT at the same time. Slow, poor secondary breakdown pressure resistance, poor thermal stability, impact resistance and high-frequency radiation resistance need to be improved

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