18 results about "Photoconductive switch" patented technology

The invention provides a photoconductive switch of a comb electrode, which comprises a semi-insulating gallium arsenide substrate layer, a low-temperature gallium arsenide layer and an insulating protective layer, and is characterized in that the low-temperature gallium arsenide layer is formed on the semi-insulating gallium arsenide substrate layer, and the insulating protective layer is arranged on the low-temperature gallium arsenide layer; a switch anode and a switch cathode are respectively formed on the inner side of the low-temperature gallium arsenide layer surface insulation protection layer; a comb-shaped electrode is arranged on the surface of the low-temperature gallium arsenide layer and located at the switch anode. According to the invention, by arranging the comb-shaped electrode structure, a plurality of comb-tooth electrodes which are distributed in a staggered manner are formed in the electrode region, so that the action area of incident light and a semiconductor active region is increased under an illumination condition, and generation and collection of photon-generated carriers are facilitated; meanwhile, the distribution state of an electric field near the electrode is improved, and the possibility of local electric field concentration is reduced; in addition, a low-temperature gallium arsenide material is adopted as the photoconductive layer, the service life of a current carrier is short, and the device is suitable for photoelectric trigger application scenes with requirements for response speed and stability.

The invention belongs to the technical field of photoconductive switches, and particularly relates to a phonon auxiliary absorption photoconductive switch and a pulse power system. According to the invention, the main excitation path of electrons is changed, that is, the main path of electron excitation in a photoconductive switch (PCSS) is changed into phonon-assisted inter-band transition from impurity energy level-assisted transition, so that bulk excitation with high photon-generated carrier concentration on the PCSS is realized, a large number of photon-generated carriers are relatively uniformly distributed in a conducting channel of the PCSS, and the photoelectric conversion efficiency of the PCSS is improved. And the voltage conversion efficiency of the PCSS can be obviously improved. In addition, the method can be widely and universally used for the PCSS based on the semiconductor material, and the voltage conversion efficiency of the PCSS based on various semiconductor materials is improved.

The invention discloses a triggering system for triggering a gas switch based on a linear photoconductive switch, and aims to solve the problems of instability, short service life, low compactness and the like of an existing triggering system. The device is composed of a high-voltage direct-current source, a charging resistor, a charging isolation inductor, a thyristor, a pulse charging source, a gas switch, a photoconductive switch, a current-limiting resistor, a reverse inductor, a control loop and a load. The pulse charging source comprises an energy storage capacitor, a thyristor, a pulse transformer and a pulse forming line. The control loop is composed of a digital delay generator and a trigger light path. The trigger light path is composed of a laser, a beam expander, an iris diaphragm, a beam splitter and an attenuation piece according to the light path of the pulse laser. The positive electrode end of the photoconductive switch is connected with the high-voltage electrode of the gas switch, bias voltage is directly obtained through coupling of the high-voltage electrode of the gas switch in a capacitive voltage dividing mode, a high-voltage bias power source is omitted, compactness and stability are good, the service life is prolonged, and reliability is improved.

The application belongs to the field of power electronic drive and protection, and relates to a device and method for synchronous control and fault protection based on GaAs photoconductive switch, which comprises the following steps: optically coupling the light signal output end of a synchronous light trigger module and the photosensitive trigger end of a GaAs photoconductive switch load module; connecting the detection end of an electric parameter detection module and the main power loop of the GaAs photoconductive switch load module; connecting the signal output end of the electric parameter detection module and the signal input end of a threshold comparison control module; connecting the protection signal output end of the threshold comparison control module and the trigger control end of the synchronous light trigger module and the protection end of the GaAs photoconductive switch load module, respectively; and realizing accurate triggering and full-condition protection of the GaAs photoconductive switch and improving the working stability and reliability of the GaAs photoconductive switch under high-voltage and large-current working conditions.

The invention provides a voltage balance type capacitor module, an electronic detonator anti-error explosion control circuit and a control method, the capacitor module comprises a power supply module, a plurality of energy storage capacitors, a balance resistor, a voltage comparator and a plurality of MOSFET switches, when the capacitor module is charged, the MOSFET switches are all in a conducting state, at the moment, the capacitor module is in a parallel connection state, and when the capacitor module is charged, the voltage comparator is connected with the power supply module. When the voltage comparator detects that the voltage at the two ends of the equalizing resistor reaches a preset value, the output level of the voltage comparator is overturned to control the MOSFET switch to be switched off, so that the capacitor module is automatically converted into a series connection state, and the electronic detonator anti-error-explosion control circuit comprises a photoconductive switch connected in series with a discharge loop, the photoconductive switch is in a high-resistance state when laser is not activated so as to realize physical-level isolation, and is converted into a low-resistance state after being activated so as to realize conduction of a discharge loop, automatic equalization and high-voltage output of capacitor voltage of the electronic detonator are realized, and the safety is improved through light-operated isolation.

Devices, systems, and methods for illuminating a photoconductive switch are disclosed. The disclosed technology minimizes an amount of light that is reflected back into an input optical waveguide. The disclosed technology provides an illumination oven that delivers light from the input optical waveguide to the photoconductive switch. The illumination oven is configured to trap light and cause multiple reflection passes of the light therewithin. The illumination oven is configured to reduce opportunities for the light to escape via the input optical waveguide. In particular, the illumination oven includes a tipped or angled top end that directs light downward to the photoconductive switch. The input optical waveguide is coupled to the illumination oven at a lateral offset, which, along with the tipped top end, causes the light to rattle and chaotically flow within the illumination oven to be ultimately absorbed by the photoconductive switch or dissipate.

The invention discloses a device and method for optimizing the output performance of a photoconductive switch based on vortex light. The device comprises a laser, and a filter, a focusing lens, a spiral phase plate and the photoconductive switch are sequentially arranged in the light beam propagation direction of the laser. The output end of the laser is coaxially aligned with the light-in surface of the spiral phase plate, and the light-out surface of the spiral phase plate is coaxially aligned with the gap area of the photoconductive switch. The method comprises the following steps: adjusting the height and horizontal position of each component to ensure that a light source is coaxial and a light beam sequentially passes through a laser window, a focusing lens and a photoconductive switch gap center at the center of a spiral phase plate; the laser is started to output Gaussian laser, the Gaussian laser is converted into vortex light through the spiral phase plate, the vortex light enters a semiconductor substrate area corresponding to an electrode gap of the photoconductive switch, photon-generated carriers are excited to be generated in the substrate, the photoconductive switch is converted into a conduction state from a dark state and a high-resistance state, and voltage is output. The problem that the output amplitude of the photoconductive switch is slightly improved by Gaussian light in the prior art is solved.

The application discloses a photoconductive switch based on a parasitic capacitance effect caused by dislocations, a preparation method and a tuning method, and relates to the technical field of semiconductor devices. The preparation method comprises the following steps: preparing a silicon carbide substrate, performing dislocation analysis on the silicon carbide substrate to obtain different dislocation density substrate intervals, and partitioning the different dislocation density substrate intervals; preparing a composite metal layer on the silicon carbide substrate, and obtaining a positive silicon carbide wafer with a photoconductive switch electrode structure through photoetching, developing, stripping and other processes; performing alloying treatment on the silicon carbide wafer with the non-electrode area removed to obtain a photoconductive switch, and then performing scribing on the photoconductive switch to obtain a single discrete photoconductive semiconductor device. The application realizes the tuning of the output signal half-peak width and the spectrum of the photoconductive switch by regulating the dislocation density of the photoconductive switch device substrate and utilizing the capacitance effect caused by the dislocation defects.

The invention discloses a gallium oxide nonlinear photoconductive switch device with high electric field tolerance, which comprises a substrate, one side of the upper surface of the substrate is provided with a groove or a table board with an inverted trapezoidal section, and the other side of the lower surface of the substrate is provided with a groove or a table board with a trapezoidal section. The section of the groove or the table top on the lower surface of the substrate is congruently symmetrical with the section of the groove or the table top on the upper surface, a front passivation layer is deposited on the outer side of the groove or the table top above the upper surface of the substrate, and a back passivation layer is arranged on the substrate on the outer side of the groove or the table top on the lower surface of the substrate. The invention also discloses a manufacturing method of the gallium oxide nonlinear photoconductive switch device with high electric field tolerance. The problems that in the prior art, a Ga2O3 photoconductive switch device is concentrated in electric field, low in peak voltage and incapable of working in a nonlinear mode are solved.

A photoconductive switching device with a waveguide structure belongs to the field of power semiconductors, and comprises a dark-state high-resistance photosensitive substrate which serves as a functional area of a photoconductor and a core layer of an optical waveguide at the same time; the high-reflectivity front electrode and the high-reflectivity back electrode are formed above and below the substrate; the side surface reflection increasing film is formed on the side wall of the substrate; and the waveguide coupling window is arranged on the substrate and is used for coupling light emitted by the trigger light source into the substrate at an angle greater than a critical angle of total reflection of a substrate material, so that a light beam is transversely conducted in the substrate. The effective optical path of the photoconductive switching device for extrinsic wavelength is greatly prolonged, sufficient absorption of incident light is guaranteed, the light responsivity and light current of the device are effectively improved, the on-resistance is reduced, and the problem of mismatch of a photoelectric field caused by light blocking of electrode metal of a traditional photoconductive device is solved; the problem of electric field concentration caused by an optical surface microstructure is avoided, and the blocking capability of the device is improved.

The application provides a longitudinal light guide switch with an electrode expansion structure and a preparation method thereof, and relates to the technical field of semiconductor devices. The longitudinal light guide switch comprises a metal electrode formed on the side surface of the substrate layer at both ends; an aluminum-doped zinc oxide layer formed at the anode position of the substrate layer and symmetrically distributed on part of the light entrance surface and part of the back surface of the substrate layer; and a silicon nitride layer formed at the anode position and the cathode position of the substrate layer and symmetrically distributed on part of the light entrance surface and part of the back surface of the substrate layer, wherein the silicon nitride layer at the anode position is also symmetrically distributed on the aluminum-doped zinc oxide layer. In this way, the aluminum-doped zinc oxide layer and the silicon nitride layer are arranged on the metal electrode and the substrate layer, so that the light guide switch absorption efficiency is improved. Meanwhile, the aluminum-doped zinc oxide is used as the expansion structure, the current density of the metal electrode is dispersed, the silicon nitride layer is used as a passivation layer, the surface flashover between the metal electrodes is inhibited, and the switch withstand voltage capacity is improved.

A portable wide bandgap semiconductor photoconductive switch triggering device adopts two lithium batteries connected in series to supply power, a PWM signal generator controls a high-voltage module to generate 20kV pulse voltage, and spark discharge is generated through a tungsten needle electrode. And after being screened by a filter in the aluminum shielding box, the composite light generated by discharging is focused to the surface of the wide bandgap semiconductor photoconductive switch by a collimating lens so as to realize quick triggering. The overall volume of the device is lt; the thickness is 150 cm, and the weight is 1t; the trigger time can be greater than or equal to 5000 times in single charging, and the trigger delay lt is delayed; 7 ns. By optimizing PWM control parameters, triggering of different frequencies can be achieved, and the triggering efficiency of the photoconductive switch is further improved.

The application discloses a photoconductive switch device with a waveguide structure, belonging to the field of power semiconductors, comprising: a dark-state high-resistance light-sensitive substrate, which simultaneously serves as a functional area of a photoconductor and a core layer of a light waveguide; a high-reflection front electrode and a high-reflection back electrode formed above and below the substrate; a side surface reflection-increasing film formed on the sidewall of the substrate; and a waveguide coupling window arranged on the substrate, which is used for coupling light emitted by a trigger light source into the substrate at an angle greater than the critical angle of total reflection of the substrate material, so that the light beam is conducted laterally in the substrate. The application greatly prolongs the effective optical path of the photoconductive switch device for non-intrinsic wavelengths, ensures sufficient absorption of incident light, effectively improves the light responsivity and photocurrent of the device, reduces the on-resistance, solves the problem of optical-electric field mismatch caused by light blocking of the electrode metal of a traditional photoconductive device, and simultaneously separates the light incidence area from the electrode area, thereby avoiding the problem of electric field concentration caused by the optical surface microstructure and being beneficial to improving the blocking capacity of the device.

The invention discloses a vertical structure photoconductive switch device capable of dissipating heat through electrodes, which comprises two concentric cylindrical electrodes which are respectively arranged on two sides of a photoconductive semiconductor chip. Wherein one cylindrical electrode is of a hollow structure, is connected with the front surface of the photoconductive semiconductor chip and is used as a voltage input end and a light input end, and laser is incident to the photosensitive surface of the photoconductive semiconductor through the hollow electrode; and the other electrode is connected with the back surface of the photoconductive semiconductor chip and serves as an electric signal output end. Heat accumulation is generated when a photoconductive switch works, the temperature of the photoconductive switch can reach more than 400 DEG C when the photoconductive switch works at high repetition frequency, the performance of a device is influenced, and the service life of the device is shortened. In order to realize the high-voltage characteristic of the photoconductive switch, an insulating pouring sealant is generally injected to improve the breakdown voltage of a device, but the heat dissipation capability of the photoconductive switch is also limited. The heat accumulation of the photoconductive switch mainly comes from laser heating and Joule heat of an electrode area, so that the heat of the photoconductive switch can be led out through the reasonable structural design of the output end electrode.

The invention belongs to the technical field of solid-state pulse power, and discloses a long-service-life photoconductive switch and a preparation method thereof.A substrate is arranged in a packaging shell, a photoconductive switch wafer is arranged on the substrate, the anode of the photoconductive switch wafer is connected with an anode outer conductor lead, the cathode of the photoconductive switch wafer is connected with a cathode outer conductor lead, and the anode outer conductor lead is connected with a cathode outer conductor lead. The photoconductive switch wafer is further connected with a light spot optical fiber, the anode outer conductor lead, the cathode outer conductor lead and the light spot optical fiber all extend out of the packaging shell, and the packaging shell is further filled with flexible polydimethylsiloxane. A structure formed by connecting the photoconductive switch wafer, the substrate, the anode outer conductor lead, the cathode outer conductor lead and the light spot optical fiber is embedded into the flexible polydimethylsiloxane. According to the invention, the flexible polydimethylsiloxane material is adopted for packaging, so that the thermal mechanical stress caused by large current under the avalanche effect is effectively relieved through the characteristics of excellent flexibility, chemical inertness, high hydrophobicity and low Young modulus of PDMS, and the core structure of the switch is protected.

The invention discloses a gallium oxide photoconductive switch device with a light modulation field limiting ring and a preparation method of the gallium oxide photoconductive switch device. The device comprises a Fe-doped gallium oxide substrate; the first N + gallium oxide layer and the second N + gallium oxide layer are respectively arranged on the upper surface and the lower surface of the substrate; the anode metal electrode is arranged in the center of the upper surface of the first N + gallium oxide layer; the cathode metal electrode is arranged in the center of the lower surface of the second N + gallium oxide layer; the dielectric passivation layer covers the upper surface and the lower surface of the whole device, and an electrode region is exposed; wherein a plurality of grooves are formed in the first N + gallium oxide layer; a plurality of grooves are located in the peripheral area of the edge of the anode metal electrode and penetrate through the whole first N + gallium oxide layer; the grooves are filled with Mg-doped semi-insulating gallium oxide materials so as to form Mg-doped light modulation field limiting rings. According to the structural design, the peak field intensity of the edge of the electrode and the current density of the edge of the electrode are reduced, and the withstand voltage threshold and the reliability of the device are improved while the low on-resistance is ensured.

The invention discloses a beta-Ga2O3 photoconductive switch with a terminal structure and a passivation layer and a preparation process thereof. N-type doped layers are respectively added above and below an iron-doped gallium oxide layer in a light trigger region, so that the ohmic characteristic of an electrode is improved; meanwhile, breakdown points / electric field dense points are moved to the n-Ga2O3 regrowth layer, so that a terminal structure can be conveniently added; the trapezoidal grooves are etched in the upper first n-type doping layer, so that the electric field dense effect is relieved, and the voltage endurance capability of the photoconductive switch is improved. According to the invention, the passivation layer deposited at the groove above the switch can passivate the surface, reduce the surface recombination rate and increase the conduction current. According to the structure, light can be incident from the side face, a light source with higher power and a larger light spot (irradiation area) are supported, the peak breakover current of the device is improved, and large-scale integration is facilitated.

Components, methods, and techniques related to the use of a photoconductive semiconductor switch (PCSS) for driving a high-power laser diode over a wide range of pulse widths are disclosed. In one exemplary aspect, a circuit for driving one or more laser diodes comprises an input port designed to be coupled to a voltage input, one or more inductors designed to be in series with the one or more laser diodes, a photoconductive switch coupled to the one or more inductors, and an output port designed to be coupled to the one or more laser diodes.