32results about How to "Reduce surface leakage current" patented technology

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first dielectric layer, and a first electrode. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The first dielectric layer is disposed on the second type semiconductor layer. The first dielectric layer has at least one opening therein to expose at least one part of the second type semiconductor layer. A first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 [mu]m. The first electrode is partially disposed on the first dielectric layer and is electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer. Since the first shortest distance is greater than or equal to 1 [mu]m, the number of electric carriers diffused to the side surface of the micro-LED is very few or nearly zero so that the light-emitting efficiency of the micro-LED is increased.

The disclosure provides an ion implantation method, a method for preparing a mercury cadmium telluride chip, and a mercury cadmium telluride chip. The preparation method for the mercury cadmium telluride chip includes: forming a dielectric film layer on the P-type mercury cadmium telluride substrate; The P-type mercury cadmium telluride substrate and the dielectric film layer are subjected to a heat treatment process; a photoresist mask layer is formed above the dielectric film layer, and the photoresist mask layer is patterned to A grid-shaped ion implantation window is formed on the photoresist mask layer; through the ion implantation window, high-energy ions are implanted into the surface of the P-type HgCdTe substrate, so that the P-type HgCdTe Forming an N-type doped region in the surface of the mercury substrate; removing the photoresist mask layer; performing a heat treatment process on the P-type HgCdTe substrate. This method effectively protects the dielectric film layer in the implantation region that is not bombarded by high-energy ions, and reduces the damage to the good interface formed by heat treatment between the dielectric film layer and HgCdTe.

The invention belongs to the technical field of detector chip manufacture, and relates to a mesa-type photodiode with low dark current in a graded potential barrier; an N-type mesa, an absorption mesa and a P-type mesa connected from top to bottom of the mesa-type photodiode; each mesa The surface of the mesa photodiode is covered with a passivation layer; a graded barrier layer is arranged in the absorption mesa of the mesa photodiode, and the graded barrier layer has a nine-layer structure from top to bottom; an N electrode is arranged on the N-type mesa, and the The P-type mesa is provided with a P electrode, and the P electrode and the N electrode form a coplanar electrode; the present invention reduces the surface leakage current and the bulk dark current of the mesa photodiode by adopting a hierarchical barrier structure, thereby improving the mesa photodiode. reliability.

The invention discloses a passivation method for the surface of cadmium zinc telluride crystal, that is, the passivation solution is firstly prepared and calculated according to the mass ratio, that is, the aqueous solution of thiourea: deionized water is 9:100, and then the prepared Put the cadmium zinc telluride chip of the electrode into the passivation solution for passivation for 11-19 minutes, immediately wash it with a large amount of deionized water for 3-5 times, then wash it once with absolute ethanol, and finally dry it with an ear washing ball, that is Complete passivation of the CdZnTe crystal surface. The passivation method for the surface of the cadmium zinc telluride crystal has the advantages of simple passivation process and low processing cost, and effectively reduces the surface leakage current of the cadmium zinc telluride crystal.

First, multiple Thin Film Transistors (TFT) are formed on a base plate. Next, an insulation layer and a metal layer are formed on TFT in sequence. The metal layer includes a source pole and a drain pole connected to each TFT, and there is a channel region between the source pole and the drain pole. Then, an organic material layer is covered on the metal layer and the insulation layer, and a transparent conducting layer is formed on the organic material layer. In the procedure of forming the organic material layer, since the insulation layer is densified synchronistically, route of current leakage of the base plate is blocked out so as to reduce current leakage on surface.

The invention provides a thin-film transistor comprising a substrate, a grid electrode which is arranged on the substrate, a grid insulating layer which is arranged on the substrate and covers the grid electrode, an indium gallium zinc oxide channel layer which covers the surface of the grid insulating layer, and a gallium oxide zinc layer which is arranged on the surface of the channel layer. A source electrode and a drain electrode are formed on the two opposite sides of the gallium oxide zinc layer. The thin-film transistor with the structure has advantages of being low in surface leakage current and great in current switch ratio.

The invention provides a diffusion-free avalanche photodiode and a preparation method thereof. The avalanche photodiode comprises a substrate. A buffer layer, a diffusion impervious layer, an avalanche multiplication layer, an electric field control layer, a gradual change layer, a light absorption layer, a corrosion stop layer, a window layer and a contact layer sequentially grow on the surface of the substrate. The window layer is placed at the central position of the corrosion stop layer. Medium insulating layers of the corrosion stop layer are covered both on the periphery of the window layer and above the contact layer, and the medium insulating layers are provided with annular channels. The circular window layer is corroded by selectivity corrosion, the medium insulating layers are covered on the parts outside the window layer, the size of the window layer can directly define the light sensitive area of the avalanche photodiode, and so that the avalanche photodiode is suitable for working at different rate environments. In addition, although a slightly strong electric field exists on one side, close to the edge of the window layer, of the light absorption layer, edge punch-through can not occur on the avalanche multiplication layer.

The invention relates to a method for passivating the surface of an InAlSb infrared detector. The steps are as follows: step 1: soaking the InAlSb detector chip in an organic solvent; step 2: soaking the InAlSb detector chip in an acidic solution; step 3 : Put the InAlSb detector chip into the anodizing solution, set the anodizing current and connect the metal electrode, when the resistance value on the surface of the chip reaches the set value, cut off the anodizing power supply to form an anodizing film; step 4: cleaning InAlSb detector chip; step five: put it into PECVD equipment, and prepare a dielectric film. The method can effectively reduce the leakage current on the surface of the infrared detector and improve the impedance of the device.