109 results about "Topological insulator" patented technology

The invention discloses a bronze ware ornamentation and pattern digital restoration method based on an image enhancement technology, and relates to the technical field of image restoration, and the method comprises the steps: building a space mapping matrix; extracting multi-modal data features by using the surface state of the topological insulator, and registering a joint data volume; forming a super-resolution image through super-resolution reconstruction; obtaining a material degradation coefficient by using a wavelet finite element method and a graph neural network; generating an adversarial network by utilizing physical constraints, and generating an embarrassment repairing result; a material sensing three-dimensional model is constructed by adopting a wavelet packet decomposition and neural radiation field fusion technology, texture mapping is dynamically adjusted based on a graphene Moire effect, and virtual-real fusion is performed through holographic waveguide AR; by combining advanced technologies such as a metamaterial lens, micro-distance laser scanning, a topological insulator film, a graphene heterojunction and a nerve radiation field, high-precision three-dimensional digital restoration and repair of bronze cultural relics are realized, and immersive augmented reality display experience is provided.

The present disclosure generally relates to topological insulator (TI) based or topological semi-metal (TSM) based spin-orbit torque (SOT) devices. The SOT device comprises a buffer layer, a first migration barrier layer, a TI or TSM layer, a second migration barrier layer, an interlayer, a ferromagnetic layer, and a capping layer. The TI or TSM layer is disposed in contact with the first and second migration barrier layers. The SOT device can also comprise a buffer layer, a ferromagnetic layer, an interlayer, a first migration barrier layer, a TI or TSM layer, a second migration barrier layer, and a capping layer. The TI or TSM layer is disposed in contact with the first and second migration barrier layers.

The invention discloses a temperature control system and method of a micro-fluidic chip, and relates to the technical field of micro-fluidic temperature control, and the method comprises the following steps: in the manufacturing process of the micro-fluidic chip, embedding topological insulator nanowires into a substrate in a directional arrangement mode to form a pre-locking array, and meanwhile, generating an anisotropic heat conduction network under the continuous action of a sound-magnetic field, a topological vortex invariant is calculated, and a heat conduction weight coefficient is generated; arranging a fluorescent layer on the surface of a micro-reaction cavity of the anisotropic heat conduction network, collecting a fluorescence lifetime attenuation curve in real time, and calculating a transient temperature value and a temperature change rate according to a heat conduction constraint variation model and a heat conduction weight system; nonlinear feed-forward compensation power is calculated according to the transient temperature value and the temperature change rate, feedback compensation power is calculated in combination with a deviation field of the target temperature and the real-time temperature, and a compensation power instruction is generated; according to the method, the thermal pilot frequency domain filtering function is constructed through the compensation power instruction, so that the uniformity and response speed of thermal response are improved.

The present disclosure generally relates to topological material based spin-orbit torque (SOT) devices. The SOT device comprises a seed layer, a texture layer disposed on the seed layer, a first barrier layer disposed on the texture layer, a ferromagnetic (FM) layer disposed over the first barrier layer, a topological insulator (TI) or topological semi-metal (TSM) layer disposed over the first barrier layer, the TI or TSM layer comprising YPtBi or BiSb, and a second barrier layer disposed between the FM layer and the TI or TSM layer. In one embodiment, the texture layer, the first and second barrier layers, and the FM layer have a (100) orientation, and the TI or TSM layer comprises (012) BiSb or (100) YPtBi. In another embodiment, the texture layer, the first and second barrier layers, and the FM layer have a (110) orientation, and the TI or TSM layer comprises (110) YPtBi.

The invention provides an anisotropic ion transmission supercapacitor based on topological insulator electrolyte. Relates to the technical field of energy storage devices, and comprises an electrolyte module, the electrolyte module comprises an electrolyte, the electrolyte is a network formed by Bi2Se3 nanowires, and the Bi2Se3 nanowires form an anisotropic ion transport channel through a surface modification method of sodium dodecyl benzene sulfonate and vertical orientation arrangement. According to the anisotropic ion transmission supercapacitor based on the topological insulator electrolyte, an electrolyte module with anisotropic ion transmission characteristics is formed by adopting a network formed by topological insulator electrolyte Bi2Se3 nanowires and a surface modification technology. The electrode performance of the electrode module is enhanced through a vertical heterojunction structure, laser reduction, plasma etching and other processes, and therefore the excellent performance of the solid-state supercapacitor in the aspects of high energy density, low-temperature stability and structural stability is achieved.

A quantum frequency converter includes a laminate including at least one topological insulator film and at least one ferromagnetic film that are laminated together. The laminate includes an interface between the topological insulator film and the ferromagnetic film and configured to be irradiated with laser light. The quantum frequency converter includes a magnetic field applying unit configured to apply a magnetic field with a component perpendicular to the interface to the laminate, and a microwave transceiver configured to transmit and receive a microwave to and from the laminate.

The present invention provides a quantum device and a method for manufacturing the same that enable the injection of Cooper pairs into the edges of a two-dimensional topological insulator without the use of heterointerfaces, and the control of the Fermi level at the edges of the two-dimensional topological insulator. [Solution] The quantum device comprises a monolayer 4 of tungsten ditelluride having a 1T' type crystal structure, a first electrode 6a that provides a first potential to a first portion of the monolayer that is a part of the monolayer and separated from the outer periphery of the monolayer, and a second electrode 6b that provides a second potential to a second portion of the monolayer that is a part of the monolayer and includes a certain range of the outer periphery of the monolayer. The first electrode is positioned so that Cooper pairs generated by the application of the first potential to the first portion can penetrate a third portion that is a part of the second portion and includes the certain range. The third portion is a region in which topological superconductivity occurs when Cooper pairs penetrate.

A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having a (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or a combination thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or a combination thereof, where M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes an interconnect structure which includes a topological material. The topological material includes a topological insulator, a topological semimetal, or a combination thereof. A method for manufacturing the semiconductor device is also disclosed.

The present invention relates to a spin current generation device using an SiOC topological insulator, and a manufacturing method therefor. The spin current generation device using an SiOC topological insulator, according to the present invention, comprises: a substrate (200); a gate electrode (303) disposed on the substrate (200); a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); a source electrode (301) disposed on the gate insulating film (100); and a drain electrode (302) disposed on the gate insulating film (100), wherein the gate insulating film (100) is composed of an SiC topological insulator and has a dielectric constant of 0.01 to 2.5.

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

To provide a quantum converter and a quantum conversion method capable of improving conversion efficiency even when light with low loss in an optical fiber is used.SOLUTION: The quantum transducer includes a three dimensional cavity resonator, and a nonmagnetic first insulator film and a ferromagnetic or antiferromagnetic second insulator film that are provided in the three dimensional cavity resonator and are stacked on each other, A laminate including an interface between the first insulator film and the second insulator film, a magnetic field application unit configured to apply a magnetic field including a component perpendicular to the interface to the laminate, and a microwave transmission and reception unit configured to transmit and receive microwaves to and from the laminate, wherein the first insulator film and the second insulator film do not include a topological insulator, the second insulator film has an easy magnetization axis along a first axis perpendicular to the interface, and the laminate is irradiated with laser light from a direction inclined with respect to the first axis. Quantum converters can be used, for example, in quantum computing.SELECTED DRAWING: Figure 1

The present application relates to a kind of novel spin terahertz emitter and its regulation method, and spin terahertz emission structure includes: electrode, and by sequentially arranged substrate layer, first topological material layer, first ferromagnetic material layer, barrier layer, second topological material layer and second ferromagnetic material layer from bottom to top, first, second topological material layer includes topological insulator and topological semimetal, electrode is used to input current to the first topological material layer.New regulation method of novel spin terahertz emitter includes: by electrode, input current to the first topological material layer, by changing the polarity and size of current, change the magnetic moment direction of first ferromagnetic material layer, and then switch superfast regulation to spin terahertz, enrich the type of prior art in spin terahertz emitter and the regulation means of spin terahertz switch.

The present invention relates to the field of semiconductor detection technology, and discloses a digital detection system and method for a wafer ultrasonic field. The digital detection method for a wafer ultrasonic field comprises: configuring an acoustic topological insulator coupling system to construct a scattering-free acoustic wave transmission channel; constructing a heterogeneous metasurface acoustic field control system to obtain depth dimension information; applying an acoustic holographic compensation algorithm to eliminate imaging distortion in a curved area and output a compensated acoustic field distribution; executing a phase recovery and annular reconstruction algorithm to achieve high-quality three-dimensional imaging of an edge area; implementing an adaptive coupling adjustment system to automatically adjust coupling material properties according to the quality of a real-time monitored edge reflection signal. The present invention constructs a scattering-free acoustic wave transmission channel through the acoustic topological insulator coupling system, effectively solving the problem of severe acoustic wave scattering in the edge area, thereby improving the detection sensitivity of the wafer edge area, reducing the defect missed detection rate compared with traditional methods, and improving the integrity of wafer detection.

A system comprising a quantum information engine (QIE). The QIE includes a topological surface state three-dimensional topological insulator (TSS-3DTI) to flow, in a first flow direction from an input side to an output side, electrons having a first spin-momentum. The TSS-3DTI includes a first surface. The first surface has first spin-momentum locked charge carriers and a plurality of first magnetic impurities having a second average nuclear spin polarization. The TSS-3DTI stores information in the first surface at the points of interaction that occur between the plurality of first magnetic impurities interacting with the flowing electrons to exchange, at each point of interaction, a nuclear spin of a respective first magnetic impurity with an electron spin of a respective flowing electron. The system can include at least one surface. The system can harvest energy from other integrated circuits. A method of storing quantum energy is also provided.

The three-dimensional photon antiferromagnetic topological insulator is constructed based on a net zero magnetization three-dimensional gyromagnetic photonic crystal, and primitive cells of the three-dimensional photon antiferromagnetic topological insulator in a Z-axis periodic array are composed of a metal coupling plate, an A-layer photonic crystal, a metal coupling plate and a B-layer photonic crystal which are arranged in a laminated mode; the projections of the gyromagnetic medium columns in the photonic crystals of the A layer and the B layer on an X-Y plane meet a Bercal stacking relationship; the metal coupling plate is provided with a coupling hole and a mounting hole for embedding the permanent magnet; the gyromagnetic dielectric cylinders are clamped between the permanent magnets at the corresponding positions in the adjacent metal coupling plates; the magnetic bias directions provided by the permanent magnets for the adjacent gyromagnetic medium columns clamped by the permanent magnets are opposite. The antiferromagnetic topological insulator constructed by the invention has a complete bulk band gap and adjustable crystal face Dirac mass, and can cooperatively excite a one-dimensional chiral prism state and a two-dimensional chiral surface state. Furthermore, the topological slow light waveguide device with nonreciprocity, robustness and broadband slow light transmission characteristics is designed and realized by utilizing the insulator.

This invention provides a topological quantum device and a method for manufacturing the same, in which an oxide film that suppresses the penetration of Cooper pairs from an S-wave superconductor into a two-dimensional topological insulator is substantially absent. [Solution] The quantum device 2 comprises a two-dimensional topological insulator 6, which is a single layer of tungsten ditelluride having a 1T'-type crystal structure and is disposed on or above the support 4, and a coating 8 covering the two-dimensional topological insulator, which includes an S-wave superconductor 10 having W atoms, Te atoms, and metal atoms. The S-wave superconductor is positioned so that Cooper pairs can penetrate from the S-wave superconductor into the edges of the two-dimensional topological insulator.

The disclosure provides a topological spin material-based magnetic resistance storage device, comprising: a spin-orbit coupling layer, a material being a topological insulator, for generating a spin current; a nickel oxide layer formed on the spin-orbit coupling layer; an interface layer formed on the nickel oxide layer; and a magnetic tunnel junction formed on the interface layer, comprising ferromagnetic layers formed on both sides of a barrier layer; the spin current acts on the ferromagnetic layers in the form of magnons after being transmitted in the nickel oxide layer, and the interface layer is used for enhancing anisotropy of the ferromagnetic layers.

The application provides a temperature-adjustable acoustic topological insulator. By adjusting the environmental temperature, the four-fold Dirac point degeneracy at the Gamma point can be opened, resulting in the band inversion between the two-fold degenerate dipole state and quadrupole state, and a topological phase transition is realized. The evolution law of the topological state with temperature is numerically studied, and a new type of topological acoustic switch is constructed. By controlling the topological phase through temperature, the non-contact active regulation of the interface state in the structure can be realized, and the switching effect is exhibited. The research of the application can provide a corresponding reference for the intelligent control of sound and vibration of acoustic topology.

The invention discloses a topological insulator Bi2Te3 nanopore size regulation and control method based on thickness-diameter ratio feedback, and belongs to the field of two-dimensional material nanometer manufacturing. Comprising the following steps: step 1, placing a sample in a transmission electron microscope, and prefabricating nanopores with the diameter of 1-5nm in a bismuth telluride film with the thickness of 2-10nm by utilizing a converged electron beam; step 2, performing irradiation by using an electron beam with 300kV acceleration voltage, wherein the beam density is controlled to be 1.54 * 10 < 5 > A.m <-2 >; 3, feeding back the regulation and control size based on the ratio of the initial aperture of the nanopore to the thickness of the material, and when the thickness-diameter ratio is smaller than 0.5, realizing aperture shrinkage or expansion by adjusting the beam density; and when the thickness-diameter ratio is greater than 0.5, the electron beam irradiation only enables the aperture to be enlarged, and the aperture cannot be shrunk. The method does not need chemical reagents, is green and environment-friendly, can directionally regulate and control the size of the bismuth telluride nanopore, and is suitable for preparing topological quantum devices, nanofiltration membranes and thermoelectric nanostructures.

A layer including a topological insulator, the layer including: an arrangement of a plurality of patterns on a surface of the layer, each pattern of the plurality of patterns including at least a non-straight elongated portion. An electronic device including the layer including a topological insulator, and further including first and second electrodes on the layer. Further, the first and second electrodes may be configured to provide electrical connection to the layer. A method of controlling spin transport in the layer includes a topological insulator, the method including: applying circularly polarized light on the layer; and driving an electronic component with a photocurrent produced in the layer by the circularly polarized light.

The invention provides a magnetic memory unit, a manufacturing method thereof and a magnetic memory. The magnetic memory unit comprises a pinning layer, a reference layer, a barrier layer, a free layer and a composite spin source layer which are sequentially stacked, the composite spin source layer comprises a topological insulator layer which is used for introducing a flip current to generate a spin current; and a non-magnetic metal layer having high orbital Hall conductivity and / or high orbital flow-spin flow conversion efficiency, the non-magnetic metal layer being disposed between the free layer and the topological insulator layer so as to cooperate with the topological insulator layer to drive the magnetic moment flipping of the free layer. The SOT efficiency of the spin source layer in the magnetic memory cell can be improved, and the flip current and flip current density of the device can be reduced.

The invention discloses a topological insulator solid solution wave-absorbing material and a preparation method thereof, and belongs to the field of electromagnetic wave absorbing materials. The invention aims to solve the problem that an existing topological insulator wave-absorbing material is difficult to deal with a complex electromagnetic environment. The chemical expression of the invention is Mn < 1-x > Sn < x > Bi < 2 > Te < 4 >. The topological insulator single crystal grows through spontaneous nucleation. According to the invention, the Sn element is introduced for doping, the energy level position of the topological surface state is adjusted, and the intrinsic high impedance matching advantage of the topological insulator is combined, so that the excellent electromagnetic wave absorption performance is obtained.

The invention discloses a device stress isolation system and method, and relates to the technical field of stress isolation, and the method comprises the steps: preparing a magnetic topological insulator film on the surface of a device, forming a heterojunction structure through deposition and annealing treatment, verifying the conversion efficiency of converting mechanical stress into spin waves, and outputting the energy flux density distribution of the spin waves; a magnetic topological insulator film and a space-time coding metamaterial layer are integrated, a sensor array is deployed to monitor a magnetic field and temperature in real time, a spin wave path and coding parameters are controlled and adjusted through cooperation of multiple physical fields, and dynamic traveling wave stiffness field distribution is output; and dynamically matching the propagation characteristics of the spin wave and the traveling wave stiffness field through iterative updating of an optimization algorithm, outputting optimized dynamic traveling wave stiffness field calibration parameters, carrying out full-condition vibration testing, and verifying the isolation performance. According to the invention, through a multi-physical field cooperative control and dynamic optimization mechanism, full-link performance improvement of device stress isolation is satisfied.

The present application provides a method, apparatus, device, storage medium, and program product for determining circuit parameters, relating to the field of circuit design, for causing the current in a topological insulator circuit to exhibit a specific distribution or enhancement. The method comprises: obtaining a pre-constructed circuit model of a topological insulator circuit, wherein the topological insulator circuit comprises a plurality of first closed loops and a second closed loop; determining the in-situ energy of the first closed loop and the in-situ energy of the second closed loop based on the circuit model, the coupling strength of the first closed loop, and the coupling strength of the second closed loop; and determining the circuit parameters of the topological insulator circuit based on the in-situ energy of the first closed loop and the in-situ energy of the second closed loop.

The application belongs to the technical field of electronic circuits, and particularly relates to a high-order topological insulator circuit design method based on graphdiyne structure. The method comprises the following steps: (1) establishing an LC circuit model of a two-dimensional rhombus-shaped graphdiyne structure; (2) obtaining the admittance matrix of the circuit according to the Kirchhoff equation, solving the matrix eigenvalues and eigenvectors by using MATLAB, and obtaining the admittance band structure; (3) changing the size of the capacitance proportion parameter, so that the topological phase transition of the circuit system can be realized; (4) in the topological non-trivial phase parameter region, the impedance distribution under different frequencies is calculated, and it can be observed that the system has zero energy angle state, i.e. second-order topological state; (5) the impedance distribution under a specific frequency is measured, and it is observed in the experiment that the topological angle state is localized in the obtuse angle or acute angle region of the rhombus-shaped circuit board, and the system has high-order topological properties.

A Majorana quantum bit includes: a first topological insulator layer including a first edge; a first s-wave superconductor layer; and a first layer provided between the first edge and the first s-wave superconductor layer and which allows cooper pairs to enter the first edge from the first s-wave superconductor layer.

The present invention relates to a method for controlling a catalyst having at least one metal surface state, comprising: a) identifying all topological insulators in an ICSD, b) calculating the real-space invariants of the valence bands of all these topological insulators, and c) identifying the Wyckoff positions where the irreducible Wannier charge centers are concentrated in all these topological insulators, and then d) selecting a topological insulator as a potential catalytically active compound: wherein the WCC position is not occupied by any atom; e) synthesizing a crystal of the selected potential catalytically active compound so that it grows in a predetermined crystallographic direction (characterized by its Miller indices (h, k, l)) that exposes the metal surface state; or cutting the crystal in a predetermined crystallographic direction (characterized by its Miller indices (h, k, l)) to expose the metal surface state, wherein the predetermined crystallographic direction is the direction of the normal vector (h, k, l) of the surface plane f(x, y, z) = 0, the plane passing through the position blocking the WCC but leaving the atomic position, and its condition is satisfied when (l), wherein the blocking WCC is concentrated in #imgabs0# and the atom occupies WP occ ={x i ,y i ,z i |i∈occupies the position}. #imgabs1#

According to the magnetic single crystal thin film, the preparation method and the application thereof, a chemical vapor deposition method is adopted, high-melting-point chromium powder is used as a gas-phase slow-release regulating agent to construct a composite precursor with low-melting-point bismuth oxychloride powder, and key growth parameters such as the raw material proportion, the reaction temperature, the deposition time and the carrier gas flow are regulated and controlled through a system, so that the magnetic single crystal thin film is obtained. Under the condition that the temperature is lower than the traditional process temperature (300-450 DEG C), the Bi2-xCrxTe3 magnetic single crystal film with high crystal quality and consistent crystal orientation height is prepared, the Cr doping concentration of the Bi2-xCrxTe3 magnetic single crystal film is 0.1-2.0 at%, and the minimum thickness of the Bi2-xCrxTe3 magnetic single crystal film can reach 1.1 nm. The low-temperature preparation process provided by the invention has good semiconductor manufacturing compatibility, and a feasible material platform is provided for research of the magnetic topological insulator and application of the magnetic topological insulator in the fields of topological quantum devices, quantum spintronics and the like.