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A Visible-Ultraviolet Dual Color Detector

A dual-color detector and visible light technology, which is applied in the field of visible-ultraviolet dual-color detectors, can solve the problems of difficult-to-visible and near-infrared detection, and difficult to realize ultraviolet, so as to improve the monolithic integration, solve the problem of low photoresponsivity, low photoresponsivity, etc. Good absorption properties

Active Publication Date: 2022-04-01
TIANJIN JINHANG INST OF TECH PHYSICS
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Problems solved by technology

The traditional group III nitride material system represented by gallium nitride / aluminum gallium nitride system is the best material for ultraviolet detection, but it is difficult to achieve visible and near-infrared detection. Photodetectors based on silicon and GaAs can be used in visible light and The near-infrared field is becoming more and more mature, but it is difficult to expand to ultraviolet detection. Therefore, it is difficult to achieve ultraviolet and visible multi-band detection with a single material system. A new method is urgently needed to realize adjustable ultraviolet-visible two-color integrated detection.

Method used

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  • A Visible-Ultraviolet Dual Color Detector
  • A Visible-Ultraviolet Dual Color Detector

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Embodiment 1

[0066] see figure 1 , the present embodiment provides a visible-ultraviolet two-color detector, which sequentially includes an n-type GaN substrate 1, an n-type GaN contact layer 2, a lower metal electrode layer 3, an n-type AlGaN matching layer 4, and an AlGaN ultraviolet absorber from bottom to top. Layer 5, two-dimensional boron nitride thin film barrier layer 6, topological insulator visible light absorbing layer 7, n-type topological insulator thin film contact layer 8, upper metal electrode layer 10 and passivation layer 9.

[0067] Among them, n-type GaN substrate 1, n-type GaN contact layer 2, lower metal electrode layer 3, n-type AlGaN matching layer 4, AlGaN ultraviolet absorbing layer 5, two-dimensional boron nitride film barrier layer 6, topological insulator visible light absorbing layer A heterojunction is formed between 7 and the n-type topological insulator thin film contact layer 8, and the upper metal electrode layer and the lower metal electrode layer are us...

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Abstract

The invention belongs to the technical field of semiconductor photodetectors, and specifically relates to a visible-ultraviolet dual-color detector. The visible-ultraviolet dual-color detector adopts a vertically integrated structure, including an nGaN substrate, an n-type GaN contact layer, a lower metal electrode, and an AlGaN Matching layer, AlGaN ultraviolet absorbing layer, two-dimensional boron nitride thin film barrier layer, topological insulator visible light absorbing layer, n-type topological insulator thin film contact layer, upper metal electrode and passivation layer. The detectors of the two bands in the detector have a bottom-up integrated structure, which can realize visible and ultraviolet dual-color detection by controlling the bias voltage, reduce the false alarm rate, reduce the size of the device, and reduce the cost of the preparation process and detection system. Complexity.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetectors, and in particular relates to a visible-ultraviolet dual-color detector. Background technique [0002] Photodetectors are widely used in various fields such as national economy and military affairs. Photodetectors based on detection in different wavelength bands play an important role in the detection of different fields. In the visible and near-infrared, photodetectors are mainly used in ray measurement and detection, industrial automatic control, photometric measurement, etc.; in the ultraviolet band, the main uses are ultraviolet guidance, ultraviolet warning, ultraviolet communication, ultraviolet countermeasures, power monitoring and other military and civilian applications. field. The traditional group III nitride material system represented by gallium nitride / aluminum gallium nitride system is the best material for ultraviolet detection, but it is difficult to achieve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0304H01L31/032H01L31/0352H01L31/109H01L31/11H01L31/101
CPCH01L31/109H01L31/11H01L31/03529H01L31/03044H01L31/03048H01L31/032H01L31/1013
Inventor 张云霄李爱民张远祥
Owner TIANJIN JINHANG INST OF TECH PHYSICS
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