Self-alignment elevated external base area or heterojunction bipolar transistor and manufacturing method thereof

Abstract

The invention discloses a self-aligning bipolar transistor with an uplifted extrinsic base region or a heterojunction bipolar transistor and a fabrication method thereof, belonging to the technical field of semiconductor device fabrication. Firstly, a plurality of medium layers are deposited on a base; an emitter region window is formed through etching, then a medium inner wall is formed in the window; the medium layers (a plurality of) are selectively eroded on the basis of forming emitter region material through deposition or growing and etching, and then an uplifted extrinsic base region is formed through selective epitaxy method at the place vacated by the medium layers which are selectively eroded; and self-alignment of the uplifted extrinsic base region and the emitter region is realized due to the isolation action of the medium inner wall in the emitter region window, thus effectively reducing the base resistance of the device and thereby improving the speed, the frequency and the noise performance of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices and their preparation, and in particular relates to a self-aligned raised extrinsic base region bipolar or heterojunction bipolar transistor and a preparation method thereof by using selective epitaxy to grow a self-aligned raised extrinsic base region. Background technique [0002] Planar Si bipolar transistors are traditional devices for building analog integrated circuits. However, due to the inherent disadvantage of silicon materials in terms of speed, historically, high-frequency and high-speed applications have been dominated by III-V compound semiconductor devices such as GaAs. The SiGe heterojunction bipolar transistor obtained by introducing the SiGe alloy as the base material into the Si bipolar transistor has greatly improved the high-frequency performance, while maintaining the advantage of low cost of the Si-based technology, so It has been widely used in the field of r...

AI Technical Summary

Problems solved by technology

The common disadvantage of the above two types of technical solutions is that the process is relatively complicated. The former requires expensive special planarization equipment and processes, and the latter requires a selective epitaxy method that is difficult to control because of its base area that plays a decisive role in device performance. to grow, which may cause related process quality control problems, such as defects such as voids that may appear in the connecting base region grown by selective epitaxy between the base region and the preformed extrinsic base region

Therefore, so far, the device structure and process implementation of self-aligned raised extrinsic base bipolar transistors or heterojunction bipolar transistors still need to be improved.

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