62 results about "Topological insulator" patented technology

The invention discloses a temperature control system and method of a micro-fluidic chip, and relates to the technical field of micro-fluidic temperature control, and the method comprises the following steps: in the manufacturing process of the micro-fluidic chip, embedding topological insulator nanowires into a substrate in a directional arrangement mode to form a pre-locking array, and meanwhile, generating an anisotropic heat conduction network under the continuous action of a sound-magnetic field, a topological vortex invariant is calculated, and a heat conduction weight coefficient is generated; arranging a fluorescent layer on the surface of a micro-reaction cavity of the anisotropic heat conduction network, collecting a fluorescence lifetime attenuation curve in real time, and calculating a transient temperature value and a temperature change rate according to a heat conduction constraint variation model and a heat conduction weight system; nonlinear feed-forward compensation power is calculated according to the transient temperature value and the temperature change rate, feedback compensation power is calculated in combination with a deviation field of the target temperature and the real-time temperature, and a compensation power instruction is generated; according to the method, the thermal pilot frequency domain filtering function is constructed through the compensation power instruction, so that the uniformity and response speed of thermal response are improved.

The invention provides an anisotropic ion transmission supercapacitor based on topological insulator electrolyte. Relates to the technical field of energy storage devices, and comprises an electrolyte module, the electrolyte module comprises an electrolyte, the electrolyte is a network formed by Bi2Se3 nanowires, and the Bi2Se3 nanowires form an anisotropic ion transport channel through a surface modification method of sodium dodecyl benzene sulfonate and vertical orientation arrangement. According to the anisotropic ion transmission supercapacitor based on the topological insulator electrolyte, an electrolyte module with anisotropic ion transmission characteristics is formed by adopting a network formed by topological insulator electrolyte Bi2Se3 nanowires and a surface modification technology. The electrode performance of the electrode module is enhanced through a vertical heterojunction structure, laser reduction, plasma etching and other processes, and therefore the excellent performance of the solid-state supercapacitor in the aspects of high energy density, low-temperature stability and structural stability is achieved.

A quantum frequency converter includes a laminate including at least one topological insulator film and at least one ferromagnetic film that are laminated together. The laminate includes an interface between the topological insulator film and the ferromagnetic film and configured to be irradiated with laser light. The quantum frequency converter includes a magnetic field applying unit configured to apply a magnetic field with a component perpendicular to the interface to the laminate, and a microwave transceiver configured to transmit and receive a microwave to and from the laminate.

The present invention provides a quantum device and a method for manufacturing the same that enable the injection of Cooper pairs into the edges of a two-dimensional topological insulator without the use of heterointerfaces, and the control of the Fermi level at the edges of the two-dimensional topological insulator. [Solution] The quantum device comprises a monolayer 4 of tungsten ditelluride having a 1T' type crystal structure, a first electrode 6a that provides a first potential to a first portion of the monolayer that is a part of the monolayer and separated from the outer periphery of the monolayer, and a second electrode 6b that provides a second potential to a second portion of the monolayer that is a part of the monolayer and includes a certain range of the outer periphery of the monolayer. The first electrode is positioned so that Cooper pairs generated by the application of the first potential to the first portion can penetrate a third portion that is a part of the second portion and includes the certain range. The third portion is a region in which topological superconductivity occurs when Cooper pairs penetrate.

A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having a (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or a combination thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or a combination thereof, where M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes an interconnect structure which includes a topological material. The topological material includes a topological insulator, a topological semimetal, or a combination thereof. A method for manufacturing the semiconductor device is also disclosed.

The present invention relates to a spin current generation device using an SiOC topological insulator, and a manufacturing method therefor. The spin current generation device using an SiOC topological insulator, according to the present invention, comprises: a substrate (200); a gate electrode (303) disposed on the substrate (200); a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); a source electrode (301) disposed on the gate insulating film (100); and a drain electrode (302) disposed on the gate insulating film (100), wherein the gate insulating film (100) is composed of an SiC topological insulator and has a dielectric constant of 0.01 to 2.5.

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

To provide a quantum converter and a quantum conversion method capable of improving conversion efficiency even when light with low loss in an optical fiber is used.SOLUTION: The quantum transducer includes a three dimensional cavity resonator, and a nonmagnetic first insulator film and a ferromagnetic or antiferromagnetic second insulator film that are provided in the three dimensional cavity resonator and are stacked on each other, A laminate including an interface between the first insulator film and the second insulator film, a magnetic field application unit configured to apply a magnetic field including a component perpendicular to the interface to the laminate, and a microwave transmission and reception unit configured to transmit and receive microwaves to and from the laminate, wherein the first insulator film and the second insulator film do not include a topological insulator, the second insulator film has an easy magnetization axis along a first axis perpendicular to the interface, and the laminate is irradiated with laser light from a direction inclined with respect to the first axis. Quantum converters can be used, for example, in quantum computing.SELECTED DRAWING: Figure 1

A system comprising a quantum information engine (QIE). The QIE includes a topological surface state three-dimensional topological insulator (TSS-3DTI) to flow, in a first flow direction from an input side to an output side, electrons having a first spin-momentum. The TSS-3DTI includes a first surface. The first surface has first spin-momentum locked charge carriers and a plurality of first magnetic impurities having a second average nuclear spin polarization. The TSS-3DTI stores information in the first surface at the points of interaction that occur between the plurality of first magnetic impurities interacting with the flowing electrons to exchange, at each point of interaction, a nuclear spin of a respective first magnetic impurity with an electron spin of a respective flowing electron. The system can include at least one surface. The system can harvest energy from other integrated circuits. A method of storing quantum energy is also provided.

The three-dimensional photon antiferromagnetic topological insulator is constructed based on a net zero magnetization three-dimensional gyromagnetic photonic crystal, and primitive cells of the three-dimensional photon antiferromagnetic topological insulator in a Z-axis periodic array are composed of a metal coupling plate, an A-layer photonic crystal, a metal coupling plate and a B-layer photonic crystal which are arranged in a laminated mode; the projections of the gyromagnetic medium columns in the photonic crystals of the A layer and the B layer on an X-Y plane meet a Bercal stacking relationship; the metal coupling plate is provided with a coupling hole and a mounting hole for embedding the permanent magnet; the gyromagnetic dielectric cylinders are clamped between the permanent magnets at the corresponding positions in the adjacent metal coupling plates; the magnetic bias directions provided by the permanent magnets for the adjacent gyromagnetic medium columns clamped by the permanent magnets are opposite. The antiferromagnetic topological insulator constructed by the invention has a complete bulk band gap and adjustable crystal face Dirac mass, and can cooperatively excite a one-dimensional chiral prism state and a two-dimensional chiral surface state. Furthermore, the topological slow light waveguide device with nonreciprocity, robustness and broadband slow light transmission characteristics is designed and realized by utilizing the insulator.

This invention provides a topological quantum device and a method for manufacturing the same, in which an oxide film that suppresses the penetration of Cooper pairs from an S-wave superconductor into a two-dimensional topological insulator is substantially absent. [Solution] The quantum device 2 comprises a two-dimensional topological insulator 6, which is a single layer of tungsten ditelluride having a 1T'-type crystal structure and is disposed on or above the support 4, and a coating 8 covering the two-dimensional topological insulator, which includes an S-wave superconductor 10 having W atoms, Te atoms, and metal atoms. The S-wave superconductor is positioned so that Cooper pairs can penetrate from the S-wave superconductor into the edges of the two-dimensional topological insulator.

The application provides a temperature-adjustable acoustic topological insulator. By adjusting the environmental temperature, the four-fold Dirac point degeneracy at the Gamma point can be opened, resulting in the band inversion between the two-fold degenerate dipole state and quadrupole state, and a topological phase transition is realized. The evolution law of the topological state with temperature is numerically studied, and a new type of topological acoustic switch is constructed. By controlling the topological phase through temperature, the non-contact active regulation of the interface state in the structure can be realized, and the switching effect is exhibited. The research of the application can provide a corresponding reference for the intelligent control of sound and vibration of acoustic topology.

A layer including a topological insulator, the layer including: an arrangement of a plurality of patterns on a surface of the layer, each pattern of the plurality of patterns including at least a non-straight elongated portion. An electronic device including the layer including a topological insulator, and further including first and second electrodes on the layer. Further, the first and second electrodes may be configured to provide electrical connection to the layer. A method of controlling spin transport in the layer includes a topological insulator, the method including: applying circularly polarized light on the layer; and driving an electronic component with a photocurrent produced in the layer by the circularly polarized light.

The invention provides a magnetic memory unit, a manufacturing method thereof and a magnetic memory. The magnetic memory unit comprises a pinning layer, a reference layer, a barrier layer, a free layer and a composite spin source layer which are sequentially stacked, the composite spin source layer comprises a topological insulator layer which is used for introducing a flip current to generate a spin current; and a non-magnetic metal layer having high orbital Hall conductivity and / or high orbital flow-spin flow conversion efficiency, the non-magnetic metal layer being disposed between the free layer and the topological insulator layer so as to cooperate with the topological insulator layer to drive the magnetic moment flipping of the free layer. The SOT efficiency of the spin source layer in the magnetic memory cell can be improved, and the flip current and flip current density of the device can be reduced.

The invention discloses a topological insulator solid solution wave-absorbing material and a preparation method thereof, and belongs to the field of electromagnetic wave absorbing materials. The invention aims to solve the problem that an existing topological insulator wave-absorbing material is difficult to deal with a complex electromagnetic environment. The chemical expression of the invention is Mn < 1-x > Sn < x > Bi < 2 > Te < 4 >. The topological insulator single crystal grows through spontaneous nucleation. According to the invention, the Sn element is introduced for doping, the energy level position of the topological surface state is adjusted, and the intrinsic high impedance matching advantage of the topological insulator is combined, so that the excellent electromagnetic wave absorption performance is obtained.

The application belongs to the technical field of electronic circuits, and particularly relates to a high-order topological insulator circuit design method based on graphdiyne structure. The method comprises the following steps: (1) establishing an LC circuit model of a two-dimensional rhombus-shaped graphdiyne structure; (2) obtaining the admittance matrix of the circuit according to the Kirchhoff equation, solving the matrix eigenvalues and eigenvectors by using MATLAB, and obtaining the admittance band structure; (3) changing the size of the capacitance proportion parameter, so that the topological phase transition of the circuit system can be realized; (4) in the topological non-trivial phase parameter region, the impedance distribution under different frequencies is calculated, and it can be observed that the system has zero energy angle state, i.e. second-order topological state; (5) the impedance distribution under a specific frequency is measured, and it is observed in the experiment that the topological angle state is localized in the obtuse angle or acute angle region of the rhombus-shaped circuit board, and the system has high-order topological properties.

A Majorana quantum bit includes: a first topological insulator layer including a first edge; a first s-wave superconductor layer; and a first layer provided between the first edge and the first s-wave superconductor layer and which allows cooper pairs to enter the first edge from the first s-wave superconductor layer.

According to the magnetic single crystal thin film, the preparation method and the application thereof, a chemical vapor deposition method is adopted, high-melting-point chromium powder is used as a gas-phase slow-release regulating agent to construct a composite precursor with low-melting-point bismuth oxychloride powder, and key growth parameters such as the raw material proportion, the reaction temperature, the deposition time and the carrier gas flow are regulated and controlled through a system, so that the magnetic single crystal thin film is obtained. Under the condition that the temperature is lower than the traditional process temperature (300-450 DEG C), the Bi2-xCrxTe3 magnetic single crystal film with high crystal quality and consistent crystal orientation height is prepared, the Cr doping concentration of the Bi2-xCrxTe3 magnetic single crystal film is 0.1-2.0 at%, and the minimum thickness of the Bi2-xCrxTe3 magnetic single crystal film can reach 1.1 nm. The low-temperature preparation process provided by the invention has good semiconductor manufacturing compatibility, and a feasible material platform is provided for research of the magnetic topological insulator and application of the magnetic topological insulator in the fields of topological quantum devices, quantum spintronics and the like.

The invention belongs to the technical field of microelectronics, and particularly relates to an artificial synaptic device based on a vertical nanowire array and a preparation method and application of the artificial synaptic device. The synaptic device comprises a substrate, a bottom electrode layer, an insulating template, a vertex electrode layer and a nanowire array. And the bottom electrode layer, the insulating template and the top electrode layer form a sandwich structure. The insulating template internally comprises a large number of vertically through nanopores, and the nanowire array is filled in the nanopores and is formed by a chalcogenide semiconductor material or a topological insulator material with rich defect states; one end of the nanowire array is electrically contacted with the bottom electrode layer, and a barrier layer is arranged between the other end of the nanowire array and the top electrode layer. Reversible switching of the device between a volatile threshold switching mode and a non-volatile resistive random access memory mode can be realized by adjusting the magnitude and the direction of a scanning voltage and a limiting current applied between the top electrode and the bottom electrode; the device overcomes the defects of a traditional device in the aspects of functional flexibility and structural reliability.

This invention discloses a temperature control system and method for a microfluidic chip, relating to the field of microfluidic temperature control technology. The method includes: during the microfluidic chip manufacturing process, embedding topological insulator nanowires into a substrate in a directional arrangement to form a pre-locked array; simultaneously generating an anisotropic thermally conductive network under continuous acoustic-magnetic field action; calculating topological vortex invariants to generate thermal conductivity weighting coefficients; setting a fluorescent layer on the surface of the micro-reaction cavity of the anisotropic thermally conductive network and acquiring fluorescence lifetime decay curves in real time; calculating transient temperature values ​​and temperature change rates based on a thermal conductivity-constrained variational model and the thermal conductivity weighting coefficients; calculating nonlinear feedforward compensation power based on the transient temperature values ​​and temperature change rates; calculating feedback compensation power based on the deviation field between the target temperature and the real-time temperature; and generating compensation power commands. This invention constructs a thermal conductivity frequency domain filtering function through compensation power commands, improving the uniformity and response speed of the thermal response.

The application relates to the technical field of artificial synapses, and specifically discloses an artificial optoelectric synapse device based on a topological insulator, which comprises an Sb2Te3 film and two Au electrodes arranged at two ends of the Sb2Te3 film; compared with a conventional three-terminal transistor synapse which needs an additional stimulation gate voltage, the optoelectric synapse device has a simple preparation process, the artificial optoelectric synapse device based on the topological insulator has a simple structure, a simple preparation process, stable performance in air, and excellent photoelectric current response in a visible light range; the photo response of the device can be modulated by adjusting parameters of light stimulation. In addition, the artificial optoelectric synapse device is combined with a recurrent neural network to process image information, which helps to improve the recognition accuracy in the recurrent neural network; a series of synapse signals capable of representing images are taken as inputs of the RNN, the image recognition accuracy of the RNN is improved by effectively utilizing the synapse time sequence data, and the accuracy can reach 100%.

A quantum detector is provided with a vertically stacked structure. The detector comprises a conductive substrate, a plurality of quantum detectors configured on the conductive substrate, and a lower electrode. Each of the quantum detectors comprises an electron transport layer (GaAs), a three-dimensional topological insulator layer (Sb-doping Bi2Te3), a light-absorbing layer (e.g. having excellent graphene quantum dot (ZnO)), and an upper electrode. The lower electrode is disposed between first and second upper electrodes of the first and second quantum detectors that are adjacent to each other to provide a vertical series of electrical coupling. Thus, the present invention provides a novel photodetector with a vertical structure. With the preparation of a topological material through high-power impulsed magnetron sputtering (having a special surface state of an extremely-low energy gap), the mobility of electron-hole-pair carriers is effectively improved. The whole device achieves low energy consumption and extended use life.

According to the light superconductive carbon fiber composite cable and the preparation method thereof provided by the invention, the problem of resistance loss caused by grain boundary scattering in a graphene cable is solved by combining a graphene grain boundary repairing technology of a metal state on the surface of a topological insulator. The preparation method comprises the following steps: directionally depositing Bi2Se3 nanosheets on a graphene crystal boundary by using argon current carrying under the condition of 450-550 DEG C through a chemical vapor deposition process to form a continuous conductive channel. According to the method, complex lattice matching is not needed, the strict requirement of double-layer graphene on the magic angle precision is avoided, and the process error-tolerant rate is high. The surface metal state of the topological insulator improves the conductivity of the graphene by 20%-30%, and meanwhile, a dissipation-free topological edge state is reserved. The technology is combined with the light superconductive carbon fiber composite cable, so that the conductivity and mechanical stability of the cable are remarkably improved, and the light superconductive carbon fiber composite cable has a wide application prospect.

The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.

A semiconductor device may include a source line, a bit line, and a gate structure located between the source line and the bit line. The gate structure may include conductive layers and insulating layers that are alternately stacked. The semiconductor device may include a topological insulator that may extend from the bit line to the source line through the gate structure. The topological insulator may include a non-conductor region and semiconductor regions coupled to the non-conductor region and located at a sidewall of the topological insulator. The semiconductor device may also include a memory layer surrounding the topological insulator.

The application is suitable for the technical field of battery catalytic materials, and provides a preparation method and application of a topological insulator composite catalytic material, which comprises the following steps: step 1, preparing a catalytic material ZIF-67, and carbonizing the prepared ZIF-67 at 400-700 DEG C for 2-5 h; step 2, preparing a catalytic material Bi2Te3; step 3, preparing a composite catalytic material Bi2Te3@ZIF-67; mechanically mixing and grinding the carbonized ZIF-67 material and the Bi2Te3 material according to a predetermined mass ratio to obtain the composite catalytic material Bi2Te3@ZIF-67. The material can optimize the adsorption energy barrier of oxygen reduction and oxygen evolution reaction intermediates, inhibit the hydrogen evolution side reaction and electrolyte corrosion, and realize high catalytic activity in an alkaline environment. The zinc-air battery assembled by Bi2Te3@ZIF-67 has high discharge voltage, improved energy density, long battery cycle life and good stability, and provides a new material and application technology for commercialization of the zinc-air battery.

The technical field of a NMBT basic system unit with topological insulator phase transition characteristics The present invention relates to the multi-disciplinary field of electronic materials, and describes a composite molecular structure composed of different physical properties of manganese-based NdBaMnO3 (NM) and titanium-based BaNdTiO3 (BT), and NMBT particles and thin film structures composed of the same, a NMBT basic system unit, which has the technical and method of topological insulator phase transition characteristics under the action of an electric field, and the occurrence of the giant magnetoresistance effect, anomalous Hall effect and abnormal dielectric effect at room temperature.

The invention provides a copper-doped bismuth telluride topological insulator lithium-sulfur battery diaphragm material and a preparation method thereof. The chemical formula of the copper-doped bismuth telluride topological insulator lithium-sulfur battery diaphragm material is Bi (2-x) CuxTe3, wherein the doping amount x of Cu is less than 10%. The topological structure of the surface of Bi2Te3 is changed through Cu doping, the carrier concentration of the surface is improved, meanwhile, when the Bi2Te3 is used as a battery diaphragm material of a lithium-sulfur battery, Cu doping can cause crystal defects, so that more sites are exposed, and Cu and sulfur species can form Cu-S bonds, so that the capturing capability of bismuth telluride on polysulfide is remarkably enhanced, and the performance of the Bi2Te3 is improved. By introducing Cu, the catalytic activity of Bi2Te3 on polysulfide conversion is improved, and the ionic conductivity is improved, so that the charge-discharge performance of the lithium-sulfur battery is improved.