108results about How to "Suppresses characteristic deterioration" patented technology

In a bipolar transistor block, a base layer (20a) of SiGe single crystals and an emitter layer (26) of almost 100% of Si single crystals are stacked in this order over a collector diffused layer (9). Over both edges of the base layer (20a), a base undercoat insulating film (5a) and base extended electrodes (22) made of polysilicon are provided. The base layer (20a) has a peripheral portion with a thickness equal to that of the base undercoat insulating film (5a) and a center portion thicker than the peripheral portion. The base undercoat insulating film (5a) and gate insulating films (5b and 5c) for a CMOS block are made of the same oxide film. A stress resulting from a difference in thermal expansion coefficient between the SiGe layer as the base layer and the base undercoat insulating film 5a can be reduced, and a highly reliable BiCMOS device is realized.

It is an object to suppress deterioration in characteristics of a transistor in a driver cricuit. A driver circuit includes a first transistor, a second transistor including a gate and one of a source and a drain to which a second signal is inputted, a third transistor whose gate is electrically connected to one of a source and a drain of the first transistor and which controls whether a voltage state of an output signal is set or not by being turned on / off, and a fourth transistor whose gate is electrically connected to the other of the source and the drain of the second transistor and which controls whether a voltage state of an output signal is set or not by being turned on / off.

A chemical analyzing apparatus accommodates therein a structure for retaining a sample and reagents. A detecting mechanism detects the sample after reaction with a reagent. After or during extraction of a biological substance from the sample in the structure, a temperature of a fluid in a space around the structure is controlled to a value which is suitable for enzyme.

Deterioration of characteristics due to repeated cycles of coloration and discoloration in an electrochromic element comprising an oxidative coloration layer composed of a nickel oxide and a electrolyte composed of a solid electrolyte is suppressed. A lower ITO transparent electrode film 12 is formed on a transparent substrate 10. A nickel oxide film 32 making up an oxidative coloration layer, an intermediate layer 33, a tantalum oxide film making up a solid electrolyte layer, a mixed film comprising a tungsten oxide and a titanium oxide making up a reductive coloration layer, and an upper ITO transparent electrode film 20 making up an upper electrode film are formed on the lower ITO transparent electrode film 12 on this order. The intermediate layer 33 is a transparent film comprising a metal oxide such as SnO2, a metal such as Al, or a composite of the metal oxide and the metal.

A stacked capacitor in a memory cell has a bottom electrode made of a metal or metal compound, a capacitor insulation film and a top electrode made of a metal or a metal compound. The capacitor insulation film includes an aluminum oxide film having a thickness of 2 to 4 nm and in contact with the bottom electrode, and an overlying hafnium oxide film having a thickness of 3 to 6 nm. The stacked capacitor has a higher resistance against a biased temperature test.

In an aspect, a display device including: a substrate; a thin film transistor formed on the substrate, and comprising an active layer formed of an oxide semiconductor; a passivation layer formed on the thin film transistor; and a hydrogen blocking layer positioned between the active layer and the passivation layer is provided.

A transmission sequence generated by a first sector radar is a sequence obtained by multiplying a predetermined code sequence by a first orthogonalized code, and a transmission sequence generated by a second sector radar is a sequence obtained by multiplying a predetermined code sequence by a second orthogonalized code. A value obtained by multiplication of the ith element of the first orthogonalized code and the ith element of the second orthogonalized code is equal to the ith element of a fundamental sequence VV_2n having a length of 2n (n is an integer greater than or equal to 1). The fundamental sequence VV_2n includes a sub fundamental sequence VV_2(n−1) having a length of n and satisfies VV_2n={VV_2(n−1), −VV_2(n−1)} or {−VV_2(n−1), VV_2(n−1)}.

A capacitor comprises: a lower electrode formed of a foil made of a polycrystalline metal; an upper conductor layer; and a dielectric layer disposed between the lower electrode and the upper electrode layer. Grain boundaries of the polycrystalline metal appear at the top surface of the lower electrode. The capacitor further comprises an insulator that is disposed between the top surface of the dielectric layer and the bottom surface of the upper electrode layer and that is present only in part of a region in which the top surface of the dielectric layer and the bottom surface of the upper electrode layer face each other. The insulator is disposed to cover at least part of the grain boundaries appearing at the top surface of the lower electrode when seen from above the top surface of the dielectric layer. The insulator is formed by electrophoresis.

Provided is a solar cell module (100) wherein an adhesive (30) has a first adhesive portion (30A) which is formed from the light receiving surface of a solar cell (10) to the side surface (20S) of a wiring material (20).

An electrophoretic display device includes a common electrode and a plurality of pixel electrodes, and a disperse system containing electrophoretic particles, that is held between the common electrode and the plurality of pixel electrodes,. The electrophoretic display device includes a switching transistor and a control portion. The switching transistor supplies a corresponding one of the pixel electrodes with a low electric potential signal or a high electric potential signal supplied from a signal line. The control portion controls electric potential signals supplied to the pixel electrode and the common electrode to cause the electrophoretic particles to move. The switching transistor enters an on state when a gate electrode of the switching transistor is supplied with a first electric potential, and enters an off state when the gate electrode is supplied with a second electric potential. The control portion is provided with a first period during which control for causing the electrophoretic particles to move is performed and a second period during which, after the first period, the switching transistor is made to enter an off state. During the second period, when the first electric potential is smaller than the second electric potential, the control portion supplies a low electric potential signal from the signal line to the switching transistor and supplies a low electric potential signal to the common electrode, and when the first electric potential is larger than the second electric potential, the control portion supplies a high electric potential signal from the signal line to the switching transistor and supplies a high electric potential signal to the common electrode.

A bonding method by which a resin can be bonded to another resin at a lower temperature than in thermal fusion bonding with satisfactory productivity. The method of resin bonding, which is for bonding a first resin to a second resin, comprises a step (I) in which those surfaces of the first and second resins which are bonding surfaces are irradiated with ultraviolet and a step (II) in which the resins are heated while keeping the irradiated surfaces in contact with each other to thereby bond the first resin to the second resin, with those surfaces used as bonding surfaces. This bonding method can be applied, for example, to a process for producing a resin article comprising two or more parts which each has a resinous area and which have been bonded to each other at the resinous areas, and to a process for producing a microchip comprising a pair of resin substrates bonded to each other face-to-face, at least one of the resin substrates having a fine channel formed therein.

A surface emitting laser includes a pair of multilayer mirrors disposed opposing to each other, and an active layer disposed between the multilayer mirrors. In at least one multilayer mirror of the pair of multilayer mirrors, a plurality of first pair layers are stacked, each first pair layer is formed from a high-refractive index layer having a first strain and a low-refractive index layer having a second strain; and a second pair layer is included, the second pair layer is formed of one of the high-refractive index layer and the low-refractive index layer of the first pair layer in which one of the high-refractive index layer and the low-refractive index layer of the first pair layer is replaced with a layer formed from a quaternary or higher mixed crystal semiconductor material having a third strain.

A flexible electronic device excellent in heat liberation characteristics and toughness and a production method for actualizing thereof in low cost and with satisfactory reproducibility are provided. A protection film is adhered onto the surface of a substrate on which surface a thin film device is formed. Successively, the substrate is soaked in an etching solution to be etched from the back surface thereof so as for the residual thickness of the substrate to fall within the range larger than 0 μm and not larger than 200 μm. Then, a flexible film is adhered onto the etched surface of the substrate, and thereafter the protection film is peeled to produce a flexible electronic device.

A display device includes a pixel including a thin film transistor, and an under layer below the thin film transistor. The thin film transistor includes a first gate electrode, a semiconductor layer and a second gate electrode. The semiconductor layer includes a channel region that overlaps at least one of the first gate electrode and the second gate electrode in a plan view. The channel region curves in a thickness direction of the semiconductor layer. The first gate electrode includes a first edge located on the side of an edge of the channel region in a direction of a channel length. The second gate electrode includes a second edge located on the side of the edge of the channel region. The position of the first edge is different from the position of the second edge in the direction of the channel length.

The capacitor structure includes a first electrode having a plurality of teeth protruding in a comb shape from an electrode base of a first electrode line and a second electrode having a plurality of teeth protruding in a comb shape from an electrode base of a second electrode line, both formed in a first wiring layer. The first and second electrodes face each other with their teeth interdigitated with each other via a dielectric. At least one of the teeth of the first electrode is electrically connected with a third electrode line formed in a second wiring layer.

The present invention is directed to a polymer electrolyte fuel cell including: a hydrogen ion conductive polymer electrolyte membrane; a pair of electrodes sandwiching the membrane; a pair of conductive separators each having a gas flow channel means, one of which supplies a fuel gas to one of the electrodes and the other supplies an oxidant gas to the other electrode; and gaskets, each of which is sandwiched between the conductive separator and the hydrogen ion conductive polymer electrolyte membrane to surround the periphery of the electrode and the gas flow channel means, wherein a gram of the conductive separator or the gasket, which is kept immersed in water of 80 to 100°C for 50 hours, leaches into the water not more than 300 µg of TOC, not more than 50 µg of ammonium ion, not more than 50 µg of chloride ion, not more than 20 µg of bromide ion and not more than 10 µg of sulfite ion.

Disclosed herein are a method of manufacturing solid-state image pickup elements, a solid-state image pickup element, an image pickup device, an electronic apparatus, a solid-state image pickup device, and a method of manufacturing the solid-state image pickup device. The solid-state image pickup element has a lens provided above a light receiving portion. The manufacturing method includes: forming a lens base material layer composing the lens; forming an intermediate film having a thermal expansion coefficient larger than that of a resist on the lens base material layer; forming the resist in contact with the intermediate film; forming the resist into a lens shape by thermal reflow; and transferring the lens shape of the resist to the lens base material layer by etching, thereby forming the lens. The solid-state image pickup element reduces lens invalid areas and the methods maintain machining precision, and characteristic degradation of the solid-state image pickup element is restrained and the solid-state image pickup elements are easier to manufacture.

A nitride semiconductor light-emitting system includes a nitride semiconductor light-emitting device, a base mount holding the nitride semiconductor light-emitting device, having an opening, and containing first metal as a main component, a cap adhered to the base mount, and a lead pin penetrating the opening. The lead pin is fixed to an inner wall of the opening with an insulating member and a buffer member interposed therebetween, the buffer member and the insulating member being stacked on the inner wall in this order. The insulating member contains silicon oxide as a component. The buffer member is made of second metal having a smaller standard oxidation-reduction potential than the first metal, or an alloy containing the second metal.

An electrophoretic display device includes a common electrode and a plurality of pixel electrodes, a disperse system containing electrophoretic particles, the disperse system being held between the common electrode and the plurality of pixel electrodes. The electrophoretic display device includes a switching transistor and a control portion. the switching transistor supplies a corresponding one of the pixel electrodes with a low electric potential signal or a high electric potential signal supplied from a signal line. The control portion controls an electric potential applied between each of the pixel electrodes and the common electrode to cause the electrophoretic particles to move. The control portion provides, in a period during which control for causing the electrophoretic particles to move is performed, a first period during which the switching transistor is held in an on state and a second period during which the switching transistor is held in an off state. The first period continues until charging of the pixel electrode is complete. The second period continues from an end of the first period until movement of the electrophoretic particles is complete.

A method for manufacturing a semiconductor device, which can suppress a decrease in mobility and decrease in reliability caused by an increase in interface state density between a semiconductor layer and an insulating film. The method for manufacturing a semiconductor device comprises: a step of forming a laminate structure wherein control gate electrodes and interlayer insulating films are alternately laminated; a step of forming a through hole which penetrates the laminate structure in the lamination direction of the control gate electrodes and the interlayer insulating films; a step of forming a first insulating film covering the inner surface of the through hole; a step of forming a charge storage part covering the inner surface of the first insulating film; a step of forming a second insulating film covering the inner surface of the charge storage part; a step of forming a semiconductor layer covering the inner surface of the second insulating film; and a step of oxidizing the interface between the semiconductor layer and the second insulating film by performing a heat treatment at a temperature not higher than 600 DEG C in an atmosphere containing oxygen.

A display, a method of manufacturing the display, and an electronic apparatus are provided. The display includes a resin, a transistor; and a light shielding material positioned between the resin and the transistor. The light shielding material is configured to suppress an incidence of light on the transistor. Light is prevented from entering an oxide semiconductor layer to be used as an active layer so as to suppress deterioration of transistor characteristics.

An amplifier circuit unit of a radio frequency module is mounted on a substrate with a first external terminal interposed therebetween, a switch circuit unit is mounted on the substrate with a second external terminal interposed therebetween, and a matching circuit unit is mounted on the substrate with a first terminal and a second terminal interposed therebetween. The first terminal is electrically connected to the second external terminal of the switch circuit unit, and the second terminal is electrically connected to the first external terminal of the amplifier circuit unit. When viewed from a direction perpendicular to one main surface of the substrate, the first terminal is superposed with the second external terminal of the switch circuit unit, and the second terminal is superposed with the first external terminal of the amplifier circuit unit.

An electrophoretic display device includes a common electrode, pixel electrodes, and a disperse system of electrophoretic particles. A transistor supplies one of the pixel electrodes with a first potential or a second potential higher than the first potential. During a first period, a control portion supplies a third potential to the gate electrode to turn on the transistor, supplies the first potential to a signal line or the common electrode, and supplies the second potential to the other line. During a second period, the control portion supplies a fourth potential higher than the third potential to the gate electrode to turn off the transistor, and supplies the first potential to both the signal line and the common electrode so that the pixel electrode potential substantially reaches the common electrode potential. The third potential is lower than the second potential and the fourth potential is higher than the first potential.

A laser diode array includes: a heat dissipator; a plurality of submounts disposed independently of one another on the heat dissipator; and a plurality of laser diode devices including two or more kinds of laser diode devices with different oscillation wavelengths, the laser diode devices being disposed on the respective submounts, and being electrically connected to one another.

The invention relates to a luminescent device and a method of manufacturing the same. The luminescent device (1) in the invention comprises a glass matrix (2) made of white glass and provided with a pit in the center, through electrodes (4a,4b) formed by filling a through hole (3) equipped on the surface of the pit (5) with conductive materials, a light emitting diode element (6) installed on the through electrode (4a) and accommodated by the pit (5) and a sealant (7) for sealing the light emitting diode element (6). The reliability of the luminescent device with a luminous element carried on the glass materials is thus improved.

In a conventional method of driving a plasma display panel, for example, an auxiliary discharge is executed between an A electrode and a Y electrode to improve light-emission efficiency of a display discharge. However, since a phosphor layer is present between the A electrode and the Y electrode, the phosphor layer is exposed to a discharge, whereby there is a problem that its characteristic deteriorates. A method of driving a plasma display panel having a structure, in which at least three display electrodes X, Y, and Z used for a display discharge are provided to a display cell and no phosphor layer is formed between said display electrodes and a discharge space, the method comprising the steps of: varying a potential of at least one display electrode Z of said display electrodes during said display discharge; and making a potential of said at least one display electrode Z at a time of starting said display discharge different from that at a time of ending said display discharge.

A power converter includes a first electric power conversion unit having an inverter for converting a first DC electric power to an AC electric power, an AC circuit connected to the first electric power conversion means;a second electric power conversion unit for receiving the first DC electric power and converting the same to a second DC electric power having a voltage level that differs from the voltage level of the first DC electric power, a power storage unit for storing the second DC electric power of the second electric power conversion unit; and a ripple suppressor having a first inductance for guiding the second DC electric power of the second electric power conversion unit to the power storage means and a second inductance for suppressing the ripple component included in the second DC electric power arranged between the second electric power conversion unit and the power storage unit.