Preparation method of metal nanometer line with controllable size

A technology of metal nanowires and dimensions, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve the problems of complicated manufacturing process, many raw materials, environmental pollution, etc., and achieve a strong universal effect

Inactive Publication Date: 2009-10-21
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this preparation method has disadvantages. First, it is not universal and can only produce iron nanowires, but not other metal nanowires; secondly, the manufacturing process is complicated and requires more raw materials. The use of surfactants and complexing agents also has certain pollution to the environment
Although there are also template electrochemical deposition or electroless chemical deposition methods to prepare metal nanowire

Method used

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  • Preparation method of metal nanometer line with controllable size
  • Preparation method of metal nanometer line with controllable size
  • Preparation method of metal nanometer line with controllable size

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Embodiment 1

[0016] The specific steps of preparation are as follows: the first step is to put the surrounding aluminum sheet in an acid solution with a concentration of 0.2M, and anodize it at a DC voltage of 20V for 3 hours; among them, the purity of the aluminum sheet is 99.9%, and the acid solution for sulfuric acid solution. Then soak it in a mixed solution of 8wt% phosphoric acid and 1.6wt% chromic acid at a temperature of 50°C for 6h. Next, it was anodized for the second time under the same process conditions for 10 hours, and then the unoxidized aluminum on the back was removed with copper chloride solution, and then the aluminum oxide barrier layer at the bottom of the hole was etched away with 3wt% phosphoric acid solution. , to obtain a through-hole alumina template with aluminum around it and a pore size of 30 nm. In the second step, after evaporating a 90nm-thick gold film on one side of the through-hole alumina template by ion sputtering, first place the non-gold-coated side...

Embodiment 2

[0018] The specific steps of preparation are as follows: the first step is to first place the aluminum sheet sealed around it in an acid solution with a concentration of 0.25M, and anodize it at a DC voltage of 30V for 4 hours; wherein, the purity of the aluminum sheet is 99.99%, and the acid solution for sulfuric acid solution. Then soak it in a mixed solution of 7wt% phosphoric acid and 1.7wt% chromic acid at a temperature of 55°C for 7h. Next, it was anodized for the second time under the same process conditions for 11 hours, and the unoxidized aluminum on the back was removed with a tin chloride solution, and then the aluminum oxide barrier layer at the bottom of the hole was etched away with a 4wt% phosphoric acid solution. , to obtain a through-hole alumina template with aluminum around it and a pore size of 40 nm. In the second step, use the ion sputtering method to vapor-deposit a 100nm thick gold film on one side of the through-hole alumina template, first place the ...

Embodiment 3

[0020] The specific steps of preparation are as follows: the first step is to put the surrounding aluminum sheet in an acid solution with a concentration of 0.3M, and anodize it at a DC voltage of 40V for 5 hours; the purity of the aluminum sheet is 99.9%, and the acid solution For oxalic acid solution. Then soak it in a mixed solution of 6wt% phosphoric acid and 1.8wt% chromic acid at a temperature of 60° C. for 8 hours. Next, it was anodized for the second time under the same process conditions for 12 hours, and then the unoxidized aluminum on the back was removed with copper chloride solution, and then the aluminum oxide barrier layer at the bottom of the hole was etched away with 5 wt% phosphoric acid solution. , to obtain a through-hole alumina template with aluminum around it and a pore size of 50 nm. In the second step, after using the ion sputtering method to vapor-deposit a 110nm thick gold film on one side of the through-hole alumina template, first place the non-go...

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Abstract

The invention discloses a preparation method of a metal nanometer line with a controllable size. The method comprises the following steps: first, using a secondary anodic oxidation method to obtain a through hole alumina template which is provided with peripheral aluminum and has the aperture of 30 nm to 70 nm; second, using an ion sputtering method to evaporate a gold film with the thickness of 90 nm to 130 nm on one side of the through hole alumina template , putting one non-evaporated surface of the through hole alumina template upwards, then, dripping an aqueous solution of metal chloride on the through hole alumina template and soaking for 1 hour to 3 hours, and afterwards, cleaning with water and drying; and third, putting the through hole alumina template with the metal nanometer line arranged in a hole into a strong slkali solution to erode the alumina template so as to prepare the metal nanometer line with the controllable size. The invention can evaporate the gold film at one side of the anodic alumina template by the reduction action of aluminum, can deposit the metal nanometer line in a nanometer pore canal of the anodic alumina template with peripheral aluminum, has stronger universality and simple operation and can manually effectively control the size of the prepared metal nanometer line.

Description

technical field [0001] The invention relates to a method for preparing nanowires, in particular to a method for preparing size-controllable metal nanowires. Background technique [0002] Metal nanowires have good electrical conductivity and have broad application prospects in various electronic devices. For a long time, people have been tirelessly studying its preparation method, such as "an iron nanowire and its preparation method" disclosed in Chinese Invention Patent Application Publication CN 1843671A published on October 11, 2006. It intends to provide a wet chemical process to make iron nanowires. The specific steps are as follows: after dissolving soluble ferrous salt or ferric salt in distilled water, first use nitric acid or sulfuric acid or hydrochloric acid and ammonia water to adjust the pH value to 1-3, then add surfactant and complexing agent to it in turn, and then , adding a solution containing a reducing agent to it under stirring conditions, using a chemi...

Claims

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Application Information

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IPC IPC(8): B22F9/00C30B29/02C30B29/62
Inventor 许巧玲孟国文吴学邦魏青孔明光张立德
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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