This invention discloses a mid-to-far-
infrared narrowband light source for MEMS, comprising a substrate, a suspension support layer, a heating
resistor layer, and a
radiation functional layer. The substrate is a
silicon substrate. The suspension support layer is fixed to the substrate by anchor points. The heating
resistor layer is disposed on the suspension support layer, and the
radiation functional layer is disposed above the heating
resistor layer. The suspension support layer and the heating resistor layer have Y-shaped grooves forming a Y-beam suspension structure. The Y-beam suspension structure is connected to the substrate by anchor points to form
thermal isolation. The surface of the
radiation functional layer has a periodically arranged array of micro / nano structures. The period and size of the micro / nano structure array are on the same
order of magnitude as the target
infrared wavelength, forming an artificial interface with specific equivalent
refractive index and
resonance characteristics to achieve
narrowband spectral output. This invention can reduce heat conduction from the radiation region to the substrate, reduce heat
conduction loss, reduce
heat leakage, improve
thermal isolation performance, and reduce
heat capacity, thereby enabling the beam to heat up and cool down rapidly.