62 results about "Beam density" patented technology

The invention relates to a tobacco filter tip and relative preparation, wherein it is formed by spinning the lactic acid polymer resin, drawing, coiling and shaping, while the line density is 2-6dtex, the beam density is 3-6ktex, the coil number is 15-30n/25mm. And it uses the adhesive method similar acetate fabric. Therefore, its polymer structure and large specific area can support the adsorption on organic, and filter the solid particle.

A method for the elimination of image speckles in a scanning laser projection is suggested, in which a phase hologram is used for dividing the illumination beam of the projector into partial beams. The partial beams are heterodyned again on the image screen within the image element (pixels) to be projected in such a way that differing speckle patterns are formed which average each other out in the eye of the viewer over time and/or space. Thus, a device is provided especially for the laser projection which substantially eliminates or reduces the speckles at the viewer. However, the beam form and the beam density are hardly or not changed.

Said invented belongs to nano material in situ characterization field. Said invented method contains putting nano line in organic solvent organic solvent, after ultrasonic dispersion 10-30 minute becoming suspension, dropping on metal grid coated with 60-120 nm collodion supporting film to make nano attached at supporting film, fixing metal grid on sample holder and putting in transmission electron microscope, measuring nano line unstretched length and diameter, adjusting transmission electron microscope beam voltage beam voltage as 80 KV to 400 KV and beam density as 20th power of 10 to 8X30th power of 10 electron/square centimeter second, to make collodion supporting film and nano line generating deformation, real time in situ recording nano line structural changes in deformation process, measuring nano line length line length and diameter after deformation, calculating nano length and diameter ratio and maximum strain quantity. Said invented has low cost and simple technology, capable of revealling one dimension nano line mechanical property from nano and atom level.

Based on anatomy recognition from three-dimensional live imaging of a volume, one or more portions (204, 208) of the volume are selected in real time. In further real time response, live imaging or the portion(s) is performed with a beam density (156) higher than that used in the volume imaging. The one or more portion may be one or more imaging plane selected for optimal orientation in making an anatomical measurement (424) or display. The recognition can be based on an anatomical model, such as a cardiac mesh model. The model may be pre-encoded with information that can be associated with image locations to provide the basis for portion selection, and for placement of indicia (416, 420, 432, 436) displayable for initiating measurement within an image provided by the live portion imaging. A single TEE or TTE imaging probe (112) may be used throughout. On request, periodically or based on detected motion of the probe with respect to the anatomy, the whole process can be re-executed, starting back from volume acquisition (S508).

The invention relates to a surface electrification simulation test system and a method for satellite tail regions, and belongs to the test field. The system comprises a medium and low energy electronic gun, a three-dimensional transmission mechanism, a surface potentiometer, lamp filaments, a plasma diagnostic system, a Kaufmann ion source, a vacuum-pumping system, a vacuum chamber and a personal computer (PC). The method comprises that a satellite component is placed in the vacuum chamber to vacuumize the vacuum chamber; the Kaufmann ion source and the medium and low energy electronic gun are opened, and grid accelerating voltages, ion beams and electronic beams of the Kaufmann ion source and beam density and energy of the medium and low energy electronic gun are set; the plasma diagnostic system is used for diagnosing produced plasma environments; and the three-dimensional transmission mechanism drives the surface potentiometer to measure surface charging potentials in the satellite tail region. By means of the surface electrification simulation test system and the method for satellite tail regions, plasma environment simulation can be performed on satellite tail region environments, and the charging simulation test of the satellite component tail region can be performed.

A low visual noise, jitterized pulse width modulation brightness control circuit is provided. The circuit uses a brightness control signal generating unit to receive a brightness adjusting signal and to generate a brightness control signal in response to the brightness adjusting signal. The brightness control pulse signal has a duty cycle or frequency varying in a predetermined range. An inverter coupled to the brightness control signal generating unit drives the fluorescent lamp in response to the brightness control pulse signal to reduce the visual interference due to the adjustment of the current beam density.

A radar apparatus that focuses a subset of transmit beams within a field of view (FOV) is provided. The radar apparatus has a phased array transmitter that is operable to generate a transmit beam within the FOV, and a phased array receiver that is operable to receive a receive beam reflected from within the FOV. The apparatus also has a radar controller with an electronic circuit and electronic memory, the electronic memory having a plurality of pre-calculated beam density curves. The radar controller is operable to execute each of the plurality of pre-calculated beam density curves and steer at least one transmit beam generated from a particular executed beam density curve towards a sub-area of the FOV.

The invention discloses an antibiotic stainless steel preparing method of double ionic injecting method, which comprises the following steps: putting the disposed stainless steel substrate in the ionic injector to proceed dual ionic injection at 1.0*10-4-1.5*10-4 Pa vacuum chamber pressure, 50-150keV ionic injecting energy, 1*1016-1*1018ions/cm2 injecting dose, 20-80 uA per cm2 ionic beam density for 30-180 min; proceeding antibiotic disposal after injecting at 400-950 deg.c for 1-10 h; utilizing martensite or austenite or ferrite as disposed stainless steel substrate; setting Cu+Ag or Ag+Zn or Cu+Zn as double antibiotic ion; making the injecting layer quality at 0.1-30 wt percent of double antibiotic ion quality.

An Echelle spectrometer arrangement (10) with internal order separation contains an Echelle grating (34) and a dispersing element (38) for order separation so that a two-dimensional spectrum having a plurality of separate orders (56) can be generated, an imagine optical system (18, 22, 28, 46), a flat-panel detector (16), and predispersion means (20) for predispersing the radiation into the direction of traverse dispersion of the dispersion element (38). The arrangement is characterized in that the predispersion means (20) comprise a predispersion element which is arranged along the optical path behind the inlet spacing (12) inside the spectrometer arrangement. The imaging optical system is designed in such a manner that the predispersed radiation can be imaged onto an additional image plane (24) which does not have any boundaries in the predispersion direction and which is arranged along the optical path between the predispersion element (20) and the echelle grating (34). Optical means (20, 68) in the area of the predispersed spectrum are arranged to influence the spatial and/or the spectral beam density distribution on the detector (16).

In the plant cultivation using artificial light, light can be effectively irradiated to the lower parts of leaves even with highlight irradiation. The light device for plant cultivation comprises a main light source of monochromatic light or mixed color which can emit a wavelength within the range of 400-700nm and has over 200Mumol/m2/s light quantum beam density of photosynthesis, and a far-red light source emitting far-red light. The main light source and the far-red light source include semiconductor light-emitting elements.

Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.

This invention provides a preparation method for hafnium thin film materials. A dual ion beam epitaxy apparatus with the function of mass separation and characteristics of energetic ion deposition is adopted, and in the condition of low purity requirement, low-cost hafnium chloride serves as raw materials is sputtered onto a sanitized substrate with single beam of pure isotopic low-energy argon ions. First, a thin film of hafnium nitride as block layer and buffer layer preventing reactions between substrate and hafnium ion is prepared from consequent pure isotopic low-energy hafnium ion beam and nitrogen ion beam. Next, hafnium film is deposited by means of single pure isotopic low-energy hafnium ion beam epitaxy. By exactly controlling the energy of hafnium ion beam, the amount of deposition agent, beam density, beam shape and deposition temperature, low-cost deposition and low-temperature epitaxy of hafnium which has a high melting point and is difficult to purify can be realized with high purity and high crystallization quality in ultravacuum cultivation room. The preparation method in this invention is convenient to modulate and optimized and is economical for manufacturing hafnium thin films used in semiconductor technology.

The invention discloses a semicircular rake-shaped ion thruster beam divergence angle test device. A Faraday probe is fixed on a semicircular rake, the semicircular rake is a semi-circular unenclosedarc structure and is connected with a driving assembly through a rotation assembly, under the driving action of the driving assembly, a semi-circular framework can rotate around a semi-circular centerline of the framework, a plume area is scanned, beam density of different positions of the ion thruster plume area can be tested through a test control assembly, an ion thruster beam divergence anglecan be acquired through calculation. The device is advantaged in that beam density of the multiple positions of the plume area can be simultaneously tested, multiple measurement points are distributed, test data reliability is high, and the device is quite suitable for measuring beam divergence angles of electrical propulsion thrusters such as ion thrusters and Hall thrusters.

The invention discloses a laser long-distance wireless charging device based on a rotating emission lens. The device uses a method of controlling the laser output direction by controlling the reflection angle of a mirror instead of laser movement in the prior art. The motor load and power consumption are reduced, the laser control precision is increased, and the size and weight of the laser long-distance wireless charging device based on a rotating emission lens are reduced. With laser as a carrier, the device has the characteristics of long transmission distance, high transmission efficiency, small receiver size, high charging speed and efficiency, adaptability to small electronic equipment, and the like. The beam density and wavelength of an 808nm semiconductor laser and a 1064nm diode pump solid-state laser adopted by the device match the energy gap width of gallium arsenide (GaAs) and indium gallium arsenic (InGaAs) photocell panels respectively. The device has the characteristics of high photoelectric conversion efficiency and low heat loss.

The invention relates to the technical field of proton adsorbed dose research, and specifically relates to a high-energy proton beam density distribution testing device. The device comprises a vacuum cavity, a Faraday cup, a multi-dimensional moving platform, a shielding box and a static electrometer, wherein the Faraday cup is fixed in the vacuum cavity through the multi-dimensional moving platform, and is enabled to be opposite to a proton beam in the vacuum cavity. The Faraday cup is connected with the input end of the static electrometer in the shielding box, and a grounding end of the static electrometer and the Faraday cup are connected with a side wall of the vacuum cavity through grounding lines. A motor controller in the shielding box is connected with the multi-dimensional moving platform, and can control the multi-dimensional moving platform to move. The device provided by the invention can test the density distribution of the high-energy proton beam in the vacuum cavity, and can achieve the comprehensive assessment of a charge environment in an electronic sample room. The impact on the device from the external interference is small, and the device can effectively detect the density distribution of the high-energy proton beam.

A method for using ion implantation to implant phosphorous or arsenic impurities into shallow source/drain regions or into polysilicon electrodes used in devices having shallow source/drain electrodes. A phosphorous source having an abundance of P₂+ ions is used in an ion beam system adjusted to select P₂+ ions. Since each ion contains two phosphorous atoms the ion beam requires twice the beam energy and half the beam density. This provides good wafer throughput and improved source life. An arsenic source having an abundance of As₂+ ions can be substituted for the solid phosphorous source resulting in a beam of As₂+ ions.

The invention relates to a method for enhancing the performance of an ECR (Electron Cyclotron Resonance) plasma source, and belongs to the application field of a low-temperature plasma source. The principle of the invention lies in that the original source of space electrons is a small quantity of free electrons in a resonance region of the existing ECR, electrons generated by gas ionization are source of the electrons when plasma discharge is formed, the electron density is limited when equilibrium is achieved, and the improvement of plasma parameters is restricted. On the basis of the existing ECR plasma source, a method of injecting electrons into the resonance region space in a compulsive and active manner is adopted. On the basis of the existing electron source, a lot of thermal electrons are generated by using a thermionic cathode, and the thermal electrons enter the resonance space under the control of an electric field passing through the resonance region, so that the electrondensity of the resonance region is greatly improved. Since the electron density of the resonance region is greatly improved, the ECR ionization efficiency is further enhanced, and the performance indexes such as the beam density of the ECR plasma source are improved.

The invention discloses a method for improving uniformity of ion beams of a large-parameter ion source. The method comprises steps of S1: arranging a grid net with lead-out holes, installing the grid net in a beam outlet position of an ion source discharge chamber, testing uniformity of beam density and drawing a beam density distribution graph A; S2: adjusting distribution of the lead-out holes in the grid net, adjusting distribution of the lead-out holes in the grid net according to the beam density distribution graph A, installing the grid net with adjusted lead-out holes in the same beam outlet position of the same ion source discharge chamber, testing uniformity of the beam density and then drawing a beam density distribution graph B; S3: adjusting the distribution of the lead-out holes in the grid net for the second time, and according to the beam density distribution graph B, finely adjusting the distribution of the lead-out holes in the grid net; and S4: installing the grid net: the final grid net is installed so that uniformity of the ion beams of the ion source can satisfy requirements. The method is advantaged by simple principles, simple operation and capability to reduce cost.

An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.

This invention relates to rotors of a spoke-like motor and its manufacturing method including a stator, multiple T shape posts installed radially in the stator and mutually isolated in gaps with the stator to the peripheral direction and rotors plug with permanent magnets installed among the posts, in which, a non-magnetic yoke is connected with one side of the multiple posts on the central part of the rotor and the rotor of a spoke like motor is manufactured by a screw method to stop part of the magnetic beam passing through the yoke to increase the beam density between the stator and the rotor to increase the moment.

This invention provides a preparation method for zirconium thin films. A dual ion beam epitaxy apparatus with the function of mass separation and characteristics of energetic ion deposition is adopted and zirconium chloride of which purity is not highly required serves as raw materials and is sputtered to a sanitized substrate with single isotopic pure low-energy argon ion beam. First, a thin film of zirconium nitride as block layer and buffer layer preventing reactions between zirconium ion and the substrate is prepared with the consequent isotopic pure low-energy zirconium ion beam and nitrogen ion beam, and then a zirconium film is deposited by epitaxy of single isotopic pure low-energy zirconium ion beam. By exactly controlling the energy of zirconium ion beam, the amount of deposition agents, beam density, beam shape and growing temperature, low-cost deposition and low-temperature epitaxy of zirconium which has a high melting point and is difficult to purify can be realized in ultravacuum cultivation room with high purity and high crystallization quality. This technique is convenient to modulate and optimized and is economical to manufacture zirconium thin films.