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Thermoelectric Structures And Devices Based On Topological Insulators

A topological insulator, thermoelectric technology, applied in the direction of thermoelectric devices that only use the Peltier or Seebeck effect, and can solve the problem of insufficient zT value improvement.

Inactive Publication Date: 2015-06-03
ENN SCI & TECH DEV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, modifying any one parameter may have some canceling effects, so that the zT value does not improve significantly

Method used

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  • Thermoelectric Structures And Devices Based On Topological Insulators
  • Thermoelectric Structures And Devices Based On Topological Insulators
  • Thermoelectric Structures And Devices Based On Topological Insulators

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Embodiment Construction

[0028] A detailed description of the body of creative work is provided below. And the embodiment in each accompanying drawing is described in detail.

[0029] Compared with traditional energy conversion systems, the application of thermoelectric materials has a promising competitive advantage in power generation and solid-state cooling. In the application of thermoelectric materials, the key to success is to further increase its zT value. Even small increases in zT values ​​can lead to many new applications. The recent discovery of topological insulators has brought new light to the search for efficient thermoelectric materials.

[0030] figure 1 Shows a thermocouple using a topological insulator, applying the Seebeck effect to generate electricity. A Seebeck effect thermoelectric generator applies the flow of heat generated by a temperature gradient to generate electricity. There is a temperature difference ΔT between the hot plate 101 and the cold plate 102 . The N-typ...

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Abstract

Method and apparatus are provided for improving the thermoelectric figure of merit (zT) for thermoelectric structures and devices based on topological insulators. In one novel aspect, the zT of the TI is increased by optimizing geometric sizes of the TI. In one embodiment, the zT is increased by increasing the length of the TI to be greater than the inelastic mean free path length. In another embodiment, the zT is increased by decrease the width of a 2D TI to be about three times the localized localization width ξ of the boundary state of the TI, or to decrease the thickness of a 3D TI to be about three times of ξ. In one novel aspect of the current invention, methods are provided to increase zT of the TI by substantially maximizing a relative thermoelectric-transport contribution of the boundary state with respect to the bulk states.

Description

[0001] This application claims U.S. Provisional Application No. 61 / 910,541, filed December 2, 2013, entitled "Topological Insulator-Based Thermoelectric Structures and Devices," and U.S. Provisional Application No. 14 / 207,478, filed March 12, 2014 The benefit of the Provisional Application, which is incorporated herein by reference. technical field [0002] The disclosed embodiments generally relate to thermoelectric structures and devices. More specifically, thermoelectric structures and devices based on topological insulators. Background technique [0003] The world's demand for energy is growing rapidly. At the same time, people are paying more and more attention to the environmental problems caused by burning traditional chemical energy such as natural gas, oil and coal. In recent years, a lot of research is looking for alternative green energy. It has been discovered a long time ago that the thermoelectric effect can directly realize the interconversion of heat and e...

Claims

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Application Information

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IPC IPC(8): H01L35/32
CPCH10N10/17
Inventor 徐勇甘中学张首晟
Owner ENN SCI & TECH DEV
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