46 results about "Ion sputtering" patented technology

A crosslinked rubber article according to the present disclosure contains a crosslinked product of a fluorine-containing copolymer. When the crosslinked rubber article is subjected to a sputtering treatment by a method of test 1, the arithmetic average height Sa of the surface of the crosslinked rubber article after the sputtering treatment is greater than 1.6 μm, and the aspect ratio Str of the surface of the crosslinked rubber article after the sputtering treatment is 0.90 or less. Test 1: A crosslinked rubber article is placed on a sample table of an ion sputtering apparatus, and a distance between a placement surface of the crosslinked rubber article in the sample table and a target made of platinum is set to 35 mm. Then, the crosslinked rubber article is subjected to a sputtering treatment by setting the degree of vacuum in a sample chamber of the ion sputtering apparatus to 6 kPa and then performing discharge for 30 sec at a target additional current value of 25 mA.

The application discloses a preparation method of a VP@UiO-66-NH2 / Ag NPs composite SERS chip and application thereof in A beta protein detection, and is characterized by comprising the following steps: synthesizing a VP-graphite paper base by a chemical vapor transport method on a surface of a graphite paper to obtain a VP-graphite paper base; synthesizing a UiO-66-NH2 layer on the surface of the VP-graphite paper base by a solvothermal method to obtain a VP@UiO-66-NH2 composite base; and finally, placing the composite base in an ion sputtering instrument, uniformly sputtering silver nanoparticles on the surface of the composite base, taking out the composite base, and obtaining the VP@UiO-66-NH2 / Ag NPs composite SERS chip, wherein the VP@UiO-66-NH2 / Ag NPs composite SERS chip has the advantages of high sensitivity, good stability and uniformity, controllable preparation process, low cost, application in Alzheimer's disease biomarker detection, high specificity in identification and quantitative analysis of A beta 40 and A beta 42 proteins, fast response and good stability.

The application discloses a kind of hypersensitive coupling bionic strain sensors and preparation method thereof, belong to the field of strain sensor.The specific method is through coupling bionic arthropod crack receptor and helical growth divergent law of sunflower seed, design coupling bionic strain sensor structure, prepare flexible elastic substrate with micro-nano coupling bionic crack array using replication transfer method, and carry out ion sputtering and plate a layer of nano silver film, obtain the resistance layer deposited on flexible elastic substrate and micro-nano coupling bionic crack array.Finally, copper wire electrode is packaged on the surface of resistance layer, and a kind of coupling bionic strain sensor is obtained, which not only has ultrahigh sensitivity, but also good durability, rapid response time and recovery time, simple structure, and excellent performance in all aspects.

The invention provides an anti-ion sputtering sealing structure, which relates to the field of plasma technology application and comprises a metal cover plate, a vacuum cavity, a sealing ring and a ceramic ring. And three grooves are formed in the metal cover plate and are respectively used for placing and limiting the sealing ring, the ceramic ring and the vacuum cavity. The sealing ring is used for connecting the metal cover plate and the vacuum cavity in a sealed mode, the ceramic ring is placed between the plasma and the sealing ring, and the energy of the plasma reaching the sealing ring is effectively attenuated by increasing the refraction path of the plasma at the connecting gap. According to the invention, the ablation risk of the plasma to the sealing ring is reduced, and plasma pollution and vacuum rupture caused by damage of the sealing ring are prevented, so that the long-term stable operation of the ion source system is ensured.

The application belongs to the technical field of semiconductor material science and technology, and particularly relates to a large-area hexagonal boron nitride heteroepitaxial film on a sapphire substrate and a preparation method thereof. The technical scheme provides a large-area hexagonal boron nitride epitaxial film directly grown on a sapphire substrate. The preparation method adopts an ion beam assisted sputtering method. In the growth process, the main and auxiliary ion sources give high-energy ion sputtering respectively, so that high-energy B / N atoms cross the energy barrier of the preferred orientation between the B / N atoms and the substrate surface, form covalent bonding with the substrate surface, induce the hexagonal grid plane of the hexagonal boron nitride to extend vertically to the substrate surface, and thus obtain a large-area vertically-oriented hexagonal boron nitride epitaxial film. Compared with the common Van der Waals epitaxial growth method, the epitaxial method can effectively release stress, so that the bonding force between the hexagonal boron nitride film and the substrate surface is stronger, and the stability is better, and the hexagonal boron nitride film is suitable for being used as a template, a transition layer, a heat dissipation layer and the like of optoelectronic devices and electronic devices.

The invention specifically discloses an ion thruster acceleration grid probability life evaluation method based on coupling competitive failure, and relates to the technical field of aerospace propulsion system life evaluation. The method comprises the following steps: firstly, obtaining deterministic parameters and random parameters of a thruster acceleration grid assembly; then based on an ion sputtering corrosion theory, considering material loss caused by charge exchange ion bombardment of the acceleration gate, and establishing a coupling corrosion model of the thickness and aperture of the acceleration gate; thirdly, constructing a competitive failure model, and realizing numerical solution of competitive failure life by dynamically iterating a corrosion state and a failure criterion; and finally, independently repeated random sampling is carried out based on probability distribution of random parameters, the random sampling is substituted into the competitive failure model to obtain an acceleration grid simulation life sample set, and statistical analysis is carried out on the life sample set to obtain a probability life evaluation result. The method solves the problem of errors caused by independent modeling of structural failure and electronic reflux failure in the prior art, and is helpful for reducing the system operation risk and improving the reliability of a spacecraft.

1. The name of the design product: high vacuum ion sputtering instrument. 2. The use of the design product: instrument for material surface modification, thin film preparation and sample preparation, etc. 3. The design points of the design product: in shape. 4. The picture or photo that best indicates the design points: perspective view 1.

The utility model discloses a magnetic control fine adjustment interlocking mechanism, which relates to the technical field of plasma sputtering and is characterized in that a sputtering target is arranged below a mounting plate, a mounting hole is vertically formed in the mounting plate, and a mounting block is arranged in the mounting hole in a penetrating manner; the lifting interlocking assembly is arranged above the mounting plate, the lifting interlocking assembly is used for driving the mounting block to ascend and descend, and the lifting interlocking assembly can lock the mounting block; the magnetic control assembly is rotationally mounted below the mounting block, the magnetic control assembly comprises a magnetic control substrate and a plurality of magnetic parts, and the magnetic parts are detachably connected to the lower portion of the magnetic control substrate; the rotating assembly is connected above the mounting block and is used for driving the magnetic control assembly to rotate; the measuring assembly is connected to the mounting plate and used for measuring the height of the magnetic control substrate. According to the utility model, the distance between the sputtering target and the magnetic control assembly can be accurately controlled.

The invention relates to the technical field of solar cells, and particularly discloses a low-temperature solder grid line silicon heterojunction solar cell and a preparation method thereof. According to the solar cell, an alloy film transition layer is arranged between the surface of a silicon heterojunction solar cell and a low-temperature solder grid line; the alloy film transition layer comprises the following components in percentage by mass: 95-100% of copper and / or nickel and 0-5% of tin; the alloy film transition layer grows by an ion sputtering deposition method, and the thickness of the transition layer is 20-100 nm; the low-temperature welding flux is low-melting-point alloy welding flux; the low-melting-point alloy comprises the following components in percentage by mass: 40-99% of tin, 0-40% of lead and 0-1% of copper. By applying the method, rare noble metal indium does not need to be introduced into the solder, and silver-free manufacturing of the SHJ solar cell can be achieved under the condition that the advantages of a silk-screen printing grid line preparation process are kept.

The present application relates to high temperature protective coating technical field, specifically to a coating which does not form needle-shaped phase with nickel-based alloy interface and a preparation method. The coating is composed of carbon interstitial nickel-based, cobalt-based or nickel-cobalt-based alloy and dispersed nano-carbide particles; the preparation method is prepared by regulating vacuum cathode arc plasma in-situ reaction, and the preparation steps include: ① the substrate is subjected to conventional grinding, polishing and oil removal pretreatment, ② the alloy target material is installed, vacuum is drawn and the substrate is subjected to ion sputtering cleaning, ③ the vacuum arc plasma with the coating target material as the cathode is ignited, ④ the workpiece surface is bombarded and activated by cation with energy of 300eV-1000eV, ⑤ the coating is formed on the workpiece surface by depositing the gas containing carbon elements through plasma activation reaction by regulating the partial pressure. The coating can avoid the precipitation of needle-shaped harmful phase at the interface with nickel-based high-temperature alloy, and the method has the advantages of simple and controllable process, suitable for batch preparation and the like.

This application provides an atomic deposition apparatus suitable for ion sputtering experiments, including a sputtering product deposition module, a support and position adjustment module, a tilt adjustment module, and a target fixing and beam signal acquisition module. This application addresses the problem that existing atomic deposition apparatuses primarily measure the atomic deposition rate inside ion thruster discharge chambers or sputtering coating chambers, making it difficult to accurately control ion incident conditions and measure the spatial distribution of sputtering products. The target fixing and beam signal acquisition module is mounted on the tilt adjustment module and located within the sputtering product deposition module. It also utilizes the support and position adjustment module as a base placed at the bottom of the vacuum chamber, supporting and driving the other modules to move horizontally and / or vertically.

The utility model belongs to the technical field of ion sputtering coating machines, and discloses a film thickness adjustable device of an ion sputtering coating machine, which comprises a vacuum coating chamber, a coating platform is arranged in the vacuum coating chamber, an ion beam sputtering composite coating mechanism body is arranged in the vacuum coating chamber, and the ion beam sputtering composite coating mechanism body is arranged in the vacuum coating chamber. A thickness adjusting assembly is mounted in the vacuum coating chamber and comprises a connecting plate, the connecting plate is mounted on the surface of the ion beam sputtering composite coating mechanism body, mounting plates are mounted on the bottom surface of the connecting plate, and a movable rod is rotationally connected between the two mounting plates; the surface of the movable rod is provided with a special-shaped baffle plate, and the special-shaped baffle plate is attached to a sputtering port of the ion beam sputtering composite coating mechanism body. The ion beam sputtering composite coating mechanism has the advantages that the coating thickness can be adjusted, manual observation is avoided, and the practicability is further improved.

The invention provides a sodium bismuth titanate-barium titanate-based energy storage ceramic material and a preparation method thereof, and relates to the field of dielectric energy storage ceramic materials. The chemical formula of the ceramic material disclosed by the invention is 0.6 (Bi < 0.5 > Na < 0.5 >) TiO < 3-(0.4-x >) BaTiO < 3-x > Bi (Mg < 2 > / 3Nb < 1 / 3 >) O3, and x is 0.08-0.12. The preparation method comprises the following steps: weighing Bi2O3, Na2CO3, BaCO3, TiO2, MgO and Nb2O5 according to a stoichiometric ratio, mixing with ethanol, carrying out ball milling, drying, grinding and calcining to obtain a primary product; adding ethanol into the primary product, carrying out secondary ball milling, and drying to obtain a secondary product; a binder is dropwise added into the second-stage product for granulation, then sieving, tabletting and sintering are conducted, and a ceramic wafer is obtained; and carrying out ion sputtering on the surface of the ceramic wafer, and then polishing the edge of the ceramic wafer to obtain the sodium bismuth titanate-barium titanate-based energy storage ceramic material. The ceramic material provided by the invention has both energy storage performance and excellent temperature stability, and solves the problem that an energy storage ceramic material in the prior art is difficult to obtain excellent energy storage performance and temperature stability at the same time.

The invention relates to a metallographic sample preparation method of multiplication material ceramic microspheres for a fusion reactor. The metallographic sample preparation method comprises the steps that the multiplication material ceramic microspheres for the fusion reactor are flatly laid at the bottom of a cold inlaying mold; a mixed solution of polyacrylic resin and a curing agent is added into the cold inlaying mold, and the mold is placed at the room temperature to wait for solidification forming; grinding and polishing the molded inlaid sample with the microspheres taken out by using abrasive paper on a grinding and polishing machine, so that the sections of the ceramic microspheres are exposed and smooth; the prepared H2O2 corrosive liquid is heated in a water bath kettle, after the H2O2 corrosive liquid is heated to 60-80 DEG C, the embedded sample is placed in the water bath kettle to be corroded for preset time, and the concentration of the H2O2 corrosive liquid is 10-40%. The preset time is 3-5 min; and taking out, washing with clear water, and coating in an ion sputtering instrument to obtain a sample. According to the method, the H2O2 corrosive agent with proper concentration is adopted, and specific parameters such as heating temperature and corrosion time in the chemical corrosion process are set, so that the problem of clearly observing the grain size of the proliferation material ceramic microspheres under a metallographic microscope is solved.

The present application relates to a coating for surface modification of metal materials, in particular to a sand-proof and fatigue-resistant integrated coating for surface strengthening of aluminum alloy and a preparation method. The technical problem that the existing coating structure for the surface of aluminum alloy cannot simultaneously consider sand-proof and fatigue-resistant performance is solved. The coating comprises a plasma etching layer, a metal ion implantation layer, a Ti metal transition layer and a TiN / Ti nano cycle layer which are sequentially stacked on the surface of the substrate in the thickness direction; the TiN / Ti nano cycle layer comprises n cycle layers; each cycle layer comprises a TiN ceramic layer and a Ti metal layer; in the plurality of cycle layers, the thickness of the Ti metal layer decreases layer by layer in the direction from the substrate to the outer surface of the coating, and the thickness of the TiN ceramic layer increases layer by layer in the direction from the substrate to the outer surface of the coating; the Ti metal transition layer and the TiN / Ti nano cycle layer are prepared by magnetic filter cathode vacuum arc sputtering; Ti ion sputtering layers are interposed in the Ti metal transition layer and the TiN / Ti nano cycle layer; and the preparation method of the coating is also provided.

The application relates to a posture-orbit control thrust chamber body structure with coating protection and a preparation method thereof, and solves the technical problem that the preparation of the coating of a high-thrust high-performance posture-orbit control thrust chamber body is limited by the size of an ion sputtering furnace and the ion sputtering coating with better high-temperature resistance and oxidation resistance cannot be used. The posture-orbit control thrust chamber body structure with coating protection comprises a short body part and an extension section which are sequentially connected; an ion sputtering coating is arranged on the outer wall of the short body part; and a slurry sintering coating is arranged on the outer wall of the extension section, so that the ion sputtering coating can have good high-temperature resistance and oxidation resistance, and the requirement of segmented protection of different regions of the high-thrust high-performance posture-orbit control thrust chamber body can be met. The coating preparation method of the posture-orbit control thrust chamber avoids the problem that the base body of the posture-orbit control thrust chamber is not protected by the coating.

The manufacturing method of the glass film comprises the following steps: coating a scratch-resistant coating on a first surface of a transparent carrier to form a scratch-resistant layer; coating an ultraviolet-proof coating on the second surface of the transparent carrier to form an ultraviolet-proof layer, wherein the ultraviolet-proof coating comprises a metal or a metal oxide; forming a metal layer on the anti-ultraviolet layer through ion sputtering deposition; and forming a stripping layer on the metal layer. The manufacturing method of the glass film is simple, low in cost, easy to control and wide in applicability, and the manufactured film structure has good film-substrate binding force, high hardness, scratch resistance, wear resistance, ultraviolet resistance and high light transmittance.

The invention provides a preparation method of a semiconductor structure and the semiconductor structure, and particularly relates to the field of semiconductors. The preparation method of the semiconductor comprises the following steps: providing a substrate, wherein the substrate comprises a substrate, a gate structure formed on the substrate and ion doped regions respectively positioned in the substrate at two sides of the gate structure; forming a sacrificial layer on the surface of the substrate; performing high-energy ion sputtering treatment on the sacrificial layer; forming an initial stress layer on the surface of the sacrificial layer; and curing the initial stress layer to form a stress layer. According to the preparation method of the semiconductor structure, the sacrificial layer is formed and subjected to ion sputtering treatment, so that stress concentration points of the stress layer can be eliminated, and cracks are reduced.

The invention relates to the technical field of nano materials, and discloses a self-driven low-oxygen responsive Z-DNA targeted Janus nano motor and a preparation method thereof.The preparation method comprises the steps that firstly, an ammonia water solution and absolute ethyl alcohol are mixed and react with tetraethoxysilane to obtain a first solution, and the first solution is freeze-dried to obtain spherical MSN nano particles; preparing a chitosan solution; a second solution is obtained from the spherical MSN nano particles and gamma-glycidyl ether oxypropyl trimethoxy silane; adding a chitosan solution, chloroquine phosphate, anhydrous copper chloride and a hydrogen peroxide solution to obtain a third solution; adding an azo compound, freeze-drying, dispersing the obtained particles in absolute ethyl alcohol, dropwise adding on the surface of a silicon wafer to form a uniform film layer, and forming a platinum thin layer by using an ion sputtering instrument to obtain a nano motor CP-Chl (at) MPt; the problems that in the prior art, a targeting mechanism is lacked, a biological membrane cannot be actively penetrated, targeted intervention Z-DNA structure is lacked, the synergistic effect of ROS on cell membrane permeability and drug internalization is neglected, and the sterilization efficiency of an infected part is not high are solved.

The application discloses a preparation method of a gold nano array coupled photonic crystal microcavity based on a Tamm plasmon mode, and aluminum is subjected to oxidation treatment through a periodic variable voltage method and an aluminum base at a back surface is removed to prepare an aluminum oxide photonic crystal. Gold nano arrays are used to replace a traditional gold film structure of a light incident surface, gold is evaporated on an oxidation surface and an aluminum-removed surface of the aluminum oxide photonic crystal through ion sputtering, and then a gold nano array-aluminum oxide photonic crystal-gold film microcavity structure is obtained. The preparation method of the gold nano array coupled photonic crystal microcavity based on the Tamm plasmon mode makes the preparation process simpler and more efficient, is convenient and easy to control, optimizes the absorption intensity of the Tamm plasmon, and further provides a wider freedom degree for the regulation of the Tamm plasmon mode.

This invention relates to the field of plasma source technology, and more particularly to a radio frequency coupled plasma source for use under positive pressure environments. The technical solution includes an ion source inlet interface connected to a gas source; an ion source chamber connected to the ion source inlet interface, with a connecting component fixed between the ion source inlet interface and the ion source chamber; an ion sputtering baffle fixedly installed at the bottom of the ion source chamber; a radio frequency power supply disposed on one side of the ion source chamber, with a coil installed between the ion source chamber and the radio frequency power supply; and a support mechanism for supporting the ion source chamber. This invention can meet the requirements for using an ion source under positive pressure environments, avoiding the influence of external pressure gas environments on the source. It satisfies both the operating conditions of the ion source under external positive pressure environments and the need for frequent replacement of the plasma chamber in radio frequency coupled plasma sources. It is low-cost and easy to maintain and replace.

The invention discloses a high-sensitivity optical fiber temperature magnetic sensor based on a suspended core optical fiber and a preparation method thereof, and the sensor comprises a hollow suspended core optical fiber, a first multi-mode optical fiber and a second multi-mode optical fiber which are welded at the two ends of the hollow suspended core optical fiber, and a gold film which is formed on the surface of the hollow suspended core optical fiber through ion sputtering. The polytetrafluoroethylene tube is sleeved on the hollow-core suspended-core optical fiber, and the magnetic fluid is filled between the hollow-core suspended-core optical fiber and the polytetrafluoroethylene tube. The optical fiber temperature magnetic sensor has good sensitivity and large measuring range in synchronous monitoring of magnetic field intensity and temperature field. Meanwhile, the parallel Mach-Zehnder interference and the plasma resonance phenomenon of the optical fiber temperature magnetic sensor inhibit the influence caused by the spatial difference of the measurement position of a serial sensor, and the optical fiber temperature magnetic sensor has the advantages of small size, simple structure, excellent performance and the like.

The invention discloses a method for remarkably improving the wear resistance of a TiAlSiCrN coating. The method comprises the following steps: S1, firstly, preparing a Ti target and a TiAlSiCr alloy target; s2, pretreating the matrix sample to remove oil stain and dust on the surface of the matrix sample, and then mounting the cleaned matrix sample on a sample disc; s3, starting magnetron sputtering coating equipment, vacuumizing, introducing Ar gas, and carrying out Ar ion sputtering cleaning on the surface of the matrix sample; s4, preparing a Ti metal transition layer on the surface of the matrix sample by using magnetron sputtering coating equipment; s5, continuously preparing a TiAlSiCr metal transition layer on the outer surface of the Ti metal transition layer; and S6, the TiAlSiCrN coating continues to be prepared on the outer surface of the TiAlSiCr metal transition layer. According to the method, the'film collapse 'phenomenon of the TiAlSiCrN coating is remarkably improved, and then the wear resistance of the coating is improved.

The invention discloses a characterization method for a nano structure of an X-ray photoetching grayscale mask, and relates to the technical field of micro-nano processing. The method comprises the following steps: before preparing a focused ion beam cross section, sequentially depositing a multi-layer composite protective film on the surface of a to-be-detected X-ray photoetching gray scale mask nanostructure, and sequentially comprising a first carbon layer, a first tungsten layer, a second carbon layer and a second tungsten layer from bottom to top; according to the structure, pollution of the tungsten layer is isolated through the carbon layer, the purity of interface component analysis is ensured, meanwhile, mechanical support and ion sputtering resistance are provided through the tungsten layer, the original three-dimensional shape of the nanostructure is protected, finally, focused ion beam cutting is carried out, and detection and analysis are carried out through a scanning electron microscope-energy dispersion X-ray spectrometer. Accurate characterization of the depth, the side wall morphology and the elemental components of the X-ray photoetching grayscale mask nanostructure is realized.

The invention discloses a culture dish marking method for a cell photoelectric correlation experiment and application of the culture dish marking method, and the method comprises the following steps: placing a stainless steel carrying net with a Marker pattern in a target area at the bottom of a culture dish, and taking the stainless steel carrying net as a mask plate; putting the culture dish with the mask plate into a metal ion sputtering instrument, taking platinum as a sputtering target material, and starting the metal ion sputtering instrument to carry out ion sputtering so as to form a Marker formed by a platinum plating layer at the bottom of the culture dish; and taking out the culture dish and removing the mask plate to obtain the culture dish with the Marker for the cell photoelectric correlation experiment. The method is easy and convenient to operate, low in cost, high in mark transfer rate and safe to use, no glass slag is left after resin separation, and the separated resin embedding block does not damage a slicing knife during slicing.

The invention discloses a method for in-situ synthesis of graphene nanoribbons on the surface of a semiconductor. The method realizes direct surface synthesis of a monatomic layer nanostructure on semiconductor titanium dioxide. The method comprises the following steps: further annealing by adopting ion sputtering and circulating the operation to modify the surface of a semiconductor substrate, and carrying out two-step synthesis reaction of the graphene nanobelt on the modified semiconductor surface. According to the method, n-type self-doping occurs on the originally inert titanium dioxide surface through repeated argon ion sputtering and high-temperature annealing steps, then specific precursor molecule brominated dianthracene is heated and evaporated to the heated surface for reaction, and the form of the generated graphene nanobelt can be represented through a scanning tunneling microscope. According to the method, the catalytic inertia of the semiconductor surface on the nanobelt synthesis reaction can be overcome, so that the relatively long graphene nanobelt with controllable width can be directly generated on the semiconductor.

The utility model relates to the technical field of ion sputtering instruments, and discloses an ion sputtering instrument with an adjustable rotary sample holder, which comprises an ion sputtering instrument main body, the top of the ion sputtering instrument main body is fixedly connected with a fixed base, and the top of the fixed base is fixedly connected with a protective cover. A connecting pipe is installed at the left end of the ion sputtering instrument body, a fixing plate is arranged at the upper end of the fixing base, a sputtering nozzle is fixedly connected to the bottom of the fixing plate, a rotating assembly is arranged in the protection cover, a fixing assembly is arranged at the upper end of the rotating assembly, and the rotating assembly comprises a motor. The transmission rod is driven by the motor to rotate, so that the sample holder rotates, different positions of a sample are sputtered, the electric push rod is started, the output end of the electric push rod pushes the second connecting plate to move, the sample holder is inclined, the sample is sputtered at different angles, and the sputtering effect of the sample is improved.

The present application relates to a kind of vanadium oxide / copper reverse phase model catalyst and its preparation method and application, preparation method includes: to Cu (111) single crystal is ion sputtering and first annealing, obtain atomic level clean Cu (111) surface;In oxygen atmosphere, metal V is deposited to Cu (111) surface, second annealing is carried out under vacuum condition, obtain vanadium oxide / copper reverse phase model catalyst;The time of deposition is 1min-60min;The absolute pressure of vacuum condition is 5x10 ‑ 10 Mbar-1x10 ‑9 Mbar.The present application removes surface impurities by ion sputtering and annealing to Cu (111) single crystal, promotes vanadium oxide to deposit evenly;By depositing metal V in oxygen atmosphere and annealing under vacuum condition, vanadium oxide is deposited evenly on the surface of Cu (111) single crystal;Different deposition time can obtain different structure vanadium oxide, which is beneficial to analyze the structure-activity relationship of vanadium oxide at atomic scale.

1. Name of the product in this design: Ion sputtering instrument. 2. Purpose of this design: Analytical instrument for use in the field of scanning electron microscopy sample preparation. 3. The key design feature of this product is its shape. 4. The image or photograph that best illustrates the design's key points: 3D view 1. 5. Other situations requiring explanation: Other explanation: Area A is made of transparent material.

The invention relates to a monatomic layer nano-porous CuSe two-dimensional atomic crystal and a preparation method thereof.The atomic crystal is formed by alternately arranging Cu atoms and Se atoms according to the stoichiometric ratio of 1: 1 to form a hexagonal honeycomb lattice completely equivalent to hBN, and the corresponding preparation method comprises the steps that argon ion sputtering and annealing are conducted on a single crystal to obtain a copper single crystal substrate; (2) evaporating Se powder at 120-125 DEG C, and depositing on a copper substrate to form a CuSe single-layer precursor; (3) heating to 100-400 DEG C and annealing to preliminarily eliminate defects; (4) evaporating the K or Na simple substance for 2-5 minutes, heating again and preserving heat for 30 minutes, realizing complete elimination of twin boundaries through alkali metal induced twin boundary migration, and forming honeycomb-shaped nanopores; and (5) the alkali metal is completely desorbed through annealing, and the monoatomic layer CuSe single crystal with the macroscopic area being 0.25 cm < 2 > or above is obtained. The method is simple in process and low in temperature, and a new technical path is provided for preparation of large-area single crystal two-dimensional materials.