Capacitor structure

A capacitor structure and electrode technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., can solve the problem of insufficient noise attenuation characteristics, achieve high noise suppression effect, and improve high-frequency characteristics

Inactive Publication Date: 2008-10-01
コラボイノベーションズインコーポレイテッド
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the above-mentioned conventional capacitor structure, since the capacitance is formed not on the main wiring of the electrode, but on the teeth of the comb-shaped electrode, the gap between the main wiring of the electrodes contains an inductance component or resistance. Element
Therefore, for example, when used as a bypass capacitor to remove noise between two electrodes, the noise attenuation characteristics may not be sufficient for high frequency bands.

Method used

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Examples

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Embodiment approach 1

[0027] figure 1 It is a plan view showing the structure of a capacitor formed on an integrated circuit on a semiconductor substrate according to Embodiment 1 of the present invention. figure 1 Among them, 11 and 21 are the first and second electrode wirings formed on the upper wiring layer as the first wiring layer. A first electrode 16 is formed on the first electrode wiring 11 . The first electrode 16 has a plurality of ( figure 1 5 in the middle) tooth portion 15. A second electrode 26 is formed on the second electrode wiring 21 . The second electrode 26 has a plurality of ( figure 1 5 in the middle) tooth portion 25. The first electrode 16 and the second electrode 26 face each other in a state where the tooth portions 15 and 25 are meshed with each other via a dielectric. That is, the first electrodes 16 and the second electrodes 26 have a so-called interdigitated arrangement.

[0028] Further, the tip of each tooth portion 15 of the first electrode 16 is electrical...

Embodiment approach 2

[0035] figure 2 It is a plan view showing a structure of a capacitor formed on an integrated circuit on a semiconductor substrate according to Embodiment 2 of the present invention. figure 2 The shown capacitor structure is to figure 1 In the shown capacitor structure of Embodiment 1, the comb-shaped electrodes are replaced by scroll-shaped electrodes.

[0036] figure 2 Among them, 31, 41 are the first and second electrode wirings formed on the upper wiring layer as the first wiring layer. A first electrode 36 is formed on the first electrode wiring 31 . The first electrode 36 has a scroll portion 35 extending from the first electrode wiring 31 . A second electrode 46 is formed on the second electrode wiring 41 . The second electrode 46 has a scroll portion 45 extending from the second electrode wiring 41 . The first electrode 36 and the second electrode 46 face each other in a state in which the scroll portions 35 , 45 are intertwined with each other via a dielectric...

Embodiment approach 3

[0044] image 3 It is a plan view showing a capacitor structure formed on an integrated circuit on a semiconductor substrate according to Embodiment 3 of the present invention, in which (a) shows a planar structure of an upper wiring layer, and (b) shows a planar structure of a lower wiring layer. and also, Figure 4 yes image 3 The cross-sectional view of the line A-A'.

[0045] image 3 and Figure 4 The capacitor structure with figure 1 The capacitor structure is the basic configuration, and furthermore, a capacitor is formed by opposing electrodes in the lower wiring layer and between the upper and lower wiring layers.

[0046] Such as image 3 As shown, a first electrode 16 and a second electrode 26 are formed on the upper wiring layer. The first electrode 16 has a plurality of teeth 15 protruding from the electrode base 14 of the first electrode wiring 11 in a comb shape, and the second electrode 26 has a plurality of teeth protruding from the electrode base 24 o...

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Abstract

The capacitor structure includes a first electrode having a plurality of teeth protruding in a comb shape from an electrode base of a first electrode line and a second electrode having a plurality of teeth protruding in a comb shape from an electrode base of a second electrode line, both formed in a first wiring layer. The first and second electrodes face each other with their teeth interdigitated with each other via a dielectric. At least one of the teeth of the first electrode is electrically connected with a third electrode line formed in a second wiring layer.

Description

technical field [0001] The present invention relates to capacitor structures formed on integrated circuits on semiconductor substrates. Background technique [0002] As a conventional example of a capacitor structure on an integrated circuit formed on a semiconductor substrate, there is a so-called interdigitattion configuration in which a pair of counter electrodes formed The teeth are arranged in such a way that they mesh with each other. According to this capacitor structure, the tooth portions each form a capacitance between each other. That is, the surface area of ​​the counter electrode can be increased, and a capacitor having a large capacity can be obtained with the same area as compared with a simple parallel plate capacitor (for example, refer to Patent Document 1). [0003] Patent Document 1: JP-A-4-268756 (page 3, figure 1 ) [0004] However, in the above-mentioned conventional capacitor structure, since the capacitance is formed not on the main wiring of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L23/522
Inventor 冈本圣美杉冈徹郎足立一树
Owner コラボイノベーションズインコーポレイテッド
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