143 results about "Topological insulator" patented technology

The invention discloses a bronze ware ornamentation and pattern digital restoration method based on an image enhancement technology, and relates to the technical field of image restoration, and the method comprises the steps: building a space mapping matrix; extracting multi-modal data features by using the surface state of the topological insulator, and registering a joint data volume; forming a super-resolution image through super-resolution reconstruction; obtaining a material degradation coefficient by using a wavelet finite element method and a graph neural network; generating an adversarial network by utilizing physical constraints, and generating an embarrassment repairing result; a material sensing three-dimensional model is constructed by adopting a wavelet packet decomposition and neural radiation field fusion technology, texture mapping is dynamically adjusted based on a graphene Moire effect, and virtual-real fusion is performed through holographic waveguide AR; by combining advanced technologies such as a metamaterial lens, micro-distance laser scanning, a topological insulator film, a graphene heterojunction and a nerve radiation field, high-precision three-dimensional digital restoration and repair of bronze cultural relics are realized, and immersive augmented reality display experience is provided.

The invention relates to the technical field of semiconductor detection, and discloses a digital detection system and method for a wafer ultrasonic field, and the method comprises the steps: configuring an acoustic topological insulator coupling system, and constructing a non-scattering sound wave transmission channel; a heterogeneous metasurface sound field regulation and control system is constructed, and depth dimension information is obtained; applying an acoustic holographic compensation algorithm to eliminate imaging distortion of the bending area, and outputting compensated sound field distribution; executing a phase recovery and annular reconstruction algorithm to realize high-quality three-dimensional imaging of the marginal region; a self-adaptive coupling adjustment system is realized, and the characteristics of a coupling material are automatically adjusted according to the edge reflection signal quality monitored in real time; the non-scattering sound wave transmission channel is constructed through the acoustic topological insulator coupling system, the problem of serious sound wave scattering in the edge area is effectively solved, the detection sensitivity of the wafer edge area is improved, the defect omission ratio is reduced compared with a traditional method, and the wafer detection integrity is improved.

The present disclosure generally relates to topological insulator (TI) based or topological semi-metal (TSM) based spin-orbit torque (SOT) devices. The SOT device comprises a buffer layer, a first migration barrier layer, a TI or TSM layer, a second migration barrier layer, an interlayer, a ferromagnetic layer, and a capping layer. The TI or TSM layer is disposed in contact with the first and second migration barrier layers. The SOT device can also comprise a buffer layer, a ferromagnetic layer, an interlayer, a first migration barrier layer, a TI or TSM layer, a second migration barrier layer, and a capping layer. The TI or TSM layer is disposed in contact with the first and second migration barrier layers.

The invention discloses a temperature control system and method of a micro-fluidic chip, and relates to the technical field of micro-fluidic temperature control, and the method comprises the following steps: in the manufacturing process of the micro-fluidic chip, embedding topological insulator nanowires into a substrate in a directional arrangement mode to form a pre-locking array, and meanwhile, generating an anisotropic heat conduction network under the continuous action of a sound-magnetic field, a topological vortex invariant is calculated, and a heat conduction weight coefficient is generated; arranging a fluorescent layer on the surface of a micro-reaction cavity of the anisotropic heat conduction network, collecting a fluorescence lifetime attenuation curve in real time, and calculating a transient temperature value and a temperature change rate according to a heat conduction constraint variation model and a heat conduction weight system; nonlinear feed-forward compensation power is calculated according to the transient temperature value and the temperature change rate, feedback compensation power is calculated in combination with a deviation field of the target temperature and the real-time temperature, and a compensation power instruction is generated; according to the method, the thermal pilot frequency domain filtering function is constructed through the compensation power instruction, so that the uniformity and response speed of thermal response are improved.

The present disclosure generally relates to topological material based spin-orbit torque (SOT) devices. The SOT device comprises a seed layer, a texture layer disposed on the seed layer, a first barrier layer disposed on the texture layer, a ferromagnetic (FM) layer disposed over the first barrier layer, a topological insulator (TI) or topological semi-metal (TSM) layer disposed over the first barrier layer, the TI or TSM layer comprising YPtBi or BiSb, and a second barrier layer disposed between the FM layer and the TI or TSM layer. In one embodiment, the texture layer, the first and second barrier layers, and the FM layer have a (100) orientation, and the TI or TSM layer comprises (012) BiSb or (100) YPtBi. In another embodiment, the texture layer, the first and second barrier layers, and the FM layer have a (110) orientation, and the TI or TSM layer comprises (110) YPtBi.

The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.

The invention provides an anisotropic ion transmission supercapacitor based on topological insulator electrolyte. Relates to the technical field of energy storage devices, and comprises an electrolyte module, the electrolyte module comprises an electrolyte, the electrolyte is a network formed by Bi2Se3 nanowires, and the Bi2Se3 nanowires form an anisotropic ion transport channel through a surface modification method of sodium dodecyl benzene sulfonate and vertical orientation arrangement. According to the anisotropic ion transmission supercapacitor based on the topological insulator electrolyte, an electrolyte module with anisotropic ion transmission characteristics is formed by adopting a network formed by topological insulator electrolyte Bi2Se3 nanowires and a surface modification technology. The electrode performance of the electrode module is enhanced through a vertical heterojunction structure, laser reduction, plasma etching and other processes, and therefore the excellent performance of the solid-state supercapacitor in the aspects of high energy density, low-temperature stability and structural stability is achieved.

A device with adjustable exchange bias based on a low-dimensional antiferromagnetic / ferromagnetic insulator heterojunction. A device with adjustable exchange bias based on a low-dimensional antiferromagnetic / ferromagnetic insulator heterojunction. (1) A heterojunction is formed by covering an antiferromagnetic topological insulator with a low-dimensional ferromagnetic insulator; there are two configurations of the heterojunction, namely, the ferromagnetic insulator completely covering the antiferromagnetic topological insulator and the ferromagnetic insulator semi-covering the antiferromagnetic topological insulator; (2) A non-magnetic insulating protective layer is covered above the heterojunction; (3) In the heterojunction, an obvious exchange bias effect can be observed; (4) By changing the coverage range of the ferromagnetic insulator, the sign of the exchange bias can be regulated; (5) The material system used for the device is van der Waals layered materials; by changing the coverage range of the ferromagnetic insulator, the sign of the exchange bias can be regulated; below the Curie temperature and Néel temperature of the magnetic material, the anomalous Hall effect can be measured by using low temperature and magnetic field for magnetotransport measurement.

A quantum frequency converter includes a laminate including at least one topological insulator film and at least one ferromagnetic film that are laminated together. The laminate includes an interface between the topological insulator film and the ferromagnetic film and configured to be irradiated with laser light. The quantum frequency converter includes a magnetic field applying unit configured to apply a magnetic field with a component perpendicular to the interface to the laminate, and a microwave transceiver configured to transmit and receive a microwave to and from the laminate.

The present invention provides a quantum device and a method for manufacturing the same that enable the injection of Cooper pairs into the edges of a two-dimensional topological insulator without the use of heterointerfaces, and the control of the Fermi level at the edges of the two-dimensional topological insulator. [Solution] The quantum device comprises a monolayer 4 of tungsten ditelluride having a 1T' type crystal structure, a first electrode 6a that provides a first potential to a first portion of the monolayer that is a part of the monolayer and separated from the outer periphery of the monolayer, and a second electrode 6b that provides a second potential to a second portion of the monolayer that is a part of the monolayer and includes a certain range of the outer periphery of the monolayer. The first electrode is positioned so that Cooper pairs generated by the application of the first potential to the first portion can penetrate a third portion that is a part of the second portion and includes the certain range. The third portion is a region in which topological superconductivity occurs when Cooper pairs penetrate.

A spin orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having a (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or a combination thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or a combination thereof, where M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.

A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes an interconnect structure which includes a topological material. The topological material includes a topological insulator, a topological semimetal, or a combination thereof. A method for manufacturing the semiconductor device is also disclosed.

The present invention relates to a spin current generation device using an SiOC topological insulator, and a manufacturing method therefor. The spin current generation device using an SiOC topological insulator, according to the present invention, comprises: a substrate (200); a gate electrode (303) disposed on the substrate (200); a gate insulating film (100) disposed on the substrate (200) and the gate electrode (303); a source electrode (301) disposed on the gate insulating film (100); and a drain electrode (302) disposed on the gate insulating film (100), wherein the gate insulating film (100) is composed of an SiC topological insulator and has a dielectric constant of 0.01 to 2.5.

The present disclosure generally relates to topological semi-metal (TSM) and topological insulator (Tl) based spin-orbit torque (SOT) devices and a method of forming thereof. Tl or TSM-based SOT device (such as that with BiSb in the SOT layer) has been proposed for applications in magnetic switching and sensor applications, where current flows in a CIP (current-in-plane) or CPP (current-perpendicular-to-the-plane) direction, respectively. For CPP SOT devices, the requirement for the Tl or TSM layer's bulk property is to be more insulating, to minimize shunting. However, for CIP SOT devices, the requirement for the Tl or TSM layer's bulk property is to be more conductive, for less power consumption. Disclosed herein are various embodiments covering types and amounts of dopants for the Tl or TSM layer, to decrease the bandgap of the Tl or TSM layer for CIP SOT devices, thereby increasing the bulk conductivity for lower power consumption.

The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S1), a free layer (FL) disposed over the BiSb layer, and a second shield (S2) disposed over the FL. The S1, the FL, and the S2 are disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and / or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the S2 to the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the S2 to the S1.

Provided is a magnetoresistive storage device based on a topological spin material. The magnetoresistive storage device comprises: a spin-orbit coupling layer, which is made of a topological insulator and used for generating a spin current; a nickel oxide layer, which is formed on the spin-orbit coupling layer; an interface layer, which is formed on the nickel oxide layer; and a magnetic tunnel junction, which is formed on the interface layer and comprises ferromagnetic layers that are formed on the upper and lower sides of a barrier layer. The spin current is transmitted in the nickel oxide layer in the form of magnons and then acts on the ferromagnetic layers, and the interface layer is used for enhancing the anisotropy of the ferromagnetic layers.

To provide a quantum converter and a quantum conversion method capable of improving conversion efficiency even when light with low loss in an optical fiber is used.SOLUTION: The quantum transducer includes a three dimensional cavity resonator, and a nonmagnetic first insulator film and a ferromagnetic or antiferromagnetic second insulator film that are provided in the three dimensional cavity resonator and are stacked on each other, A laminate including an interface between the first insulator film and the second insulator film, a magnetic field application unit configured to apply a magnetic field including a component perpendicular to the interface to the laminate, and a microwave transmission and reception unit configured to transmit and receive microwaves to and from the laminate, wherein the first insulator film and the second insulator film do not include a topological insulator, the second insulator film has an easy magnetization axis along a first axis perpendicular to the interface, and the laminate is irradiated with laser light from a direction inclined with respect to the first axis. Quantum converters can be used, for example, in quantum computing.SELECTED DRAWING: Figure 1

The present application relates to a kind of novel spin terahertz emitter and its regulation method, and spin terahertz emission structure includes: electrode, and by sequentially arranged substrate layer, first topological material layer, first ferromagnetic material layer, barrier layer, second topological material layer and second ferromagnetic material layer from bottom to top, first, second topological material layer includes topological insulator and topological semimetal, electrode is used to input current to the first topological material layer.New regulation method of novel spin terahertz emitter includes: by electrode, input current to the first topological material layer, by changing the polarity and size of current, change the magnetic moment direction of first ferromagnetic material layer, and then switch superfast regulation to spin terahertz, enrich the type of prior art in spin terahertz emitter and the regulation means of spin terahertz switch.

The present invention relates to the field of semiconductor detection technology, and discloses a digital detection system and method for a wafer ultrasonic field. The digital detection method for a wafer ultrasonic field comprises: configuring an acoustic topological insulator coupling system to construct a scattering-free acoustic wave transmission channel; constructing a heterogeneous metasurface acoustic field control system to obtain depth dimension information; applying an acoustic holographic compensation algorithm to eliminate imaging distortion in a curved area and output a compensated acoustic field distribution; executing a phase recovery and annular reconstruction algorithm to achieve high-quality three-dimensional imaging of an edge area; implementing an adaptive coupling adjustment system to automatically adjust coupling material properties according to the quality of a real-time monitored edge reflection signal. The present invention constructs a scattering-free acoustic wave transmission channel through the acoustic topological insulator coupling system, effectively solving the problem of severe acoustic wave scattering in the edge area, thereby improving the detection sensitivity of the wafer edge area, reducing the defect missed detection rate compared with traditional methods, and improving the integrity of wafer detection.

A system comprising a quantum information engine (QIE). The QIE includes a topological surface state three-dimensional topological insulator (TSS-3DTI) to flow, in a first flow direction from an input side to an output side, electrons having a first spin-momentum. The TSS-3DTI includes a first surface. The first surface has first spin-momentum locked charge carriers and a plurality of first magnetic impurities having a second average nuclear spin polarization. The TSS-3DTI stores information in the first surface at the points of interaction that occur between the plurality of first magnetic impurities interacting with the flowing electrons to exchange, at each point of interaction, a nuclear spin of a respective first magnetic impurity with an electron spin of a respective flowing electron. The system can include at least one surface. The system can harvest energy from other integrated circuits. A method of storing quantum energy is also provided.

The three-dimensional photon antiferromagnetic topological insulator is constructed based on a net zero magnetization three-dimensional gyromagnetic photonic crystal, and primitive cells of the three-dimensional photon antiferromagnetic topological insulator in a Z-axis periodic array are composed of a metal coupling plate, an A-layer photonic crystal, a metal coupling plate and a B-layer photonic crystal which are arranged in a laminated mode; the projections of the gyromagnetic medium columns in the photonic crystals of the A layer and the B layer on an X-Y plane meet a Bercal stacking relationship; the metal coupling plate is provided with a coupling hole and a mounting hole for embedding the permanent magnet; the gyromagnetic dielectric cylinders are clamped between the permanent magnets at the corresponding positions in the adjacent metal coupling plates; the magnetic bias directions provided by the permanent magnets for the adjacent gyromagnetic medium columns clamped by the permanent magnets are opposite. The antiferromagnetic topological insulator constructed by the invention has a complete bulk band gap and adjustable crystal face Dirac mass, and can cooperatively excite a one-dimensional chiral prism state and a two-dimensional chiral surface state. Furthermore, the topological slow light waveguide device with nonreciprocity, robustness and broadband slow light transmission characteristics is designed and realized by utilizing the insulator.

This invention provides a topological quantum device and a method for manufacturing the same, in which an oxide film that suppresses the penetration of Cooper pairs from an S-wave superconductor into a two-dimensional topological insulator is substantially absent. [Solution] The quantum device 2 comprises a two-dimensional topological insulator 6, which is a single layer of tungsten ditelluride having a 1T'-type crystal structure and is disposed on or above the support 4, and a coating 8 covering the two-dimensional topological insulator, which includes an S-wave superconductor 10 having W atoms, Te atoms, and metal atoms. The S-wave superconductor is positioned so that Cooper pairs can penetrate from the S-wave superconductor into the edges of the two-dimensional topological insulator.

The disclosure provides a topological spin material-based magnetic resistance storage device, comprising: a spin-orbit coupling layer, a material being a topological insulator, for generating a spin current; a nickel oxide layer formed on the spin-orbit coupling layer; an interface layer formed on the nickel oxide layer; and a magnetic tunnel junction formed on the interface layer, comprising ferromagnetic layers formed on both sides of a barrier layer; the spin current acts on the ferromagnetic layers in the form of magnons after being transmitted in the nickel oxide layer, and the interface layer is used for enhancing anisotropy of the ferromagnetic layers.

The application provides a temperature-adjustable acoustic topological insulator. By adjusting the environmental temperature, the four-fold Dirac point degeneracy at the Gamma point can be opened, resulting in the band inversion between the two-fold degenerate dipole state and quadrupole state, and a topological phase transition is realized. The evolution law of the topological state with temperature is numerically studied, and a new type of topological acoustic switch is constructed. By controlling the topological phase through temperature, the non-contact active regulation of the interface state in the structure can be realized, and the switching effect is exhibited. The research of the application can provide a corresponding reference for the intelligent control of sound and vibration of acoustic topology.

The embodiment of the invention discloses a flexible antenna and a preparation method thereof. The flexible antenna comprises a flexible metal material layer; the flexible dielectric material layer is formed on the flexible metal material layer; the antenna structure is formed on the flexible dielectric material layer, and the material of the antenna structure is a topological insulator material. The material of the antenna structure is the topological insulator material, on one hand, due to the special energy band characteristic of the topological insulator material, electromagnetic signals propagated on the topological insulator material almost have no propagation loss; on the other hand, due to the constraint characteristic of the topological insulator material on the electromagnetic signal, the electromagnetic signal is almost not intersected with the flexible medium, so that the medium loss of the traditional flexible antenna is almost avoided; therefore, the flexible antenna based on the topological insulator material can avoid metal loss and dielectric loss existing in a traditional flexible antenna, the loss of backscatter communication nodes is further reduced, and finally the operating distance of backscatter communication is increased.

The invention discloses a topological insulator Bi2Te3 nanopore size regulation and control method based on thickness-diameter ratio feedback, and belongs to the field of two-dimensional material nanometer manufacturing. Comprising the following steps: step 1, placing a sample in a transmission electron microscope, and prefabricating nanopores with the diameter of 1-5nm in a bismuth telluride film with the thickness of 2-10nm by utilizing a converged electron beam; step 2, performing irradiation by using an electron beam with 300kV acceleration voltage, wherein the beam density is controlled to be 1.54 * 10 < 5 > A.m <-2 >; 3, feeding back the regulation and control size based on the ratio of the initial aperture of the nanopore to the thickness of the material, and when the thickness-diameter ratio is smaller than 0.5, realizing aperture shrinkage or expansion by adjusting the beam density; and when the thickness-diameter ratio is greater than 0.5, the electron beam irradiation only enables the aperture to be enlarged, and the aperture cannot be shrunk. The method does not need chemical reagents, is green and environment-friendly, can directionally regulate and control the size of the bismuth telluride nanopore, and is suitable for preparing topological quantum devices, nanofiltration membranes and thermoelectric nanostructures.

A layer including a topological insulator, the layer including: an arrangement of a plurality of patterns on a surface of the layer, each pattern of the plurality of patterns including at least a non-straight elongated portion. An electronic device including the layer including a topological insulator, and further including first and second electrodes on the layer. Further, the first and second electrodes may be configured to provide electrical connection to the layer. A method of controlling spin transport in the layer includes a topological insulator, the method including: applying circularly polarized light on the layer; and driving an electronic component with a photocurrent produced in the layer by the circularly polarized light.

The invention provides a magnetic memory unit, a manufacturing method thereof and a magnetic memory. The magnetic memory unit comprises a pinning layer, a reference layer, a barrier layer, a free layer and a composite spin source layer which are sequentially stacked, the composite spin source layer comprises a topological insulator layer which is used for introducing a flip current to generate a spin current; and a non-magnetic metal layer having high orbital Hall conductivity and / or high orbital flow-spin flow conversion efficiency, the non-magnetic metal layer being disposed between the free layer and the topological insulator layer so as to cooperate with the topological insulator layer to drive the magnetic moment flipping of the free layer. The SOT efficiency of the spin source layer in the magnetic memory cell can be improved, and the flip current and flip current density of the device can be reduced.

The present invention discloses a room-temperature topological insulator heterojunction photodetector with a special dipole antenna. The device preparation steps are as follows: transfer the germanium-bismuth-tellurium grown by chemical vapor deposition onto a high-resistance silicon substrate with a silicon dioxide oxide layer, then use dry transfer to form a heterojunction between bismuth telluride material and germanium tellurium bismuth, and then use ultraviolet lithography technology to fabricate source and drain electrodes, and use processes such as ultraviolet lithography, electron beam evaporation, and lift-off to prepare a topological insulator heterojunction photodetector with a special antenna structure. By using the unique antenna structure, the terahertz field is concentrated on the incident device, realizing the enhancement of the collective plasmon oscillation efficiency and absorption under the control of the sub-wavelength scale photon structure, and greatly improving the sensitivity of the photodetector. The photodetector described above exhibits ultra-high responsivity and a relatively wide response spectrum in the terahertz band. The advantages of the present invention are high detectivity, fast response, wide-spectrum response, low power consumption, and ease of integration.