Method for preparing film material of metal hafnium

A thin film material and metal technology, which is applied in the field of high melting point metal hafnium thin film material, which is difficult to purify, and can solve the problems of increasing contact resistance, high melting point, reducing film crystal quality and conductivity, etc.
CN1796593AInactive Publication Date: 2006-07-05INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2006-07-05
Estimated Expiration
Not applicable · inactive patent

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Abstract

This invention provides a preparation method for hafnium thin film materials. A dual ion beam epitaxy apparatus with the function of mass separation and characteristics of energetic ion deposition is adopted, and in the condition of low purity requirement, low-cost hafnium chloride serves as raw materials is sputtered onto a sanitized substrate with single beam of pure isotopic low-energy argon ions. First, a thin film of hafnium nitride as block layer and buffer layer preventing reactions between substrate and hafnium ion is prepared from consequent pure isotopic low-energy hafnium ion beam and nitrogen ion beam. Next, hafnium film is deposited by means of single pure isotopic low-energy hafnium ion beam epitaxy. By exactly controlling the energy of hafnium ion beam, the amount of deposition agent, beam density, beam shape and deposition temperature, low-cost deposition and low-temperature epitaxy of hafnium which has a high melting point and is difficult to purify can be realized with high purity and high crystallization quality in ultravacuum cultivation room. The preparation method in this invention is convenient to modulate and optimized and is economical for manufacturing hafnium thin films used in semiconductor technology.
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Description

Technical field

[0001] The present invention belongs to the field of semiconductor technology, and in particular refers to a method for preparing difficult-to-purify and high-melting metal hafnium (Hf) thin film materials on a silicon (Si) substrate using an ion beam epitaxy (IBE) growth device with a double beam structure method. Background of the invention

[0002] IVB refractory metals mainly include titanium (Ti), zirconium (Zr) and hafnium (Hf). As important strategic materials, their metals and compounds are widely used in many fields of national economy and national defense construction, especially, With the rapid development of information and electronic technology in recent years, its application in the field of semiconductor technology has attracted more attention. For example, in the field of microelectronics, the scale of ultra-large-scale integrated circuits (ULSI) continues to increase, resulting in the continuous reduction of device feature sizes. This requires fin...

Claims

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