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CZT film composite material with composite passivation layer, nuclear radiation detection device and preparation method thereof

A composite material and passivation layer technology, applied in semiconductor devices, electrical components, final product manufacturing, etc., can solve problems such as difficulty in meeting large-area detectors, difficulty in CZT single crystals, and long growth cycles, and achieve improved electrical performance, The effect of reducing surface leakage current and small leakage current

Inactive Publication Date: 2020-12-18
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to problems such as high preparation cost, long growth cycle and difficulty in preparing high-quality, large-area CZT single crystals, CZT single crystals are limited by technology and cost, and it is difficult to meet the needs of large-area detectors. The focus of researchers has turned to Polycrystalline CZT film

Method used

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  • CZT film composite material with composite passivation layer, nuclear radiation detection device and preparation method thereof
  • CZT film composite material with composite passivation layer, nuclear radiation detection device and preparation method thereof

Examples

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Effect test

Embodiment 1

[0037] In this example, see figure 1 and figure 2, a cadmium zinc telluride film composite material with a composite passivation layer, the structure of the composite CZT film in the form of a sandwich structure of the substrate-semiconductor-composite passivation layer is adopted, and the substrate, the CZT film, and the composite passivation layer are sequentially formed. The three parts of the layer are stacked and deposited; the high-purity CZT polycrystalline material with a purity of not less than 99% is selected as the raw material for near-space sublimation, and the CZT film is prepared on the substrate by the near-space sublimation method, and then the CZT film is polished and After corrosion, the composite passivation layer of cadmium telluride and zinc sulfide is continuously grown on the CZT film by radio frequency magnetron sputtering deposition method, and the composite material of cadmium zinc telluride film with the composite passivation layer is obtained. se...

Embodiment 2

[0055] This embodiment is basically the same as Embodiment 1, especially in that:

[0056] In this example, see figure 1 and figure 2 , a cadmium zinc telluride film composite material with a composite passivation layer, the structure of the composite CZT film in the form of a sandwich structure of the substrate-semiconductor-composite passivation layer is adopted, and the substrate, the CZT film, and the composite passivation layer are sequentially formed. The three parts of the layer are stacked and deposited; the high-purity CZT polycrystalline material with a purity of not less than 99% is selected as the raw material for near-space sublimation, and the CZT film is prepared on the substrate by the near-space sublimation method, and then the CZT film is polished and After corrosion, the composite passivation layer of cadmium telluride and zinc sulfide is continuously grown on the CZT film by radio frequency magnetron sputtering deposition method, and the composite materia...

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Abstract

The invention discloses a CZT film composite material with a composite passivation layer, a nuclear radiation detection device and a preparation method thereof, which belong to the technical field ofsemiconductor detection material manufacturing. According to the method, a cadmium zinc telluride film is deposited on a conductive glass substrate through a near-space sublimation method, and after polishing and corrosion, a cadmium zinc telluride and zinc sulfide composite passivation layer is sequentially deposited on the cadmium zinc telluride film through a magnetron sputtering method. And then annealing is carried out in an N2 atmosphere. And after photoetching and dry etching, a gold electrode is continuously deposited on the film by using an electron beam evaporation method. Due to theexistence of the passivation layer, the surface of the polished and corroded cadmium zinc telluride film is well protected, and the leakage current of the surface of the cadmium zinc telluride film is reduced, so that the performance of a cadmium zinc telluride detector is improved; the film material prepared by the invention has an important significance and application prospect in the aspects of safety monitoring and radiation protection in the fields of public safety, military affairs, nuclear industry, nuclear medicine, scientific research, aerospace and the like.

Description

technical field [0001] The invention relates to a cadmium zinc telluride material, a device and a preparation method thereof, in particular to a cadmium zinc telluride film and a preparation method thereof, and also relates to a preparation method for rapidly preparing a cadmium zinc telluride material, which belongs to the manufacturing technology of inorganic non-metallic materials field. Background technique [0002] Cadmium zinc telluride (CdZnTe), hereinafter referred to as CZT, is an important compound semiconductor material. Due to its high average atomic number, it can be used to detect high-energy particle rays, such as γ-rays and X-rays. Compared with common silicon (Si), germanium (Ge) and other semiconductor materials, CZT has higher intrinsic resistivity and larger forbidden band width, and is a good compound semiconductor material for making radiation detectors. These advantages make CZT-based detectors have the characteristics of small device size, high energ...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/08H01L31/18
CPCH01L31/0216H01L31/085H01L31/1832H01L31/1836Y02P70/50
Inventor 陈哲别佳瑛陈卓睿尚艺黄浩斐李洪伟黄健唐可王林军
Owner SHANGHAI UNIV
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