Display, method of manufacturing the same and electric apparatus

Abstract

A display, a method of manufacturing the display, and an electronic apparatus are provided. The display includes a resin, a transistor; and a light shielding material positioned between the resin and the transistor. The light shielding material is configured to suppress an incidence of light on the transistor. Light is prevented from entering an oxide semiconductor layer to be used as an active layer so as to suppress deterioration of transistor characteristics.

Description

Technical field [0001] The present disclosure relates to a display using a thin film transistor (TFT) whose active layer is made of an oxide semiconductor and a method of manufacturing the display. Background technique [0002] As a basic technology, TFT is widely used in liquid crystal displays, organic EL displays, etc. Generally, the semiconductor layer used as the active layer of the TFT is made of amorphous silicon (a-Si:H) or polysilicon, but in recent years, oxides such as metal oxides formed by inexpensive equipment such as magnetron sputtering have been used. Semiconductors are also used to form such semiconductor layers. However, if light (especially ultraviolet light of 420 nm or shorter) is irradiated on a semiconductor layer made of an oxide semiconductor, it may change its TFT characteristics due to light induction, or more specifically, its threshold level voltage ( Vth) may shift to the negative (-) direction. [0003] To solve this problem, for example, Japanese...

AI Technical Summary

Problems solved by technology

However, if light (especially ultraviolet light of 420nm or less) is irradiated on a semiconductor layer made of an oxide semiconductor, its TFT characteristics, or more specifically, its threshold level voltage ( Vth) may be shifted to the negative (-) direction

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