34results about How to "High-frequency characteristic" patented technology

A semiconductor device has: a buffer layer formed on a conductive substrate and made of Al_xGa_1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type Al_yGa_1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

In a bipolar transistor block, a base layer (20a) of SiGe single crystals and an emitter layer (26) of almost 100% of Si single crystals are stacked in this order over a collector diffused layer (9). Over both edges of the base layer (20a), a base undercoat insulating film (5a) and base extended electrodes (22) made of polysilicon are provided. The base layer (20a) has a peripheral portion with a thickness equal to that of the base undercoat insulating film (5a) and a center portion thicker than the peripheral portion. The base undercoat insulating film (5a) and gate insulating films (5b and 5c) for a CMOS block are made of the same oxide film. A stress resulting from a difference in thermal expansion coefficient between the SiGe layer as the base layer and the base undercoat insulating film 5a can be reduced, and a highly reliable BiCMOS device is realized.

A high-frequency semiconductor device includes: a first cell which includes of gate electrodes on a surface of an epitaxial layer of a substrate, drain electrodes and source electrodes alternately located relative to the gate electrodes, a source electrode connection wiring striding over the gate electrodes and the drain electrodes and connecting the source electrodes, and a drain electrode connection wiring striding over the gate electrodes and the source electrodes and connecting the drain electrodes; a second cell which has the same configurations as the first cell, is located in an extended direction of each of the gate electrodes of the first cell, and has the drain electrode connection wiring proximate to the drain electrode connection wiring of the first cell; and a gate electrode bar located between the drain electrode connection wirings of the first and second cells, and to which the gate electrodes of the first and second cells are connected.

A substrate module includes a first substrate and a second substrate. The first substrate comprises a base material; a transmission line in which a signal line is sandwiched between two ground patterns, on the surface of the base material; a ground pattern on the rear surface of the base material; and an exposed portion in which the ground pattern on the substrate surface is exposed by partially cutting out the base material and the ground pattern on the substrate rear surface. The second substrate comprises a base material and a transmission line in which a signal line is sandwiched between two ground patterns, on the surface of the base material. In connecting a transmission line of the first substrate and that of the second substrate, the ground patterns of the first and second substrates are fused with each other at the exposed portion and fixed.

A surface treated copper foil having high frequency characteristics, capable of forming fine pattern and having sufficient peel strength, wherein surface roughness Rz of roughening treated surface made by adhering roughening particles on at least one surface side of untreated copper foil is 0.6 to 1.5 μm and a brightness value is 35 or smaller; and a circuit board, on which wiring pattern is formed by the same surface treated copper foil, are provided.

An intermediate portion of an insulating sheath of a coaxial cable is removed, and a first insulating sheath portion is drawn toward a second insulating sheath portion, so that a braid is projected into an annular shape outwardly from an interval between opposed ends of the first and second insulating sheath portions to form an annular projecting braid portion, and this annular projecting braid portion is fixed so as to be connected to a portion (that is, a braid fixing portion) of a coaxial cable shielding terminal for connection to an end portion of the coaxial cable. This connecting and fixing operation is effected by press-contacting or press-clamping.

A cable connector compatible to USB 3.0 standard includes an insulative housing having, a number of contacts and an inner circuit board for establishing electrically connection between the contacts and cables. The contacts are divided into a first contact group including a number of first contacts and a second contact group including a number of second contacts. The inner circuit board includes a first soldering area having a number of separated first pads connected to the first and the second contacts. The first pads include a first grounding pad connected to a grounding contact of the second contacts. The second soldering area includes a number of separated second pads connected to the cables. At least two adjacent or separated second pads are electrically connected to the first grounding pad for improving high frequency characteristics.

A semiconductor device that includes transistors with different threshold voltages is provided. Alternatively, a semiconductor device including a plurality of kinds of circuits and transistors whose electrical characteristics are different between the circuits is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes an oxide semiconductor, a conductor, a first insulator, a second insulator, and a third insulator. The conductor has a region where the conductor and the oxide semiconductor overlap with each other. The first insulator is positioned between the conductor and the oxide semiconductor. The second insulator is positioned between the conductor and the first insulator. The third insulator is positioned between the conductor and the second insulator. The second insulator has a negatively charged region.

The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT. The respective topside electrodes for the other via holes located so as not to face the HBT are provided in contact with the MMIC substrate.

A semiconductor devices has a structure reducing resistances to a high frequency current. The semiconductor device includes a semi-insulating substrate, a first n-type layer made of a compound semiconductor, and a first p-type layer made of a compound semiconductor in which a signal current flows in a lateral direction, parallel to the semi-insulating substrate. The first p-type layer is sandwiched between the semi-insulating substrate and the first n-type layer. A second n type layer made of a compound semiconductor is between the semi-insulating substrate and the first p type layer. An alternating current component of the signal current flows through the second n type layer.

A slotless amorphous ferroalloy electric machine with radial magnetic circuit and a manufacturing method. The invention includes a stator iron core (21), a cylinder formed by winding an amorphous ferroalloy strip, a stator winding (22) is integrally in the shape of a cylinder and fixed on the internal cylindrical surface of the stator iron core (21), connecting with a metal reinforcing sleeve (25). A radial air gap (5) is arranged between the internal cylindrical surface of the metal reinforcing sleeve (25) and the external surface of a rotor (3). A rotor iron core (31) having a hollow amorphous ferroalloy cylindrical structure and the inner bore wall of the rotor iron core (31) is provided with keyway (312) used for connecting with a electric machine shaft (6) that the radial external surface of the rotor iron core (31) matches with permanent magnets (32).

Provided is an element with stable electrical characteristics or a device including plural kinds of elements with stable electrical characteristics. The semiconductor device includes a first insulator, a transistor over the first insulator, a second insulator over the transistor, and a third insulator over the second insulator. The second insulator includes an opening reaching the first insulator. The opening is filled with a fourth insulator. The first insulator, the third insulator, and the fourth insulator each have a lower hydrogen-transmitting property than the second insulator.

A semiconductor device with stable electrical characteristics is provided. Alternatively, a semiconductor device having normally-off electrical characteristics is provided. A semiconductor device includes a gate electrode, a gate insulator, and an oxide semiconductor, the oxide semiconductor contains fluorine in a channel formation region, and a fluorine concentration in the channel formation region is higher than or equal to 1×10²⁰ atoms/cm³ and lower than or equal to 1×10²² atoms/cm³. Note that fluorine is added by an ion implantation method.

A method of receiving video data, a control signal, etc. via a non-contact transmission path is adopted, and a receiving circuit for receiving and amplifying a signal is formed on the same insulating substrate as a display device. Thus, there are provided a thin-film transistor which is formed in a semiconductor thin film that is formed on the insulating substrate and crystallized in a predetermined direction, and an inductor for forming an inductive-coupling circuit, which is formed by using an electrically conductive thin film provided on the insulating substrate. The direction of movement of carriers flowing in the thin-film transistor is parallel to the direction of crystallization of the semiconductor thin film, and the inductor and the thin-film transistor are integrated so as to be electrically coupled directly or indirectly.

A circuit substrate device composed of a circuit unit 2 and a multi-layer wiring substrate 3 in which a pattern conductor of the circuit unit 2 may be prevented from being warped or inundated. The circuit substrate device includes a circuit unit 2 having a pattern conductor formed by a thin film technique, and an insulating layer, and a multi-layer wiring substrate 3 having a connecting terminal portion 14 exposed from its major surface. The circuit unit is formed on a dummy substrate. The circuit unit is connected to the multi-layer wiring substrate 3 so that the pattern conductor is connected to the connecting terminal portion 14. The dummy substrate is then removed to give a structure comprised of the circuit unit 2 formed on the multi-layer wiring substrate 3. The pattern conductor of the circuit unit 2 is freed of warping or inundations along the direction of thickness of the circuit unit 2.

Provided is a method for producing a metal-clad laminate of a thermoplastic liquid crystal polymer film (TLCP film) and a metal sheet(s) bonded to at least one surface of the film using roll-to-roll processing. The metal sheet has a surface with a ten-point average roughness (Rz) of 5.0 μm or less to be bonded to the TLCP film. The method includes preparing the laminate, dry-treating the laminate by subjecting the laminate passed through a dry zone satisfying the following conditions (1) and (2):

• • (1) a drying temperature of lower than the melting point of the TLCP film,
  • (2) for a drying period of 10 seconds or longer, and
  • heat-treating the dried laminate by subjecting the laminate passed through a heating zone on a temperature condition of not lower than the melting point of the TLCP film successively after the dry treatment.

An electrical plug connector includes a metallic shell, an insulated housing, a power terminal group, and a signal terminal group received in the metallic shell. Each terminal of the power terminal group includes a first contact portion, a second contact portion, and a positioning plate that are formed as a clamp structure. The first contact portion extends from an upper portion of the positioning plate and is above the insertion cavity of the insulated housing. The second contact portion extends from a lower portion of the positioning plate and is below the insertion cavity of the insulated housing. Each terminal of the signal terminal group is side-by-side arranged with the corresponding terminal of the power terminal group. A cross-sectional area of each terminal of the signal terminal group is less than a cross-sectional area of the corresponding terminal of the power terminal group.

A tuner circuit and a method of designing a tuner circuit for removing a buffer circuit for video drive for increasing drive current capacitance added to an output terminal is provided, unlike a buffer for small-current drive installed in a tuner circuit. The method of designing a tuner circuit has a buffer installed in an integrated circuit (IC) of small-current drive in a video output terminal, and includes an RF converting portion, a tuning portion and a demodulation portion, in which a video output signal of the buffer in IC is input to an input circuit for processing a signal without an external buffer for drive, and the amount of attenuation of a signal at high frequency due to small drive current is measured to improve a frequency characteristic of a video signal in the tuner circuit in proportion to the amount of attenuation. Thus, an additional buffer for drive is not required, so that the number of devices is reduced, to thereby lower the material costs.

The present invention discloses a method for preparing a novel material layer structure of a circuit board, comprising the steps of: (1) combining a film with a copper layer to form an FCCL single-sided board; (2) applying a semi-cured functional material layer on a back side of the film of the FCCL single-sided board, wherein the semi-cured functional material layer is an MPI film, an LCP film, a TFP film, a PTFE film, a copper ion migration resistant film, an LDK high-frequency functional adhesive, a copper ion migration resistant adhesive, or a mixture of the LDK high-frequency functional adhesive and the copper ion migration resistant adhesive to form a novel material layer structure for a circuit board. An article prepared by performing the above methods is also disclosed. The prepared novel material layer structure of the circuit board has high-frequency characteristics and/or copper ion migration resistance, and can be used as an integral structure. In the circuit board manufacturing process, it can be manufactured as the circuit board manufacturing material to be different circuit board structures, which brings great convenience for subsequent circuit board manufacturing and simplifies the manufacturing process.

The present invention discloses a method for manufacturing a multi-layer flexible circuit board, comprising the steps of: (1) manufacturing a double-sided FPC flexible board; (2) manufacturing a novel material layer structure; (3) hot pressing at least one group of upeer novel material layer structures on the circuits on the upper and/or lower surfaces of the double-sided FPC flexible board; forming a protective layer on the circuits of an outermost novel material layer structure and/or on exposed circuits of the double-sided FPC flexible board so as to obtain a multi-layer flexible circuit board. The present invention also discloses a multi-layer flexible circuit board manufactured by performing the above-mentioned method. The manufacturing process of the present invention is simplified, convenient and efficient; the multi-layer flexible circuit board not only greatly simplifies the novel material layer structure and reduces the overall thickness, but also has the function of high-speed transmission of high-frequency signals, especially suitable for new 5G technology products. It can protect and resist the migration of copper ions when it is energized between circuits so as to ensure the safety and normal operation of circuits.