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Method for manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as reliability degradation, and achieve the effect of suppressing interface state density

Inactive Publication Date: 2012-06-13
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This increase in voltage leads to deterioration in the reliability of the device and the disadvantages of multi-valued

Method used

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  • Method for manufacturing semiconductor device
  • Method for manufacturing semiconductor device

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no. 1 Embodiment approach

[0071] Next, a method of manufacturing the semiconductor device according to the first embodiment will be described. The semiconductor device manufactured by the manufacturing method of this embodiment is a MONOS type nonvolatile memory, which has a control gate electrode made of doped polysilicon or the like and an interlayer insulating film made of a silicon oxide film or the like. It has a stacked structure and has a plurality of memory cells. Refer below Figure 11 to Figure 15 , the method of manufacturing the nonvolatile memory of this embodiment will be described.

[0072] First, a stacked structure 10 is formed in which a control gate electrode 11 including doped polysilicon or the like and an interlayer insulating film 12 including a silicon oxide film or the like are stacked multiple times ( Figure 11 ). Next, using, for example, dry etching, a through-hole 13 ( Figure 12 ).

[0073] A charge blocking insulating film 14 including a high dielectric constant ins...

no. 2 Embodiment approach

[0095] Next, a method of manufacturing a semiconductor device according to the second embodiment will be described. The semiconductor device manufactured by the manufacturing method of this embodiment includes a thin film transistor (TFT). The TFT has: the SiO 2 A gate electrode containing polysilicon or metal formed on an insulating film substrate, including SiO 2 A gate insulating film such as a film, a source terminal and a drain terminal containing polysilicon or metal, and a channel semiconductor layer containing polysilicon or amorphous silicon. refer to Figure 20 (a)~ Figure 21 (b) The manufacturing method of the TFT of this embodiment is demonstrated.

[0096] First, SiO is formed on the surface 2 The Si substrate (not shown) of the film 31 is subjected to SH treatment to remove SiO 2 Impurities adsorbed on the surface of the membrane 31. Next, using, for example, silane (SiH 4 ) as a raw material gas plasma CVD method on which amorphous silicon is formed. T...

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Abstract

A method for manufacturing a semiconductor device, which can suppress a decrease in mobility and decrease in reliability caused by an increase in interface state density between a semiconductor layer and an insulating film. The method for manufacturing a semiconductor device comprises: a step of forming a laminate structure wherein control gate electrodes and interlayer insulating films are alternately laminated; a step of forming a through hole which penetrates the laminate structure in the lamination direction of the control gate electrodes and the interlayer insulating films; a step of forming a first insulating film covering the inner surface of the through hole; a step of forming a charge storage part covering the inner surface of the first insulating film; a step of forming a second insulating film covering the inner surface of the charge storage part; a step of forming a semiconductor layer covering the inner surface of the second insulating film; and a step of oxidizing the interface between the semiconductor layer and the second insulating film by performing a heat treatment at a temperature not higher than 600 DEG C in an atmosphere containing oxygen.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device. Background technique [0002] In various semiconductor devices, the technique of controlling the interface between an insulating film and a semiconductor is very important. When the insulating film is a tunnel insulating film used in a flash memory, the insulating film also plays a role of not only controlling the flow of carriers flowing in the semiconductor based on the electric field applied between the gate electrode and the semiconductor layer. conduction, and controls the exchange of electrons between the charge storage film and the semiconductor layer. [0003] As a method of forming the tunnel insulating film on the semiconductor layer, the so-called thermal oxidation process, which exposes the surface of the semiconductor layer to oxygen molecular gas at atmospheric pressure at a high temperature of 900°C or higher, has gradually changed to CVD (Chemical Vapor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L21/316H01L21/336H01L27/115H01L29/78H01L29/786H01L29/788H01L29/792
CPCH01L27/11582H01L21/32105G11C16/0466H01L29/4908G11C16/04H01L29/78678H01L21/28282H01L29/66765H01L21/02238H01L29/7926H01L21/02164H01L21/02312H01L29/40117H10B43/27H01L29/66833
Inventor 松下大介加藤弘一三谷祐一郎
Owner KK TOSHIBA
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