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Flux method for growth of gallium phosphate crystal

A technology of flux, gallium phosphate, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of unfavorable scale production, high equipment requirements, and it is difficult to minimize the water content in the crystal, and achieve the elimination of water. content, the effect of improving piezoelectric performance

Inactive Publication Date: 2006-04-26
SHANDONG UNIV
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Problems solved by technology

At the same time, hydrothermal growth requires high temperature and high pressure conditions, a large amount of precious metal lining is used, and high requirements are placed on equipment, which is not conducive to large-scale production
Due to the limitation of the growth method of hydrothermal method, it is difficult to minimize the water content in the crystal

Method used

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  • Flux method for growth of gallium phosphate crystal
  • Flux method for growth of gallium phosphate crystal

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Embodiment Construction

[0016] figure 1 The method of growing GaPO by the present invention is given 4 Schematic diagram of the device structure of the crystal. The device is a vertical resistance wire heating furnace. The seed rod 2 extends into the melt 8 and rotates under the drive of the rotating device 1. The furnace tube 4 is equipped with refractory bricks 3, and the resistance wire 5 is wound on the outer wall of the furnace tube 4. , its outer layer is thermal insulation material 6. The temperature control equipment is FP21 programmable automatic temperature controller, and the temperature control accuracy in the growth temperature area is 0.1%. The crystal incubator 7 is placed in the alumina crucible 9, which is a platinum crucible of 70×90 mm, which can withstand the working temperature below 1774° C., and the melt contained therein is not easy to corrode it. The thermocouple 10 adopts PtRh / Pt, which can effectively control the growth temperature.

[0017] Lithium carbonate-molybdenum...

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Abstract

The present invention is fluxing agent growth process of gallium phosphate crystal. Through using lithium carbonate and molybdenum oxide as flux, gallium oxide and ammonium dihydrogen phosphate as main material, mixing ammonium dihydrogen phosphate, gallium oxide, lithium carbonate and molybdenum oxide in the weight ratio of 1 to 1.23 to 1.12 to 6.57, setting the mixture in platinum crucible, heating to melt inside growth furnace and cooling to the temperature of 10-20 deg.c over the solution saturation point to obtain the mixed melt of gallium phosphate and the flux, introducing seed crystal into the growth furnace, lowering the temperature to 1-2 deg.c over the solution saturation point when the seed crystal begins to melt and rotating the seed crystal in 30 rpm for 24 hr, gallium phosphate crystal is grown. After lowering the temperature, the crystal is taken out of the solution. The process can eliminate water from the crystal and raise the piezoelectric performance of the crystal.

Description

(1) Technical field: [0001] The present invention relates to gallium phosphate (GaPO 4 ) crystal growth method. (two) background technology: [0002] Piezoelectric crystals have stable electromechanical properties and low transmission loss, and are important functional materials. The piezoelectric resonators, piezoelectric transducers and piezoelectric sensors prepared by it are widely used in communication, electroacoustic, underwater acoustic, ultrasonic, aviation, medical and other fields. At present, there are three main types of piezoelectric crystal materials that have been widely used in the information industry and formed industries: quartz (SiO 2 ), lithium niobate (LiNbO 3 ) and lithium tantalate (LiTaO 3 ). [0003] Quartz crystal has very good temperature stability and zero temperature coefficient tangential (ST cut), insoluble in other acid and alkali solutions except hydrofluoric acid. Quartz crystal is used in the field of piezoelectric materials for hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B9/12C30B29/14
Inventor 王继扬李静梁曦敏
Owner SHANDONG UNIV
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