Monolithic integrated nBnBn four-waveband detector

Abstract

The invention belongs to the technical field of semiconductor photoelectric detectors, and particularly relates to a monolithic integrated nBnBn four-waveband detector, which adopts a longitudinal integrated structure. The monolithic integrated nBnBn four-waveband detector comprises a GaSb substrate, an n-type short-wave channel ohmic contact layer, a first metal electrode layer, a short-wave channel absorption layer, a first barrier layer, a medium-wave channel absorption layer, an n-type medium-wave channel contact layer, a common electrode layer, a long-wave channel absorption layer, a second barrier layer, an ultra-long-wave channel absorption layer, an n-type ultra-long-wave channel contact layer, a second metal electrode layer and a passivation layer. The detector with four wave bands in the detector has an integrated structure from bottom to top, has a four-absorption-layer structure, can respectively detect the four wave bands through voltage control, has the advantages of highresponsivity, low dark current and the like, reduces the false alarm rate, reduces the size of a device, and reduces the complexity of a preparation process and a detection system.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetectors, in particular to a single-chip integrated nBnBn four-band detector. Background technique [0002] As the core component of infrared technology, infrared detectors are widely used in the fields of infrared detection and imaging. Infrared detectors can be divided into two types: cooling type and uncooled type. Cooling type infrared detectors are mainly used in high-end applications such as military and aerospace due to their fast response speed and high sensitivity. [0003] However, the existing infrared detectors usually detect in a single band, and the functional layer is only sensitive to one kind of light to be detected. Although a two-color detection structure has appeared in recent years, it is difficult to achieve selective detection of more than three bands integrated on one chip. Detectors are currently implemented by integrating multiple sensors and then selecting t...

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Problems solved by technology

[0003] However, the existing infrared detectors usually detect in a single band, and the functional layer is only sensitive to one kind of light to be detected. Although a two-color detection structure has appeared in recent years, it is difficult to achieve selective detection of more than three bands integrated on one chip. Detectors are now implemented by integrating a variety of sensors and then selecting them through a selection circuit, so the size of the detector is relatively large, and the existing semiconductor manufacturing technology is not fully utilized

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