26 results about "Beam density" patented technology

The invention discloses a self-constrained transverse extension ion optical lens device, and belongs to the technical field of cluster ion lens devices. The invention discloses a self-constrained transverse extension ion optical lens device which comprises a cuboid vacuum cavity and an ion lens device. The ion lens device comprises an entrance slit of an ion optical lens, an exit slit of the ion optical lens and an electrode group; the electrode group comprises a conical plate electrode group and a parallel plate electrode group; a crack at the head end of the conical plate electrode group forms an inlet slit of the ion optical lens, the tail end of the conical plate electrode group is connected with the head end of the parallel plate electrode group, and a crack at the tail end of the parallel plate electrode group forms an outlet slit of the ion optical lens; one side of the cuboid vacuum cavity is provided with a cluster beam generation device outlet, and the ion lens device is arranged in the cuboid vacuum cavity. Under the condition that the beam density in the prior art is kept unchanged, the cluster beam intensity entering and leaving the ion optical part is increased, and the cluster yield is improved.

The invention discloses a novel ion transmission focusing device, and belongs to the technical field of ion transmission. The flow limiting device comprises a flow limiting hole and an octupole rod device, each flow limiting hole is a metal plate with a small hole in the center, the two flow limiting holes form a vacuum differential cavity, and certain direct-current voltage is applied to the flow limiting holes. The octupole rod device comprises two insulating positioning rings and eight conical electrode rods which are arranged at equal intervals to form a cone shape, the eight conical electrode rods are fixed through the insulating positioning rings, and the two ends of the octupole rod are connected with an ion source outlet and a mass selector inlet respectively; every four adjacent electrodes are connected through a copper sheet to form two electrodes, and the two electrodes apply two radio frequency voltages with the same amplitude and opposite phases through a power supply. The ion transmission system can be used for focusing and transmission of cluster beams, and effectively improves the beam density in a low vacuum environment. The whole device is simple in structure, easy to machine and low in cost.

The invention discloses a cluster generation device which comprises a cluster generation device front end, a cluster generation device nozzle end and an air inlet pipe of the cluster generation device. The cluster generation device front end comprises an upper condensation chamber transverse plate, a lower condensation chamber transverse plate, two parallel side plates and an air inlet side plate; an air inlet pipe of the cluster generation device penetrates through the air inlet side plate and enters the cavity at the front end of the cluster generation device; the nozzle end of the cluster generation device comprises an upper nozzle inclined plate, a lower nozzle inclined plate, an upper nozzle outlet transverse plate, a lower nozzle outlet transverse plate and an outlet slit of the cluster generation device; and a gap between the upper nozzle outlet transverse plate and the lower nozzle outlet transverse plate forms an outlet slit of the cluster generation device. According to the invention, under the condition that the beam density in the prior art is kept unchanged, the cross section area through which the cluster beam passes is enlarged, so that the throughput of the cluster beam and the intensity of the cluster beam are enhanced.

The embodiment of the invention discloses an ion source online detection method and device, electronic equipment and a storage medium, and relates to the technical field of ion sources, and the method comprises the steps: receiving an ion beam emitted by an ion source, and obtaining a first current signal and a second current signal based on the ion beam measurement; the first current signal is measured by moving the Faraday cup along a horizontal axis, and the second current signal is measured by the Faraday cup under at least one bias voltage; performing inversion according to the first current signal and a space response function of the Faraday cup to obtain beam density distribution of the ion source; and / or, according to the second current signal and the spatial response function, performing inversion to obtain ion energy distribution of the ion source; the spatial response function is used for representing the probability that the ion beam is collected after entering the Faraday cup; and carrying out on-line detection on the ion source based on the beam density distribution and / or the ion energy distribution. The embodiment of the invention is suitable for carrying out online detection on the large-size ion source, the detection mode is simple, and the cost is relatively low.

The utility model relates to a kind of diffraction waveguide light beam density regulation and control devices based on birefringence effect.The diffraction waveguide light beam density regulation and control devices based on birefringence effect include: waveguide substrate, made of material with birefringence effect;Coupling-in port, set in the incident plane of waveguide substrate, for coupling incident light;Coupling-out port, set in the exit plane of waveguide substrate, for coupling transmission light;Temperature regulation module, set in the side of waveguide substrate, for controlling the temperature of waveguide substrate, adjusting the propagation path of TE mode incident light and TM mode incident light inside waveguide substrate.The above-mentioned device utilizes the different diffraction angles of TE mode incident light and TM mode incident light due to different refractive indices, increases the propagation path width of light inside waveguide substrate, and improves the beam transmission density.Meanwhile, the temperature of waveguide substrate can be accurately controlled by temperature regulation module, to realize dark area distribution programmable and beam density dynamic optimization.

The invention provides a dynamic progressive micro-discharge polishing method for a grid assembly of an ion thruster, and relates to the technical field of space electric propulsion. According to the method, under the normal beam extraction working condition of the ion thruster, voltage between grids and extraction beam density are gradually increased in a staged mode, the controllable micro-discharge phenomenon on the surfaces of the grids is induced, and local high-temperature plasma generated by micro-discharge is used for conducting in-situ removal on burrs on the edges and the surfaces of grid holes. By optimizing the voltage-beam collaborative loading path, uniform etching and ablation of burrs are realized, and the surface quality of the grid electrode is remarkably improved. The method can be directly implemented after the ion thruster is assembled, disassembly or chemical treatment is not needed, and the method has the advantages of being high in process compatibility, high in efficiency and free of pollution.

A method may include receiving a beam profile function, derived from a beam density of an ion beam along a substrate plane, and generating a mirror function, based upon the beam profile function, wherein a sum of the mirror function and beam profile function generates a flat beam distribution. The method may include receiving a grid pattern for an electrode of an electrode assembly, the grid pattern comprising an array of hole locations, and calculating a normalized beam current as a function hole location for the array of hole locations. The method may further include generating an adjusted set of radii as a function of hole location for the array of hole locations based upon the mirror function and the normalized beam current, and generating an electrode assembly having an array of holes, based upon the grid pattern and the adjusted set of radii.

A depth sensor is provided. The depth sensor includes: one or more light sources configured to provide a plurality of light beams; and one or more optical structures, the one or more optical structures coupled to the one or more light sources. The one or more optical structures are configured to receive the plurality of light beams. At least one of the one or more light sources or the one or more optical structures is configured to non-uniformly distribute the plurality of light beams in a vertical field of view (FOV) such that the vertical FOV includes a dense region and a sparse region. The dense region of the vertical FOV has a higher beam density than the sparse region of the vertical FOV, and the depth sensor does not include a mechanically movable part configured to scan light.

The utility model discloses a light curtain protection mechanism of a high-speed laser cutting machine, and belongs to the technical field of light curtain protection devices. The light curtain protection mechanism of the high-speed laser cutting machine comprises a mounting bottom plate, an adjusting base is arranged on the mounting bottom plate, a first lead screw is arranged in the adjusting base, an emitter box body and a receiver box body are meshed on the first lead screw, and second lead screws are arranged in the emitter box body and the receiver box body. According to the light curtain protection mechanism of the high-speed laser cutting machine, through double adjustment of the first lead screw and the second lead screw, accurate control over the width, the height and the light beam density of a light curtain is achieved, different cutting requirements are met, the synchronous transmission design of the gear connecting rod telescopic frame ensures that the distance between the transmitter body and the receiver body is evenly adjusted, and the cutting efficiency is improved. The positioning precision and stability of the light curtain system are improved, deformation or missing detection of the light curtain is avoided, the multi-beam array design can cover a larger dangerous area, and protection blind areas are reduced.

The invention provides a method for calculating the beam height of an ion implanter. The method comprises the following steps: acquiring a beam scanning position sequence and a corresponding actually measured beam current value; calculating a current change rate set between adjacent scanning positions; determining a starting critical position and an ending critical position of the wafer completely covered by the beam current based on the current change rate; and calculating the effective beam height according to the space coordinate difference of the two critical positions. Whether the beam density is abnormal or not during injection can be judged through the beam height value.

A method may include receiving a beam profile function, derived from a beam density of an ion beam along a substrate plane, and generating a mirror function, based upon the beam profile function, wherein a sum of the mirror function and beam profile function generates a flat beam distribution. The method may include receiving a grid pattern for an electrode of an electrode assembly, the grid pattern comprising an array of hole locations, and calculating a normalized beam current as a function hole location for the array of hole locations. The method may further include generating an adjusted set of radii as a function of hole location for the array of hole locations based upon the mirror function and the normalized beam current, and generating an electrode assembly having an array of holes, based upon the grid pattern and the adjusted set of radii.

The invention discloses a CMOS image sensor and a manufacturing method thereof. The method comprises the following steps: S1, determining the current intensity of a target ion beam: adjusting the current intensity of the ion beam to obtain a plurality of groups of ion beam current intensities and corresponding beam current densities, and forming a fitting curve; determining the current intensity of the target ion beam according to the beam density corresponding to the lowest point or the lower point of the fitting curve; s2, providing a substrate with a pixel region; and S3, ions are injected into the pixel region of the substrate through an ion injection process to form a doped region, and the ion injection process adopts the target ion beam current intensity to carry out ion injection. Compared with an existing injection method adopting low ion beam current intensity, the method has the advantages that injection is performed by adopting relatively higher ion beam current intensity on the basis of the requirement of low beam current density, damage to crystal lattices is smaller, the WP performance of the image sensor is remarkably improved, the injection time is shortened due to the higher ion beam current intensity, and the productivity is improved.

The invention provides an electron beam device. Wherein the electron beam device comprises: a filament connected as a cathode to a negative high voltage and configured to generate an electron beam; the extraction electrode is in positive high voltage relative to the lamp filament and is configured to extract electrons from the emitting surface of the lamp filament to form electron beams; and the focusing lens is configured to adjust the size of the half field angle of the electron beam so as to generate light spots with different sizes and different beam densities on the surface of the to-be-detected sample, so that charges, generated by the imaging equipment, of different conditions on the surface of the to-be-detected sample are eliminated. The electron beam device can eliminate charges of different conditions on the surface of the sample to be detected, improves the imaging quality of imaging equipment, guarantees the accuracy of image information, is suitable for various different charge conditions, and effectively enlarges the application range. Charge of a specific area on the surface of the to-be-detected sample can be eliminated, positions sensitive to electron beams and light are prevented from being damaged, and the performance of the to-be-detected sample is guaranteed.

The invention relates to the technical field of material experiments, in particular to a linear plasma material detection device which comprises a sample fixing assembly, a sample table and a fixing assembly, the sample fixing assembly comprises a water-cooling four-way assembly, a sample table and a fixing assembly, and the water-cooling four-way assembly comprises a first cylinder and at least one lateral cylinder which extend in the irradiation direction of a plasma beam; the first end of the first cylinder is connected with the plasma generation device, the first cylinder comprises a first side wall, a second side wall and a first cavity formed between the first side wall and the second side wall in a spaced mode, the first cavity is connected with the first water cooling assembly, the lateral cylinder penetrates through the side wall of the first cylinder, and the detection assembly is communicated with the experiment cavity through the lateral cylinder; the fixing assembly is used for fixing a sample to the irradiation position of the plasma beam, and the sample table is used for abutting against the sample and can cool the sample. Therefore, the problem that the temperature of the sample is too high due to the fact that higher plasma beam density is adopted in the plasma-driven permeation experiment process is solved.

The present invention discloses a method for measuring the concentration profile of impurity bare nuclei using active spectroscopy, comprising: step 1, obtaining the beam density of a neutral beam during its travel; step 2, obtaining the ratio of the number density of particles in the excited state to the ground state in the neutral beam atoms; step 3, calculating the charge exchange recombination radiation rate coefficient of the neutral beam atoms and the impurity ions based on the obtained ratio of the number density of particles in the excited state to the ground state in the neutral beam atoms; step 4, measuring the active spectrum intensity of the impurity ions, and calculating the impurity ion concentration profile distribution in combination with the obtained beam density and charge exchange recombination radiation rate coefficient. This method calculates the profile distribution of the impurity bare nucleus concentration through the absolutely calibrated active spectrum intensity of the impurity ions, the neutral beam density, and the charge exchange recombination radiation rate coefficient, thereby improving the measurement of impurity concentration and providing the necessary physical parameters and experimental data support for further research on the control, transport, and internal physical mechanisms of plasma.

A metrology system is provided for use with a movement system that moves an end tool. The metrology system includes a sensor configuration, a light beam source configuration and a processing portion. The light beam source configuration directs a first pattern of light beams and a second pattern of light beams to light beam sensors to indicate a position and orientation of the light beam source configuration. The first pattern of light beams has a lower density of light beams as compared to the second pattern of light beams. Measurement signals from the light beam sensors are processed to determine a position and orientation of the light beam source configuration. The first pattern light beams and the second pattern light beams have at least one different characteristic (e.g., wavelength, polarity, timing, etc.) that enables the first pattern light beams to be distinguished from the second pattern light beams.

The present invention discloses a method for studying the irradiation damage behavior of a magnesium-based fuel matrix under simulated service conditions. The method comprises the following steps: using SRIM software to respectively calculate the penetration depths of Mg+ and He+ of different energies in a magnesium alloy; preparing a target material capable of adjusting a certain beam density of Mg+; extracting the vacuum of an irradiation target chamber, setting the neutron injection rate required for the irradiation experiment according to the SRIM calculation results, and simultaneously injecting Mg+ and He+ ion beams into the sample; using FIB to prepare transmission electron microscope samples along the irradiation depth of the irradiated sample for characterizing the irradiation damage behavior of the magnesium-based fuel matrix caused by neutron irradiation and fission gas; and by using He+ and Mg+ dual-beam ion coordinated irradiation of magnesium alloy samples, the method can effectively and conveniently realize the study of the irradiation damage behavior of the Mg alloy fuel matrix material under service conditions, and simultaneously realize the rapid screening of heat-resistant Mg alloy systems for fuel matrices.

The application discloses a three-dimensional laser scanning beam density precision regulation and control method based on a galvanometer dynamic regulation and control, and belongs to the technical field of three-dimensional laser scanning. The method comprises the following steps: performing initial three-dimensional laser scanning on a target region to obtain initial point cloud data; distributing grid coordinates to the point cloud; dynamically setting laser beam density and beam spacing according to parameter identification region types; analyzing the region according to the set parameters to generate a spiral scanning path; converting the path into a galvanometer control signal to control the laser beam to scan along the path; and precisely regulating laser parameters according to the scanning result. The method solves the technical problem that traditional three-dimensional laser scanning cannot adjust the spatial distribution density of the light beam in real time and cannot meet the differentiated precision structure surface complete scanning of the scene. The method realizes three-dimensional laser scanning beam density precision regulation and control, improves scanning precision and efficiency, reduces redundant data, and meets the scanning requirements of roadway surrounding rock, geological structure and other scenes.

The invention relates to a novel radiochromic diaphragm calibration device and a use method, which are suitable for application of a high-beam-density particle accelerator. The device comprises a metal foil for scattering a particle beam, an RCF calibration bracket, an RCF sample to be detected and a detector for detecting the flow intensity of a particle flow. The RCF calibration support is of a plane-arc curved surface composite structure, a metal foil is fixed to the front plane and used for scattering particle beams, a clamping groove with a marked angle is formed in the arc curved surface and used for containing a to-be-measured RCF sample, and a notch is reserved at the position of a specific angle and used for a detector to measure the flow intensity of scattering particles. The beam intensity is reduced through Rutherford scattering of the metal foil, theoretical calculation is combined with actual measurement data comparison of a detector, a correction coefficient is obtained, and accurate dose calibration of the RCF sample is achieved. By adjusting the material, the thickness and the irradiation time of the metal foil, the wide-range calibration from 10Gy to 10000 Gy is realized. The method is not limited by too high flow intensity of the accelerator, and has the advantages of high flow intensity adaptability, high calibration efficiency, flexibility in use, large dynamic range, adjustable measuring range and the like.

This invention discloses a dynamic monitoring and adjustment method and system for the preparation process of ultra-high performance concrete, relating to the field of concrete preparation technology. The method includes the following steps: an image acquisition device and a laser particle size analyzer work together to capture images of the area where the laser beam illuminates the aggregate particles in real time. This invention, by introducing a combination of image acquisition and morphological analysis, accurately extracts the geometric shape features of the aggregate particles and quantifies their irregularity, thereby achieving adaptive adjustment of the beam density. This allows the laser particle size analyzer to adjust the beam density in real time according to the morphological complexity of the particles, ensuring accurate capture of the scattering signals from irregular particles. This significantly improves the particle size measurement accuracy of the laser particle size analyzer for aggregates with complex morphologies, enhancing the monitoring capability and reliability of particle size distribution. Especially when dealing with highly irregular particles, it effectively improves the accuracy and stability of the measurement.

The invention discloses a three-dimensional laser scanning beam density precise regulation and control method based on galvanometer dynamic regulation and control, and belongs to the technical field of three-dimensional laser scanning, and the method comprises the steps: carrying out the initial three-dimensional laser scanning of a target region, and obtaining initial point cloud data; grid coordinates are distributed to the point cloud; identifying the area type according to parameters, and dynamically setting the laser beam density and the light beam spacing; analyzing the area according to set parameters, and generating a spiral scanning path; converting the path into a galvanometer control signal, and controlling the laser beam to scan along the path; laser parameters are accurately regulated and controlled according to a scanning result; the technical problems that the spatial distribution density of light beams cannot be adjusted in real time in traditional three-dimensional laser scanning, and differential precision structural surface complete scanning of a scene is difficult to meet are solved. According to the invention, precise regulation and control of the three-dimensional laser scanning beam density are realized, the scanning precision and efficiency are improved, redundant data are reduced, and the technical effects of meeting the scanning requirements of scenes such as roadway surrounding rocks and geologic structures are achieved.

The invention discloses an ultra-high performance concrete preparation process dynamic monitoring and adjusting method and system, and relates to the technical field of concrete preparation, and the method comprises the following steps: enabling an image acquisition device and a laser particle size analyzer to cooperatively work, and capturing an image of an aggregate particle area irradiated by laser in real time; by introducing the technology of combining image acquisition and morphological analysis, the geometrical shape characteristics of aggregate particles are accurately extracted, and the irregularity of the particles is quantified, so that the self-adaptive adjustment of the light beam density is realized, the laser particle size analyzer can adjust the light beam density in real time according to the morphological complexity of the particles, and the detection accuracy is improved. The scattering signal of irregular particles can be accurately captured, the particle size measurement precision of the laser particle size analyzer on aggregate particles with complex forms is remarkably improved, the monitoring capability and reliability of particle size distribution are enhanced, and particularly, the measurement accuracy and stability can be effectively improved when particles with high irregularity are processed.

The invention discloses a copper surface nanocrystallization interface preparation method based on vacuum sputtering, and the method comprises the following specific steps: S1, substrate pretreatment: sequentially carrying out acetone and ethanol ultrasonic cleaning and nitrogen blow-drying on an oxygen-free copper substrate, then placing the oxygen-free copper substrate in a vacuum cavity, and carrying out Ar plasma etching to remove surface oxides and form a nanoscale rough surface; s2, magnetron sputtering deposition is conducted, specifically, a direct-current magnetron sputtering system is adopted, metal nanoparticles are deposited on the surface of the substrate, the sputtering power is 50-250 W, and high-purity Ar serves as working gas; s3, electron beam irradiation: carrying out electron beam treatment on the deposited sample under the conditions that the beam density is 1-5 A / cm, the irradiation time is 5-30 minutes and the acceleration voltage is 5-20 kV; and S4, annealing treatment is conducted in the reducing atmosphere. The porosity is reduced, and the density and uniformity of a sintered body are improved.

The invention relates to the technical field of photoelectric cathode manufacturing, and provides a high-purity cesium-based photoelectric cathode cesium film large-area uniform molecular beam evaporation deposition method, which adopts a high-purity cesium elementary substance cesium source and is matched with an ultrahigh vacuum establishment and maintenance technology to realize long-acting repeated use of the cesium source; a multi-temperature-zone gradient evaporation design is combined with an adaptive PID algorithm and a thermal coupling compensation mechanism to realize cross-zone temperature cooperative control; through a thermodynamics-fluid mechanics dual-mode deposition control strategy, modes are dynamically switched according to the deposition rate, thermal inertia disturbance is inhibited in the high-speed stage, viscous resistance is corrected in the low-speed stage, and the beam density stability is guaranteed; a generator and a cesium source chamber, an evaporator and a spray pipe mechanism which are connected in series are designed to form continuous and stable molecular beam deposition; according to the method, the problems of poor film uniformity, rate instability and end point misjudgment in the traditional process are solved, large-area or single-time multi-substrate cesium film deposition can be realized, and industrial-grade stability, laboratory-grade precision and mass production-grade efficiency are achieved.

An ultrashort pulse laser having a multipass cell (2) which has at least two mirrors (3) arranged such that the at least two mirrors (3) repeatedly reflect laser pulses, wherein the multipass cell (2) has a partial beam density of at least 0.2 / cm3.

To provide a metrology system that is provided for use with a movement system that moves an end tool.SOLUTION: The metrology system includes a sensor configuration, a light beam source configuration and a processing portion. The light beam source configuration directs a first pattern of light beams and a second pattern of light beams to light beam sensors to indicate a position and orientation of the light beam source configuration. The first pattern of light beams has a lower density of light beams as compared to the second pattern of light beams. Measurement signals from the light beam sensors are processed to determine a position and orientation of the light beam source configuration. The first pattern light beams and the second pattern light beams have at least one different characteristic (e.g., wavelength, polarity, timing, etc.) that enables the first pattern light beams to be distinguished from the second pattern light beams.SELECTED DRAWING: Figure 1