Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Capacitor structure

A capacitor structure and electrode technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problem of insufficient noise attenuation characteristics, achieve high noise suppression effect, and improve high-frequency characteristics

Inactive Publication Date: 2008-10-01
コラボイノベーションズインコーポレイテッド
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the above-mentioned conventional capacitor structure, since the capacitance is formed not on the main wiring of the electrode, but on the teeth of the comb-shaped electrode, the gap between the main wiring of the electrodes contains an inductance component or resistance. Element
Therefore, for example, when used as a bypass capacitor to remove noise between two electrodes, the noise attenuation characteristics may not be sufficient for high frequency bands.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitor structure
  • Capacitor structure
  • Capacitor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0027] figure 1 It is a plan view showing the structure of a capacitor formed on an integrated circuit on a semiconductor substrate according to Embodiment 1 of the present invention. figure 1 Among them, 11 and 21 are the first and second electrode wirings formed on the upper wiring layer as the first wiring layer. A first electrode 16 is formed on the first electrode wiring 11 . The first electrode 16 has a plurality of ( figure 1 5 in the middle) tooth portion 15. A second electrode 26 is formed on the second electrode wiring 21 . The second electrode 26 has a plurality of ( figure 1 5 in the middle) tooth portion 25. The first electrode 16 and the second electrode 26 face each other in a state where the tooth portions 15 and 25 are meshed with each other via a dielectric. That is, the first electrodes 16 and the second electrodes 26 have a so-called interdigitated arrangement.

[0028] Further, the tip of each tooth portion 15 of the first electrode 16 is electrical...

Embodiment approach 2

[0035] figure 2 It is a plan view showing a structure of a capacitor formed on an integrated circuit on a semiconductor substrate according to Embodiment 2 of the present invention. figure 2 The shown capacitor structure is to figure 1 In the shown capacitor structure of Embodiment 1, the comb-shaped electrodes are replaced by scroll-shaped electrodes.

[0036] figure 2 Among them, 31, 41 are the first and second electrode wirings formed on the upper wiring layer as the first wiring layer. A first electrode 36 is formed on the first electrode wiring 31 . The first electrode 36 has a scroll portion 35 extending from the first electrode wiring 31 . A second electrode 46 is formed on the second electrode wiring 41 . The second electrode 46 has a scroll portion 45 extending from the second electrode wiring 41 . The first electrode 36 and the second electrode 46 face each other in a state in which the scroll portions 35 , 45 are intertwined with each other via a dielectric...

Embodiment approach 3

[0044] image 3 It is a plan view showing a capacitor structure formed on an integrated circuit on a semiconductor substrate according to Embodiment 3 of the present invention, in which (a) shows a planar structure of an upper wiring layer, and (b) shows a planar structure of a lower wiring layer. and also, Figure 4 yes image 3 The cross-sectional view of the line A-A'.

[0045] image 3 and Figure 4 The capacitor structure with figure 1 The capacitor structure is the basic configuration, and furthermore, a capacitor is formed by opposing electrodes in the lower wiring layer and between the upper and lower wiring layers.

[0046] Such as image 3 As shown, a first electrode 16 and a second electrode 26 are formed on the upper wiring layer. The first electrode 16 has a plurality of teeth 15 protruding from the electrode base 14 of the first electrode wiring 11 in a comb shape, and the second electrode 26 has a plurality of teeth protruding from the electrode base 24 o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The capacitor structure includes a first electrode having a plurality of teeth protruding in a comb shape from an electrode base of a first electrode line and a second electrode having a plurality of teeth protruding in a comb shape from an electrode base of a second electrode line, both formed in a first wiring layer. The first and second electrodes face each other with their teeth interdigitated with each other via a dielectric. At least one of the teeth of the first electrode is electrically connected with a third electrode line formed in a second wiring layer.

Description

technical field [0001] The present invention relates to capacitor structures formed on integrated circuits on semiconductor substrates. Background technique [0002] As a conventional example of a capacitor structure on an integrated circuit formed on a semiconductor substrate, there is a so-called interdigitattion configuration in which a pair of counter electrodes formed The teeth are arranged in such a way that they mesh with each other. According to this capacitor structure, the tooth portions each form a capacitance between each other. That is, the surface area of ​​the counter electrode can be increased, and a capacitor having a large capacity can be obtained with the same area as compared with a simple parallel plate capacitor (for example, refer to Patent Document 1). [0003] Patent Document 1: JP-A-4-268756 (page 3, figure 1 ) [0004] However, in the above-mentioned conventional capacitor structure, since the capacitance is formed not on the main wiring of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L23/522
Inventor 冈本圣美杉冈徹郎足立一树
Owner コラボイノベーションズインコーポレイテッド
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products