76 results about "Ion sputtering" patented technology

A crosslinked rubber article according to the present disclosure contains a crosslinked product of a fluorine-containing copolymer. When the crosslinked rubber article is subjected to a sputtering treatment by a method of test 1, the arithmetic average height Sa of the surface of the crosslinked rubber article after the sputtering treatment is greater than 1.6 μm, and the aspect ratio Str of the surface of the crosslinked rubber article after the sputtering treatment is 0.90 or less. Test 1: A crosslinked rubber article is placed on a sample table of an ion sputtering apparatus, and a distance between a placement surface of the crosslinked rubber article in the sample table and a target made of platinum is set to 35 mm. Then, the crosslinked rubber article is subjected to a sputtering treatment by setting the degree of vacuum in a sample chamber of the ion sputtering apparatus to 6 kPa and then performing discharge for 30 sec at a target additional current value of 25 mA.

The application discloses a preparation method of a VP@UiO-66-NH2 / Ag NPs composite SERS chip and application thereof in A beta protein detection, and is characterized by comprising the following steps: synthesizing a VP-graphite paper base by a chemical vapor transport method on a surface of a graphite paper to obtain a VP-graphite paper base; synthesizing a UiO-66-NH2 layer on the surface of the VP-graphite paper base by a solvothermal method to obtain a VP@UiO-66-NH2 composite base; and finally, placing the composite base in an ion sputtering instrument, uniformly sputtering silver nanoparticles on the surface of the composite base, taking out the composite base, and obtaining the VP@UiO-66-NH2 / Ag NPs composite SERS chip, wherein the VP@UiO-66-NH2 / Ag NPs composite SERS chip has the advantages of high sensitivity, good stability and uniformity, controllable preparation process, low cost, application in Alzheimer's disease biomarker detection, high specificity in identification and quantitative analysis of A beta 40 and A beta 42 proteins, fast response and good stability.

The application discloses a kind of hypersensitive coupling bionic strain sensors and preparation method thereof, belong to the field of strain sensor.The specific method is through coupling bionic arthropod crack receptor and helical growth divergent law of sunflower seed, design coupling bionic strain sensor structure, prepare flexible elastic substrate with micro-nano coupling bionic crack array using replication transfer method, and carry out ion sputtering and plate a layer of nano silver film, obtain the resistance layer deposited on flexible elastic substrate and micro-nano coupling bionic crack array.Finally, copper wire electrode is packaged on the surface of resistance layer, and a kind of coupling bionic strain sensor is obtained, which not only has ultrahigh sensitivity, but also good durability, rapid response time and recovery time, simple structure, and excellent performance in all aspects.

The invention provides an anti-ion sputtering sealing structure, which relates to the field of plasma technology application and comprises a metal cover plate, a vacuum cavity, a sealing ring and a ceramic ring. And three grooves are formed in the metal cover plate and are respectively used for placing and limiting the sealing ring, the ceramic ring and the vacuum cavity. The sealing ring is used for connecting the metal cover plate and the vacuum cavity in a sealed mode, the ceramic ring is placed between the plasma and the sealing ring, and the energy of the plasma reaching the sealing ring is effectively attenuated by increasing the refraction path of the plasma at the connecting gap. According to the invention, the ablation risk of the plasma to the sealing ring is reduced, and plasma pollution and vacuum rupture caused by damage of the sealing ring are prevented, so that the long-term stable operation of the ion source system is ensured.

The application belongs to the technical field of semiconductor material science and technology, and particularly relates to a large-area hexagonal boron nitride heteroepitaxial film on a sapphire substrate and a preparation method thereof. The technical scheme provides a large-area hexagonal boron nitride epitaxial film directly grown on a sapphire substrate. The preparation method adopts an ion beam assisted sputtering method. In the growth process, the main and auxiliary ion sources give high-energy ion sputtering respectively, so that high-energy B / N atoms cross the energy barrier of the preferred orientation between the B / N atoms and the substrate surface, form covalent bonding with the substrate surface, induce the hexagonal grid plane of the hexagonal boron nitride to extend vertically to the substrate surface, and thus obtain a large-area vertically-oriented hexagonal boron nitride epitaxial film. Compared with the common Van der Waals epitaxial growth method, the epitaxial method can effectively release stress, so that the bonding force between the hexagonal boron nitride film and the substrate surface is stronger, and the stability is better, and the hexagonal boron nitride film is suitable for being used as a template, a transition layer, a heat dissipation layer and the like of optoelectronic devices and electronic devices.

The invention specifically discloses an ion thruster acceleration grid probability life evaluation method based on coupling competitive failure, and relates to the technical field of aerospace propulsion system life evaluation. The method comprises the following steps: firstly, obtaining deterministic parameters and random parameters of a thruster acceleration grid assembly; then based on an ion sputtering corrosion theory, considering material loss caused by charge exchange ion bombardment of the acceleration gate, and establishing a coupling corrosion model of the thickness and aperture of the acceleration gate; thirdly, constructing a competitive failure model, and realizing numerical solution of competitive failure life by dynamically iterating a corrosion state and a failure criterion; and finally, independently repeated random sampling is carried out based on probability distribution of random parameters, the random sampling is substituted into the competitive failure model to obtain an acceleration grid simulation life sample set, and statistical analysis is carried out on the life sample set to obtain a probability life evaluation result. The method solves the problem of errors caused by independent modeling of structural failure and electronic reflux failure in the prior art, and is helpful for reducing the system operation risk and improving the reliability of a spacecraft.

The application discloses a kind of film layer etching rate determination method, specifically includes the following steps: (1) on the support layer substrate of known composition, adhere one or more coating to form a film;(2) accurately obtain the thickness value and characteristic element of each coating;(3) obtain the composition and chemical state information of the most surface layer element;(4) clean etching to film;(5) record etching time, etching area, etching mode and etching energy;(6) establish the function relationship of X-ray photoelectron spectrometer argon ion sputtering source to the etching rate of corresponding coating of film.The application mainly utilizes argon ion beam to bombard the surface of film layer, then through X-ray photoelectron spectrometer (XPS) and the calculation of function relationship, can obtain the element composition and chemical state information of specified depth in film layer, and establish the function relationship of X-ray photoelectron spectrometer argon ion sputtering source to the etching rate of corresponding coating of film.

1. The name of the design product: high vacuum ion sputtering instrument. 2. The use of the design product: instrument for material surface modification, thin film preparation and sample preparation, etc. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The utility model discloses a magnetic control fine adjustment interlocking mechanism, which relates to the technical field of plasma sputtering and is characterized in that a sputtering target is arranged below a mounting plate, a mounting hole is vertically formed in the mounting plate, and a mounting block is arranged in the mounting hole in a penetrating manner; the lifting interlocking assembly is arranged above the mounting plate, the lifting interlocking assembly is used for driving the mounting block to ascend and descend, and the lifting interlocking assembly can lock the mounting block; the magnetic control assembly is rotationally mounted below the mounting block, the magnetic control assembly comprises a magnetic control substrate and a plurality of magnetic parts, and the magnetic parts are detachably connected to the lower portion of the magnetic control substrate; the rotating assembly is connected above the mounting block and is used for driving the magnetic control assembly to rotate; the measuring assembly is connected to the mounting plate and used for measuring the height of the magnetic control substrate. According to the utility model, the distance between the sputtering target and the magnetic control assembly can be accurately controlled.

The invention discloses an optical fiber pluggable airtight photoelectric conversion module and a use method, an optical lens array is photoetched on a glass block, and guide holes are respectively formed in two ends of the array, so that the optical lens array is matched with an MT connector. In addition, metallization is achieved on four faces perpendicular to the optical lens array through ion sputtering, welding of the glass block and a ceramic tube shell of the photoelectric module is completed, and therefore air-tight sealing of an optical fiber outlet of the photoelectric module is achieved. Circuit wiring needed by the photoelectric module is achieved at black porcelain at the bottom of the ceramic tube shell, interconnection of circuits of components is achieved in a current-carrying welding mode, a bonding piece bonding mode and the like, the bottom of the tube shell is of a BGA structure, and the top of the tube shell is of parallel seam welding to achieve airtight sealing of a main cavity of the photoelectric module. Through the above structure, the optical fiber can be detached, so that the metalized optical fiber does not have a welding problem, uneven peripheral stress caused by welding is avoided, and the problem that the coupling positions of the optical fiber, a laser and a detector deviate in the welding process is solved.

The invention relates to the technical field of solar cells, and particularly discloses a low-temperature solder grid line silicon heterojunction solar cell and a preparation method thereof. According to the solar cell, an alloy film transition layer is arranged between the surface of a silicon heterojunction solar cell and a low-temperature solder grid line; the alloy film transition layer comprises the following components in percentage by mass: 95-100% of copper and / or nickel and 0-5% of tin; the alloy film transition layer grows by an ion sputtering deposition method, and the thickness of the transition layer is 20-100 nm; the low-temperature welding flux is low-melting-point alloy welding flux; the low-melting-point alloy comprises the following components in percentage by mass: 40-99% of tin, 0-40% of lead and 0-1% of copper. By applying the method, rare noble metal indium does not need to be introduced into the solder, and silver-free manufacturing of the SHJ solar cell can be achieved under the condition that the advantages of a silk-screen printing grid line preparation process are kept.

The present application relates to high temperature protective coating technical field, specifically to a coating which does not form needle-shaped phase with nickel-based alloy interface and a preparation method. The coating is composed of carbon interstitial nickel-based, cobalt-based or nickel-cobalt-based alloy and dispersed nano-carbide particles; the preparation method is prepared by regulating vacuum cathode arc plasma in-situ reaction, and the preparation steps include: ① the substrate is subjected to conventional grinding, polishing and oil removal pretreatment, ② the alloy target material is installed, vacuum is drawn and the substrate is subjected to ion sputtering cleaning, ③ the vacuum arc plasma with the coating target material as the cathode is ignited, ④ the workpiece surface is bombarded and activated by cation with energy of 300eV-1000eV, ⑤ the coating is formed on the workpiece surface by depositing the gas containing carbon elements through plasma activation reaction by regulating the partial pressure. The coating can avoid the precipitation of needle-shaped harmful phase at the interface with nickel-based high-temperature alloy, and the method has the advantages of simple and controllable process, suitable for batch preparation and the like.

This application provides an atomic deposition apparatus suitable for ion sputtering experiments, including a sputtering product deposition module, a support and position adjustment module, a tilt adjustment module, and a target fixing and beam signal acquisition module. This application addresses the problem that existing atomic deposition apparatuses primarily measure the atomic deposition rate inside ion thruster discharge chambers or sputtering coating chambers, making it difficult to accurately control ion incident conditions and measure the spatial distribution of sputtering products. The target fixing and beam signal acquisition module is mounted on the tilt adjustment module and located within the sputtering product deposition module. It also utilizes the support and position adjustment module as a base placed at the bottom of the vacuum chamber, supporting and driving the other modules to move horizontally and / or vertically.

1. The name of this design product: Ion sputtering coater. 2. Application of this design product: used for surface coating of non-conductive samples. 3. The key point of the design of this product lies in its shape. 4. The picture or photo that best illustrates the design points: three-dimensional picture.

The utility model belongs to the technical field of ion sputtering coating machines, and discloses a film thickness adjustable device of an ion sputtering coating machine, which comprises a vacuum coating chamber, a coating platform is arranged in the vacuum coating chamber, an ion beam sputtering composite coating mechanism body is arranged in the vacuum coating chamber, and the ion beam sputtering composite coating mechanism body is arranged in the vacuum coating chamber. A thickness adjusting assembly is mounted in the vacuum coating chamber and comprises a connecting plate, the connecting plate is mounted on the surface of the ion beam sputtering composite coating mechanism body, mounting plates are mounted on the bottom surface of the connecting plate, and a movable rod is rotationally connected between the two mounting plates; the surface of the movable rod is provided with a special-shaped baffle plate, and the special-shaped baffle plate is attached to a sputtering port of the ion beam sputtering composite coating mechanism body. The ion beam sputtering composite coating mechanism has the advantages that the coating thickness can be adjusted, manual observation is avoided, and the practicability is further improved.

The invention provides a sodium bismuth titanate-barium titanate-based energy storage ceramic material and a preparation method thereof, and relates to the field of dielectric energy storage ceramic materials. The chemical formula of the ceramic material disclosed by the invention is 0.6 (Bi < 0.5 > Na < 0.5 >) TiO < 3-(0.4-x >) BaTiO < 3-x > Bi (Mg < 2 > / 3Nb < 1 / 3 >) O3, and x is 0.08-0.12. The preparation method comprises the following steps: weighing Bi2O3, Na2CO3, BaCO3, TiO2, MgO and Nb2O5 according to a stoichiometric ratio, mixing with ethanol, carrying out ball milling, drying, grinding and calcining to obtain a primary product; adding ethanol into the primary product, carrying out secondary ball milling, and drying to obtain a secondary product; a binder is dropwise added into the second-stage product for granulation, then sieving, tabletting and sintering are conducted, and a ceramic wafer is obtained; and carrying out ion sputtering on the surface of the ceramic wafer, and then polishing the edge of the ceramic wafer to obtain the sodium bismuth titanate-barium titanate-based energy storage ceramic material. The ceramic material provided by the invention has both energy storage performance and excellent temperature stability, and solves the problem that an energy storage ceramic material in the prior art is difficult to obtain excellent energy storage performance and temperature stability at the same time.

The invention relates to a metallographic sample preparation method of multiplication material ceramic microspheres for a fusion reactor. The metallographic sample preparation method comprises the steps that the multiplication material ceramic microspheres for the fusion reactor are flatly laid at the bottom of a cold inlaying mold; a mixed solution of polyacrylic resin and a curing agent is added into the cold inlaying mold, and the mold is placed at the room temperature to wait for solidification forming; grinding and polishing the molded inlaid sample with the microspheres taken out by using abrasive paper on a grinding and polishing machine, so that the sections of the ceramic microspheres are exposed and smooth; the prepared H2O2 corrosive liquid is heated in a water bath kettle, after the H2O2 corrosive liquid is heated to 60-80 DEG C, the embedded sample is placed in the water bath kettle to be corroded for preset time, and the concentration of the H2O2 corrosive liquid is 10-40%. The preset time is 3-5 min; and taking out, washing with clear water, and coating in an ion sputtering instrument to obtain a sample. According to the method, the H2O2 corrosive agent with proper concentration is adopted, and specific parameters such as heating temperature and corrosion time in the chemical corrosion process are set, so that the problem of clearly observing the grain size of the proliferation material ceramic microspheres under a metallographic microscope is solved.

The present application relates to a coating for surface modification of metal materials, in particular to a sand-proof and fatigue-resistant integrated coating for surface strengthening of aluminum alloy and a preparation method. The technical problem that the existing coating structure for the surface of aluminum alloy cannot simultaneously consider sand-proof and fatigue-resistant performance is solved. The coating comprises a plasma etching layer, a metal ion implantation layer, a Ti metal transition layer and a TiN / Ti nano cycle layer which are sequentially stacked on the surface of the substrate in the thickness direction; the TiN / Ti nano cycle layer comprises n cycle layers; each cycle layer comprises a TiN ceramic layer and a Ti metal layer; in the plurality of cycle layers, the thickness of the Ti metal layer decreases layer by layer in the direction from the substrate to the outer surface of the coating, and the thickness of the TiN ceramic layer increases layer by layer in the direction from the substrate to the outer surface of the coating; the Ti metal transition layer and the TiN / Ti nano cycle layer are prepared by magnetic filter cathode vacuum arc sputtering; Ti ion sputtering layers are interposed in the Ti metal transition layer and the TiN / Ti nano cycle layer; and the preparation method of the coating is also provided.

The preparation method of the vanadium alloy comprises the steps that vanadium powder and alloy raw materials are mixed in proportion to form a mixture; placing the mixture in a vacuum furnace for pretreatment; smelting the mixture in a smelting furnace to form a melt; and the melt is cooled and demoulded, and the vanadium alloy is formed. The method is simple and efficient, and the formed vanadium alloy can effectively improve the helium ion sputtering resistance, so that the safety and reliability of the device are ensured.

The invention discloses a glove box capable of preventing a sample from absorbing water during sample preparation and a use method of the glove box. The glove box comprises a supporting structure and a cover body, a medicine bottle mounting position, a sample table mounting column, an air inlet and an air outlet are arranged on the top surface of the supporting structure, the air inlet is connected with an air supply port of the inflation device through a pipeline, the air outlet is connected with the gas recovery device, and the supporting structure is further provided with an ion sputtering instrument butt joint port; the cover body is arranged and covers the top surface of the supporting structure, two circular openings are formed in the surface of the cover body, rubber gloves are arranged at the circular openings, and the rubber gloves are sleeved with opening tightening rubber bands. By adopting the arrangement, the glove box can be matched with an ion sputtering instrument for use, and meanwhile, a sample can be prevented from absorbing water in the sample preparation process.

The application relates to a posture-orbit control thrust chamber body structure with coating protection and a preparation method thereof, and solves the technical problem that the preparation of the coating of a high-thrust high-performance posture-orbit control thrust chamber body is limited by the size of an ion sputtering furnace and the ion sputtering coating with better high-temperature resistance and oxidation resistance cannot be used. The posture-orbit control thrust chamber body structure with coating protection comprises a short body part and an extension section which are sequentially connected; an ion sputtering coating is arranged on the outer wall of the short body part; and a slurry sintering coating is arranged on the outer wall of the extension section, so that the ion sputtering coating can have good high-temperature resistance and oxidation resistance, and the requirement of segmented protection of different regions of the high-thrust high-performance posture-orbit control thrust chamber body can be met. The coating preparation method of the posture-orbit control thrust chamber avoids the problem that the base body of the posture-orbit control thrust chamber is not protected by the coating.

The manufacturing method of the glass film comprises the following steps: coating a scratch-resistant coating on a first surface of a transparent carrier to form a scratch-resistant layer; coating an ultraviolet-proof coating on the second surface of the transparent carrier to form an ultraviolet-proof layer, wherein the ultraviolet-proof coating comprises a metal or a metal oxide; forming a metal layer on the anti-ultraviolet layer through ion sputtering deposition; and forming a stripping layer on the metal layer. The manufacturing method of the glass film is simple, low in cost, easy to control and wide in applicability, and the manufactured film structure has good film-substrate binding force, high hardness, scratch resistance, wear resistance, ultraviolet resistance and high light transmittance.

The invention discloses a BGA gold plating method for a PCB and the PCB, and belongs to the technical field of printed circuit boards, and the BGA gold plating method for the PCB comprises the steps: firstly, forming a seed layer on the surface of a first substrate in a copper ion sputtering mode, and enabling only the seed layer in a BGA region to be exposed in a film layer coating and local film layer removing mode, according to the method, the seed layer of the BGA area is plated with gold, and finally, the residual film layer and the seed layer under the film layer are removed in sequence, so that accurate gold plating in the BGA area can be realized without influencing other areas, the condition that conductive wires are always left in a conductive wire pulling gold plating mode is avoided, and the problem that the conductive wire pulling mode is used for plating the BGA at present, so that the cost is low is solved. The processing flow is long; and the conductive wire is left.

The utility model belongs to the technical field of application of ultra-precise magnetic control ion sputtering instruments, and particularly discloses an angle-adjustable sample table of an ultra-precise magnetic control ion sputtering instrument. Comprising a table body, a PLC (Programmable Logic Controller), a lower circular fixed table, a metal ball, an upper circular movable supporting table, a circular material table, a sample groove, a group of vertical frame plates, a vertical hydraulic cylinder, a group of transverse plates, a tilt angle sensor mounting seat, a tilt angle sensor and the like, wherein the vertical hydraulic cylinder and the tilt angle sensor are respectively connected with the PLC. The device disclosed by the utility model has the beneficial effects that the lower circular fixed table, the circular groove of the lower circular fixed table, the metal ball, the upper circular movable supporting table, the circular groove of the upper circular movable supporting table and the like which are matched for use are utilized, and the vertical hydraulic cylinder, the tilt angle sensor and the PLC are combined, so that accurate and stable angle adjustment on a sputtered sample according to needs can be realized; the high-quality sputtering detection requirements of different sputtered samples are met; a split type multi-module structural design is adopted as a whole, so that assembly or maintenance is facilitated, and popularization is facilitated.

The present invention discloses a photoelectric material based on an ultrathin protein nanofilm and a preparation method thereof. By breaking the disulfide bonds of the protein, the protein undergoes a phase transition and self-assembles at the solid-liquid interface to form an ultrathin protein nanofilm with a secondary structure mainly composed of α-helix. A metal coating is then prepared by magnetron ion sputtering or a chemical method to obtain the photoelectric material. The preparation method of the ultrathin protein nanofilm of the present invention is simple and has good stability, light transmittance, and good non-toxic biocompatibility. Moreover, since the surface of the ultrathin protein nanofilm has multiple functional groups such as free thiol, carboxyl, and amino groups, stable adhesion to the metal coating can be achieved. The photoelectric material of the present invention can be used to prepare secret information devices, Raman enhancement devices, smart window devices, printed devices, and tactile sensors. The metal layer can maintain stable performance in various harsh environments.

The invention provides a preparation method of a semiconductor structure and the semiconductor structure, and particularly relates to the field of semiconductors. The preparation method of the semiconductor comprises the following steps: providing a substrate, wherein the substrate comprises a substrate, a gate structure formed on the substrate and ion doped regions respectively positioned in the substrate at two sides of the gate structure; forming a sacrificial layer on the surface of the substrate; performing high-energy ion sputtering treatment on the sacrificial layer; forming an initial stress layer on the surface of the sacrificial layer; and curing the initial stress layer to form a stress layer. According to the preparation method of the semiconductor structure, the sacrificial layer is formed and subjected to ion sputtering treatment, so that stress concentration points of the stress layer can be eliminated, and cracks are reduced.

The invention relates to the technical field of nano materials, and discloses a self-driven low-oxygen responsive Z-DNA targeted Janus nano motor and a preparation method thereof.The preparation method comprises the steps that firstly, an ammonia water solution and absolute ethyl alcohol are mixed and react with tetraethoxysilane to obtain a first solution, and the first solution is freeze-dried to obtain spherical MSN nano particles; preparing a chitosan solution; a second solution is obtained from the spherical MSN nano particles and gamma-glycidyl ether oxypropyl trimethoxy silane; adding a chitosan solution, chloroquine phosphate, anhydrous copper chloride and a hydrogen peroxide solution to obtain a third solution; adding an azo compound, freeze-drying, dispersing the obtained particles in absolute ethyl alcohol, dropwise adding on the surface of a silicon wafer to form a uniform film layer, and forming a platinum thin layer by using an ion sputtering instrument to obtain a nano motor CP-Chl (at) MPt; the problems that in the prior art, a targeting mechanism is lacked, a biological membrane cannot be actively penetrated, targeted intervention Z-DNA structure is lacked, the synergistic effect of ROS on cell membrane permeability and drug internalization is neglected, and the sterilization efficiency of an infected part is not high are solved.

The application discloses a preparation method of a gold nano array coupled photonic crystal microcavity based on a Tamm plasmon mode, and aluminum is subjected to oxidation treatment through a periodic variable voltage method and an aluminum base at a back surface is removed to prepare an aluminum oxide photonic crystal. Gold nano arrays are used to replace a traditional gold film structure of a light incident surface, gold is evaporated on an oxidation surface and an aluminum-removed surface of the aluminum oxide photonic crystal through ion sputtering, and then a gold nano array-aluminum oxide photonic crystal-gold film microcavity structure is obtained. The preparation method of the gold nano array coupled photonic crystal microcavity based on the Tamm plasmon mode makes the preparation process simpler and more efficient, is convenient and easy to control, optimizes the absorption intensity of the Tamm plasmon, and further provides a wider freedom degree for the regulation of the Tamm plasmon mode.

The present invention provides a method for preparing Ag / Au nanoparticles and a MIM structure. Gold and silver are used as the first and second target materials, respectively, and ion sputtering technology is used. The first target material is first sputtered and then the second target material is sputtered on the surface of a substrate composed of a chemically inert insulating material, or the second target material is first sputtered and then the first target material is sputtered. Gold nanoparticles and silver nanoparticles are evenly dispersed on the surface of the substrate. The substrate is then irradiated with an electron beam, and the beam current density of the electron beam is controlled at an order of magnitude. The irradiation time is 1 to 30 minutes, and Ag / Au nanoparticles in which silver nanoparticles merge, fuse, or coat gold nanoparticles are obtained. The method is simple and easy to implement, and a MIM structure of Ag / Au nanoparticles-substrate-Ag / Au nanoparticles is obtained by using the method.

This invention relates to the field of plasma source technology, and more particularly to a radio frequency coupled plasma source for use under positive pressure environments. The technical solution includes an ion source inlet interface connected to a gas source; an ion source chamber connected to the ion source inlet interface, with a connecting component fixed between the ion source inlet interface and the ion source chamber; an ion sputtering baffle fixedly installed at the bottom of the ion source chamber; a radio frequency power supply disposed on one side of the ion source chamber, with a coil installed between the ion source chamber and the radio frequency power supply; and a support mechanism for supporting the ion source chamber. This invention can meet the requirements for using an ion source under positive pressure environments, avoiding the influence of external pressure gas environments on the source. It satisfies both the operating conditions of the ion source under external positive pressure environments and the need for frequent replacement of the plasma chamber in radio frequency coupled plasma sources. It is low-cost and easy to maintain and replace.