105results about How to "Suppresses characteristic deterioration" patented technology

In a bipolar transistor block, a base layer (20a) of SiGe single crystals and an emitter layer (26) of almost 100% of Si single crystals are stacked in this order over a collector diffused layer (9). Over both edges of the base layer (20a), a base undercoat insulating film (5a) and base extended electrodes (22) made of polysilicon are provided. The base layer (20a) has a peripheral portion with a thickness equal to that of the base undercoat insulating film (5a) and a center portion thicker than the peripheral portion. The base undercoat insulating film (5a) and gate insulating films (5b and 5c) for a CMOS block are made of the same oxide film. A stress resulting from a difference in thermal expansion coefficient between the SiGe layer as the base layer and the base undercoat insulating film 5a can be reduced, and a highly reliable BiCMOS device is realized.

It is an object to suppress deterioration in characteristics of a transistor in a driver cricuit. A driver circuit includes a first transistor, a second transistor including a gate and one of a source and a drain to which a second signal is inputted, a third transistor whose gate is electrically connected to one of a source and a drain of the first transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off, and a fourth transistor whose gate is electrically connected to the other of the source and the drain of the second transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off.

A chemical analyzing apparatus accommodates therein a structure for retaining a sample and reagents. A detecting mechanism detects the sample after reaction with a reagent. After or during extraction of a biological substance from the sample in the structure, a temperature of a fluid in a space around the structure is controlled to a value which is suitable for enzyme.

Deterioration of characteristics due to repeated cycles of coloration and discoloration in an electrochromic element comprising an oxidative coloration layer composed of a nickel oxide and a electrolyte composed of a solid electrolyte is suppressed. A lower ITO transparent electrode film 12 is formed on a transparent substrate 10. A nickel oxide film 32 making up an oxidative coloration layer, an intermediate layer 33, a tantalum oxide film making up a solid electrolyte layer, a mixed film comprising a tungsten oxide and a titanium oxide making up a reductive coloration layer, and an upper ITO transparent electrode film 20 making up an upper electrode film are formed on the lower ITO transparent electrode film 12 on this order. The intermediate layer 33 is a transparent film comprising a metal oxide such as SnO₂, a metal such as Al, or a composite of the metal oxide and the metal.

A stacked capacitor in a memory cell has a bottom electrode made of a metal or metal compound, a capacitor insulation film and a top electrode made of a metal or a metal compound. The capacitor insulation film includes an aluminum oxide film having a thickness of 2 to 4 nm and in contact with the bottom electrode, and an overlying hafnium oxide film having a thickness of 3 to 6 nm. The stacked capacitor has a higher resistance against a biased temperature test.

In an aspect, a display device including: a substrate; a thin film transistor formed on the substrate, and comprising an active layer formed of an oxide semiconductor; a passivation layer formed on the thin film transistor; and a hydrogen blocking layer positioned between the active layer and the passivation layer is provided.

A transmission sequence generated by a first sector radar is a sequence obtained by multiplying a predetermined code sequence by a first orthogonalized code, and a transmission sequence generated by a second sector radar is a sequence obtained by multiplying a predetermined code sequence by a second orthogonalized code. A value obtained by multiplication of the ith element of the first orthogonalized code and the ith element of the second orthogonalized code is equal to the ith element of a fundamental sequence VV_2n having a length of 2n (n is an integer greater than or equal to 1). The fundamental sequence VV_2n includes a sub fundamental sequence VV_2(n−1) having a length of n and satisfies VV_2n={VV_2(n−1), −VV_2(n−1)} or {−VV_2(n−1), VV_2(n−1)}.

Provided is a solar cell module (100) wherein an adhesive (30) has a first adhesive portion (30A) which is formed from the light receiving surface of a solar cell (10) to the side surface (20S) of a wiring material (20).

A bonding method by which a resin can be bonded to another resin at a lower temperature than in thermal fusion bonding with satisfactory productivity. The method of resin bonding, which is for bonding a first resin to a second resin, comprises a step (I) in which those surfaces of the first and second resins which are bonding surfaces are irradiated with ultraviolet and a step (II) in which the resins are heated while keeping the irradiated surfaces in contact with each other to thereby bond the first resin to the second resin, with those surfaces used as bonding surfaces. This bonding method can be applied, for example, to a process for producing a resin article comprising two or more parts which each has a resinous area and which have been bonded to each other at the resinous areas, and to a process for producing a microchip comprising a pair of resin substrates bonded to each other face-to-face, at least one of the resin substrates having a fine channel formed therein.

A display device includes a pixel including a thin film transistor, and an under layer below the thin film transistor. The thin film transistor includes a first gate electrode, a semiconductor layer and a second gate electrode. The semiconductor layer includes a channel region that overlaps at least one of the first gate electrode and the second gate electrode in a plan view. The channel region curves in a thickness direction of the semiconductor layer. The first gate electrode includes a first edge located on the side of an edge of the channel region in a direction of a channel length. The second gate electrode includes a second edge located on the side of the edge of the channel region. The position of the first edge is different from the position of the second edge in the direction of the channel length.

A display, a method of manufacturing the display, and an electronic apparatus are provided. The display includes a resin, a transistor; and a light shielding material positioned between the resin and the transistor. The light shielding material is configured to suppress an incidence of light on the transistor. Light is prevented from entering an oxide semiconductor layer to be used as an active layer so as to suppress deterioration of transistor characteristics.

An amplifier circuit unit of a radio frequency module is mounted on a substrate with a first external terminal interposed therebetween, a switch circuit unit is mounted on the substrate with a second external terminal interposed therebetween, and a matching circuit unit is mounted on the substrate with a first terminal and a second terminal interposed therebetween. The first terminal is electrically connected to the second external terminal of the switch circuit unit, and the second terminal is electrically connected to the first external terminal of the amplifier circuit unit. When viewed from a direction perpendicular to one main surface of the substrate, the first terminal is superposed with the second external terminal of the switch circuit unit, and the second terminal is superposed with the first external terminal of the amplifier circuit unit.

A laser diode array includes: a heat dissipator; a plurality of submounts disposed independently of one another on the heat dissipator; and a plurality of laser diode devices including two or more kinds of laser diode devices with different oscillation wavelengths, the laser diode devices being disposed on the respective submounts, and being electrically connected to one another.

In a conventional method of driving a plasma display panel, for example, an auxiliary discharge is executed between an A electrode and a Y electrode to improve light-emission efficiency of a display discharge. However, since a phosphor layer is present between the A electrode and the Y electrode, the phosphor layer is exposed to a discharge, whereby there is a problem that its characteristic deteriorates. A method of driving a plasma display panel having a structure, in which at least three display electrodes X, Y, and Z used for a display discharge are provided to a display cell and no phosphor layer is formed between said display electrodes and a discharge space, the method comprising the steps of: varying a potential of at least one display electrode Z of said display electrodes during said display discharge; and making a potential of said at least one display electrode Z at a time of starting said display discharge different from that at a time of ending said display discharge.

A power converter includes a first electric power conversion unit having an inverter for converting a first DC electric power to an AC electric power, an AC circuit connected to the first electric power conversion means;

a second electric power conversion unit for receiving the first DC electric power and converting the same to a second DC electric power having a voltage level that differs from the voltage level of the first DC electric power, a power storage unit for storing the second DC electric power of the second electric power conversion unit; and a ripple suppressor having a first inductance for guiding the second DC electric power of the second electric power conversion unit to the power storage means and a second inductance for suppressing the ripple component included in the second DC electric power arranged between the second electric power conversion unit and the power storage unit.