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Method for controllably preparing amorphous-polycrystalline hybrid bismuth telluride base film by adopting vacuum evaporation coating

A bismuth telluride-based film and vacuum evaporation technology, which is applied in vacuum evaporation plating, chemical instruments and methods, polycrystalline material growth, etc., to achieve the effects of simple method, loose production environment conditions, and high power factor

Active Publication Date: 2021-07-13
HENAN AGRICULTURAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

According to our knowledge, this novel amorphous-polycrystalline hybrid Bi 0.5 Sb 1.5 Te 3 Membrane has no patents and literature reports so far

Method used

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  • Method for controllably preparing amorphous-polycrystalline hybrid bismuth telluride base film by adopting vacuum evaporation coating
  • Method for controllably preparing amorphous-polycrystalline hybrid bismuth telluride base film by adopting vacuum evaporation coating
  • Method for controllably preparing amorphous-polycrystalline hybrid bismuth telluride base film by adopting vacuum evaporation coating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Preparation of Amorphous-Polycrystalline Hybrid Bi by Evaporation Coating on Substrate 0.5 Sb 1.5 Te 3 membrane:

[0045] (1) Bi with a mass percent purity of 99.99% 0.5 Sb 1.5 Te 3 The powder is compressed into a block under a pressure of 4MPa; the Bi 0.5 Sb 1.5 Te 3 The average particle size of the powder is less than 50 μm;

[0046] (2) The substrate was ultrasonically cleaned in absolute ethanol and deionized water for 10 minutes, then taken out, and dried with high-purity 99.999% nitrogen;

[0047] (3) 0.15g of Bi 0.5 Sb 1.5 Te 3 Put the block made of the material into the tungsten boat in the vacuum chamber of the vacuum coating machine, place the substrate on the sample stage, and adjust the distance d=8cm between the substrate and the tungsten boat;

[0048] (4) Fill the vacuum chamber with nitrogen for 3 minutes and stop, then evacuate the vacuum chamber so that the vacuum degree in the vacuum chamber reaches 3.0×10 －4 Pa;

[0049] (5) The vacuum ...

Embodiment 2

[0057]Preparation of Amorphous-Polycrystalline Hybrid Bi by Evaporation Coating on Substrate 0.5 Sb 1.5 Te 3 Membrane: (preferable)

[0058] (1) Bi with a mass percent purity of 99.99% 0.5 Sb 1.5 Te 3 The powder is compressed into a block under a pressure of 5 MPa; the Bi 0.5 Sb 1.5 Te 3 The average particle size of the powder is less than 50 μm;

[0059] (2) The substrate was ultrasonically cleaned in absolute ethanol and deionized water for 8 minutes, then taken out, and dried with high-purity 99.999% nitrogen;

[0060] (3) 0.15g of Bi 0.5 Sb 1.5 Te 3 Put the block made of material into the tungsten boat in the vacuum chamber of the vacuum coating machine, place the substrate on the sample stage, and adjust the distance d=9cm between the substrate and the tungsten boat;

[0061] (4) Fill the vacuum chamber with nitrogen for 6 minutes and stop, then evacuate the vacuum chamber so that the vacuum degree in the vacuum chamber reaches 4.0×10 －4 Pa;

[0062] (5) The...

Embodiment 3

[0070] Preparation of Amorphous-Polycrystalline Hybrid Bi by Evaporation Coating on Substrate 0.5 Sb 1.5 Te 3 membrane:

[0071] (1) Bi with a mass percent purity of 99.99% 0.5 Sb 1.5 Te 3 The powder is compressed into a block under a pressure of 5 MPa; the Bi 0.5 Sb 1.5 Te 3 The average particle size of the powder is less than 50 μm;

[0072] (2) The substrate was ultrasonically cleaned in absolute ethanol and deionized water for 5 minutes, then taken out, and dried with high-purity 99.999% nitrogen;

[0073] (3) Add 0.2g of Bi 0.5 Sb 1.5 Te 3 Put the block made of material into the tungsten boat in the vacuum chamber of the vacuum coating machine, place the substrate on the sample stage, and adjust the distance d=10cm between the substrate and the tungsten boat;

[0074] (4) Fill the vacuum chamber with nitrogen for 8 minutes and then stop, then evacuate the vacuum chamber so that the vacuum degree in the vacuum chamber reaches 5.0×10 －4 Pa;

[0075] (5) The va...

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Abstract

The invention relates to a method for controllably preparing an amorphous-polycrystalline hybrid bismuth telluride base film by adopting vacuum evaporation coating. The method comprises the following steps of: (1) pressing Bi0.5Sb1.5Te3 powder with the mass percent purity of 99.99 percent into a block body under the pressure of 4 to 6MPa; (2) after carrying out ultrasonic washing on a substrate in absolute ethyl alcohol and de-ionized water for 5min to 10min respectively, taking out the substrate and drying with nitrogen gas; (3) putting 0.1 to 0.2g of the block body into a vacuum coating machine; (4) introducing the nitrogen gas into a vacuum chamber for 3 to 8min to enable the vacuum degree to reach 2.0 * 10 < -4 >Pa to 5.0 * 10 < -4 >Pa; (5) setting a heating temperature to be 50 to 180 DEG C and raising the temperature of the substrate; (6) after raising the temperature to a pre-set temperature, introducing argon gas and adjusting the air pressure to 1.0 * 10 < -2 >Pa to 3.0 * 10 < -2 >Pa; setting the deposition speed to be 30 to 45nm / min on a PID controller and setting the deposition time to be 60 to 90min; (7) adjusting output current to be 170A to 185A; opening a sample platform and rotating for 20r / min to 25r / min; starting to deposit and prepare the amorphous-polycrystalline hybrid Bi0.5Sb1.5Te3 film on the substrate; and (8) finishing preparation. The method provided by the invention has a simple technology and a very remarkable effect.

Description

technical field [0001] The invention relates to a method for controllably preparing an amorphous-polycrystalline bismuth telluride base film by physical vapor deposition, in particular to a method for controllably preparing an amorphous-polycrystalline bismuth telluride base film by vacuum evaporation coating . Background technique [0002] A thermoelectric material is a solid material that can realize mutual conversion between thermal energy and electrical energy. The quality factor zT(zT=TσS 2 / κ, T is the temperature, σ is the electrical conductivity, S is the Seebeck coefficient, κ is the thermal conductivity), and zT represents a characteristic of the thermoelectric material, which determines the maximum power that the device can achieve. Among all current thermoelectric materials, Bi 2 Te 3 The semiconductor material has the highest room temperature thermoelectric quality factor zT, and the current commercial Bi 2 Te 3 The zT value of thermoelectric materials is g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/06C23C14/54C30B28/12C30B29/46
CPCC23C14/24C23C14/54C23C14/0623C30B28/12C30B29/46
Inventor 谭明王亚玲郑丹张益维祁诗阳李辉张梦娇李聪
Owner HENAN AGRICULTURAL UNIVERSITY
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