34 results about "Photoconductive switch" patented technology

The invention discloses a photoconductive switch, a manufacturing method and a high-voltage-resistant picosecond electric pulse device, relates to the technical field of semiconductor devices and can also be applied to the field of microelectronics, and the photoconductive switch comprises a substrate layer, and a low-temperature gallium arsenide layer, a top insulating layer and a top electrode layer which are sequentially stacked on the substrate layer, wherein the top electrode layer comprises a first pin and a second pin, and the first pin and the second pin are embedded into the low-temperature gallium arsenide layer through the top insulating layer. According to the technical scheme, the electrode with a certain depth is embedded into the gallium arsenide growing at low temperature, so that the current density can be reduced, and the heat dissipation performance and the voltage resistance of the photoconductive switch are enhanced.

The invention provides a photoconductive switch of a comb electrode, which comprises a semi-insulating gallium arsenide substrate layer, a low-temperature gallium arsenide layer and an insulating protective layer, and is characterized in that the low-temperature gallium arsenide layer is formed on the semi-insulating gallium arsenide substrate layer, and the insulating protective layer is arranged on the low-temperature gallium arsenide layer; a switch anode and a switch cathode are respectively formed on the inner side of the low-temperature gallium arsenide layer surface insulation protection layer; a comb-shaped electrode is arranged on the surface of the low-temperature gallium arsenide layer and located at the switch anode. According to the invention, by arranging the comb-shaped electrode structure, a plurality of comb-tooth electrodes which are distributed in a staggered manner are formed in the electrode region, so that the action area of incident light and a semiconductor active region is increased under an illumination condition, and generation and collection of photon-generated carriers are facilitated; meanwhile, the distribution state of an electric field near the electrode is improved, and the possibility of local electric field concentration is reduced; in addition, a low-temperature gallium arsenide material is adopted as the photoconductive layer, the service life of a current carrier is short, and the device is suitable for photoelectric trigger application scenes with requirements for response speed and stability.

The invention belongs to the technical field of photoconductive switches, and particularly relates to a phonon auxiliary absorption photoconductive switch and a pulse power system. According to the invention, the main excitation path of electrons is changed, that is, the main path of electron excitation in a photoconductive switch (PCSS) is changed into phonon-assisted inter-band transition from impurity energy level-assisted transition, so that bulk excitation with high photon-generated carrier concentration on the PCSS is realized, a large number of photon-generated carriers are relatively uniformly distributed in a conducting channel of the PCSS, and the photoelectric conversion efficiency of the PCSS is improved. And the voltage conversion efficiency of the PCSS can be obviously improved. In addition, the method can be widely and universally used for the PCSS based on the semiconductor material, and the voltage conversion efficiency of the PCSS based on various semiconductor materials is improved.

The invention provides a novel on-chip high-power microwave unit and a working method thereof, and relates to the technical field of high-power microwave technology, the novel on-chip high-power microwave unit comprises a semi-insulating wide bandgap semiconductor wafer, and an energy storage capacitor, a photoconductive switch and a planar radiation antenna are integrated on the surface of the semi-insulating wide bandgap semiconductor wafer; the energy storage capacitor comprises a high-voltage end polar plate, a grounding end polar plate and an insulating medium; the insulating medium is arranged between the high-voltage end polar plate and the grounding end polar plate; the plane radiating antenna comprises a radiating surface electrode and a grounding surface electrode; the photoconductive switch comprises a cathode, an anode and a trigger gap; a cathode of the photoconductive switch is connected with a high-voltage end polar plate of the energy storage capacitor, an anode of the photoconductive switch is connected with an impedance conversion part of a radiating surface electrode of the planar radiating antenna, and a grounding surface electrode of the planar radiating antenna is connected with a grounding end polar plate in the energy storage capacitor. The output power of the on-chip high-power ultra-wide-spectrum microwave system is improved, and the effects of being compact, light, low in cost and long in service life can be achieved.

The invention discloses a triggering system for triggering a gas switch based on a linear photoconductive switch, and aims to solve the problems of instability, short service life, low compactness and the like of an existing triggering system. The device is composed of a high-voltage direct-current source, a charging resistor, a charging isolation inductor, a thyristor, a pulse charging source, a gas switch, a photoconductive switch, a current-limiting resistor, a reverse inductor, a control loop and a load. The pulse charging source comprises an energy storage capacitor, a thyristor, a pulse transformer and a pulse forming line. The control loop is composed of a digital delay generator and a trigger light path. The trigger light path is composed of a laser, a beam expander, an iris diaphragm, a beam splitter and an attenuation piece according to the light path of the pulse laser. The positive electrode end of the photoconductive switch is connected with the high-voltage electrode of the gas switch, bias voltage is directly obtained through coupling of the high-voltage electrode of the gas switch in a capacitive voltage dividing mode, a high-voltage bias power source is omitted, compactness and stability are good, the service life is prolonged, and reliability is improved.

The application belongs to the field of power electronic drive and protection, and relates to a device and method for synchronous control and fault protection based on GaAs photoconductive switch, which comprises the following steps: optically coupling the light signal output end of a synchronous light trigger module and the photosensitive trigger end of a GaAs photoconductive switch load module; connecting the detection end of an electric parameter detection module and the main power loop of the GaAs photoconductive switch load module; connecting the signal output end of the electric parameter detection module and the signal input end of a threshold comparison control module; connecting the protection signal output end of the threshold comparison control module and the trigger control end of the synchronous light trigger module and the protection end of the GaAs photoconductive switch load module, respectively; and realizing accurate triggering and full-condition protection of the GaAs photoconductive switch and improving the working stability and reliability of the GaAs photoconductive switch under high-voltage and large-current working conditions.

The invention provides a voltage balance type capacitor module, an electronic detonator anti-error explosion control circuit and a control method, the capacitor module comprises a power supply module, a plurality of energy storage capacitors, a balance resistor, a voltage comparator and a plurality of MOSFET switches, when the capacitor module is charged, the MOSFET switches are all in a conducting state, at the moment, the capacitor module is in a parallel connection state, and when the capacitor module is charged, the voltage comparator is connected with the power supply module. When the voltage comparator detects that the voltage at the two ends of the equalizing resistor reaches a preset value, the output level of the voltage comparator is overturned to control the MOSFET switch to be switched off, so that the capacitor module is automatically converted into a series connection state, and the electronic detonator anti-error-explosion control circuit comprises a photoconductive switch connected in series with a discharge loop, the photoconductive switch is in a high-resistance state when laser is not activated so as to realize physical-level isolation, and is converted into a low-resistance state after being activated so as to realize conduction of a discharge loop, automatic equalization and high-voltage output of capacitor voltage of the electronic detonator are realized, and the safety is improved through light-operated isolation.

Devices, systems, and methods for illuminating a photoconductive switch are disclosed. The disclosed technology minimizes an amount of light that is reflected back into an input optical waveguide. The disclosed technology provides an illumination oven that delivers light from the input optical waveguide to the photoconductive switch. The illumination oven is configured to trap light and cause multiple reflection passes of the light therewithin. The illumination oven is configured to reduce opportunities for the light to escape via the input optical waveguide. In particular, the illumination oven includes a tipped or angled top end that directs light downward to the photoconductive switch. The input optical waveguide is coupled to the illumination oven at a lateral offset, which, along with the tipped top end, causes the light to rattle and chaotically flow within the illumination oven to be ultimately absorbed by the photoconductive switch or dissipate.

The invention discloses a semi-insulating gallium arsenide photoconductive switch with a nested porous multilayer structure. The semi-insulating gallium arsenide photoconductive switch comprises a bottom layer unit and a GaAs layer which are sequentially arranged from bottom to top, the upper surface of the GaAs layer is provided with a combined hole unit; a composite coating layer is laid on the upper surface of the GaAs layer, and the composite coating layer is used for filling the combined hole units; a positive electrode and a negative electrode are embedded in the composite coating layer, and the bottom surfaces of the positive electrode and the negative electrode are in embedded contact with the upper surface of the GaAs layer; the combined hole unit is positioned in a GaAs layer region between the positive electrode and the negative electrode; a cofferdam is arranged on the upper surface of the composite coating layer between the positive electrode and the negative electrode, the projection of the combined hole units on the composite coating layer is in the cofferdam, and the cofferdam is filled with a sealing layer. According to the photoconductive switch, the voltage endurance capability of the switch is improved, and the performance of the switch is improved. The invention also discloses a preparation method of the photoconductive switch.

The invention discloses a photoconductive switch capable of generating a parasitic capacitance effect based on dislocation, a preparation method and a tuning method, and relates to the technical field of semiconductor devices. The preparation method comprises the following steps: preparing a silicon carbide substrate, performing dislocation analysis on the silicon carbide substrate to obtain substrate intervals with different dislocation densities, and partitioning the substrate intervals with different dislocation densities; preparing a composite metal layer on the silicon carbide substrate, and obtaining a positive silicon carbide wafer with a photoconductive switch electrode structure through photoetching, developing, stripping and other processes; and carrying out alloy treatment on the silicon carbide wafer without the non-electrode area to obtain a photoconductive switch, and then scribing the photoconductive switch to obtain a single discrete photoconductive semiconductor device. According to the invention, the substrate dislocation density of the photoconductive switch device is regulated and controlled, and the half-peak width and the frequency spectrum of the output signal of the photoconductive switch are tunable by utilizing the capacitance effect introduced by the dislocation defect.

The invention discloses an all-solid-state high-power microwave source with tunable rise time based on a photoconductive switch, which belongs to the technical field of semiconductor devices and comprises the photoconductive switch, a variable inductor and a horn antenna. The variable inductor is electrically connected with the photoconductive switch through a wire. The horn antenna is electrically connected with the variable inductor through a radio frequency connecting line and a radio frequency coaxial connector. The photoconductive switch comprises a substrate layer, a Ni metal layer and a pair of ohmic contact electrode assemblies, the Ni metal layer is arranged above the substrate layer, and the ohmic contact electrode assemblies are arranged above the Ni metal layer. By adopting the all-solid-state high-power microwave source with the tunable rise time based on the photoconductive switch, the requirements of multiple application scenes such as tunable and ultrafast can be met, and miniaturization and practical popularization is facilitated.

The application discloses a light guide switch detection system and a detection method. The light guide switch detection system comprises a signal synchronization unit, a laser and an electric pulse unit. The signal synchronization unit is used for generating a first synchronization control signal and a second synchronization control signal. The electric pulse unit is connected with the signal synchronization unit and between a low-voltage signal and a high-voltage signal. The electric pulse unit is used for generating a first electric pulse signal according to the first synchronization control signal and the high-voltage signal. The laser is connected with the signal synchronization unit. The laser is used for generating a laser signal according to the second synchronization control signal. The light guide switch to be detected is connected with the electric pulse unit and the laser respectively. The light guide switch to be detected is used for generating a third electric pulse signal according to the first electric pulse signal and the laser signal. The first electric pulse signal and the laser signal reach the corresponding peak values at the same time. The performance of the light guide switch is fully detected through photoelectric synchronization.

This invention provides a method for fabricating a microfluidic photoconductive switch, a switch, and a switch mold. The method includes: performing electro-jet printing on a polished silicon wafer to obtain a switch mold; pouring the prepared PDMS liquid into the switch mold to obtain an initial photoconductive switch, the initial photoconductive switch including a microchannel and a control channel; modifying the microchannels of the initial photoconductive switch to obtain a modified photoconductive switch; and injecting photoconductive liquid into the control channel and microchannels of the modified photoconductive switch to obtain a microfluidic photoconductive switch. This invention utilizes electro-jet printing technology to obtain a switch mold, and then obtains a microfluidic liquid photoconductive switch through pouring and channel modification. Compared with existing microfluidic photoconductive device fabrication methods, this invention has a simpler manufacturing process, is easier to operate, and has lower costs, and can be widely applied in the fabrication of various photoconductive devices.

Disclosed herein are photoconductive semiconductor switch (PCSS) materials and devices based on simple impurity doped ultra-wide bandgap semiconductors, including AIN and hexagonal BN. A PCSS device includes a substrate layer, a first and second electrode, and the ultra-wide bandgap (UWBG) active semiconductor material layer. The UWBG active material layer is doped with a deep level impurity, such as silicon (Si) in hexagonal BN or zirconium (Zr) in AIN.

The invention belongs to the technical field of photoconductive switches, and particularly relates to an ultrahigh-voltage-resistant subnanosecond aluminum nitride (AlN) photoconductive switch (PCSS) and a pulse power system. The photoconductive switch device with the different-surface staggered electrode structure is manufactured on the basis of the high-quality aluminum nitride single crystal. Ultraviolet pulse laser is used as a trigger light source, and a pulse power system is manufactured to test the dynamic response characteristic and the output performance of the aluminum nitride photoconductive switch. The result shows that the device has an ultra-short rise time of less than 0.5 ns, which shows that the device has outstanding potential in the field of wide-spectrum signal generation. The peak value output voltage standard deviation of the aluminum nitride photoconductive switch is relatively low, which indicates that the signal output is high in stability. Besides, the device can work at the maximum bias electric field intensity of 120kV / cm, and the output peak voltage and power are increased along with the increase of the bias electric field intensity and the pulse laser energy, so that the device has huge application potential in a high-power pulse system.

The invention discloses a device and method for optimizing the output performance of a photoconductive switch based on vortex light. The device comprises a laser, and a filter, a focusing lens, a spiral phase plate and the photoconductive switch are sequentially arranged in the light beam propagation direction of the laser. The output end of the laser is coaxially aligned with the light-in surface of the spiral phase plate, and the light-out surface of the spiral phase plate is coaxially aligned with the gap area of the photoconductive switch. The method comprises the following steps: adjusting the height and horizontal position of each component to ensure that a light source is coaxial and a light beam sequentially passes through a laser window, a focusing lens and a photoconductive switch gap center at the center of a spiral phase plate; the laser is started to output Gaussian laser, the Gaussian laser is converted into vortex light through the spiral phase plate, the vortex light enters a semiconductor substrate area corresponding to an electrode gap of the photoconductive switch, photon-generated carriers are excited to be generated in the substrate, the photoconductive switch is converted into a conduction state from a dark state and a high-resistance state, and voltage is output. The problem that the output amplitude of the photoconductive switch is slightly improved by Gaussian light in the prior art is solved.

The application discloses a photoconductive switch based on a parasitic capacitance effect caused by dislocations, a preparation method and a tuning method, and relates to the technical field of semiconductor devices. The preparation method comprises the following steps: preparing a silicon carbide substrate, performing dislocation analysis on the silicon carbide substrate to obtain different dislocation density substrate intervals, and partitioning the different dislocation density substrate intervals; preparing a composite metal layer on the silicon carbide substrate, and obtaining a positive silicon carbide wafer with a photoconductive switch electrode structure through photoetching, developing, stripping and other processes; performing alloying treatment on the silicon carbide wafer with the non-electrode area removed to obtain a photoconductive switch, and then performing scribing on the photoconductive switch to obtain a single discrete photoconductive semiconductor device. The application realizes the tuning of the output signal half-peak width and the spectrum of the photoconductive switch by regulating the dislocation density of the photoconductive switch device substrate and utilizing the capacitance effect caused by the dislocation defects.

The application discloses a photoelectric pulse source and a transceiving phased array antenna integrated device, and relates to the technical field of antennas; the device comprises a radiation structure, a transmission structure and an excitation structure, the radiation structure is connected with the excitation structure through the transmission structure; the radiation structure is a phased array radiation array antenna, and is responsible for receiving and emitting radio frequency signals; the transmission structure is a coplanar waveguide, the coplanar waveguide transmits the radio frequency signals, and different transmission structures are designed according to the input requirements of different radiation antennas; the excitation structure is a photoconductive switch, and the photoconductive switch is a direct current bias and a laser control electric pulse excitation device, and different pulse excitations are delivered to different areas of the array; the application uses the photoconductive switch as an excitation source, and combines an integrated scheme, so that a high-power and high-frequency phased array antenna integrated and miniaturized design is realized; the photoconductive switch and the antenna array are integrated on the same chip, so that the volume and complexity of the system are greatly reduced.

The application discloses a vertical 4H-SiC photoconductive switch, which comprises a SiC substrate, a front electrode, a passivation layer and a back electrode, the front electrode is located on the upper surface of the SiC substrate, the passivation layer is located on the upper surface of the SiC substrate and is arranged at the edge of the front electrode, and the back electrode is located on the lower surface of the SiC substrate; wherein the front electrode comprises a ring electrode and a mesh electrode, the mesh electrode is arranged in the inner circle of the ring electrode and is connected with the ring electrode; a plurality of terminal protection rings are further arranged in the SiC substrate below the outer side of the front electrode, and the circle centers of the longitudinal projections of the terminal protection rings coincide with the circle center of the longitudinal projection of the ring electrode. The structure design relieves the electric field concentration effect near the electrode caused by the uneven distribution of the surface electric field of the photoconductive switch, avoids the premature breakdown of the device, and doubles the withstand voltage capacity of the photoconductive switch; meanwhile, the uniformity of the internal current distribution of the photoconductive switch is improved.

The invention discloses a gallium oxide nonlinear photoconductive switch device with high electric field tolerance, which comprises a substrate, one side of the upper surface of the substrate is provided with a groove or a table board with an inverted trapezoidal section, and the other side of the lower surface of the substrate is provided with a groove or a table board with a trapezoidal section. The section of the groove or the table top on the lower surface of the substrate is congruently symmetrical with the section of the groove or the table top on the upper surface, a front passivation layer is deposited on the outer side of the groove or the table top above the upper surface of the substrate, and a back passivation layer is arranged on the substrate on the outer side of the groove or the table top on the lower surface of the substrate. The invention also discloses a manufacturing method of the gallium oxide nonlinear photoconductive switch device with high electric field tolerance. The problems that in the prior art, a Ga2O3 photoconductive switch device is concentrated in electric field, low in peak voltage and incapable of working in a nonlinear mode are solved.

A photoconductive switching device with a waveguide structure belongs to the field of power semiconductors, and comprises a dark-state high-resistance photosensitive substrate which serves as a functional area of a photoconductor and a core layer of an optical waveguide at the same time; the high-reflectivity front electrode and the high-reflectivity back electrode are formed above and below the substrate; the side surface reflection increasing film is formed on the side wall of the substrate; and the waveguide coupling window is arranged on the substrate and is used for coupling light emitted by the trigger light source into the substrate at an angle greater than a critical angle of total reflection of a substrate material, so that a light beam is transversely conducted in the substrate. The effective optical path of the photoconductive switching device for extrinsic wavelength is greatly prolonged, sufficient absorption of incident light is guaranteed, the light responsivity and light current of the device are effectively improved, the on-resistance is reduced, and the problem of mismatch of a photoelectric field caused by light blocking of electrode metal of a traditional photoconductive device is solved; the problem of electric field concentration caused by an optical surface microstructure is avoided, and the blocking capability of the device is improved.

The invention discloses a preparation method of an irradiation-based C-doped GaN photoconductive switch and a carrier lifetime regulation and control method thereof, and mainly solves the problem of inaccurate carrier lifetime regulation and control of a device in the prior art. According to the implementation scheme, the method comprises the steps that the surface of a single crystal GaN substrate is pretreated; growing a homoepitaxial layer with C-doped front and back surfaces on the pretreated GaN substrate, and performing high-temperature annealing on the homoepitaxial layer; the annealed sample is irradiated, that is, different types of irradiation defects are introduced into the C-doped GaN material to achieve a synergistic effect with a C deep energy level center, so that a multi-carrier composite channel is formed, and accurate regulation and control of the service life of carriers are achieved; and manufacturing a metal electrode and an insulating passivation layer structure on the irradiated GaN surface of the epitaxial wafer through photoetching, etching and metallization processes. According to the method, the service life of the current carrier can be accurately controlled, the method is stable at high temperature and uniform in space, and the method can be used for preparing different types of SiC photoconductive switch devices.

The application provides a longitudinal light guide switch with an electrode expansion structure and a preparation method thereof, and relates to the technical field of semiconductor devices. The longitudinal light guide switch comprises a metal electrode formed on the side surface of the substrate layer at both ends; an aluminum-doped zinc oxide layer formed at the anode position of the substrate layer and symmetrically distributed on part of the light entrance surface and part of the back surface of the substrate layer; and a silicon nitride layer formed at the anode position and the cathode position of the substrate layer and symmetrically distributed on part of the light entrance surface and part of the back surface of the substrate layer, wherein the silicon nitride layer at the anode position is also symmetrically distributed on the aluminum-doped zinc oxide layer. In this way, the aluminum-doped zinc oxide layer and the silicon nitride layer are arranged on the metal electrode and the substrate layer, so that the light guide switch absorption efficiency is improved. Meanwhile, the aluminum-doped zinc oxide is used as the expansion structure, the current density of the metal electrode is dispersed, the silicon nitride layer is used as a passivation layer, the surface flashover between the metal electrodes is inhibited, and the switch withstand voltage capacity is improved.

The invention provides a photoconductive switch and a preparation method thereof, and relates to the technical field of semiconductors. The photoconductive switch comprises a wafer, a front electrode, an annular contact electrode, a reflection dielectric film and an electroplating thickening layer, a front electrode is arranged on the upper surface of the wafer; the lower surface of the wafer is provided with an annular contact electrode and a reflection dielectric film, and the reflection dielectric film is located in a circular ring of the annular contact electrode. The electroplating thickening layer covers the circular ring contact electrode and the reflection dielectric film; and the reflectivity of the reflection dielectric film is greater than that of the lower surface of the wafer. A light absorption path can be extended in a normal incidence mode, so that the light absorption efficiency is improved, and the output capability of the device is improved.

A portable wide bandgap semiconductor photoconductive switch triggering device adopts two lithium batteries connected in series to supply power, a PWM signal generator controls a high-voltage module to generate 20kV pulse voltage, and spark discharge is generated through a tungsten needle electrode. And after being screened by a filter in the aluminum shielding box, the composite light generated by discharging is focused to the surface of the wide bandgap semiconductor photoconductive switch by a collimating lens so as to realize quick triggering. The overall volume of the device is lt; the thickness is 150 cm, and the weight is 1t; the trigger time can be greater than or equal to 5000 times in single charging, and the trigger delay lt is delayed; 7 ns. By optimizing PWM control parameters, triggering of different frequencies can be achieved, and the triggering efficiency of the photoconductive switch is further improved.

The application discloses a photoconductive switch device with a waveguide structure, belonging to the field of power semiconductors, comprising: a dark-state high-resistance light-sensitive substrate, which simultaneously serves as a functional area of a photoconductor and a core layer of a light waveguide; a high-reflection front electrode and a high-reflection back electrode formed above and below the substrate; a side surface reflection-increasing film formed on the sidewall of the substrate; and a waveguide coupling window arranged on the substrate, which is used for coupling light emitted by a trigger light source into the substrate at an angle greater than the critical angle of total reflection of the substrate material, so that the light beam is conducted laterally in the substrate. The application greatly prolongs the effective optical path of the photoconductive switch device for non-intrinsic wavelengths, ensures sufficient absorption of incident light, effectively improves the light responsivity and photocurrent of the device, reduces the on-resistance, solves the problem of optical-electric field mismatch caused by light blocking of the electrode metal of a traditional photoconductive device, and simultaneously separates the light incidence area from the electrode area, thereby avoiding the problem of electric field concentration caused by the optical surface microstructure and being beneficial to improving the blocking capacity of the device.

The invention discloses a vertical structure photoconductive switch device capable of dissipating heat through electrodes, which comprises two concentric cylindrical electrodes which are respectively arranged on two sides of a photoconductive semiconductor chip. Wherein one cylindrical electrode is of a hollow structure, is connected with the front surface of the photoconductive semiconductor chip and is used as a voltage input end and a light input end, and laser is incident to the photosensitive surface of the photoconductive semiconductor through the hollow electrode; and the other electrode is connected with the back surface of the photoconductive semiconductor chip and serves as an electric signal output end. Heat accumulation is generated when a photoconductive switch works, the temperature of the photoconductive switch can reach more than 400 DEG C when the photoconductive switch works at high repetition frequency, the performance of a device is influenced, and the service life of the device is shortened. In order to realize the high-voltage characteristic of the photoconductive switch, an insulating pouring sealant is generally injected to improve the breakdown voltage of a device, but the heat dissipation capability of the photoconductive switch is also limited. The heat accumulation of the photoconductive switch mainly comes from laser heating and Joule heat of an electrode area, so that the heat of the photoconductive switch can be led out through the reasonable structural design of the output end electrode.

The invention belongs to the technical field of solid-state pulse power, and discloses a long-service-life photoconductive switch and a preparation method thereof.A substrate is arranged in a packaging shell, a photoconductive switch wafer is arranged on the substrate, the anode of the photoconductive switch wafer is connected with an anode outer conductor lead, the cathode of the photoconductive switch wafer is connected with a cathode outer conductor lead, and the anode outer conductor lead is connected with a cathode outer conductor lead. The photoconductive switch wafer is further connected with a light spot optical fiber, the anode outer conductor lead, the cathode outer conductor lead and the light spot optical fiber all extend out of the packaging shell, and the packaging shell is further filled with flexible polydimethylsiloxane. A structure formed by connecting the photoconductive switch wafer, the substrate, the anode outer conductor lead, the cathode outer conductor lead and the light spot optical fiber is embedded into the flexible polydimethylsiloxane. According to the invention, the flexible polydimethylsiloxane material is adopted for packaging, so that the thermal mechanical stress caused by large current under the avalanche effect is effectively relieved through the characteristics of excellent flexibility, chemical inertness, high hydrophobicity and low Young modulus of PDMS, and the core structure of the switch is protected.

The invention discloses a preparation method of an irradiation-based V-doped SiC photoconductive switch and a carrier lifetime regulation and control method of the photoconductive switch, and mainly solves the problem of inaccurate carrier lifetime regulation and control of a device in the prior art. According to the implementation scheme, the method comprises the following steps: pretreating the surface of a single crystal SiC substrate; growing a homoepitaxial layer with V-doped front and back surfaces on the pretreated SiC substrate, and performing high-temperature annealing on the homoepitaxial layer; the annealed sample is irradiated, that is, different types of irradiation defects are introduced into the V-doped SiC material, and the V-doped SiC material and the V deep energy level center have a synergistic effect, so that a multi-carrier composite channel is formed, and accurate regulation and control of the service life of carriers are realized; and manufacturing a metal electrode and an insulating passivation layer structure on the SiC surface of the irradiated epitaxial wafer through photoetching, etching and metallization processes. According to the method, the service life of the current carrier can be accurately controlled, the method is stable at high temperature and uniform in space, and the method can be used for preparing different types of SiC photoconductive switch devices.

The invention discloses a gallium oxide photoconductive switch device with a light modulation field limiting ring and a preparation method of the gallium oxide photoconductive switch device. The device comprises a Fe-doped gallium oxide substrate; the first N + gallium oxide layer and the second N + gallium oxide layer are respectively arranged on the upper surface and the lower surface of the substrate; the anode metal electrode is arranged in the center of the upper surface of the first N + gallium oxide layer; the cathode metal electrode is arranged in the center of the lower surface of the second N + gallium oxide layer; the dielectric passivation layer covers the upper surface and the lower surface of the whole device, and an electrode region is exposed; wherein a plurality of grooves are formed in the first N + gallium oxide layer; a plurality of grooves are located in the peripheral area of the edge of the anode metal electrode and penetrate through the whole first N + gallium oxide layer; the grooves are filled with Mg-doped semi-insulating gallium oxide materials so as to form Mg-doped light modulation field limiting rings. According to the structural design, the peak field intensity of the edge of the electrode and the current density of the edge of the electrode are reduced, and the withstand voltage threshold and the reliability of the device are improved while the low on-resistance is ensured.