54 results about "Photoconductive switch" patented technology

Disclosed is a method and standard module for amplifying pulsed power. The key point of the technical solution is as follows: a method for amplifying pulsed power is formed by means of the joint action of a LASER mode of a crystal medium, a carrier multiplication amplification mode of a semiconductor medium, and a plasma breakdown amplification mode of a gas medium. Electric power which is amplified is converted into optical power first, the optical power is amplified again, and the amplified optical power is converted into electric power again by a photoelectric conversion and amplification device. A gas switch is triggered based on a photoconductive switch to generate a timing-synchronized high-power electric pulse. The high-power electric pulse may be directly outputted or distributed in multiple channels to obtain multiple timing-synchronized trigger signals. In combination with pulse charge of a capacitor, multiple timing-synchronized high-power electric pulses are outputted.

The invention discloses a vertical photoconductive switch and a preparation method thereof, and belongs to the technical field of semiconductors, and the vertical photoconductive switch comprises a substrate, an upper surface electrode disposed on the upper surface of the substrate, and a lower surface electrode disposed on the lower surface of the substrate. The projection of the upper surface electrode on the substrate and the projection of the lower surface electrode on the substrate do not completely coincide, and the upper surface electrode and the lower surface electrode are both of an asymmetric structure. An electric field vector generated by the upper surface electrode and an electric field vector generated by the lower surface electrode are subjected to interference superposition in different directions to form a staggered electric field. According to the vertical photoconductive switch, the upper electrode and the lower electrode which are of an asymmetric structure are adopted, so that current is uniformly diffused in the radial direction and the vertical direction, overdense local current, incomplete superposition of projections of the upper electrode and the lower electrode and breaking of symmetry of an electric field are avoided, the local electric field intensity is effectively reduced, and the overall voltage endurance capability of a device is improved.

The invention discloses a photoconductive switch, a manufacturing method and a high-voltage-resistant picosecond electric pulse device, relates to the technical field of semiconductor devices and can also be applied to the field of microelectronics, and the photoconductive switch comprises a substrate layer, and a low-temperature gallium arsenide layer, a top insulating layer and a top electrode layer which are sequentially stacked on the substrate layer, wherein the top electrode layer comprises a first pin and a second pin, and the first pin and the second pin are embedded into the low-temperature gallium arsenide layer through the top insulating layer. According to the technical scheme, the electrode with a certain depth is embedded into the gallium arsenide growing at low temperature, so that the current density can be reduced, and the heat dissipation performance and the voltage resistance of the photoconductive switch are enhanced.

The invention provides a photoconductive switch of a comb electrode, which comprises a semi-insulating gallium arsenide substrate layer, a low-temperature gallium arsenide layer and an insulating protective layer, and is characterized in that the low-temperature gallium arsenide layer is formed on the semi-insulating gallium arsenide substrate layer, and the insulating protective layer is arranged on the low-temperature gallium arsenide layer; a switch anode and a switch cathode are respectively formed on the inner side of the low-temperature gallium arsenide layer surface insulation protection layer; a comb-shaped electrode is arranged on the surface of the low-temperature gallium arsenide layer and located at the switch anode. According to the invention, by arranging the comb-shaped electrode structure, a plurality of comb-tooth electrodes which are distributed in a staggered manner are formed in the electrode region, so that the action area of incident light and a semiconductor active region is increased under an illumination condition, and generation and collection of photon-generated carriers are facilitated; meanwhile, the distribution state of an electric field near the electrode is improved, and the possibility of local electric field concentration is reduced; in addition, a low-temperature gallium arsenide material is adopted as the photoconductive layer, the service life of a current carrier is short, and the device is suitable for photoelectric trigger application scenes with requirements for response speed and stability.

The invention belongs to the technical field of photoconductive switches, and particularly relates to a phonon auxiliary absorption photoconductive switch and a pulse power system. According to the invention, the main excitation path of electrons is changed, that is, the main path of electron excitation in a photoconductive switch (PCSS) is changed into phonon-assisted inter-band transition from impurity energy level-assisted transition, so that bulk excitation with high photon-generated carrier concentration on the PCSS is realized, a large number of photon-generated carriers are relatively uniformly distributed in a conducting channel of the PCSS, and the photoelectric conversion efficiency of the PCSS is improved. And the voltage conversion efficiency of the PCSS can be obviously improved. In addition, the method can be widely and universally used for the PCSS based on the semiconductor material, and the voltage conversion efficiency of the PCSS based on various semiconductor materials is improved.

The invention provides a novel on-chip high-power microwave unit and a working method thereof, and relates to the technical field of high-power microwave technology, the novel on-chip high-power microwave unit comprises a semi-insulating wide bandgap semiconductor wafer, and an energy storage capacitor, a photoconductive switch and a planar radiation antenna are integrated on the surface of the semi-insulating wide bandgap semiconductor wafer; the energy storage capacitor comprises a high-voltage end polar plate, a grounding end polar plate and an insulating medium; the insulating medium is arranged between the high-voltage end polar plate and the grounding end polar plate; the plane radiating antenna comprises a radiating surface electrode and a grounding surface electrode; the photoconductive switch comprises a cathode, an anode and a trigger gap; a cathode of the photoconductive switch is connected with a high-voltage end polar plate of the energy storage capacitor, an anode of the photoconductive switch is connected with an impedance conversion part of a radiating surface electrode of the planar radiating antenna, and a grounding surface electrode of the planar radiating antenna is connected with a grounding end polar plate in the energy storage capacitor. The output power of the on-chip high-power ultra-wide-spectrum microwave system is improved, and the effects of being compact, light, low in cost and long in service life can be achieved.

The invention discloses a triggering system for triggering a gas switch based on a linear photoconductive switch, and aims to solve the problems of instability, short service life, low compactness and the like of an existing triggering system. The device is composed of a high-voltage direct-current source, a charging resistor, a charging isolation inductor, a thyristor, a pulse charging source, a gas switch, a photoconductive switch, a current-limiting resistor, a reverse inductor, a control loop and a load. The pulse charging source comprises an energy storage capacitor, a thyristor, a pulse transformer and a pulse forming line. The control loop is composed of a digital delay generator and a trigger light path. The trigger light path is composed of a laser, a beam expander, an iris diaphragm, a beam splitter and an attenuation piece according to the light path of the pulse laser. The positive electrode end of the photoconductive switch is connected with the high-voltage electrode of the gas switch, bias voltage is directly obtained through coupling of the high-voltage electrode of the gas switch in a capacitive voltage dividing mode, a high-voltage bias power source is omitted, compactness and stability are good, the service life is prolonged, and reliability is improved.

The application belongs to the field of power electronic drive and protection, and relates to a device and method for synchronous control and fault protection based on GaAs photoconductive switch, which comprises the following steps: optically coupling the light signal output end of a synchronous light trigger module and the photosensitive trigger end of a GaAs photoconductive switch load module; connecting the detection end of an electric parameter detection module and the main power loop of the GaAs photoconductive switch load module; connecting the signal output end of the electric parameter detection module and the signal input end of a threshold comparison control module; connecting the protection signal output end of the threshold comparison control module and the trigger control end of the synchronous light trigger module and the protection end of the GaAs photoconductive switch load module, respectively; and realizing accurate triggering and full-condition protection of the GaAs photoconductive switch and improving the working stability and reliability of the GaAs photoconductive switch under high-voltage and large-current working conditions.

The invention provides a voltage balance type capacitor module, an electronic detonator anti-error explosion control circuit and a control method, the capacitor module comprises a power supply module, a plurality of energy storage capacitors, a balance resistor, a voltage comparator and a plurality of MOSFET switches, when the capacitor module is charged, the MOSFET switches are all in a conducting state, at the moment, the capacitor module is in a parallel connection state, and when the capacitor module is charged, the voltage comparator is connected with the power supply module. When the voltage comparator detects that the voltage at the two ends of the equalizing resistor reaches a preset value, the output level of the voltage comparator is overturned to control the MOSFET switch to be switched off, so that the capacitor module is automatically converted into a series connection state, and the electronic detonator anti-error-explosion control circuit comprises a photoconductive switch connected in series with a discharge loop, the photoconductive switch is in a high-resistance state when laser is not activated so as to realize physical-level isolation, and is converted into a low-resistance state after being activated so as to realize conduction of a discharge loop, automatic equalization and high-voltage output of capacitor voltage of the electronic detonator are realized, and the safety is improved through light-operated isolation.

Devices, systems, and methods for illuminating a photoconductive switch are disclosed. The disclosed technology minimizes an amount of light that is reflected back into an input optical waveguide. The disclosed technology provides an illumination oven that delivers light from the input optical waveguide to the photoconductive switch. The illumination oven is configured to trap light and cause multiple reflection passes of the light therewithin. The illumination oven is configured to reduce opportunities for the light to escape via the input optical waveguide. In particular, the illumination oven includes a tipped or angled top end that directs light downward to the photoconductive switch. The input optical waveguide is coupled to the illumination oven at a lateral offset, which, along with the tipped top end, causes the light to rattle and chaotically flow within the illumination oven to be ultimately absorbed by the photoconductive switch or dissipate.

The invention discloses a semi-insulating gallium arsenide photoconductive switch with a nested porous multilayer structure. The semi-insulating gallium arsenide photoconductive switch comprises a bottom layer unit and a GaAs layer which are sequentially arranged from bottom to top, the upper surface of the GaAs layer is provided with a combined hole unit; a composite coating layer is laid on the upper surface of the GaAs layer, and the composite coating layer is used for filling the combined hole units; a positive electrode and a negative electrode are embedded in the composite coating layer, and the bottom surfaces of the positive electrode and the negative electrode are in embedded contact with the upper surface of the GaAs layer; the combined hole unit is positioned in a GaAs layer region between the positive electrode and the negative electrode; a cofferdam is arranged on the upper surface of the composite coating layer between the positive electrode and the negative electrode, the projection of the combined hole units on the composite coating layer is in the cofferdam, and the cofferdam is filled with a sealing layer. According to the photoconductive switch, the voltage endurance capability of the switch is improved, and the performance of the switch is improved. The invention also discloses a preparation method of the photoconductive switch.

The present invention discloses a radar array device and method based on on-chip antenna-pulse source integration, which relates to the field of antenna technology, including an excitation structure, which is composed of a photoconductive switch and generates a high-frequency pulse current through laser excitation for exciting the array antenna; a transmission structure, which uses a low-loss GSG coplanar waveguide to transmit the high-frequency current to the array antenna for low-loss transmission; an acquisition structure, which is composed of a photoconductive switch and receives electromagnetic signals from the array antenna and converts them into current signals for signal acquisition and transmission; a radiation structure, which is composed of an array passive antenna and is used for mutual conversion between electromagnetic waves and current; the present application can effectively excite and collect electromagnetic waves, and the bandwidth can be extended to millimeter waves or even higher frequency bands, and has the characteristics of higher signal-to-noise ratio, lower power consumption and smaller size compared with the existing technology; it improves the receiving sensitivity and transmission efficiency of electromagnetic signals and reduces transmission loss.

The invention discloses a high-frequency transceiver chip device based on on-chip antenna-pulse source heterogeneous integration, and relates to the technical field of antennas. Comprising an excitation structure used for exciting a high-frequency signal through a photoconductive switch; the transmission structure is used for low-loss transmission of high-frequency signals; the acquisition structure is used for acquiring the space electromagnetic wave signal converted by the radiating antenna; the radiation structure is used for realizing mutual conversion between on-chip current and space electromagnetic waves; the excitation structure, the transmission structure, the acquisition structure and the radiation structure are integrated on the same chip; according to the high-frequency transceiver chip device based on the on-chip antenna-pulse source heterogeneous integration, the high-frequency pulse source and the millimeter wave antenna are heterogeneous integrated, so that radiation and receiving of high-frequency electromagnetic waves above 110 GHz are realized; by optimizing the transfer and transmission structure design of the photoconductive substrate, the transmission loss of high-frequency signals is reduced, and the radiation power is improved; the receiving function of high-frequency electromagnetic waves is realized, and the application range of the device is expanded.

The invention discloses a radar array device and method based on on-chip antenna-pulse source integration, and relates to the technical field of antennae, and the device comprises an excitation structure which is composed of a photoconductive switch, generates a high-frequency pulse current through laser excitation, and is used for exciting an array antenna; the transmission structure adopts a low-loss GSG coplanar waveguide to transmit high-frequency current to the array antenna and is used for low-loss transmission; the acquisition structure consists of a photoconductive switch, receives the electromagnetic signal from the array antenna, converts the electromagnetic signal into a current signal, and is used for signal acquisition and transmission; the radiation structure consists of array passive antennas and is used for mutual conversion between electromagnetic waves and current; according to the invention, electromagnetic waves can be effectively excited and collected, the bandwidth can be expanded to millimeter waves or even higher frequency bands, and compared with the prior art, the antenna has the characteristics of higher signal-to-noise ratio, lower power consumption and smaller size; the receiving sensitivity and the transmission efficiency of the electromagnetic signal are improved, and the transmission loss is reduced.

The invention discloses a photoconductive switch capable of generating a parasitic capacitance effect based on dislocation, a preparation method and a tuning method, and relates to the technical field of semiconductor devices. The preparation method comprises the following steps: preparing a silicon carbide substrate, performing dislocation analysis on the silicon carbide substrate to obtain substrate intervals with different dislocation densities, and partitioning the substrate intervals with different dislocation densities; preparing a composite metal layer on the silicon carbide substrate, and obtaining a positive silicon carbide wafer with a photoconductive switch electrode structure through photoetching, developing, stripping and other processes; and carrying out alloy treatment on the silicon carbide wafer without the non-electrode area to obtain a photoconductive switch, and then scribing the photoconductive switch to obtain a single discrete photoconductive semiconductor device. According to the invention, the substrate dislocation density of the photoconductive switch device is regulated and controlled, and the half-peak width and the frequency spectrum of the output signal of the photoconductive switch are tunable by utilizing the capacitance effect introduced by the dislocation defect.

The invention provides a longitudinal photoconductive switch with an electrode expansion structure and a preparation method thereof, and relates to the technical field of semiconductor devices. Comprising metal electrodes formed on side surfaces of two ends of a substrate layer; the zinc oxide aluminum-doped layer is formed at the anode position of the substrate layer and symmetrically distributed on a part of the light incident surface and a part of the backlight surface of the substrate layer; and the silicon nitride layers are formed at the anode position and the cathode position of the substrate layer and are symmetrically distributed on a part of the light incident surface and a part of the backlight surface of the substrate layer, and the silicon nitride layer at the anode position is also symmetrically distributed on the zinc oxide aluminum-doped layer. Therefore, by arranging the zinc oxide aluminum-doped layer and the silicon nitride layer on the metal electrode and the substrate layer, the absorption efficiency of the photoconductive switch is improved. Meanwhile, the aluminum-doped zinc oxide is used as an expansion structure, the current density of the metal electrodes is dispersed, the silicon nitride layer is used as a passivation layer, surface flashover between the metal electrodes is inhibited, and the voltage endurance capability of the switch is improved.

The invention discloses an all-solid-state high-power microwave source with tunable rise time based on a photoconductive switch, which belongs to the technical field of semiconductor devices and comprises the photoconductive switch, a variable inductor and a horn antenna. The variable inductor is electrically connected with the photoconductive switch through a wire. The horn antenna is electrically connected with the variable inductor through a radio frequency connecting line and a radio frequency coaxial connector. The photoconductive switch comprises a substrate layer, a Ni metal layer and a pair of ohmic contact electrode assemblies, the Ni metal layer is arranged above the substrate layer, and the ohmic contact electrode assemblies are arranged above the Ni metal layer. By adopting the all-solid-state high-power microwave source with the tunable rise time based on the photoconductive switch, the requirements of multiple application scenes such as tunable and ultrafast can be met, and miniaturization and practical popularization is facilitated.

The application discloses a light guide switch detection system and a detection method. The light guide switch detection system comprises a signal synchronization unit, a laser and an electric pulse unit. The signal synchronization unit is used for generating a first synchronization control signal and a second synchronization control signal. The electric pulse unit is connected with the signal synchronization unit and between a low-voltage signal and a high-voltage signal. The electric pulse unit is used for generating a first electric pulse signal according to the first synchronization control signal and the high-voltage signal. The laser is connected with the signal synchronization unit. The laser is used for generating a laser signal according to the second synchronization control signal. The light guide switch to be detected is connected with the electric pulse unit and the laser respectively. The light guide switch to be detected is used for generating a third electric pulse signal according to the first electric pulse signal and the laser signal. The first electric pulse signal and the laser signal reach the corresponding peak values at the same time. The performance of the light guide switch is fully detected through photoelectric synchronization.

Methods, devices and systems for ultra-high dose radiotherapy are disclosed. The described techniques rely in-part on active switching control of a photoconductive switch during the time the accelerator is accelerating charged particles to produce the output radiation at the desired dose rates. One radiotherapy system includes a particle accelerator configured to receive charged particles from a pulsed source. The particle accelerator includes a pipe configured to allow the charged particles to pass through as a beam, a magnetic core positioned proximate to the pipe and coupled to the pulsed source, and at least one multilayer insulator positioned adjacent to the pipe and the magnetic core. The system also includes a photoconductive switch coupled to the particle accelerator and configured to supply the particle accelerator with a plurality of voltage pulses.

The present invention discloses a high-frequency transceiver chip device based on heterogeneous integration of an on-chip antenna and a pulse source, which relates to the technical field of antennas; it includes: an excitation structure for exciting high-frequency signals through a photoconductive switch; a transmission structure for low-loss transmission of high-frequency signals; a collection structure for collecting spatial electromagnetic wave signals converted by a radiation antenna; a radiation structure for realizing the mutual conversion between on-chip current and spatial electromagnetic waves; the excitation structure, the transmission structure, the collection structure, and the radiation structure are integrally integrated on the same chip; this high-frequency transceiver chip device based on heterogeneous integration of an on-chip antenna and a pulse source realizes the radiation and reception of high-frequency electromagnetic waves above 110 GHz by heterogeneously integrating a high-frequency pulse source and a millimeter-wave antenna; by optimizing the transfer and transmission structure design of the photoconductive substrate, the transmission loss of high-frequency signals is reduced, and the radiation power is improved; the reception function of high-frequency electromagnetic waves is realized, and the application range of the device is expanded.

The invention belongs to the field of high-voltage large-current gas switches, and particularly relates to a compact high-voltage large-current gas switch triggered by weak laser, a device and a Marx driving source. The technical problems that an existing trigger switch comprises three electrodes, a trigger loop, a photoconductive switch trigger light path and other complex parts, the structure is not compact enough, and the Marx driving source application requirement is difficult to meet are mainly solved. The gas switch comprises a high-voltage electrode, a low-voltage electrode, a trigger electrode, a supporting insulator, an insulating cover, a reversal element, a photoconductive switch and an energy transmission optical fiber. By adopting the innovative structural design, the compact assembly of the three-electrode gas switch, the photoconductive switch, the reversing element and other parts is realized, and the gas switch has the characteristics of compact structure, convenience in assembly and the like.

This invention provides a method for fabricating a microfluidic photoconductive switch, a switch, and a switch mold. The method includes: performing electro-jet printing on a polished silicon wafer to obtain a switch mold; pouring the prepared PDMS liquid into the switch mold to obtain an initial photoconductive switch, the initial photoconductive switch including a microchannel and a control channel; modifying the microchannels of the initial photoconductive switch to obtain a modified photoconductive switch; and injecting photoconductive liquid into the control channel and microchannels of the modified photoconductive switch to obtain a microfluidic photoconductive switch. This invention utilizes electro-jet printing technology to obtain a switch mold, and then obtains a microfluidic liquid photoconductive switch through pouring and channel modification. Compared with existing microfluidic photoconductive device fabrication methods, this invention has a simpler manufacturing process, is easier to operate, and has lower costs, and can be widely applied in the fabrication of various photoconductive devices.

A SiC-GaN composite photoconductive switch comprises a silicon carbide substrate, a semi-insulating gallium nitride epitaxial layer, and two electrodes. The semi-insulating gallium nitride epitaxial layer is disposed on one surface of the silicon carbide substrate; the two electrodes are disposed on either side of the upper surface of the gallium nitride epitaxial layer; the silicon carbide substrate is either a high-purity semi-insulating silicon carbide substrate or a vanadium-compensated silicon carbide substrate; and the semi-insulating gallium nitride epitaxial layer is doped with deep-level impurities. The SiC-GaN composite photoconductive switch of the present invention can utilize silicon carbide's relatively high absorption depth to increase device thickness and improve mechanical strength to enable backside light incidence; fully utilize gallium nitride's excellent transport properties to achieve low on-resistance and high photoelectric conversion efficiency; and the thin layer of gallium nitride grown epitaxially again has higher crystal quality, fewer internal defects, and lower cost.

Disclosed herein are photoconductive semiconductor switch (PCSS) materials and devices based on simple impurity doped ultra-wide bandgap semiconductors, including AIN and hexagonal BN. A PCSS device includes a substrate layer, a first and second electrode, and the ultra-wide bandgap (UWBG) active semiconductor material layer. The UWBG active material layer is doped with a deep level impurity, such as silicon (Si) in hexagonal BN or zirconium (Zr) in AIN.

The invention belongs to the technical field of photoconductive switches, and particularly relates to an ultrahigh-voltage-resistant subnanosecond aluminum nitride (AlN) photoconductive switch (PCSS) and a pulse power system. The photoconductive switch device with the different-surface staggered electrode structure is manufactured on the basis of the high-quality aluminum nitride single crystal. Ultraviolet pulse laser is used as a trigger light source, and a pulse power system is manufactured to test the dynamic response characteristic and the output performance of the aluminum nitride photoconductive switch. The result shows that the device has an ultra-short rise time of less than 0.5 ns, which shows that the device has outstanding potential in the field of wide-spectrum signal generation. The peak value output voltage standard deviation of the aluminum nitride photoconductive switch is relatively low, which indicates that the signal output is high in stability. Besides, the device can work at the maximum bias electric field intensity of 120kV / cm, and the output peak voltage and power are increased along with the increase of the bias electric field intensity and the pulse laser energy, so that the device has huge application potential in a high-power pulse system.

The invention discloses a device and method for optimizing the output performance of a photoconductive switch based on vortex light. The device comprises a laser, and a filter, a focusing lens, a spiral phase plate and the photoconductive switch are sequentially arranged in the light beam propagation direction of the laser. The output end of the laser is coaxially aligned with the light-in surface of the spiral phase plate, and the light-out surface of the spiral phase plate is coaxially aligned with the gap area of the photoconductive switch. The method comprises the following steps: adjusting the height and horizontal position of each component to ensure that a light source is coaxial and a light beam sequentially passes through a laser window, a focusing lens and a photoconductive switch gap center at the center of a spiral phase plate; the laser is started to output Gaussian laser, the Gaussian laser is converted into vortex light through the spiral phase plate, the vortex light enters a semiconductor substrate area corresponding to an electrode gap of the photoconductive switch, photon-generated carriers are excited to be generated in the substrate, the photoconductive switch is converted into a conduction state from a dark state and a high-resistance state, and voltage is output. The problem that the output amplitude of the photoconductive switch is slightly improved by Gaussian light in the prior art is solved.

The invention discloses a photoelectric pulse source and receiving and transmitting phased array antenna integrated device, and relates to the technical field of antennas. Comprising a radiation structure, a transmission structure and an excitation structure, and the radiation structure is in transmission connection with the excitation structure through the transmission structure; the radiation structure is a phased array radiation array antenna and is responsible for receiving and transmitting radio frequency signals; the transmission structures are coplanar waveguides, radio frequency signals are transmitted by the coplanar waveguides, and different transmission structures are designed according to input requirements of different radiation antennas; the excitation structure is a photoconductive switch, and transmits different pulse excitation to different areas of the array through an electric pulse excitation device controlled by direct current bias and laser; according to the invention, the photoconductive switch is used as an excitation source, the integrated miniaturization design of the high-power and high-frequency phased-array antenna is realized by combining an integrated integration scheme, and the size and complexity of the system are greatly reduced by integrating the photoconductive switch and the antenna array on the same chip.

The application discloses a photoconductive switch based on a parasitic capacitance effect caused by dislocations, a preparation method and a tuning method, and relates to the technical field of semiconductor devices. The preparation method comprises the following steps: preparing a silicon carbide substrate, performing dislocation analysis on the silicon carbide substrate to obtain different dislocation density substrate intervals, and partitioning the different dislocation density substrate intervals; preparing a composite metal layer on the silicon carbide substrate, and obtaining a positive silicon carbide wafer with a photoconductive switch electrode structure through photoetching, developing, stripping and other processes; performing alloying treatment on the silicon carbide wafer with the non-electrode area removed to obtain a photoconductive switch, and then performing scribing on the photoconductive switch to obtain a single discrete photoconductive semiconductor device. The application realizes the tuning of the output signal half-peak width and the spectrum of the photoconductive switch by regulating the dislocation density of the photoconductive switch device substrate and utilizing the capacitance effect caused by the dislocation defects.

The application discloses a photoelectric pulse source and a transceiving phased array antenna integrated device, and relates to the technical field of antennas; the device comprises a radiation structure, a transmission structure and an excitation structure, the radiation structure is connected with the excitation structure through the transmission structure; the radiation structure is a phased array radiation array antenna, and is responsible for receiving and emitting radio frequency signals; the transmission structure is a coplanar waveguide, the coplanar waveguide transmits the radio frequency signals, and different transmission structures are designed according to the input requirements of different radiation antennas; the excitation structure is a photoconductive switch, and the photoconductive switch is a direct current bias and a laser control electric pulse excitation device, and different pulse excitations are delivered to different areas of the array; the application uses the photoconductive switch as an excitation source, and combines an integrated scheme, so that a high-power and high-frequency phased array antenna integrated and miniaturized design is realized; the photoconductive switch and the antenna array are integrated on the same chip, so that the volume and complexity of the system are greatly reduced.

The invention provides a non-coplanar groove-type photoconductive switch, which comprises a light-in topological structure and a photoconductive switch device structure, the light-in topological structure comprises at least one groove to form a groove-type light-in surface, and the photoconductive switch device structure comprises a substrate; the incident light topological structure wraps the substrate, and the grooves are formed in the first side face of the incident light topological structure; the groove type light incident surface formed by the at least one groove is used for receiving incident light, the incident light is refracted when passing through the groove type light incident surface to form refracted light, and the refracted light enters the substrate through the groove type light incident surface. Compared with the prior art in which the incident light directly enters the substrate through the plane incident surface, the groove structure can regulate and control the transmission path of the incident light, so that the incident light is more uniformly distributed and propagated, the distribution range and the transmission optical path of the incident light in the substrate are improved, and the utilization efficiency of the incident light is improved.