High-power chip flexible interconnection module and processing method

Abstract

The invention relates to a high-power chip flexible interconnection module and a processing method. The invention provides a more advanced surface interconnection technology to replace traditional lead bonding, and aims to solve the problems of reduction of conductivity and bonding strength and the like caused by thermal mismatching and growth of intermetallic compounds in aluminum wire bonding and realize an interconnection technology with lower impedance value, higher thermal conductivity and longer service life. The contact area between flexible copper foil and a surface of the power chip is increased, the uniform distribution condition of heat on the surface of the chip is effectively improved, hot spots on the surface of the chip are reduced, and meanwhile, the current-carrying capacity is improved by 30% compared with that of a lead bonding process. The high-power chip low-loss flexible circuit interconnection technology is of great significance for promoting realization of deployment of a new-generation remote sensing common platform and a high-resolution earth observation satellite in the morning and promoting early application of a wide bandgap semiconductor device in an aerospace electronic product, and also providing a reference for continuous improvement of the performance of a commercial power module.

Description

technical field [0001] The invention relates to a high-power chip flexible interconnection module and a processing method, belonging to the technical field of high-power chip manufacturing. Background technique [0002] In traditional power module products and power semiconductor discrete device products, the interconnection structure between power chip electrodes and modules or shells is as follows: figure 1 shown. The use of aluminum wire bonding technology to realize the electrical connection between the chip electrode and the packaging structure has the following problems: [0003] (1) Insufficient long-term reliability [0004] Large thermal expansion coefficient difference between aluminum and Si chips, aluminum is 25ppm / K, while silicon is 4ppm / K, due to large thermal expansion coefficient mismatch, may cause wire bond root root due to thermal stress after high and low temperature or power cycle Cracks appear, which may lead to cracking or even debonding of the bon...

AI Technical Summary

Problems solved by technology

[0011] Aiming at the problems of insufficient long-term reliability of traditional aluminum wire bonding and limited improvement of load capacity, this invention proposes a flexible interconnection module and processing method for high-power chips, which uses flexible circuit sintering interconnection instead of traditional aluminum wire bonding. Overcoming technical problems in traditional power chip aluminum wire bonded interconnection by adopting large-area nano-Ag sintered flexible circuit method

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