32results about How to "Reduce surface leakage current" patented technology

The invention belongs to the technical field of semiconductors, and discloses a double-active layer Cu2O / SnOp channel thin film transistor and a preparation method thereof. The thin film transistor comprises a substrate, a grid electrode, a grid insulating medium layer, a first semiconductor active layer, a second semiconductor active layer, a source electrode and a drain electrode from bottom to top, wherein the first semiconductor active layer is a p-type SnO semiconductor active layer and the second semiconductor active layer is a Cu2O semiconductor active layer. According to the p-type SnO semiconductor active layer, oxygen vacancy is imported to properly optimize the valence band structure, so that the hole migration rate is improved; and through depositing a layer of Cu2O membrane on the SnO active layer, the surface leakage current is decreased, the switch current ratio is improved, the influences on the SnO layer from the external oxygen and water are decreased and the device stability is improved.

The invention provides a diffusion-free avalanche photodiode and a preparation method thereof. The avalanche photodiode comprises a substrate. A buffer layer, a diffusion impervious layer, an avalanche multiplication layer, an electric field control layer, a gradual change layer, a light absorption layer, a corrosion stop layer, a window layer and a contact layer sequentially grow on the surface of the substrate. The window layer is placed at the central position of the corrosion stop layer. Medium insulating layers of the corrosion stop layer are covered both on the periphery of the window layer and above the contact layer, and the medium insulating layers are provided with annular channels. The circular window layer is corroded by selectivity corrosion, the medium insulating layers are covered on the parts outside the window layer, the size of the window layer can directly define the light sensitive area of the avalanche photodiode, and so that the avalanche photodiode is suitable for working at different rate environments. In addition, although a slightly strong electric field exists on one side, close to the edge of the window layer, of the light absorption layer, edge punch-through can not occur on the avalanche multiplication layer.

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first dielectric layer, and a first electrode. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The first dielectric layer is disposed on the second type semiconductor layer. The first dielectric layer has at least one opening therein to expose at least one part of the second type semiconductor layer. A first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 [mu]m. The first electrode is partially disposed on the first dielectric layer and is electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer. Since the first shortest distance is greater than or equal to 1 [mu]m, the number of electric carriers diffused to the side surface of the micro-LED is very few or nearly zero so that the light-emitting efficiency of the micro-LED is increased.

The invention provides a novel microwave GaN transistor with high electron mobility. The novel microwave GaN transistor with high electron mobility comprises a semi-insulation substrate, an aluminum nitride nucleating layer, a GaN buffer layer and AlGaN barrier layer which are arranged from bottom to top, wherein a source cap layer and a drain cap layer are arranged on the AlGaN barrier layer, a source electrode is arranged on an upper surface of the source cap layer, a drain electrode is arranged on a surface of the drain cap layer, a gate electrode is arranged between the source electrode and the drain electrode and is near to an end of the source electrode, a high gate is arranged between the source cap layer and the drain cap layer, an upper surface of the high gate is higher than a bottom surface by 5 nanometers, a left concave region is formed right below a part between the source electrode and the gate electrode and on an upper surface of the GaN buffer layer and is formed frompits, and a right concave region is formed right below a part between the drain electrode and the gate electrode and the upper surface of the GaN buffer layer and is formed from pits. By the novel microwave GaN transistor, the transconductance region of the device is improved, the saturation output power of the device is increased, and the DC characteristic and the frequency characteristic of thedevice are improved.

The disclosure provides an ion implantation method, a method for preparing a mercury cadmium telluride chip, and a mercury cadmium telluride chip. The preparation method for the mercury cadmium telluride chip includes: forming a dielectric film layer on the P-type mercury cadmium telluride substrate; The P-type mercury cadmium telluride substrate and the dielectric film layer are subjected to a heat treatment process; a photoresist mask layer is formed above the dielectric film layer, and the photoresist mask layer is patterned to A grid-shaped ion implantation window is formed on the photoresist mask layer; through the ion implantation window, high-energy ions are implanted into the surface of the P-type HgCdTe substrate, so that the P-type HgCdTe Forming an N-type doped region in the surface of the mercury substrate; removing the photoresist mask layer; performing a heat treatment process on the P-type HgCdTe substrate. This method effectively protects the dielectric film layer in the implantation region that is not bombarded by high-energy ions, and reduces the damage to the good interface formed by heat treatment between the dielectric film layer and HgCdTe.

The invention belongs to the technical field of detector chip manufacture, and relates to a mesa-type photodiode with low dark current in a graded potential barrier; an N-type mesa, an absorption mesa and a P-type mesa connected from top to bottom of the mesa-type photodiode; each mesa The surface of the mesa photodiode is covered with a passivation layer; a graded barrier layer is arranged in the absorption mesa of the mesa photodiode, and the graded barrier layer has a nine-layer structure from top to bottom; an N electrode is arranged on the N-type mesa, and the The P-type mesa is provided with a P electrode, and the P electrode and the N electrode form a coplanar electrode; the present invention reduces the surface leakage current and the bulk dark current of the mesa photodiode by adopting a hierarchical barrier structure, thereby improving the mesa photodiode. reliability.

The invention discloses a passivation method for the surface of cadmium zinc telluride crystal, that is, the passivation solution is firstly prepared and calculated according to the mass ratio, that is, the aqueous solution of thiourea: deionized water is 9:100, and then the prepared Put the cadmium zinc telluride chip of the electrode into the passivation solution for passivation for 11-19 minutes, immediately wash it with a large amount of deionized water for 3-5 times, then wash it once with absolute ethanol, and finally dry it with an ear washing ball, that is Complete passivation of the CdZnTe crystal surface. The passivation method for the surface of the cadmium zinc telluride crystal has the advantages of simple passivation process and low processing cost, and effectively reduces the surface leakage current of the cadmium zinc telluride crystal.

The invention discloses a passivation process method for gallium nitride and gallium nitride ternary alloy. The process method comprises the following steps: carrying out primary passivation on clean gallium nitride and gallium nitride ternary alloy by taking nitric acid, ruthenium trichloride or sodium sulfide as a passivation solution; after first passivation cleaning, epitaxially growing a silicon dioxide or silicon nitride film for second passivation; and after the device is formed, carrying out third passivation by taking nitric acid, ruthenium trichloride or sodium sulfide as a passivation solution. By using the passivation process provided by the invention, a surface leakage current and a dark current of gallium nitride and gallium nitride ternary alloy device are effectively reduced, and the performance of the device is improved.

The invention provides an ion implantation method, a preparation method of a tellurium-cadmium-mercury chip and the tellurium-cadmium-mercury chip. The preparation method of the tellurium-cadmium-mercury chip comprises the following steps: forming a dielectric film layer above a P-type tellurium-cadmium-mercury substrate; performing a heat treatment process on the P-type mercury cadmium telluridesubstrate and the dielectric film layer; forming a photoresist mask layer above the dielectric film layer, and performing patterning processing on the photoresist mask layer to form a latticed ion implantation window on the photoresist mask layer; injecting high-energy ions into the surface of the P-type mercury cadmium telluride substrate through the ion injection window so as to form an N-type doped region in the surface of the P-type mercury cadmium telluride substrate; removing the photoresist mask layer; and carrying out a heat treatment process on the P-type mercury cadmium telluride substrate. According to the method, the dielectric film layer which is not bombarded by high-energy ions in the injection area is effectively protected, and damage to a good interface formed between thedielectric film layer and mercury cadmium telluride through heat treatment is reduced.

The invention discloses an III-nitride semiconductor avalanche photodetector which comprises a substrate and an epitaxial layer that grows above the substrate. According to a sequence from bottom to top, the epitaxial layer is successively provided with an unintentional adulteration nitride buffer layer, an unintentional adulteration nitride transition layer, a heavy adulteration n-type nitride ohmic electrode contact layer, a heterogeneous light adulteration p-type nitride active layer, a p-type adulteration nitride layer and a heavy adulteration p-type nitride ohmic electrode contact layer. Simultaneously, the invention discloses a device manufacturing method, the method comprises the steps of taking advantage of multiple times of photoetching and dry etching to make steps on the periphery of a device, respectively carrying out vapor deposition of p-type and n-type metal electrodes on the p-type ohmic contact layer and the n-type ohmic contact layer, and forming ohmic contact with a semiconductor through an alloy. According to the device structure, the electric field intensity of an avalanche photodiode active area can be enhanced, and the properties of low dark current, high gain and high detection responsivity of the nitride avalanche photodetector can be realized by effectively increasing the field intensity of the active area and reducing the marginal leakage current of the device.

First, multiple Thin Film Transistors (TFT) are formed on a base plate. Next, an insulation layer and a metal layer are formed on TFT in sequence. The metal layer includes a source pole and a drain pole connected to each TFT, and there is a channel region between the source pole and the drain pole. Then, an organic material layer is covered on the metal layer and the insulation layer, and a transparent conducting layer is formed on the organic material layer. In the procedure of forming the organic material layer, since the insulation layer is densified synchronistically, route of current leakage of the base plate is blocked out so as to reduce current leakage on surface.

The invention belongs to the technical field of semiconductor photodetectors, and specifically relates to a visible-ultraviolet dual-color detector. The visible-ultraviolet dual-color detector adopts a vertically integrated structure, including an nGaN substrate, an n-type GaN contact layer, a lower metal electrode, and an AlGaN Matching layer, AlGaN ultraviolet absorbing layer, two-dimensional boron nitride thin film barrier layer, topological insulator visible light absorbing layer, n-type topological insulator thin film contact layer, upper metal electrode and passivation layer. The detectors of the two bands in the detector have a bottom-up integrated structure, which can realize visible and ultraviolet dual-color detection by controlling the bias voltage, reduce the false alarm rate, reduce the size of the device, and reduce the cost of the preparation process and detection system. Complexity.

The invention provides a thin-film transistor comprising a substrate, a grid electrode which is arranged on the substrate, a grid insulating layer which is arranged on the substrate and covers the grid electrode, an indium gallium zinc oxide channel layer which covers the surface of the grid insulating layer, and a gallium oxide zinc layer which is arranged on the surface of the channel layer. A source electrode and a drain electrode are formed on the two opposite sides of the gallium oxide zinc layer. The thin-film transistor with the structure has advantages of being low in surface leakage current and great in current switch ratio.

The invention discloses a SiC Schottky power diode. The SiC Schottky power diode comprises an N-type 4H-SiC substrate, a P-type 4H-SiC isolation layer and an N-type 4H-SiC epitaxial layer, wherein the thickness of the N-type 4H-SiC epitaxial layer is 4-6 [mu]m; an inverted trapezoidal anode groove and an isolation groove are engraved in the middle of the epitaxial layer, and the tops of two ends of the epitaxial layer avoid inwards to form an isolation region; the isolation region and the isolation groove are filled with an insulating medium to form a current dredging structure; and the epitaxial layer is provided with an N+ injection region and a P+ injection protection region. The SiC Schottky power diode comprises: a cathode ohmic contact metal layer covering the N+ injection region; a first passivation layer arranged on the P+ injection protection region; a second passivation layer arranged at the bottom of the anode groove; an anode Schottky contact metal layer covering part of the surface of the first passivation layer, the surface of the anode groove and the surface of the second passivation layer; and a third passivation layer covering the remaining surface of the first passivation layer and extending towards the metal layers on the two sides. According to the invention, the performance and yield of the Schottky power diode under high working voltage are improved.

The invention provides a diffusion-free avalanche photodiode and a preparation method thereof. The avalanche photodiode comprises a substrate. A buffer layer, a diffusion impervious layer, an avalanche multiplication layer, an electric field control layer, a gradual change layer, a light absorption layer, a corrosion stop layer, a window layer and a contact layer sequentially grow on the surface of the substrate. The window layer is placed at the central position of the corrosion stop layer. Medium insulating layers of the corrosion stop layer are covered both on the periphery of the window layer and above the contact layer, and the medium insulating layers are provided with annular channels. The circular window layer is corroded by selectivity corrosion, the medium insulating layers are covered on the parts outside the window layer, the size of the window layer can directly define the light sensitive area of the avalanche photodiode, and so that the avalanche photodiode is suitable for working at different rate environments. In addition, although a slightly strong electric field exists on one side, close to the edge of the window layer, of the light absorption layer, edge punch-through can not occur on the avalanche multiplication layer.

The invention relates to a method for passivating the surface of an InAlSb infrared detector. The steps are as follows: step 1: soaking the InAlSb detector chip in an organic solvent; step 2: soaking the InAlSb detector chip in an acidic solution; step 3 : Put the InAlSb detector chip into the anodizing solution, set the anodizing current and connect the metal electrode, when the resistance value on the surface of the chip reaches the set value, cut off the anodizing power supply to form an anodizing film; step 4: cleaning InAlSb detector chip; step five: put it into PECVD equipment, and prepare a dielectric film. The method can effectively reduce the leakage current on the surface of the infrared detector and improve the impedance of the device.