High frequency module

Abstract

The present invention provides a high frequency module having a base substrate unit ( 2 ) which has its uppermost layer planarized to form a buildup-forming surface ( 16 ), a high frequency circuit unit ( 3 ) having multiple wiring layers which are formed on the base substrate unit ( 2 ), each of which layers has a wiring pattern and film elements formed on a dielectric insulating layer thereof, whose uppermost wiring layer ( 17 ) has plural lands ( 22 ) and ground patterns ( 20 ) formed thereon together with the wiring pattern and inductor elements ( 19 ), and a semiconductor chip ( 4 ) mounted on the wiring layer ( 17 ) of the high frequency circuit unit ( 3 ). Transmission lines ( 24 ) to connect the inductor elements ( 19 ) and lands ( 22 ) which are formed on the wiring layer ( 17 ) are directed within hollowed pattern regions ( 20 c) formed at the ground pattern ( 20 ) to constitute coplanar type transmission lines.

Description

technical field [0001] The present invention relates to a high-frequency module used in a wireless communication component with a wireless communication function and a storage function. [0002] This application claims priority based on Japanese Patent Application Serial No. 2002-062250 filed on March 7, 2002 in Japan, and this application refers to and cites this application. Background technique [0003] Various information communication systems With the development of various communication terminal equipment and data processing systems, through the installation of ISDN (Integrated Service Digital Network: Integrated Service Digital Network) and digital transmission and other service networks, the use of fixed equipment to mobile equipment Information reception, delivery of is attracting attention. A wireless communication component with a wireless communication function and a storage function is installed in the communication device. The wireless communication component...

AI Technical Summary

Problems solved by technology

In this high-frequency module substrate 200, since the ground patterns 209a, 209b are connected to the ground pattern on the base substrate side through the metal-plated interlayer as described above, the resistance component and the inductance component such as the metal-plated interlayer affect the high-frequency wave. sexual problems

In addition, in the high-frequency module substrate 200, since capacitance components are generated between each passive element and the ground pattern on the base substrate side, problems such as a decrease in the Q value of the self-resonant frequency and a quality factor, and deterioration of characteristics occur.

[0019] Furthermore, due to Figure 5 The high-frequency module substrate 200 shown has a ground pattern defining a ground plane on the base substrate side as described above, and the transmission line 204 constitutes a microstrip transmission line. uneven thickness

Thus, if Figure 5 In the high-frequency module substrate 200 shown, it is difficult to form the high-frequency circuit part with high-precision molding on the base substrate part, and problems such as deterioration of high-frequency characteristics arise.

Images