8results about How to "Simple process control" patented technology

The invention discloses a preparation method of an arfamarana key intermediate, which comprises the following steps: carrying out nucleophilic addition reaction on a compound I and 1-[3-chloro-5-(trifluoromethyl) phenyl]-2, 2, 2-trifluoroethanone under the action of an organic solvent A and alkali to obtain a compound II; dissolving the compound II in an organic solvent B, adding concentrated sulfuric acid, carrying out intramolecular dehydration and cyanogen hydrolysis, and after the reaction is finished, cooling to room temperature for crystal growing to obtain a compound III; dissolving the compound III in an organic solvent C, carrying out intramolecular cyclization and ester hydrolysis reaction on the compound III and hydroxylamine hydrochloride under the action of a certain amount of sodium hydroxide aqueous solution, and after the reaction is finished, collecting a water phase and adjusting the pH value of the water phase, so as to obtain the key intermediate of arfampanaga. The reaction in each step has a high conversion rate, the purity of the prepared arfamarin intermediate is high, and powerful support and guarantee are provided for preparation of high-purity arfamarin.

The application provides a homogenous multi-channel thin film transistor and a preparation method thereof. The preparation method comprises the following steps: preparing a gate electrode and a gate dielectric layer on a substrate in sequence; using an atomic layer deposition process to deposit at least two InGaO sub-channel layers on the gate dielectric layer in a direction away from the gate dielectric layer in sequence, and stacking the InGaO sub-channel layers to form a channel layer; during the deposition of each InGaO sub-channel layer, the same type of Ga precursor source and different types of In precursor source are used, or the same type of In precursor source and different types of Ga precursor source are used, so that each InGaO sub-channel layer has different carrier concentrations; during the deposition of each InGaO sub-channel layer, the sub-cycle periods are the same; performing a patterning treatment on the channel layer; preparing a source electrode and a drain electrode on the patterned channel layer to obtain the homogenous multi-channel thin film transistor. The application can simplify the preparation process, improve the interlayer interface quality, and does not need high-temperature annealing treatment.

The application relates to the field of semiconductors and discloses a cell structure of a silicon carbide MPS diode and the silicon carbide MPS diode, which comprises a silicon carbide substrate, a silicon carbide epitaxial layer located on the silicon carbide substrate, and a plurality of cells located on the silicon carbide epitaxial layer. The outer contour of the projection area of each cell on the silicon carbide epitaxial layer is a regular hexagon. The plurality of cells comprise at least two of a first cell, a second cell and a third cell. The boundary line between the Schottky junction region of the first cell and the first PN junction region is circular, and the boundary line between the Schottky junction region and the second PN junction region is a regular hexagonal deformation. The boundary line between the Schottky junction region of the second cell and the first PN junction region is a regular hexagonal deformation, and the boundary line between the Schottky junction region and the second PN junction region is circular. The boundary line between the Schottky junction region of the third cell and the first PN junction region and the second PN junction region is circular. The anti-surge capacity is improved, and the problem that the anode metal is easily melted and fails when a surge occurs is solved.

The utility model belongs to the technical field of radio frequency tags, and particularly relates to an antenna structure and a radio frequency identification tag. The dipole radiation arm comprises a linear part, bending line parts symmetrically arranged on two sides of the linear part, and sheet-shaped parts arranged on the outer sides of the bending line parts; the inductance loop comprises a chip connection point, and the chip connection point is sunken in the upper edge of the inductance loop; and the feeding point is the coupling position of the inductance loop and the dipole radiation arm, the lower edge of the inductance loop is overlapped with the straight line part, and the width of the lower edge of the inductance loop is consistent with that of the straight line part. The utility model is used for solving the problems of the existing UHF label in the roll-to-roll production process and the technical problem that the signal transmission capability cannot be maintained in various media at the same time in the application process.

The invention relates to the field of display, and discloses a crystal film screen based on a composite transparent electrode and a preparation method thereof, the crystal film screen comprises a transparent substrate, a composite transparent electrode layer and a lamp bead array; the composite transparent electrode layer is attached to the surface of the transparent substrate, and the lamp bead array is bonded to the side, away from the transparent substrate, of the composite transparent electrode layer. The transparent conductive oxide layer is filled in the crack gap through a magnetron sputtering process and compactly covers the surface, so that a continuous conductive path is formed, excellent balance between high light transmittance and low resistivity is realized, the non-periodic structure characteristic of disordered arrangement of a metal cracking network is utilized, and the light transmittance is improved. The moire phenomenon generated by regular wiring and a pixel array in a traditional photoetching process is effectively avoided from the physical principle, and the definition and the visual effect of a display picture are remarkably improved. In addition, the oxide layer on the surface can effectively block water and oxygen and protect an internal metal network from oxidation corrosion, so that the chemical stability of the electrode is improved.

This invention discloses a genetically engineered Bacillus subtilis strain for producing the spore-like amino acid Porphyra-334, its construction method, and its applications, belonging to the fields of microbial metabolic engineering and synthetic biology. Using Bacillus subtilis WB600 as a chassis, this strain: 1) knocks out the competing transaldolase gene ywjH, blocking precursor competition and byproduct synthesis pathways; 2) systematically introduces the key gene cluster NlmysABCD from Nostoc lindy NIES-25 for Porphyra-334 synthesis; 3) knocks out the key regulatory genes spo0A and spoIIIE controlling spore formation, thereby blocking the cell differentiation process and redistributing metabolic resources to the biosynthesis of the target product. The finally constructed engineered strain achieved a Porphyra-334 yield of 2.71 g / L under shake-flask fermentation conditions and a yield of 10.07 g / L under top-fermentation conditions.

This application discloses a sealing material, its preparation method, and its application, relating to the field of solid oxide fuel cell sealing technology. The sealing material includes: material A, by mass percentage, comprising: BaO 50%~70%, B2O3 10%~20%, Al2O3 5%~20%, SiO2 5%~20%, CaO 0%~15%; and material B, by mass percentage, comprising: SiO2 40%~60%, TiO2 5%~15%, CaO 5%~15%, Na2O 0%~15%, BaO 0%~10%, Al2O3 0%~8%, K2O 0%~5%. Material A and material B are co-fired to form a double-layer composite sealing structure, comprising a ceramic water-proof layer and a gas-sealing layer nested from the inside out. The sealing material proposed in this application meets the medium and low temperature sintering range of 700~750℃, and can still be adapted to various battery materials and coatings below the working temperature of 600℃; moreover, the sintering range is controllable, and the wetting performance under various coatings is good, with wetting angles all less than 90°, effectively improving the adaptability of the sealing material.

The invention relates to the technical field of biological fermentation process monitoring, and particularly discloses biological fermentation gas online monitoring equipment which comprises an outer box body, the outer box body is composed of a high box part a and a short box part b, a detection box and an analysis host are installed in the high box part a, and an electromagnetic valve used for controlling gas inlet is installed on the side wall, close to the short box part b, of the detection box; a sensor array which transmits data with the analysis host is mounted at one end, far away from the electromagnetic valve, in the detection box, a high-voltage arc generator is mounted at the position, close to an air outlet of the electromagnetic valve, in the detection box, and an air inlet dehumidification device is mounted at the air inlet end of the electromagnetic valve. The device has the beneficial effects that through the combination of the sampling pump, the filter element and the spiral dehumidification pipe, the continuous online collection and efficient pretreatment of sample gas are realized, the interference of sample gas moisture and pollutants on the sensor is avoided, the accuracy and real-time performance of detection data are ensured, and the risks of off-line sampling lagging and sample pollution are overcome.