A Visible-Ultraviolet Dual Color Detector

Abstract

The invention belongs to the technical field of semiconductor photodetectors, and specifically relates to a visible-ultraviolet dual-color detector. The visible-ultraviolet dual-color detector adopts a vertically integrated structure, including an nGaN substrate, an n-type GaN contact layer, a lower metal electrode, and an AlGaN Matching layer, AlGaN ultraviolet absorbing layer, two-dimensional boron nitride thin film barrier layer, topological insulator visible light absorbing layer, n-type topological insulator thin film contact layer, upper metal electrode and passivation layer. The detectors of the two bands in the detector have a bottom-up integrated structure, which can realize visible and ultraviolet dual-color detection by controlling the bias voltage, reduce the false alarm rate, reduce the size of the device, and reduce the cost of the preparation process and detection system. Complexity.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetectors, and in particular relates to a visible-ultraviolet dual-color detector. Background technique [0002] Photodetectors are widely used in various fields such as national economy and military affairs. Photodetectors based on detection in different wavelength bands play an important role in the detection of different fields. In the visible and near-infrared, photodetectors are mainly used in ray measurement and detection, industrial automatic control, photometric measurement, etc.; in the ultraviolet band, the main uses are ultraviolet guidance, ultraviolet warning, ultraviolet communication, ultraviolet countermeasures, power monitoring and other military and civilian applications. field. The traditional group III nitride material system represented by gallium nitride / aluminum gallium nitride system is the best material for ultraviolet detection, but it is difficult to achieve...

AI Technical Summary

Problems solved by technology

The traditional group III nitride material system represented by gallium nitride / aluminum gallium nitride system is the best material for ultraviolet detection, but it is difficult to achieve visible and near-infrared detection. Photodetectors based on silicon and GaAs can be used in visible light and The near-infrared field is becoming more and more mature, but it is difficult to expand to ultraviolet detection. Therefore, it is difficult to achieve ultraviolet and visible multi-band detection with a single material system. A new method is urgently needed to realize adjustable ultraviolet-visible two-color integrated detection.

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