Refrigeration infrared detector and preparation method thereof

Abstract

The invention provides a refrigeration infrared detector and a preparation method thereof, and the preparation method comprises the following steps: providing a substrate, and forming a superlattice composite layer on the substrate; executing a first cleaning and surface treatment process; forming a first passivation layer on the superlattice composite layer; forming a hard mask layer with an opening on the first passivation layer, sequentially etching the first passivation layer and the superlattice composite layer by taking the hard mask layer as a mask to form a groove and a table surface, and removing the hard mask layer; executing a second cleaning and surface treatment process; forming a second passivation layer on the first passivation layer, wherein the second passivation layer also covers the groove and the mesa; and etching the first passivation layer and the second passivation layer to form an open pore, and forming a metal electrode in the open pore. According to the invention, cleaning and surface treatment processes are carried out before the passivation layer is formed each time, so that the surface leakage current of the device can be reduced, and the performance of the device is improved.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a cooling infrared detector and a preparation method thereof. Background technique [0002] In the current research and manufacture of cooled infrared detectors, dark current is an important indicator for evaluating device performance. The smaller the dark current, the better the performance of the device. [0003] The dark current is mainly composed of the internal dark current of the device and the surface leakage current. At present, the surface leakage current is mainly optimized by passivation, such as SiO2 passivation, SI3N4 passivation, and sulfuration, hydrogenation, PI passivation, ALD passivation and other technologies to improve . However, the current mainstream passivation technology is far from the theoretical value, and is affected by factors such as doping, device size, temperature, corrosion rate, and passivation technology. The performance of the de...

AI Technical Summary

Problems solved by technology

However, the current mainstream passivation technology is far from the theoretical value, and is affected by factors such as doping, device size, temperature, corrosion rate, and passivation technology. The performance of the detection rate is very unstable and cannot meet the design requirements. To improve the detection rate of the long-wave band, the dark current of the device must be reduced.

Images