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46 results about "Flux method" patented technology
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Flux method is a method of crystal growth where the components of the desired substance are dissolved in a solvent (flux). The method is particularly suitable for crystals needing to be free from thermal strain. It takes place in a crucible made of highly stable, non-reactive material. For production of oxide crystals, metals such as platinum, tantalum, and niobium are common. Production of metallic crystals generally uses crucibles made from ceramics such as alumina, zirconia, and boron nitride. The crucibles and their contents are often isolated from the air for reaction, either by sealing them in a quartz ampoule or by using a furnace with atmosphere control. A saturated solution is prepared by keeping the constituents of the desired crystal and the flux at a temperature slightly above the saturation temperature long enough to form a complete solution. Then the crucible is cooled in order to allow the desired material to precipitate. Crystal formation can begin by spontaneous nucleation or may be encouraged by the use of a seed. As material precipitates out of the solution, the amount of solute in the flux decreases and the temperature at which the solution is saturated lowers. This process repeats itself as the furnace continues to cool until the solution reaches its melting point or the reaction is stopped artificially.
Growth device and method suitable for mass production of crystals by flux method / liquid phase method
ActiveCN120776440APolycrystalline material growthLiquid-phase epitaxial-layer growthPhysical chemistryGallium nitride
The invention discloses a growth device and method suitable for mass production of crystals by a fluxing agent method / liquid phase method. The growth method comprises the following steps: putting a seed crystal and a liquid phase growth raw material into a first growth container, putting the seed crystal into a second growth container, keeping the temperature of a first temperature zone at a first temperature T1, keeping the temperature of a second temperature zone at a second temperature T2, keeping the temperature of a third temperature zone at a third temperature T3, other growth conditions required by crystal growth are provided in the growth chamber; and rotating the rotary lifting frame to drive the second growth container and the seed crystal carried by the second growth container to rotate along a selected rotating track, so that the second growth container and the seed crystal carried by the second growth container are repeatedly transferred between the first temperature zone and the second temperature zone and are repeatedly immersed into the liquid phase growth raw material in the first growth container. The method can be used for industrially producing high-quality single crystals such as gallium nitride with different sizes in batches, and the production efficiency and quality are improved.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Method for preparing uranium dioxide single crystal by using molten salt method and obtained uranium dioxide single crystal
The invention provides a method for preparing a uranium dioxide single crystal by using a molten salt method and the obtained uranium dioxide single crystal, aiming at solving the problem that the growth of different crystal faces cannot be controlled when the uranium dioxide single crystal is prepared by using an existing fluxing agent method. The method comprises the following steps: in the presence of a reducing agent and a surface active substance, heating U3O8 powder in molten salt to a heat preservation temperature, preserving heat, and then cooling and growing to obtain the uranium dioxide single crystal, wherein the surface active substance is SiO2 (silicon dioxide), GeO2 (germanium dioxide), V2O5 (vanadium pentoxide) or Na2WO4 (titanium dioxide). According to the method, U3O8 is taken as a raw material, a molten salt fluxing agent is combined, the reducing agent is used for reducing U3O8 and growing the UO2 crystal, and the preferred crystal face of UO2 in the nucleation and growth processes is effectively controlled by selecting a proper surface active substance and changing the surface energy of UO2 in the nucleation and growth processes, so that the UO2 single crystal with the preferred crystal face and an ordered structure is obtained.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACAD OF SCI +1
Fluorinated guanidinium borate nonlinear optical crystal, method for preparing the same, and use thereof
PendingCN122147526APolycrystalline material growthFrom normal temperature solutionsNonlinear optical crystalCrystal system
The application provides a fluorinated guanidinium borate nonlinear optical crystal and a preparation method and application thereof. The chemical formula of the crystal is [C(NH2)3]B6O9F, the molecular weight is 287.95, the crystal belongs to an orthorhombic system, the space group is Pnma, Pna 21, the cell parameter is a=7.8420(11) Å, b=15.1862(19) Å, c=8.5762(9) Å, α =90°, β =90°, γ =90°, the unit cell volume is 1021.3(2) ų, the crystal is grown by a high-temperature solution method or a flux method, the frequency doubling effect of the crystal is 0.4 times of that of KH2PO4 (KDP), the ultraviolet cutoff edge is 190 nm, the birefringence is large, the birefringence is 0.133 @ 1064 nm, and the deep ultraviolet phase matching capability is deep, the shortest matching wavelength is 196 nm, and the crystal can be applied to deep ultraviolet nonlinear optical crystals in a full solid-state laser.
Owner:XINJIANG TECH INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
Rare earth borate second-order nonlinear optical crystal as well as preparation method and application thereof
PendingCN121046951APolycrystalline material growthFrom melt solutionsNonlinear optical crystalUltraviolet
The invention provides a rare earth borate second-order nonlinear optical crystal and a preparation method and application thereof, and belongs to the technical field of optical crystal materials. The compound is prepared by a solid-phase synthesis method and a fluxing agent method, and the preparation method comprises the step of growing the rare earth borate nonlinear optical crystal by adopting the fluxing agent method. The obtained product has a large frequency-doubled effect, a large optical band gap, a short ultraviolet cut-off edge and stable physical and chemical properties, and can be used for preparing an ultraviolet nonlinear optical frequency conversion device.
Owner:TIANJIN UNIVERSITY OF TECHNOLOGY
High-quality gallium nitride crystal and fluxing agent growth method and application thereof
The invention discloses a high-quality gallium nitride crystal and a fluxing agent growth method and application thereof. The growth method comprises the steps that a first fluxing agent system is adopted for primary growth to obtain an intermediate crystal, a plurality of gallium nitride nanowires are formed on the growth face of the intermediate crystal to form a nanowire template layer, and the first fluxing agent system contains metal nickel; a second fluxing agent system is adopted, secondary growth is carried out on the basis of the middle crystal, a combined growth layer which grows outwards in a combined mode from the nanowire template layer is formed, and finally the high-quality gallium nitride crystal is obtained. According to the method, the crystal growth is realized by adopting a two-step fluxing agent method, the gallium nitride nanowires are formed by utilizing the catalytic action of metal nickel during the first growth, the nanowire template layer formed by the gallium nitride nanowires has the characteristics of compactness and uniformity, and the gallium nitride crystal obtained by carrying out the secondary growth based on the nanowire template layer is uniform in growth and high in yield. The dislocation density of regrown gallium nitride is reduced more effectively, and the stress is reduced at the same time.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Ga-based room-temperature van der waals ferromagnetic crystal material, preparation, and use
The present invention provides a Ga-based van der Waals room-temperature ferromagnetic crystal material, preparation and use thereof, which belong to the technical field of nano magnetic material preparation. The materials include Fe3-aGabTe2(a=-0.3 to 0.1, b=0.8 to 1.2) and Fe5-cGeGadTe2(c=-0.2 to 0.2, d=0.01 to 0.5). The growth method of Fe3-aGabTe2(a=-0.3 to 0.1, b=0.8 to 1.2) is a self-flux method, using excess Ga and Te as flux to grow crystals. The growth method of Fe5-cGeGadTe2(c=-0.2 to 0.2, d=0.01 to 0.5) is the chemical vapor transport method, using iodine as a transport agent to grow crystals. The Ga-based van der Waals room-temperature ferromagnetic crystal Fe3-aGabTe2(a=-0.3 to 0.1, b=0.8 to 1.2) and Fe5-cGeGadTe2(c=-0.2 to 0.2, d=0.01 to 0.5) materials provided by the present invention have uniform constituents, have a van der Waals structure, may be easily exfoliated mechanically, the Curie temperature thereof is 330 K to 367 K and 320 K to 345 K, and the saturation magnetic moments are 50 emu / g to 57.2 emu / g and 80 emu / g to 88.5 emu / g, respectively. The perpendicular magnetic anisotropy energy of Fe3-aGabTe2(a=-0.3 to 0.1, b=0.8 to 1.2) single crystal is as high as 3.25×105 to 4.79×105 J / m3.
Owner:HUAZHONG UNIV OF SCI & TECH
Compound selenium indium cesium and selenium indium cesium infrared nonlinear optical crystal, preparation method and application thereof
ActiveCN119710931BPolycrystalline material growthFrom solid stateNonlinear optical crystalCrystal system
The present application relates to a kind of compound selenium indium cesium and selenium indium cesium infrared nonlinear optical crystal and preparation method and application, the molecular formula of the compound is CsIn5Se8, molecular weight is 1338.69, the molecular formula of the crystal is CsIn5Se8, molecular weight is 1338.69, the structure has asymmetric center, belongs to triclinic system, space group is P 1, unit cell parameters are: a=9.1506 (3) Å, b=9.1793 (3) Å, c=11.2778 (3) Å, α=89.9560 (10) °, β=72.0140 (10) °, γ=72.0340 (10) °, Z=2, volume is 852.38 (5) Å 3 High-temperature melt method, chemical vapor transport method, crucible drop method or flux method are used to prepare crystal. The obtained selenium indium cesium infrared nonlinear optical crystal has large nonlinear optical response and good crystal growth habit, good mechanical properties, not easy to break and deliquesce, easy to process and save, etc. It can be used to make infrared nonlinear optical devices, which has important use in the fields of photoelectric countermeasure, spectral technology, laser communication and remote sensing.
Owner:XINJIANG TECH INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
Multifunctional terbium iron borate magnetic refrigeration crystal material as well as preparation method and application thereof
PendingCN120600438AMagnetic materialsInductances/transformers/magnets manufactureMetallurgyPhysical chemistry
The invention discloses a multifunctional terbium iron borate magnetic refrigeration crystal material as well as a preparation method and application thereof, and the multifunctional terbium iron borate magnetic refrigeration crystal material is prepared by taking a terbium-containing compound A, an iron-containing compound A and a boron-containing compound A as raw materials and adopting a fluxing agent method. Experiments prove that the multifunctional terbium iron borate magnetic refrigeration crystal material not only has a traditional magnetothermal effect but also has a diamagnetothermal effect in a low-temperature region below 60K, and has a very strong anisotropic magnetothermal effect, so that the multifunctional terbium iron borate magnetic refrigeration crystal material can have a wider application scene; for example, development and application of rotary magnetic refrigerators and heat dissipation electronic devices are realized.
Owner:HEFEI NORMAL UNIV +1
Method for improving thickness and quality uniformity of crystal growth, repair method, and crystal
ActiveCN121575473BImprove thickness uniformityImprove quality uniformityPolycrystalline material growthLiquid-phase epitaxial-layer growthMolten stateNitrogen source
The application discloses a method for improving the thickness and quality uniformity of crystal growth, a repairing method and a crystal. The method comprises the following steps: providing a growth system required for growing a group III nitride crystal by a flux method liquid phase epitaxy, forming a temperature gradient between a top layer part and a bottom layer part of a molten growth material, so as to form a closed circulation flow field of the molten growth material and a nitrogen source in the molten growth material; and in an initial stage of the growth of the group III nitride crystal, adjusting the temperature gradient to a positive temperature gradient, and then alternately switching the temperature gradient between the positive temperature gradient and a negative temperature gradient, so as to change the nitrogen source concentration distribution and the growth rate of different regions of a growth interface of the group III nitride crystal, until the growth interface of the group III nitride crystal presents as a flat surface. The method provided by the application is simple in operation and wide in application range, and can reduce the production cost and improve the yield of the crystal.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Ba3Sc2(BO3)4 ultraviolet birefringent crystals, preparation and applications
ActiveCN115726040BPolycrystalline material growthPolarising elementsCrystal systemBirefringent crystal
The present invention provides a Ba3Sc2(BO3)4 ultraviolet birefringent crystal, preparation and application. The Ba3Sc2(BO3)4 ultraviolet birefringent crystal has a centrosymmetric structure, belongs to the trigonal crystal system, has a space group of P-3m1, and has unit cell parameters of #imgabs0##imgabs1#α=90°, β=90°, γ=120°, Z=1, #imgabs2#. The room temperature transmission spectrum shows that the ultraviolet birefringent crystal has a wide transmission range (0.2~3.5μm), a transmittance of more than 70%, a short ultraviolet cutoff edge (198nm) and a large birefringence (Δn=0.145), and has the advantages of stable physicochemical properties, good mechanical properties, not easy to deliquesce, easy to cut, polished and stored, and is expected to be widely used in the field of ultraviolet birefringent optical materials. In the present invention, a flux method is adopted to prepare the ultraviolet birefringent crystal, which is simple to operate, the raw materials are readily available, and the preparation conditions are easy to achieve.
Owner:TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Compound arsenic silicon gallium strontium and arsenic silicon gallium strontium infrared nonlinear optical crystal, preparation method and application
PendingCN122102134APolycrystalline material growthLaser detailsNonlinear optical crystalHexagonal crystal system
The application relates to a compound arsenic-silicon-gallium-strontium and an infrared nonlinear optical crystal of arsenic-silicon-gallium-strontium, a preparation method and application, the compound has a molecular formula of SrGa3Si4As 11 , a molecular weight of 1233.26 g / mol, an asymmetric center, and is crystallized in a hexagonal crystal system P , a 63 space group, a cell parameter of a=b=9.2604(3) A, c=11.6484(5) A, Z=2, and V=865.08(7) A 3 , and is prepared into a crystal by using a high-temperature melt method, a chemical vapor phase transmission method or a flux method. The crystal has strong laser damage resistance, large nonlinear optical effect, wide infrared transmission range, and simultaneously has the advantages of large hardness, good mechanical property, not easy to break and deliquesce, easy to process and store and the like, and can be used for manufacturing infrared nonlinear optical devices.
Owner:XINJIANG TECH INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
Gd2O2S: Tb < 3 + > / CQDs composite luminescent material and preparation method thereof
The invention discloses a Gd2O2S: Tb < 3 + > / CQDs composite luminescent material and a preparation technology thereof. The Gd2O2S: Tb < 3 + > / CQDs composite luminescent material is formed by chemically bonding Gd2O2S: Tb < 3 + > fluorescent powder and CQDs. The preparation process of the composite luminescent material comprises the following steps: firstly synthesizing Gd2O2S: Tb < 3 + > fluorescent powder by adopting a vulcanization fluxing method, then preparing CQDs by adopting a one-step pyrolysis method, and finally carrying out hydrothermal composite treatment on the Gd2O2S: Tb < 3 + > fluorescent powder and the CQDs to obtain the Gd2O2S: Tb < 3 + > / CQDs composite luminescent material, and compared with the Gd2O2S: Tb < 3 + > fluorescent material, the luminescent intensity of the composite luminescent material is obviously improved.
Owner:CHANGCHUN UNIV OF SCI & TECH
Preparation method of high-entropy Kagome material HEV6Sn6
PendingCN120400973APolycrystalline material growthFrom melt solutionsRare-earth elementPhase formation
The invention discloses a preparation method of a high-entropy Kagome material HEV6Sn6, which comprises the following steps of: 1, mixing Ho, Gd and Tb rare earth powder with V and Sn metal powder, and grinding and uniformly mixing under the protection of Ar atmosphere to obtain uniformly mixed powder; 2, loading the uniformly mixed powder into an Al2O3 crucible, transferring the Al2O3 crucible into a quartz tube, and sealing the quartz tube; 3, heating, sintering and preserving heat; and 4, cooling the quartz tube, and centrifugally separating the redundant Sn fluxing agent to obtain the high-entropy Kagome material HEV6Sn6. According to the method, a self-fluxing agent method is adopted, three different rare earth elements Ho, Gd and Tb are doped into the vanadium-based Kagome material at the same time, all the rare earth elements are evenly distributed on rare earth sites, obvious phase separation does not occur, the high-entropy Kagome material HEV6Sn6 is successfully constructed for the first time, introduction of new impurities can be avoided, phase formation is simple, and the method is suitable for industrial production. The method is suitable for the field of novel high-entropy spinning anti-contusion materials.
Owner:NORTHWEST INSTITUTE FOR NONFERROUS METAL RESEARCH
Convection buffering device and method for growing doped gallium nitride single crystal by flux method
PendingCN121272531APolycrystalline material growthFinal product manufactureGallium nitridePositive temperature
The invention discloses a convection buffering device and method for growing a doped gallium nitride single crystal by a fluxing agent method, and belongs to the technical field of crystal material preparation. A growth cavity is formed in an autoclave body, and a splitter plate is mounted in the middle of the growth cavity; a spoiler seat is mounted at the upper part of the splitter plate, a chuck is mounted at the lower part of the splitter plate, and a flow guide cover is arranged below the chuck; a plurality of through holes are formed in the splitter plate close to the edge; the upper heating element and the middle heating element outside the growth cavity are used for forming a positive temperature gradient at the upper part of the growth cavity; the middle heating element and the lower heating element are used for forming a negative temperature gradient; according to the invention, the conversion and buffering of heat flow from an annular opposite direction to an axial direction are realized, harmful convection is effectively inhibited, and the growth interface stability and doping uniformity are improved, so that high-quality doped gallium nitride single crystals are obtained.
Owner:XI AN JIAOTONG UNIV
Flux recovery device and method for growing gallium nitride single crystal by flux method
PendingCN121451277APolycrystalline material growthFrom melt solutionsGallium nitrideSingle crystal growth
The invention discloses a fluxing agent recovery device and method for growing gallium nitride single crystals through a fluxing agent method, and belongs to the technical field of crystal material preparation. The device comprises a high-pressure cavity which internally comprises a flow choking cover, a backflow cavity and a single crystal growth cavity from top to bottom in sequence; wherein the backflow cavity is of a double-cone flow guide structure; the top of the backflow cavity is covered with the flow choking cover. The pressure regulation and control system comprises a pressure oscillation gas circuit, a crystal growth gas circuit and a pressure controller; the pressure oscillation gas circuit is used for introducing inert gas into the high-pressure cavity; the crystal growth gas circuit is directly communicated to the single crystal growth cavity from the outside of the high-pressure cavity, the crystal growth gas circuit and the pressure oscillation gas circuit are both connected with the pressure controller, and the pressure controller is used for periodically adjusting the internal pressure of the high-pressure cavity and controlling gas introduction of the crystal growth gas circuit. The heating element is used for heating the backflow cavity and the single crystal growth cavity respectively; according to the invention, the grown crystal can be effectively separated from the fluxing agent, and recovery of the fluxing agent is realized.
Owner:XI AN JIAOTONG UNIV
Method for improving growth thickness and quality uniformity of crystal, repairing method and crystal
ActiveCN121575473APolycrystalline material growthLiquid-phase epitaxial-layer growthMolten stateNitrogen source
The invention discloses a method for improving crystal growth thickness and quality uniformity, a repairing method and a crystal. The method comprises the following steps: providing a growth system required by liquid phase epitaxy growth of the III-group nitride crystal by a fluxing agent method, and forming a temperature gradient between a top layer part and a bottom layer part of a molten growth raw material so as to form a closed circulation flow field of the molten growth raw material and a nitrogen source in the molten growth raw material; and at the initial stage of III-nitride crystal growth, adjusting the temperature gradient into a positive temperature gradient, and alternately switching the temperature gradient between the positive temperature gradient and a negative temperature gradient so as to change the nitrogen source concentration distribution and the growth rate of different areas of the growth interface of the III-nitride crystal, until the growth interface of the group III nitride crystal is a flat surface. The method provided by the invention is simple to operate and wide in application range, and can reduce the production cost and improve the crystal yield.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Self-adaptive temperature compensation method for growing gallium nitride single crystal by sodium fluxing agent method
PendingCN121853175APolycrystalline material growthFrom melt solutionsChemical physicsPhysical chemistry
The invention discloses a self-adaptive temperature compensation method for growing gallium nitride single crystals by a sodium fluxing agent method, and belongs to the technical field of semiconductor crystal growth. The method comprises the following steps: in an inert atmosphere, putting sodium, gallium, carbon and a seed crystal into a crucible together, putting the crucible into a high-pressure reaction kettle, vacuumizing, filling nitrogen, and heating to a preset temperature and pressure; a dynamic regulation and control temperature function is calculated, and a temperature regulation and control function T = a4t + b4 is established; self-adaptive compensation is started in the later growth period (larger than or equal to 120 h), and the temperature is adjusted according to the formula T = a4t + b4; according to the method, fluctuation and attenuation of the supersaturation degree are automatically corrected through temperature compensation, the stable growth time of the crystal can be prolonged to 200 h or above, the dislocation density is smaller than or equal to 5 * 10 < 5 > cm <-2 >, and the method is suitable for efficient preparation of the high-quality gallium nitride single crystal of 2 inches or above.
Owner:JIANGXI SCI & TECH NORMAL UNIV
Cobalt-based layered ferromagnetic metal material KCo2S2 and single crystal growth method thereof
The invention provides a cobalt-based layered ferromagnetic metal material KCo2S2 and a single crystal growth method thereof, the method comprises the following steps: using a fluxing agent method to grow a single crystal under a heating condition, the fluxing agent is CoS, the CoS fluxing agent does not introduce other impurity elements into the KCo2S2 single crystal, and the purity of the KCo2S2 single crystal is ensured. According to the method, the large-size and single-crystal cobalt-based layered material KCo2S2 is prepared, and the surface magnetic susceptibility of the material has obvious anisotropy.
Owner:INSTITUTE OF QUANTUM MATERIALS & PHYSICS HENAN ACADEMY OF SCIENCES
Preparation method for growing GaN crystal by eliminating interference of water and oxygen
The invention belongs to the technical field of growth and preparation of gallium nitride crystals, and particularly relates to a preparation method for growing GaN crystals by eliminating interference of water and oxygen. The method comprises the following steps: putting a sodium-containing cosolvent, metal gallium and an additive into a transfer crucible in a glove box filled with protective gas, heating the transfer crucible, stopping heating after melting, and cooling to obtain a metal gallium sheet; placing the GaN seed crystal in a growth crucible, inversely buckling the transfer crucible on the growth crucible, transferring the metal gallium sheet into the growth crucible, heating, melting, cooling and solidifying; and transferring the growth crucible from the glove box to a reaction kettle of crystal growth equipment, introducing nitrogen under a vacuum condition, heating for reaction, cooling, washing and drying to obtain the GaN crystal. The transfer crucible process provided by the invention can simply and effectively eliminate the influence of water and oxygen in the environment on growth of GaN crystals by a flux method, and is simple in process method, low in cost, good in repeatability and suitable for commercialized mass production.
Owner:JIANGXI SCI & TECH NORMAL UNIV
System and method for growing uniform nitride single crystals using flux method
The present invention discloses a system and method for growing uniform nitride single crystals using a flux method. The system includes: a single crystal growth unit, a raw material circulation unit, a stirring unit, and a nitrogen supply unit; the single crystal growth unit includes a reaction chamber for reactively growing nitride single crystals, the raw material circulation unit includes a circulation chamber for accommodating the raw materials required for growing nitride single crystals, the reaction chamber and the circulation chamber are interconnected, and the raw materials can circulate between the reaction chamber and the circulation chamber; the stirring unit is at least used to stir the raw materials in the circulation chamber and / or the reaction chamber; the nitrogen supply unit is at least used to provide nitrogen to the circulation chamber and / or the reaction chamber. The present invention utilizes the raw material circulation unit and the stirring unit to circulate and stir the raw materials in the reaction chamber and the circulation chamber, so that the grown nitride single crystals have better uniformity and higher quality.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Compound Selenium Phosphorus Mercury and Selenium Phosphorus Mercury Infrared Nonlinear Optical Crystal, Preparation Method and Application
ActiveCN116902933BPolycrystalline material growthPhosphorus sulfur/selenium/tellurium compoundsNonlinear optical crystalCrystal system
The present invention relates to a compound of mercury selenophosphide, a mercury selenophosphide infrared nonlinear optical crystal, a preparation method and an application thereof. The molecular formula of the compound is Hg7P2Se 12 , and its molecular weight is 1206.79. The molecular formula of the crystal is Hg7P2Se 12 , and its molecular weight is 1206.79. It has no center of symmetry, belongs to the triclinic system, and the space group is P 1. The unit cell parameters are: a = 12.573(2) Å, b = 14.523(2) Å, c = 16.247(2) Å, α = 77.509(5)°, β = 75.191(6)°, γ = 73.051(5)°, Z = 5, and the volume is 2711.1(7) Å 3 . The crystal is prepared by the methods of high-temperature melt method, chemical vapor transport method, flux method or Bridgman method. The crystal has the advantages of high laser damage resistance, moderate nonlinear optical effect, wide transmission band, large hardness, good mechanical properties, not easy to break and deliquesce, easy to process and preserve, etc., and can be used for manufacturing infrared nonlinear optical devices.
Owner:XINJIANG TECH INST OF PHYSICS & CHEM CHINESE ACAD OF SCI
Non-Archimedes mosaic lattice structure and compound material thereof
PendingCN121826902APolycrystalline material growthFrom melt solutionsCrystal systemMaterials science
The invention belongs to the field of condensed physical and quantum materials, and discloses a non-Archimedes mosaic lattice structure and a compound material thereof. The lattice is a periodic network which is formed by closely arranging and splicing at least three different types of geometrical shapes (including triangles, quadrangles, pentagons and the like) in a two-dimensional plane in a common-edge or common-angle mode, and a traditional Archimedes lattice frame is broken through. The preparation of the single crystal from the compound A3M9X13 (such as Rb3V9Te13 and Cs3V9Te13) of the crystal lattice through a fluxing agent method is realized for the first time. Wherein Rb3V9Te13 belongs to an orthorhombic system and contains a distorted pentagonal unit; the Cs3V9Te13 belongs to a hexagonal crystal system, and the symmetry is higher. According to the structure, complex file blocking units such as pentagons are introduced, a unique platform is provided for exploring quantum singular matter states, and the compound has structure tunability.
Owner:SHANGHAI JIAOTONG UNIV
A method for preparing zirconium pentatelluride thin film
ActiveCN119776993BPolycrystalline material growthAfter-treatment detailsThin membraneUltrasonic dispersion
The present invention discloses a method for preparing a zirconium pentatelluride thin film, specifically comprising the following steps: first, growing ZrTe5 crystals using a flux method, grinding them into powder, and adding a dispersant for intercalation treatment to weaken the van der Waals forces between the ZrTe5 crystal layers; then, using ultrasonic dispersion technology, preparing a ZrTe5 dispersion with good dispersibility. To improve the stability of the dispersion, a stabilizer is further added to significantly enhance the dispersion and stability of the ZrTe5 particles in the solution. Finally, a uniform thin film is deposited by spin coating or drop coating. The method of the present invention is simple to operate, low-cost, and suitable for the preparation and application of topological functional materials.
Owner:EAST CHINA NORMAL UNIV
Crystal interface regulation and control device and method for sodium fluxing agent method gallium nitride single crystal growth
The invention discloses a crystal interface regulation and control device and method for sodium flux method gallium nitride single crystal growth, and belongs to the technical field of crystal material preparation.The device comprises a reaction kettle body, a crucible is arranged in the reaction kettle body, the inner wall of the crucible is of a step structure, a flow guide plate is arranged on the step, and a side wall heating unit is arranged on the side wall of the reaction kettle body; a bottom heating unit is arranged at the bottom, and the reaction kettle body and the bottom of the crucible are of an embedded step structure. The embedded inner and outer step design of the reaction kettle body and the bottom of the crucible hinders heat transfer of the bottom heating unit and the side wall heating unit at the bottom of the reaction kettle body, and the supersaturation degree of gallium nitride in alloy melt is maintained to be slightly higher than the two-dimensional critical nucleation supersaturation degree through the side wall heating unit. The bottom heating unit is used for carrying out temperature control on the contact surface of the crystal and the alloy melt to form periodic temperature change, so that periodic regulation and control are carried out on the gallium nitride supersaturation degree of a crystal growth interface, and the quality and yield of the gallium nitride single crystal are improved.
Owner:XI AN JIAOTONG UNIV
Zr-Ru-Si-based ternary superconducting single crystal material, preparation method and application thereof, and terminal product
PendingCN121344773APolycrystalline material growthSuperconductors/hyperconductorsSpace groupPhysical chemistry
The invention relates to the technical field of superconducting single crystal materials, and discloses a Zr-Ru-Si-based ternary superconducting single crystal material, the chemical general formula is ZrxRuySiz, x is equal to 1.8-2.2, y is equal to 2.5-3.5, and z is equal to 3.5-4.5. The superconducting single crystal material belongs to a typical ternary transition metal silicide system, and a Si element is introduced to participate in construction of a crystal skeleton, so that a stable silicide structure is formed; the crystal belongs to a monoclinic system C2 / c space group, and has unique spatial symmetry and a three-dimensional crystal skeleton; and the material has good crystallinity and high purity, and shows a superconducting transition behavior at the temperature of 5.4 K. The growth is carried out by adopting a fluxing agent method, the operation is simple and convenient, the cost is controllable, the method is suitable for large-scale exploration, and a foundation is laid for the development of other potential superconducting phases in a subsequent Zr-Ru-Si ternary system. The invention further discloses a preparation method and application of the Zr-Ru-Si-based ternary superconducting single crystal material and a terminal product.
Owner:BINZHOU WEIQIAO NATIONAL SCIENCE & TECHNOLOGY ADVANCED TECHNOLOGY RESEARCH INSTITUTE
Reaction kettle suitable for growing GaN by flux method
The invention discloses a reaction kettle suitable for growing GaN by a flux method, and relates to the technical field of gallium nitride single crystal growth equipment. The high-temperature reaction kettle comprises a kettle body, a sealing cover, a fastener and a condensation pipe, a groove with an annular protrusion is formed in the open end of the kettle body, a corresponding protrusion is arranged on the lower portion of the sealing cover, a main sealing interface is formed between the groove and the sealing cover by extruding a soft sealing ring, and sodium steam is effectively prevented from overflowing. The top of the sealing cover is connected with a condensation pipe with a sleeve, and a cooling medium is introduced to enable volatilized steam to be condensed and refluxed, so that the stability of melt components is maintained. The fastener is connected with the kettle body through a thread or a nut and presses the sealing cover downwards, and a gasket is arranged between the fastener and the sealing cover. The problems that the crystal quality is reduced and the reaction kettle is difficult to open due to sodium volatilization when the gallium nitride crystal is grown by a fluxing agent method are solved, and the device has the advantages of reliability in sealing, simplicity and convenience in operation and long service life.
Owner:DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
Method, system and detection method for growing gallium nitride single crystal by flux method
The present invention discloses a method, system, and detection method for growing gallium nitride single crystals using a flux method. The method comprises: applying a voltage to a molten growth material during liquid phase epitaxial growth of a gallium nitride single crystal using a flux method to at least cause the molten growth material to flow and / or reduce the surface energy of the molten growth material. An embodiment of the present invention provides a method for growing uniform gallium nitride single crystals using a voltage-induced flux method. The method uses a voltage to cause the molten growth material within the growth system to flow, thereby enabling more thorough and uniform mixing of the material, thereby growing a gallium nitride bulk single crystal of more uniform quality.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Method for preparing rare earth aluminum-based intermetallic compound EuAl4 single crystal by Al fluxing agent method
The invention discloses a method for preparing a rare earth aluminum-based intermetallic compound EuAl4 single crystal by an Al fluxing agent method. The method comprises the following steps: A, cutting Al particles into small sizes in a glove box; after the Eu piece is subjected to oil removal treatment, the Eu piece is transferred into a glove box to be polished; b, weighing Al particles and Eu sheets in a glove box, and placing the Al particles and the Eu sheets in a No.1 alumina crucible; c, placing a No.1 alumina crucible in a quartz tube, and placing a filter screen above the crucible; d.2, quartz wool is placed in a No.2 alumina crucible, and the No.2 alumina crucible is placed in a quartz tube with an opening facing downwards; e, placing quartz wool above a No.2 alumina crucible, and then placing a quartz column; f, locking the quartz tube by using a tube sealing buckle and then transferring the quartz tube out of the glove box; g, performing vacuum sealing on the quartz tube by using a vacuum tube sealing machine; h, cutting the sealed quartz tube to the upper part of the quartz column by sharp-nose pliers, and putting the quartz tube into a No.3 alumina crucible; i, heating and cooling the No.3 alumina crucible in a box-type furnace; j, after cooling, the quartz tube is turned over and subjected to heat preservation; taking out the quartz tube, centrifuging, opening and cleaning to obtain a final product.
Owner:ZHEJIANG INSTITUTE OF OPTOELECTRONICS
Preparation method for reducing flux method gallium nitride interface redissolution and interface stress
The invention discloses a preparation method for reducing flux method gallium nitride interface redissolution and interface stress. The preparation method comprises the following steps: providing a gallium nitride seed crystal; carrying out low-doping growth on the gallium nitride seed crystal in the gallium-sodium melt at a first temperature and a first nitrogen pressure to form a low-doping layer; carrying out secondary growth on the gallium nitride seed crystal in the gallium-sodium melt at a second temperature and a second nitrogen pressure to form a regrowth layer; wherein the first temperature is lower than the second temperature, and the first nitrogen pressure is lower than the second nitrogen pressure. According to the method, in-situ growth is carried out through a two-step method, the low-temperature and low-pressure low-doped layer is constructed at first, then regrowth is carried out based on the low-doped layer, additional processing steps are reduced, the problem of interface redissolution in the growth process of the flux method gallium nitride can be effectively inhibited, interface inclusions and cavities are reduced, and meanwhile, due to introduction of the low-doped layer, the growth efficiency of the gallium nitride is improved. And the interface stress is reduced, so that the quality of the grown crystal is improved.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Intrinsic superlattice single crystal material and preparation method thereof
ActiveCN121931617AMaterial nanotechnologyPolycrystalline material growthCrystal structureSingle crystal growth
The invention discloses an intrinsic superlattice single crystal material and a preparation method thereof, and belongs to the technical field of single crystal growth. The chemical formula of the single crystal is BaLaMnSb4, and the crystal structure of the single crystal is formed by alternately stacking BaMnSb2 layers and LaSb2 layers in an intrinsic superlattice form in the direction perpendicular to the layers. The novel magnetic topological material BaLaMnSb4 single crystal with the intrinsic superlattice is grown by utilizing a self-fluxing agent method, the single crystal has an intrinsic superlattice structure formed by alternating BaMnSb2 and LaSb2, and the single crystal is high in quality, few in defect and large in size, and is an ideal research platform for the magnetic topological material.
Owner:HEFEI INSTITUTE OF PHYSICAL SCIENCE CHINESE ACADEMY OF SCIENCES