Photoconductive switch manufacturing method based on SiC substrate

Abstract

The invention provides a photoconductive switch manufacturing method based on a SiC substrate, and relates to the technical field of wide bandgap semiconductor material photoelectronic devices. SiC with the thickness of 400 micrometers after polishing serves as a substrate in the photoconductive switch manufacturing method based on the SiC substrate. The photoconductive switch manufacturing method based on the SiC substrate comprises the steps that the SiC substrate is prepared; a SiO2 insulation protective layer is generated through thermal oxidation, and a window is formed through photoetching; in high vacuum low temperature Ar atmosphere, a Ti electrode is deposited on the carbon surface, and a Ni electrode is deposited on the silicon surface; after high temperature rapid thermal processing in the Ar atmosphere, a Au protective film is deposited through a small-size ion sputtering instrument, and a photoconductive switch of a Au / Ti / SiC / Ni / Au different-surface opposite-electrode structure is formed by being encapsulated through transparent Si3N4 after a copper electrode is bonded. According to the photoconductive switch manufacturing method based on the SiC substrate, due to the fact that epitaxy of an n-type or p-type SiC epitaxial layer with high doping concentration is not carried out through devices such as CVDs, the technological process of semiconductors is reduced, the rate of finished products is improved, and production cost is lowered. Technical assurance is provided for the production of devices having hash requirements for large power, high frequency and high temperature resistance in future.

Description

technical field [0001] The invention relates to the technical field of wide-bandgap semiconductor material optoelectronic devices, and specifically refers to a method for manufacturing a photoconductive switch based on a SiC substrate with high frequency, high power, high temperature resistance and anti-interference. Background technique [0002] In the semiconductor industry, Si has been developed as a dominant semiconductor device for nearly half a century. In 1975, D.H.Auston and others successfully developed the first photoconductive switch, which was based on high resistance Si crystal (10 4 Ω·cm) is realized as the base material. In 1982, C.S.Chang et al. of the University of Maryland made a ps-level Blumlein pulse transmitter using a high-resistance Si crystal as a substrate for a photoconductive switch. Since the band gap of Si single crystal is only 1.12eV, the intrinsic excitation can also generate a certain number of carriers at room temperature. Therefore, even...

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Problems solved by technology

[0004] However, the semi-insulating GaAs crystal-based photoconductive switch still cannot meet the high-power, ultra-high-speed, thermal stability and other performance requirements of current high-end technology and military development.

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