Novel microwave GaN transistor with high electron mobility

Abstract

The invention provides a novel microwave GaN transistor with high electron mobility. The novel microwave GaN transistor with high electron mobility comprises a semi-insulation substrate, an aluminum nitride nucleating layer, a GaN buffer layer and AlGaN barrier layer which are arranged from bottom to top, wherein a source cap layer and a drain cap layer are arranged on the AlGaN barrier layer, a source electrode is arranged on an upper surface of the source cap layer, a drain electrode is arranged on a surface of the drain cap layer, a gate electrode is arranged between the source electrode and the drain electrode and is near to an end of the source electrode, a high gate is arranged between the source cap layer and the drain cap layer, an upper surface of the high gate is higher than a bottom surface by 5 nanometers, a left concave region is formed right below a part between the source electrode and the gate electrode and on an upper surface of the GaN buffer layer and is formed frompits, and a right concave region is formed right below a part between the drain electrode and the gate electrode and the upper surface of the GaN buffer layer and is formed from pits. By the novel microwave GaN transistor, the transconductance region of the device is improved, the saturation output power of the device is increased, and the DC characteristic and the frequency characteristic of thedevice are improved.

Description

technical field [0001] The invention relates to an electron mobility transistor, in particular to a novel microwave gallium nitride high electron mobility transistor. Background technique [0002] At the end of the 20th century, gallium nitride (GaN) has become a research hotspot in today's high-frequency and high-power devices and systems due to its large band gap, high electron saturation velocity, high breakdown voltage, and radiation resistance. Gallium Nitride High Electron Mobility Transistor (GaN HEMT), a wide bandgap semiconductor device, has the advantages of high frequency, high power density, high withstand voltage and high efficiency, so it is widely used in civil communications, Internet of Things, oil exploration, aerospace , radar systems and other civil defense have broad application prospects. [0003] In the 21st century, the development of science and technology has shown explosive growth, and the traditional GaN high electron mobility transistors can no ...

AI Technical Summary

Problems solved by technology

However, this type of design often leads to problems such as unsatisfactory withstand voltage of the transistor, large parasitic capacitance, and narrow transconductance saturation region, which has a great impact on important performances such as output power and power-added efficiency of the device.

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