32results about How to "Reduce surface leakage current" patented technology

A micro-light-emitting diode (micro-LED) includes a first type semiconductor layer, a second type semiconductor, a first dielectric layer, and a first electrode. The second type semiconductor layer is disposed on or above the first type semiconductor layer. The first dielectric layer is disposed on the second type semiconductor layer. The first dielectric layer has at least one opening therein to expose at least one part of the second type semiconductor layer. A first shortest distance between an edge of the opening of the first dielectric layer and a side surface of the second type semiconductor layer is greater than or equal to 1 [mu]m. The first electrode is partially disposed on the first dielectric layer and is electrically coupled with the exposed part of the second type semiconductor layer through the opening of the first dielectric layer. Since the first shortest distance is greater than or equal to 1 [mu]m, the number of electric carriers diffused to the side surface of the micro-LED is very few or nearly zero so that the light-emitting efficiency of the micro-LED is increased.

First, multiple Thin Film Transistors (TFT) are formed on a base plate. Next, an insulation layer and a metal layer are formed on TFT in sequence. The metal layer includes a source pole and a drain pole connected to each TFT, and there is a channel region between the source pole and the drain pole. Then, an organic material layer is covered on the metal layer and the insulation layer, and a transparent conducting layer is formed on the organic material layer. In the procedure of forming the organic material layer, since the insulation layer is densified synchronistically, route of current leakage of the base plate is blocked out so as to reduce current leakage on surface.

The invention provides a thin-film transistor comprising a substrate, a grid electrode which is arranged on the substrate, a grid insulating layer which is arranged on the substrate and covers the grid electrode, an indium gallium zinc oxide channel layer which covers the surface of the grid insulating layer, and a gallium oxide zinc layer which is arranged on the surface of the channel layer. A source electrode and a drain electrode are formed on the two opposite sides of the gallium oxide zinc layer. The thin-film transistor with the structure has advantages of being low in surface leakage current and great in current switch ratio.

The invention provides a diffusion-free avalanche photodiode and a preparation method thereof. The avalanche photodiode comprises a substrate. A buffer layer, a diffusion impervious layer, an avalanche multiplication layer, an electric field control layer, a gradual change layer, a light absorption layer, a corrosion stop layer, a window layer and a contact layer sequentially grow on the surface of the substrate. The window layer is placed at the central position of the corrosion stop layer. Medium insulating layers of the corrosion stop layer are covered both on the periphery of the window layer and above the contact layer, and the medium insulating layers are provided with annular channels. The circular window layer is corroded by selectivity corrosion, the medium insulating layers are covered on the parts outside the window layer, the size of the window layer can directly define the light sensitive area of the avalanche photodiode, and so that the avalanche photodiode is suitable for working at different rate environments. In addition, although a slightly strong electric field exists on one side, close to the edge of the window layer, of the light absorption layer, edge punch-through can not occur on the avalanche multiplication layer.

The invention relates to a method for passivating the surface of an InAlSb infrared detector. The steps are as follows: step 1: soaking the InAlSb detector chip in an organic solvent; step 2: soaking the InAlSb detector chip in an acidic solution; step 3 : Put the InAlSb detector chip into the anodizing solution, set the anodizing current and connect the metal electrode, when the resistance value on the surface of the chip reaches the set value, cut off the anodizing power supply to form an anodizing film; step 4: cleaning InAlSb detector chip; step five: put it into PECVD equipment, and prepare a dielectric film. The method can effectively reduce the leakage current on the surface of the infrared detector and improve the impedance of the device.