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141results about How to "Reduce the impedance value" patented technology

Millimeter-wave microstrip array antenna

The invention relates to the technical field of antennas, in particular to a millimeter-wave microstrip array antenna. The millimeter-wave microstrip array antenna comprises a dielectric plate, patch array antennas and a feed network, wherein the dielectric plate comprises a double-layer plate body, and a metal ground is clamped between the two layers of the double-layer plate body; the feed network is a one-to-n path of T-type power dividing circuit, each branch port of the feed network is provided with a feed point, the patch array antennas are arranged in n columns, and central symmetry points of the patch array antennas are provided with coaxial feed probes which penetrate the dielectric plate vertically so as to connect the feed points with the patch array antenna; and on the same column of the patch array antennas, the coaxial feed probes are directly connected between relatively proximate microstrip patches on a group of patch units, and are interconnected between relatively proximate microstrip patches on another group of patch units by means of 180-degree phase shifters. The millimeter-wave microstrip array antenna has the advantages of high gain, low sidelobe and miniaturization, and can effectively realize the high integration and miniaturization requirements of the whole antenna structure.
Owner:ANHUI SUN CREATE ELECTRONICS

Leakage liquid detection sensor of circuit formed by utilizing ion sputtering coating and manufacturing process of leakage liquid detection sensor

The invention relates to a manufacturing process of a leakage liquid detection sensor of a circuit formed by utilizing ion sputtering coating. A heat-resistant and corrosion-resistant material is adopted to be taken as a substrate film, an insulating substance coating is formed on the upper surface of the substrate film by utilizing ion sputtering coating process, and two double-conduction lines are fabricated on the insulating coating through adoption of an ion sputtering coating manner; the upper surface of insulating coating is provided with a bonding layer and a protective film layer which are attached to each other; if a uniform conductive film is formed on a surface of the whole body of the substrate film or the insulating coating, film coating is performed after further coverage of a shielding adhesive tape, the shielding adhesive tape is removed after the ion sputtering coating process, and then a conduction line is formed; and a liquid leakage detection device is fabricated. The manufacturing process is advantageous in that various liquids or moisture can be prevented from resulting in corrosion occurring in the conduction line, leakage of a conductive liquid can be accurately detected, and occurrence of false alarms is minimized; reliability of the liquid leakage detection device is improved; and improvement of a bonding force between the film layers is facilitated, the stripping possibility of the upper-layer protective film layer is reduced, and the reject ratio of products is reduced.
Owner:DOGO TECH CO LTD

Near field communication antenna and manufacturing method thereof, display module and display system

The invention discloses a near field communication antenna and a manufacturing method thereof, a display module and a display system, wherein the near field communication antenna comprises a substrate, wherein an annular antenna is arranged on the substrate; the annular antenna comprises a line-crossing area and an annular wire; the annular antenna further comprises a first electrode terminal anda second electrode terminal; the annular wire is connected with the first electrode terminal and the second electrode terminal, so that signals of the annular antenna can reach the second electrode terminal from the first electrode terminal; the annular wire comprises an M1 bottom layer structure and an M2 top layer structure, wherein the M1 bottom layer structure is arranged on the substrate, andthe M2 top layer structure is in contact with the bottom layer structure and is far away from the substrate; and the line-crossing area comprises an M1 bottom layer structure arranged on the substrate, an insulating layer in contact with the bottom layer structure, and an M2 top layer structure in contact with the insulating layer and far from the insulating layer. By virtue of the near field communication antenna and the manufacturing method thereof, the display module and the display system provided by the invention, the problem that the signal transmitting performance of an NFC antenna ofan existing display screen is relatively poor is solved.
Owner:SHANGHAI TIANMA MICRO ELECTRONICS CO LTD

Electrode plate and manufacturing method thereof, super-capacitor and lithium ion battery

The embodiment of the invention provides an electrode plate and a manufacturing method thereof, a super-capacitor and a lithium ion battery. The electrode plate comprises a current collector, a basicconductive layer positioned on the current collector, and a functional layer positioned on the basic conductive layer, wherein the functional layer is an active layer or a laminated structure of the active layer and a functional conductive layer; when the functional layer is the laminated structure, the number of the active layers is one greater than that of the functional conductive layers, and the active layers and the functional conductive layers are alternately laminated on the basic conductive layer in sequence; except the active layer adjacent to the basic conductive layer, one side, close to the current collector, of each of the functional conductive layers and other active layers in the functional layer comprises a plurality of bulges, and the bulges are embedded into at least onefilm layer, close to one side of the current collector, of the film layer to which the bulges belong and do not penetrate through the current collector. According to the technical scheme provided by the embodiment of the invention, the impedance value of the electrode plate can be obviously reduced, the longitudinal conductivity of the electrode plate is enhanced, and the power characteristic andcycle life of a device are improved.
Owner:SHANGHAI AOWEI TECH DEV

High-power chip flexible interconnection module and processing method

The invention relates to a high-power chip flexible interconnection module and a processing method. The invention provides a more advanced surface interconnection technology to replace traditional lead bonding, and aims to solve the problems of reduction of conductivity and bonding strength and the like caused by thermal mismatching and growth of intermetallic compounds in aluminum wire bonding and realize an interconnection technology with lower impedance value, higher thermal conductivity and longer service life. The contact area between flexible copper foil and a surface of the power chip is increased, the uniform distribution condition of heat on the surface of the chip is effectively improved, hot spots on the surface of the chip are reduced, and meanwhile, the current-carrying capacity is improved by 30% compared with that of a lead bonding process. The high-power chip low-loss flexible circuit interconnection technology is of great significance for promoting realization of deployment of a new-generation remote sensing common platform and a high-resolution earth observation satellite in the morning and promoting early application of a wide bandgap semiconductor device in an aerospace electronic product, and also providing a reference for continuous improvement of the performance of a commercial power module.
Owner:BEIJING SATELLITE MFG FACTORY

Data reading method for memory cell and sensitive amplifier used for multi-level cell (MLC)

The invention provides a data reading method for a memory cell and a sensitive amplifier used for a multi-level cell (MLC) flash memory. The method comprises the following steps: carrying out primary reading, applying read voltages to the memory cell and a first reference unit, and converting the current generated by the memory unit and the first reference unit into voltages; comparing the voltages of the two; if the preset condition is satisfied, judging the data state of the memory cell, and if not, carrying out secondary reading; lifting or reducing the read voltages applied to the memory cell and the residue (2n-2) numbered reference units except for the first reference unit according to the preset condition, and converting the current generated by the memory cell and the residue (2n-2) numbered reference units into voltages; comparing the voltages of the memory cell and the reference units and judging the data state of the memory cell; and finally outputting data information according to the judged data state. In the invention, the current variation range is small, and the difference between the obtained voltages is relatively stable, thus the data state can be accurately recognized, and the method of the invention has the advantage of reducing the reading time compared with the serial reading method.
Owner:GIGADEVICE SEMICON (BEIJING) INC
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